公开(公告)号：US4645119A

公开(公告)日：1987-02-24

申请号：US627892

申请日：1984-07-05

申请人： Takashi Haramaki ,  Katsuhiko Shiota ,  Satoshi Kokura ,  Takao Funamoto ,  Akira Tomita

发明人： Takashi Haramaki ,  Katsuhiko Shiota ,  Satoshi Kokura ,  Takao Funamoto ,  Akira Tomita

IPC分类号： F28F19/06 ,  B23K1/00 ,  B23K35/28 ,  B23K35/34 ,  B23K35/36 ,  B23K35/363 ,  F28D1/047 ,  F28F1/32 ,  F28F19/02 ,  F28F21/08

CPC分类号： F28F21/089 ,  B23K1/0012 ,  B23K35/34 ,  B23K35/3605 ,  F28D1/0478 ,  F28F1/32 ,  F28F21/084

摘要： A heat exchanger and a method of manufacturing a heat exchanger by brazing metal members mainly made of Al or Al alloy is disclosed. The heat exchanger has a plurality of brazed metal members, at least one of the brazed metal members being made of brazing sheet clad with a brazing material. The brazed portions of the metal members or the whole surface of the heat exchanger are coated with a corrosion-resistant fluoride flux consisting essentially of 25-40% KF, 38-54% AlF3 and 3-30% ZnF2 by weight which forms a corrosion-inhibiting metallic film.

摘要翻译： 公开了一种热交换器和通过钎焊主要由Al或Al合金制成的金属构件的热交换器的方法。 热交换器具有多个钎焊金属构件，钎焊金属构件中的至少一个由钎焊材料包覆的钎焊板制成。 金属部件的钎焊部分或热交换器的整个表面涂覆有基本上由25-40％KF，38-54％AlF 3和3-30％ZnF 2重量组成的耐腐蚀氟化物焊剂，其形成腐蚀 抑制金属膜。

公开(公告)号：US5051812A

公开(公告)日：1991-09-24

申请号：US551852

申请日：1990-07-12

申请人： Jin Onuki ,  Masayasu Nihei ,  Yasushi Koubuchi ,  Motoo Suwa ,  Shinichi Fukada ,  Katsuhiko Shiota ,  Kunio Miyazaki ,  Tatsuo Itagaki ,  Jun Sugiura

发明人： Jin Onuki ,  Masayasu Nihei ,  Yasushi Koubuchi ,  Motoo Suwa ,  Shinichi Fukada ,  Katsuhiko Shiota ,  Kunio Miyazaki ,  Tatsuo Itagaki ,  Jun Sugiura

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L23/5226 ,  H01L23/53219 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265

摘要： A semiconductor device having a high reliability wiring conductor structure applicable to DRAMs and SRAMs.The semiconductor device of the present invention is characterized by comprising a first wiring conductor film wherein a specific resistance is 5.about.15.mu..OMEGA.cm and an allowable current density is 1.times.10.sup.6 .about.1.times.10.sup.8 A/cm.sup.2 ; a second wiring conductor film having a laminated layer structure formed of a layer of high fusing point and low resistance material and a layer of an Al based alloy; and a plug composed of a high fusing point and low resistance material, electrically connecting to the first wiring conductor film and the second wiring conductor film. Thus, a semiconductor device showing almost no increase in electrical resistance in a wiring conductor film due to electromigration even after subjecting to a large current is provided.

