摘要:
A semiconductor device is provided which comprises a memory mat formed by dividing a memory into a plurality of blocks and a circuit arrangement disposed at every memory mat block for generating access suppression signals at least for defective memory cells within that block. Using this arrangement, the access speed to a redundant memory cell array for relieving the defects is increased so that a semiconductor memory device capable of a high speed operation is obtained.
摘要:
In a semiconductor integrated circuit device, input protective elements have current limiting resistors which are diffused resistors of a second conductivity type formed in a first semiconductor region of a first conductivity type isolated electrically by a second semiconductor region of the second conductivity type, with the first conductivity type semiconductor region being in a floating state electrically. The input protective elements create less leak current and have high electrostatic durability.