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1.发明申请HIGH-THROUGHPUT BATCH POROUS SILICON MANUFACTURING EQUIPMENT DESIGN AND PROCESSING METHODS 有权高通量批量多孔硅制造设备设计与加工方法公开(公告)号：US20130180847A1
公开(公告)日：2013-07-18
申请号：US13244466
申请日：2011-09-24
申请人： Takao Yonehara , Subramanian Tamilmani , Karl-Josef Kramer , Jay Ashjaee , Mehrdad M. Moslehi , Yasuyoshi Miyaji , Noriyuki Hayashi , Takamitsu Inahara
发明人： Takao Yonehara , Subramanian Tamilmani , Karl-Josef Kramer , Jay Ashjaee , Mehrdad M. Moslehi , Yasuyoshi Miyaji , Noriyuki Hayashi , Takamitsu Inahara
IPC分类号： H01L21/02
CPC分类号： C25D11/005 , C25D11/32 , C25F3/12 , C25F7/02 , H01L21/0203 , H01L21/67086 , H01L21/67781 , H01L21/68721 , H01L21/68771 , H01L21/68785 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译： 本公开使得可以高产率地制造多孔半导体层（由诸如多孔硅的单层或多层多孔半导体制成，包括单孔隙率或多孔隙率层）。 一些应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率的多孔硅形成及其随后的氧化）。 此外，本公开适用于光伏技术的MEMS领域，包括传感器和执行器，独立的或与集成半导体微电子，半导体微电子芯片和光电子集成。
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2.发明授权High-Throughput batch porous silicon manufacturing equipment design and processing methods 有权高产量批量多孔硅制造设备的设计和加工方法公开(公告)号：US09076642B2
公开(公告)日：2015-07-07
申请号：US13244466
申请日：2011-09-24
申请人： Takao Yonehara , Subramanian Tamilmani , Karl-Josef Kramer , Jay Ashjaee , Mehrdad M. Moslehi , Yasuyoshi Miyaji , Noriyuki Hayashi , Takamitsu Inahara
发明人： Takao Yonehara , Subramanian Tamilmani , Karl-Josef Kramer , Jay Ashjaee , Mehrdad M. Moslehi , Yasuyoshi Miyaji , Noriyuki Hayashi , Takamitsu Inahara
CPC分类号： C25D11/005 , C25D11/32 , C25F3/12 , C25F7/02 , H01L21/0203 , H01L21/67086 , H01L21/67781 , H01L21/68721 , H01L21/68771 , H01L21/68785 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译： 本公开使得可以高产率地制造多孔半导体层（由诸如多孔硅的单层或多层多孔半导体制成，包括单孔隙率或多孔隙率层）。 一些应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率的多孔硅形成及其随后的氧化）。 此外，本公开适用于光伏技术的MEMS领域，包括传感器和执行器，独立的或与集成半导体微电子，半导体微电子芯片和光电子集成。
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公开(公告)号：US08992746B2
公开(公告)日：2015-03-31
申请号：US13310083
申请日：2011-12-02
申请人： Yasuyoshi Miyaji , Noriyuki Hayashi , Takamitsu Inahara , Takao Yonehara , Karl-Josef Kramer , Subramanian Tamilmani
发明人： Yasuyoshi Miyaji , Noriyuki Hayashi , Takamitsu Inahara , Takao Yonehara , Karl-Josef Kramer , Subramanian Tamilmani
CPC分类号： C25D11/005 , C25D17/002 , C25D17/005 , C25D17/02 , Y10S414/135 , Y10S414/136 , Y10S414/137 , Y10S414/138 , Y10S414/139 , Y10S414/14 , Y10S414/141
摘要： An apparatus for anodizing substrates immersed in an electrolyte solution. A substrate holder mounted in a storage tank includes a first support unit having first support elements for supporting, in a liquid-tight condition, only lower circumferential portions of the substrates, and a second support unit attachable to and detachable from the first support unit and having second support elements for supporting, in a liquid-tight condition, remaining circumferential portions of the substrates. A drive mechanism separates the first support unit and the second support unit when loading and unloading the substrates, and for connecting the first support unit and the second support unit after the substrates are placed in the substrate holder.
