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83 条记录 (耗时 0.032 秒)

    Electronic governor system and control device of the same
    3.
    发明授权
    Electronic governor system and control device of the same 有权
    电子调速器系统和控制装置相同

    公开(公告)号：US08733319B2

    公开(公告)日：2014-05-27

    申请号：US13064958

    申请日：2011-04-28

    申请人： Buso Takigawa ,  Umerujan Sawut ,  Tohti Gheyret ,  Norichika Kojima ,  Tsutomu Murakami

    发明人： Buso Takigawa ,  Umerujan Sawut ,  Tohti Gheyret ,  Norichika Kojima ,  Tsutomu Murakami

    IPC分类号： F02D41/00

    CPC分类号： F02D11/106 ,  F02D11/107 ,  F02D31/002

    摘要： When control to maintain a constant engine rotation number is executed, the electronic control unit constantly monitors an error of detected throttle position data with respect to a desired throttle control value, executes a first stage of a failure judgment method to judge that a failure of a throttle control system has occurred in a case where an absolute value of the error exceeds a predetermined threshold value continuously for a predetermined time or longer, and executes a second stage of the failure judgment method to judge that a serious failure has occurred in the system in a case where a detected engine rotation number exceeds a predetermined rotation number continuously for a predetermined time or longer, to perform predetermined operations in accordance with the judgment results.

    摘要翻译： 当执行维持恒定的发动机转速的控制时，电子控制单元根据期望的节气门控制值持续地监视检测到的节气门位置数据的误差，执行故障判断方法的第一阶段， 在错误的绝对值连续超过预定时间或更长时间的情况下已经发生节气门控制系统，并且执行故障判断方法的第二阶段，以判断系统中发生严重故障 检测到的发动机转速连续超过预定转数的预定时间或更长时间的情况下，根据判断结果进行规定的动作。

    Electrolytic etching method and apparatus
    4.
    发明授权
    Electrolytic etching method and apparatus 失效
    电解蚀刻方法和装置

    公开(公告)号：US07691241B2

    公开(公告)日：2010-04-06

    申请号：US10998617

    申请日：2004-11-30

    申请人： Tsutomu Murakami ,  Koji Tsuzuki

    发明人： Tsutomu Murakami ,  Koji Tsuzuki

    IPC分类号： C25F3/14 ,  C25F7/00

    CPC分类号： B23H3/00 ,  B23H3/04 ,  C25F3/14 ,  C25F7/00 ,  H01L31/18

    摘要： The present invention relates to a method and apparatus for partial etching or pattern etching using an electrolysis reaction, wherein, conventionally, there was the problem that an etching line could not be finely formed on a cell edge because of apparatus problems concerning alignment accuracy. The present invention provides a method and apparatus with which fine line etching is possible and which can form a line on a cell edge.Provided is a an electrolytic etching method of a substrate which is formed having a subject etching layer on a surface, having the steps of providing a fixed gap from a substrate end surface which is external to an end surface of the substrate for placing a working part of a working electrode and passing current between the substrate and the working electrode.

    摘要翻译： 本发明涉及一种使用电解反应进行局部蚀刻或图案蚀刻的方法和装置，其中传统上存在由于关于对准精度的装置问题而在细胞边缘上不能精细地形成蚀刻线的问题。 本发明提供了可以进行细线蚀刻并且可以在单元边缘上形成线的方法和装置。 本发明提供一种基板的电解蚀刻方法，该方法形成在表面上具有被摄体蚀刻层，具有从基板端面提供固定间隙的步骤，该基板端面位于基板的端面外部，用于放置工作部分 的工作电极，并在基板和工作电极之间通过电流。

    Throttle apparatus having electronic control means built-in
    5.
    发明申请
    Throttle apparatus having electronic control means built-in 审中-公开
    具有内置电子控制装置的节气门装置

    公开(公告)号：US20080276908A1

    公开(公告)日：2008-11-13

    申请号：US12000367

    申请日：2007-12-12

    申请人： Tsutomu Murakami

    发明人： Tsutomu Murakami

    IPC分类号： F02D41/00

    CPC分类号： F02D11/10 ,  F02D35/0053 ,  F02D2200/0406 ,  F02D2200/0414 ,  F02D2400/06

    摘要： The present invention provides a throttle apparatus having an electronic control means built-in which uses an engine fuel supply system having a carburetor specification and is arranged for constructing a fuel injection system in accordance with an electronic control.