摘要翻译： 具有可应用于DRAM和SRAM的高可靠性布线导体结构的半导体器件。 本发明的半导体器件的特征在于包括第一布线导体膜，其中电阻率为5微米，欧姆厘米，容许电流密度为1×10 6差1×10 8 A / cm 2; 第二布线导体膜，具有由高熔点层和低电阻材料层以及Al基合金层形成的叠层结构; 以及由高熔点和低电阻材料组成的插头，电连接到第一布线导体膜和第二布线导体膜。 因此，提供了即使在经受大电流之后也由于电迁移而几乎不显示布线导体膜中的电阻增加的半导体器件。

公开(公告)号：US06329099B1

公开(公告)日：2001-12-11

申请号：US09270678

申请日：1999-03-16

申请人： Tetsuo Oyama ,  Tadahiko Miyoshi ,  Manabu Madokoro ,  Hisamitsu Hatoh ,  Shigeoki Nishimura ,  Katsuhiko Shiota ,  Kiyoshi Otaka

发明人： Tetsuo Oyama ,  Tadahiko Miyoshi ,  Manabu Madokoro ,  Hisamitsu Hatoh ,  Shigeoki Nishimura ,  Katsuhiko Shiota ,  Kiyoshi Otaka

IPC分类号： H01M1039

CPC分类号： H01M10/3909 ,  C22C19/058 ,  C22C19/07 ,  H01M2/0252 ,  H01M2/0265 ,  H01M10/3972

摘要： A highly reliable sodium-sulfur battery includes a cell container for the positive electrode which is hardly deteriorated by corrosion. The cell container for the positive electrode is assembled by integrating plural members made of a high corrosion resistant alloy containing Cr, or a Co base alloy containing Cr, Ni and Mo, wherein carbide containing at least one of Cr, W and Mo is precipitated, and a readily deformable portion is provided to the cell container for the positive electrode, whereby reliability of the sodium-sulfur battery can be significantly improved.

摘要翻译： 高可靠性的钠硫电池包括用于正极的电池容器，其几乎不被腐蚀而劣化。 用于正极的电池容器通过集成由含有Cr的高耐腐蚀合金制成的多个构件或含有Cr，Ni和Mo的Co基合金而组装，其中包含Cr，W和Mo中的至少一种的碳化物沉淀， 并且容易变形的部分被提供到用于正电极的电池容器，由此可以显着地提高钠硫电池的可靠性。

公开(公告)号：US5962160A

公开(公告)日：1999-10-05

申请号：US680851

申请日：1996-07-16

申请人： Tetsuo Oyama ,  Tadahiko Miyoshi ,  Manabu Madokoro ,  Hisamitsu Hatoh ,  Shigeoki Nishimura ,  Katsuhiko Shiota ,  Kiyoshi Otaka

发明人： Tetsuo Oyama ,  Tadahiko Miyoshi ,  Manabu Madokoro ,  Hisamitsu Hatoh ,  Shigeoki Nishimura ,  Katsuhiko Shiota ,  Kiyoshi Otaka

IPC分类号： C22C19/05 ,  C22C19/07 ,  H01M2/02 ,  H01M10/39

CPC分类号： H01M10/3909 ,  C22C19/058 ,  C22C19/07 ,  H01M2/0252 ,  H01M2/0265 ,  H01M10/3972

摘要： A highly reliable sodium-sulfur battery includes a cell container for the positive electrode which is hardly deteriorated by corrosion. The cell container for the positive electrode is made of a Co base alloy containing Cr, Ni, and Mo, wherein carbide containing at least one of Cr, W, and Mo is precipitated, or the cell container for positive electrode is assembled by integrating plural members made of a high corrosion resistance alloy containing Cr by welding, and a readily deformable portion is provided to the cell container for positive electrode, whereby the reliability of the sodium-sulfur battery can be significantly improved.

摘要翻译： 高可靠性的钠硫电池包括用于正极的电池容器，其几乎不被腐蚀而劣化。 用于正极的电池容器由含有Cr，Ni和Mo的Co基合金制成，其中包含Cr，W和Mo中的至少一种的碳化物沉淀，或者通过积分多个组合来组装正极电池容器 通过焊接由含有Cr的高耐腐蚀性合金制成的构件，并且容易变形的部分被提供给用于正极的电池容器，由此可以显着提高钠硫电池的可靠性。