摘要翻译： 用于阳极氧化沉积在电解质溶液中的基底的装置。 安装在储罐中的基板支架包括第一支撑单元，该第一支撑单元具有第一支撑元件，该第一支撑元件用于在液密状态下仅支撑基板的下周边部分;以及第二支撑单元，其可附接到第一支撑单元并且可从第一支撑单元拆卸; 具有用于在液密条件下支撑基板的剩余周向部分的第二支撑元件。 驱动机构在装载和卸载基板时分离第一支撑单元和第二支撑单元，并且在将基板放置在基板支架中之后连接第一支撑单元和第二支撑单元。
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4.发明申请APPARATUS AND METHODS FOR UNIFORMLY FORMING POROUS SEMICONDUCTOR ON A SUBSTRATE 有权在基板上均匀形成多孔半导体的装置和方法公开(公告)号：US20120145553A1
公开(公告)日：2012-06-14
申请号：US13288721
申请日：2011-11-03
申请人： Karl-Josef Kramer , Mehrdad M. Moslehi , Subramanian Tamilmani , George D. Kamian , Jay Ashjaee , Takao Yonehara
发明人： Karl-Josef Kramer , Mehrdad M. Moslehi , Subramanian Tamilmani , George D. Kamian , Jay Ashjaee , Takao Yonehara
CPC分类号： C25D11/005 , C25D7/12 , C25D11/022 , C25D11/024 , C25D11/32 , C25D17/001 , C25D17/008 , C25D17/08 , C25D21/04 , C25F7/00
摘要： This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译： 本公开使得能够高生产率控制制造均匀的多孔半导体层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙或多孔层）制成）。 一些应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率的多孔硅形成及其随后的氧化）。 此外，本公开适用于光伏技术的MEMS领域，包括传感器和执行器，独立的或与集成半导体微电子，半导体微电子芯片和光电子集成。
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5.发明授权Apparatus and methods for uniformly forming porous semiconductor on a substrate 有权在基板上均匀地形成多孔半导体的装置和方法公开(公告)号：US08906218B2
公开(公告)日：2014-12-09
申请号：US13288721
申请日：2011-11-03
申请人： Karl-Josef Kramer , Mehrdad M. Moslehi , Subramanian Tamilmani , George Kamian , Jay Ashjaee , Takao Yonehara
发明人： Karl-Josef Kramer , Mehrdad M. Moslehi , Subramanian Tamilmani , George Kamian , Jay Ashjaee , Takao Yonehara
CPC分类号： C25D11/005 , C25D7/12 , C25D11/022 , C25D11/024 , C25D11/32 , C25D17/001 , C25D17/008 , C25D17/08 , C25D21/04 , C25F7/00
摘要： This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译： 本公开使得能够高生产率控制制造均匀的多孔半导体层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙或多孔层）制成）。 一些应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率的多孔硅形成及其随后的氧化）。 此外，本公开适用于光伏技术的MEMS领域，包括传感器和执行器，独立的或与集成半导体微电子，半导体微电子芯片和光电子集成。
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6.发明申请APPARATUS AND METHOD FOR REPEATEDLY FABRICATING THIN FILM SEMICONDUCTOR SUBSTRATES USING A TEMPLATE 审中-公开使用模板重新制造薄膜半导体衬底的装置和方法公开(公告)号：US20120125256A1
公开(公告)日：2012-05-24
申请号：US13209390
申请日：2011-08-13
申请人： Karl-Josef Kramer , Mehrdad M. Moslehi , David Xuan-Qi Wang , Subramanian Tamilmani , Sam Tone Tor , Rahim Kavari , Rafael Ricolcol , George Kamian , Joseph Leigh
发明人： Karl-Josef Kramer , Mehrdad M. Moslehi , David Xuan-Qi Wang , Subramanian Tamilmani , Sam Tone Tor , Rahim Kavari , Rafael Ricolcol , George Kamian , Joseph Leigh
IPC分类号： C30B25/02
CPC分类号： H01L31/1892 , H01L31/02363 , H01L31/035281 , H01L31/0392 , Y02E10/50
摘要： Mechanisms are disclosed by which a semiconductor wafer, silicon in some embodiments, is repeatedly used to serve as a template and carrier for fabricating high efficiency capable thin semiconductor solar cells substrates. Mechanisms that enable such repeated use of these templates at consistent quality and with high yield are disclosed.