    摘要翻译： 本发明提供一种节气门装置，其具有内置的电子控制装置，其使用具有化油器规格的发动机燃料供应系统，并且被布置用于根据电子控制构造燃料喷射系统。

    Fuel supply control method and apparatus of internal combustion engine
    6.
    发明授权
    Fuel supply control method and apparatus of internal combustion engine 失效
    燃油供应控制方法和内燃机装置

    公开(公告)号：US07287514B2

    公开(公告)日：2007-10-30

    申请号：US11305194

    申请日：2005-12-19

    申请人： Masao Kakinuma ,  Tsutomu Murakami

    发明人： Masao Kakinuma ,  Tsutomu Murakami

    IPC分类号： F02M51/00 ,  F02D41/10 ,  F02M69/28

    CPC分类号： F02D41/107

    摘要： The invention provides a fuel supply control method and apparatus in which an air fuel ratio does not become rich even if an acceleration and deceleration operation is repeated for a short time in the case that a time lag with respect to a response from a detection of an acceleration state to a fuel amount increase is large, and troubles such as a black smoke generation from an exhaust pipe, an engine stop and the like are not generated. In a fuel supply control method of an internal combustion chamber for increasing an amount of a fuel for acceleration so as to inject from an injection apparatus, at a time of detecting a transient state at an accelerating time or the like on the basis of data such as an opening degree of a throttle valve and/or an air suction pressure, the method inhibits the fuel amount increase for acceleration on the basis of the detection of the transient state, if a total amount of an injection fuel per a unit time is more than a fixed value.

    摘要翻译： 本发明提供一种燃料供给控制方法和装置，其中即使在相对于来自检测到的检测的响应的时间滞后的情况下，即使在短时间内重复加减速操作，空燃比也不变浓 燃料量增加的加速状态大，并且不产生诸如从排气管，发动机停止等产生的黑烟等问题。 在用于增加用于加速的燃料量以便从注射装置注入的内燃机的燃料供应控制方法中，在基于加速时间等检测瞬态的时候， 作为节流阀的开度和/或空气吸入压力，如果每单位时间的喷射燃料的总量多，则该方法基于过渡状态的检测来抑制加速燃料量的增加 比固定值。

    Semiconductor element and method and apparatus for fabricating the same
    8.
    发明授权
    Semiconductor element and method and apparatus for fabricating the same 失效
    半导体元件及其制造方法和装置

    公开(公告)号：US6132585A

    公开(公告)日：2000-10-17

    申请号：US749727

    申请日：1996-11-15

    申请人： Takafumi Midorikawa ,  Tsutomu Murakami ,  Takahiro Mori ,  Hirofumi Ichinose

    发明人： Takafumi Midorikawa ,  Tsutomu Murakami ,  Takahiro Mori ,  Hirofumi Ichinose

    IPC分类号： H01L31/04 ,  H01L31/20 ,  C25D5/02

    CPC分类号： H01L31/208 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

    摘要： The present invention aims to provide a highly reliable semiconductor element with high performance, and a fabrication method for such highly reliable semiconductor with excellent mass producibility. The photovoltaic elements comprise an electric conductor, semiconductor regions and a transparent conductor layer, which are sequentially formed on a substrate. The shunt resistance in the semiconductor element is rendered in the range from 1.times.10.sup.3 .OMEGA.cm.sup.2 to 1.times.10.sup.6 .OMEGA.cm.sup.2 by performing a forming treatment and a short circuit passivation treatment after forming the transparent conductor layer, and then selectively covering with insulation the defective portions with a cationic or anionic electrodeposited resin, or performing a forming treatment, after forming the semiconductor layers, then selectively covering with insulation the defective portions with a cationic or anionic electrodeposited resin, and then forming the transparent conductor layer.

