公开(公告)号：US20090213667A1

公开(公告)日：2009-08-27

申请号：US12437021

申请日：2009-05-07

申请人： Takashi KUBO ,  Takashi ITOH ,  Yasuhiro KASHIWAZAKI ,  Taku OGURA ,  Kiyohiro FURUTANI

发明人： Takashi KUBO ,  Takashi ITOH ,  Yasuhiro KASHIWAZAKI ,  Taku OGURA ,  Kiyohiro FURUTANI

IPC分类号： G11C7/00 ,  G11C5/14

CPC分类号： G11C11/5642 ,  G11C5/145 ,  G11C7/06 ,  G11C7/12 ,  G11C16/24 ,  G11C16/26 ,  G11C16/30 ,  G11C2207/065 ,  G11C2207/2227 ,  G11C2211/5634 ,  G11C2211/5645

摘要： An internal voltage generating circuit generates and supplies a boosted voltage higher than an internal power supply voltage, as an operating power supply voltage, to a sense amplifier in a read circuit for reading data of a memory cell. A bit line precharge current supplied via an internal data line is produced from the internal power supply voltage. It is possible to provide a nonvolatile semiconductor memory device, which can perform a precise sense operation and an accurate reading of data even under a low power supply voltage condition.

摘要翻译： 内部电压产生电路产生并提供高于作为工作电源电压的内部电源电压的升压电压到用于读取存储器单元的数据的读取电路中的读出放大器。 从内部电源电压产生经由内部数据线提供的位线预充电电流。 可以提供一种非易失性半导体存储器件，即使在低电源电压条件下也能进行精确的读出操作和数据的精确读取。

公开(公告)号：US20120275256A1

公开(公告)日：2012-11-01

申请号：US13455668

申请日：2012-04-25

申请人： Kiyohiro FURUTANI ,  Takuya KADOWAKI

发明人： Kiyohiro FURUTANI ,  Takuya KADOWAKI

IPC分类号： G11C7/06

CPC分类号： G11C7/08 ,  G11C7/222 ,  G11C11/40618 ,  G11C11/4074 ,  G11C11/4076 ,  G11C11/4091

摘要： A device may include, but is not limited to, a bit line; a power line supplied with a power voltage; a sense amplifier circuit amplifying a voltage of the bit line by using the power voltage of the power line; and a control circuit configured to respond to an active command and supply, as the power voltage, the power line with a first voltage during a first period and a second voltage lower than the first voltage during a second period. The control circuit is further configured to respond to a refresh command and supply, as the power voltage, the power line with the second voltage during both the first and second periods.

摘要翻译： 设备可以包括但不限于位线; 提供电源电压的电力线; 读出放大器电路，通过使用电力线的电源电压来放大位线的电压; 以及控制电路，被配置为响应于有效命令，并且在第一时段期间以第一电压提供电力线，并在第二时段期间提供低于第一电压的第二电压。 控制电路还被配置为响应刷新命令并在第一和第二周期期间提供具有第二电压的电力线作为电源电压。

公开(公告)号：US20100253317A1

公开(公告)日：2010-10-07

申请号：US12753582

申请日：2010-04-02

申请人： Shinya OKUNO ,  Kiyohiro FURUTANI

发明人： Shinya OKUNO ,  Kiyohiro FURUTANI

IPC分类号： G05F3/16 ,  H01L27/06

CPC分类号： G11C8/10 ,  G11C5/144 ,  G11C5/145

摘要： To include a first X decoder constituted by a transistor whose off-leakage current has a first temperature characteristic, a pre-decoder circuit and a peripheral circuit constituted by a transistor whose off-leakage current has a second temperature characteristic, a power supply control circuit that inactivates the X decoder when a temperature exceeds a first threshold during a standby state, and a power supply control circuit that inactivates the pre-decoder and the peripheral circuit when a temperature exceeds a second threshold during the standby state. According to the present invention, whether power supply control is performed on a plurality of circuit blocks is determined based on different temperatures, therefore optimum power supply control can be performed on each of circuit blocks.

摘要翻译： 为了包括由漏电流具有第一温度特性的晶体管构成的第一X解码器，由解除漏电流具有第二温度特性的晶体管构成的预解码器电路和外围电路，电源控制电路 在待机状态期间当温度超过第一阈值时使X解码器失活;以及电源控制电路，其在待机状态期间当温度超过第二阈值时使预解码器和外围电路失活。 根据本发明，基于不同的温度来确定是否对多个电路块执行电源控制，因此可以对每个电路块执行最佳的电源控制。

公开(公告)号：US20100195412A1

公开(公告)日：2010-08-05

申请号：US12697728

申请日：2010-02-01

申请人： Kiyohiro FURUTANI ,  Seiji NARUI

发明人： Kiyohiro FURUTANI ,  Seiji NARUI

IPC分类号： G11C7/10 ,  G11C7/00 ,  G11C8/00 ,  G11C7/04

CPC分类号： G11C11/40626 ,  G11C8/06 ,  G11C8/12 ,  G11C8/18 ,  G11C11/406 ,  G11C11/40615 ,  G11C2211/4061 ,  G11C2211/4067

摘要： The semiconductor device includes a temperature sensor controlled so that temperature measurement is made once at each of a plurality of different reference temperatures at an interval of a preset number of times of refresh operations and a plurality of latch circuits holding the results of temperature measurement. A refresh period is set from outputs of the latch circuits inclusive of the result of temperature measurement carried out last time for each of a plurality of different reference temperatures. After start of measurement, temperature measurements are repeated every wait time corresponding to circulation of the refresh operations. The refresh period is set such that the high-temperature side results of temperature measurement are prioritized(FIG. 2).

摘要翻译： 该半导体装置包括温度传感器，该温度传感器被控制成使得以预定次数的刷新操作的间隔和保持温度测量结果的多个锁存电路在多个不同参考温度中的每一个进行一次温度测量。 包括针对多个不同参考温度中的每一个的上次执行的温度测量结果的锁存电路的输出设置刷新周期。 在测量开始之后，对应于刷新操作的循环的每个等待时间重复温度测量。 刷新周期被设定为使得温度测量的高温侧结果被优先化（图2）。

公开(公告)号：US20090238022A1

公开(公告)日：2009-09-24

申请号：US12410045

申请日：2009-03-24

申请人： Kiyohiro FURUTANI

发明人： Kiyohiro FURUTANI

IPC分类号： G11C17/16 ,  G11C7/00

CPC分类号： G11C17/18 ,  G11C29/02 ,  G11C29/021 ,  G11C29/028 ,  G11C2207/2254

摘要： A semiconductor device includes: a setting circuit which sets a first setting value; a control circuit which receives a predetermined control signal and the first setting value so as to output a second setting value; and an output circuit which outputs a predetermined level in response to the first setting value or the second setting value, wherein the second setting value is changed from the first setting value based on the predetermined control signal.

摘要翻译： 一种半导体器件，包括：设定电路，其设定第一设定值; 控制电路，其接收预定的控制信号和所述第一设定值，以输出第二设定值; 以及输出电路，其响应于所述第一设定值或所述第二设定值输出预定电平，其中，所述第二设定值基于所述规定的控制信号从所述第一设定值变化。