摘要翻译： 公开了一些机构，其中一些实施例中的半导体晶片，硅被重复地用作用于制造高效率的薄半导体太阳能电池基板的模板和载体。 公开了能够以一致的质量和高产率重复使用这些模板的机制。
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公开(公告)号：US20110120882A1
公开(公告)日：2011-05-26
申请号：US12688495
申请日：2010-01-15
申请人： Doug Crafts , Mehrdad Moslehi , Subramanian Tamilmani , Joe Kramer , George D. Kamian , Somnath Nag
发明人： Doug Crafts , Mehrdad Moslehi , Subramanian Tamilmani , Joe Kramer , George D. Kamian , Somnath Nag
IPC分类号： H01L31/18
CPC分类号： C25F3/12 , C25D11/32 , C25F7/00 , H01L21/67005 , H01L21/67075 , H01L21/67086 , H01L21/6776 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： It is an object of this disclosure to provide high productivity, low cost-of-ownership manufacturing equipment for the high volume production of photovoltaic (PV) solar cell device architecture. It is a further object of this disclosure to reduce material processing steps and material cost compared to existing technologies by using gas-phase source silicon. The present disclosure teaches the fabrication of a sacrificial substrate base layer that is compatible with a gas-phase substrate growth process. Porous silicon is used as the sacrificial layer in the present disclosure. Further, the present disclosure provides equipment to produce a sacrificial porous silicon PV cell-substrate base layer.
摘要翻译： 本发明的一个目的是提供高生产率，低成本的制造设备用于大量生产光伏（PV）太阳能电池器件结构。 本公开的另一个目的是通过使用气相源硅与现有技术相比减少材料加工步骤和材料成本。 本公开教导了制造与气相衬底生长工艺相容的牺牲衬底基底层。 在本公开中使用多孔硅作为牺牲层。 此外，本公开提供了制造牺牲多孔硅PV电池 - 衬底基底层的设备。
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公开(公告)号：US08926803B2
公开(公告)日：2015-01-06
申请号：US12688495
申请日：2010-01-15
申请人： Doug Crafts , Mehrdad Moslehi , Subramanian Tamilmani , Joe Kramer , George D. Kamian , Somnath Nag
发明人： Doug Crafts , Mehrdad Moslehi , Subramanian Tamilmani , Joe Kramer , George D. Kamian , Somnath Nag
IPC分类号： C25D17/00 , H01L31/18 , H01L21/67 , H01L21/677
CPC分类号： C25F3/12 , C25D11/32 , C25F7/00 , H01L21/67005 , H01L21/67075 , H01L21/67086 , H01L21/6776 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： It is an object of this disclosure to provide high productivity, low cost-of-ownership manufacturing equipment for the high volume production of photovoltaic (PV) solar cell device architecture. It is a further object of this disclosure to reduce material processing steps and material cost compared to existing technologies by using gas-phase source silicon. The present disclosure teaches the fabrication of a sacrificial substrate base layer that is compatible with a gas-phase substrate growth process. Porous silicon is used as the sacrificial layer in the present disclosure. Further, the present disclosure provides equipment to produce a sacrificial porous silicon PV cell-substrate base layer.
摘要翻译： 本发明的一个目的是提供高生产率，低成本的制造设备用于大量生产光伏（PV）太阳能电池器件结构。 本公开的另一个目的是通过使用气相源硅与现有技术相比减少材料加工步骤和材料成本。 本公开教导了制造与气相衬底生长工艺相容的牺牲衬底基底层。 在本公开中使用多孔硅作为牺牲层。 此外，本公开提供了制造牺牲多孔硅PV电池 - 衬底基底层的设备。
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