    摘要翻译： 本发明旨在提供一种具有高性能的高可靠性半导体元件，以及具有优异的大规模生产能力的这种高可靠性半导体的制造方法。 光电元件包括​​依次形成在基板上的电导体，半导体区域和透明导体层。 通过在形成透明导体层之后进行成形处理和短路钝化处理，半导体元件中的分流电阻在1×10 3欧姆·cm2至1×10 6欧姆·平方厘米的范围内，然后用阳离子选择性地覆盖缺陷部分 或阴离子电沉积树脂，或者在形成半导体层之后进行成形处理，然后用阳离子或阴离子电沉积树脂绝缘地选择性地覆盖缺陷部分，然后形成透明导体层。

    Pin junction photovoltaic device having an i-type a-SiGe semiconductor layer with a maximal point for the Ge content
    10.
    发明授权
    Pin junction photovoltaic device having an i-type a-SiGe semiconductor layer with a maximal point for the Ge content 失效
    具有具有Ge含量最大点的i型a-SiGe半导体层的pin结光电器件

    公开(公告)号：US5324364A

    公开(公告)日：1994-06-28

    申请号：US45176

    申请日：1993-04-13

    申请人： Koichi Matsuda ,  Masafumi Sano ,  Tsutomu Murakami

    发明人： Koichi Matsuda ,  Masafumi Sano ,  Tsutomu Murakami

    IPC分类号： H01L31/04 ,  H01L31/0376 ,  H01L31/075

    CPC分类号： H01L31/076 ,  H01L31/03765 ,  H01L31/065 ,  H01L31/075 ,  Y02E10/548

    摘要： A pin junction photovoltaic device comprising a substrate and a pin junction semiconductor active layer region disposed on said substrate, said pin junction semiconductor active layer region comprising a p-type semiconductor layer composed of a p-type non-single crystalline semiconductor material, an i-type semiconductor layer composed of an i-type non-single crystalline semiconductor material, and an n-type semiconductor layer composed of an n-type non-single crystalline semiconductor material, characterized in that (a) a buffer layer comprising a non-single crystalline silicon semiconductor material substantially free of germanium atoms is interposed between said p-type semiconductor layer and said i-type semiconductor layer, (b) a buffer layer comprising a non-single crystalline silicon semiconductor material substantially free of germanium atoms is interposed between said i-type semiconductor layer and said n-type semiconductor layer, and said i-type semiconductor layer is formed of an amorphous silicon germanium semiconductor material containing the germanium atoms in an amount of 20 to 70 atomic % in the entire region in which the concentration distribution of the germanium atoms in the thickness direction is varied while providing a maximum concentration point.

    摘要翻译： 一种pin结光电器件，包括衬底和设置在所述衬底上的pin结半导体有源层区域，所述pin结半导体有源层区域包括由p型非单晶半导体材料构成的p型半导体层，i 由n型非单晶半导体材料构成的n型半导体层以及由n型非单晶半导体材料构成的n型半导体层，其特征在于，（a） 基本上不含锗原子的单晶硅半导体材料介于所述p型半导体层和所述i型半导体层之间，（b）包含基本上不含锗原子的非单晶硅半导体材料的缓冲层介于 所述i型半导体层和所述n型半导体层，并且所述i型半导体层形成为o f是在锗原子在厚度方向上的浓度分布同时提供最大浓度点的整个区域中含有锗原子的含量为20至70原子％的非晶硅锗半导体材料。