公开(公告)号：US07859054B2

公开(公告)日：2010-12-28

申请号：US11561572

申请日：2006-11-20

申请人： Huaxiang Yin ,  Takashi Noguchi ,  Hyuk Lim ,  Wenxu Xianyu ,  Hans S. Cho

发明人： Huaxiang Yin ,  Takashi Noguchi ,  Hyuk Lim ,  Wenxu Xianyu ,  Hans S. Cho

IPC分类号： H01L21/84 ,  H01L27/12

CPC分类号： H01L27/12 ,  H01L29/78609 ,  H01L29/78696

摘要： A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and the drain disposed at either side of the channel respectively.

摘要翻译： 薄膜晶体管包括具有非线性电子移动路径的Si基通道，设置在沟道两侧的源极和漏极，设置在沟道上方的栅极，介于通道和栅极之间的绝缘体，以及 支撑通道的基板，分别设置在通道的两侧的源极和漏极。

公开(公告)号：US20100200834A1

公开(公告)日：2010-08-12

申请号：US12659776

申请日：2010-03-22

申请人： Hans S. Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-Young Kim ,  Huaxiang Yin ,  Xiaoxin Zhang

发明人： Hans S. Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-Young Kim ,  Huaxiang Yin ,  Xiaoxin Zhang

IPC分类号： H01L29/775 ,  H01L29/04 ,  H01L29/02 ,  H01L27/12

CPC分类号： H01L29/0673 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78684 ,  H01L29/78696 ,  Y10S977/762 ,  Y10S977/814 ,  Y10S977/90 ,  Y10S977/932 ,  Y10S977/943

摘要： Example embodiments relate to a crystalline nanowire substrate having a structure in which a crystalline nanowire film having a relatively fine line-width may be formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the crystalline nanowire substrate may include preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.

摘要翻译： 示例性实施例涉及具有其中可以在基板上形成具有相对较细的线宽的结晶纳米线膜的结构的晶体纳米线基板及其制造方法，以及使用其制造薄膜晶体管的方法 。 制造结晶纳米线基板的方法可以包括制备基板，在基板上形成绝缘膜，在绝缘膜上形成硅膜，将绝缘膜和硅膜图案化成带状，减小线宽 绝缘膜通过底切蚀刻绝缘膜的至少一个侧面，并且通过使硅膜熔化和结晶而在绝缘膜的上表面上形成自对准硅纳米线膜。

公开(公告)号：US07511381B2

公开(公告)日：2009-03-31

申请号：US11248620

申请日：2005-10-13

申请人： Takashi Noguchi ,  Wenxu Xianyu ,  Hans S. Cho ,  Huaxiang Yin

发明人： Takashi Noguchi ,  Wenxu Xianyu ,  Hans S. Cho ,  Huaxiang Yin

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/02598 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/66772

摘要： A thin film transistor (TFT) and a method of manufacturing the same are provided. The TFT includes a transparent substrate, an insulating layer on a region of the transparent substrate, a monocrystalline silicon layer, which includes source, drain, and channel regions, on the insulating layer and a gate insulating film and a gate electrode on the channel region of the monocrystalline silicon layer.

摘要翻译： 提供薄膜晶体管（TFT）及其制造方法。 TFT包括透明基板，在透明基板的区域上的绝缘层，在绝缘层上包括源极，漏极和沟道区的单晶硅层，以及沟道区上的栅极绝缘膜和栅极电极 的单晶硅层。

公开(公告)号：US07479442B2

公开(公告)日：2009-01-20

申请号：US11071175

申请日：2005-03-04

申请人： Takashi Noguchi ,  Wenxu Xianyu ,  Huaxiang Yin

发明人： Takashi Noguchi ,  Wenxu Xianyu ,  Huaxiang Yin

IPC分类号： H01L21/461

CPC分类号： H01L21/76254

摘要： Provided is a method of manufacturing a single crystal Si film. The method includes: preparing a Si substrate on which a first oxide layer is formed and an insulating substrate on which a second oxide layer is formed; forming a dividing layer at a predetermined depth from a surface of the Si substrate by implanting hydrogen ions from above the first oxide layer; bonding the insulating substrate to the Si substrate so that the first oxide layer contacts the second oxide layer; and forming a single crystal Si film having a predetermined thickness on the insulating substrate by cutting the dividing layer by irradiating a laser beam from above the insulating substrate. Therefore, a single crystal Si film having a predetermined thickness can be formed on an insulating substrate.

摘要翻译： 提供制造单晶Si膜的方法。 该方法包括：制备其上形成有第一氧化物层的Si衬底和形成有第二氧化物层的绝缘衬底; 通过从所述第一氧化物层上方注入氢离子，从所述Si衬底的表面形成预定深度的分隔层; 将绝缘基板接合到Si衬底，使得第一氧化物层接触第二氧化物层; 以及通过从绝缘基板上方照射激光束切割分隔层，在绝缘基板上形成具有预定厚度的单晶硅膜。 因此，可以在绝缘基板上形成具有预定厚度的单晶Si膜。

公开(公告)号：US20070187668A1

公开(公告)日：2007-08-16

申请号：US11598040

申请日：2006-11-13

申请人： Takashi Noguchi ,  Hans S. Cho ,  Wenxu Xianyu ,  Huaxiang Yin

发明人： Takashi Noguchi ,  Hans S. Cho ,  Wenxu Xianyu ,  Huaxiang Yin

IPC分类号： H01L31/00 ,  C30B13/02 ,  C30B19/00 ,  H01L29/04

CPC分类号： C30B25/18 ,  C30B23/025 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02639 ,  H01L21/02675 ,  H01L21/30625

摘要： A single crystal substrate and method of fabricating the same are provided. The single crystal substrate includes an insulator having a window exposing a portion of a substrate, a selective epitaxial growth layer formed on the portion of the substrate exposed through the window and a single crystalline layer formed on the insulator and the selective epitaxial growth layer using the selective epitaxial growth layer as an epitaxial seed layer.

摘要翻译： 提供单晶基板及其制造方法。 单晶衬底包括具有暴露衬底的一部分的窗口的绝缘体，形成在通过窗口暴露的衬底的部分上的选择性外延生长层和在绝缘体上形成的单晶层和使用所述选择性外延生长层 选择性外延生长层作为外延种子层。

公开(公告)号：US20060292313A1

公开(公告)日：2006-12-28

申请号：US11473067

申请日：2006-06-23

申请人： Wenxu Xianyu ,  Hans Cho ,  Takashi Noguchi ,  Young-Soo Park ,  Xiaoxin Zhang ,  Huaxiang Yin ,  Hyuck Lim ,  Kyung-Bae Park ,  Suk-Pil Kim

发明人： Wenxu Xianyu ,  Hans Cho ,  Takashi Noguchi ,  Young-Soo Park ,  Xiaoxin Zhang ,  Huaxiang Yin ,  Hyuck Lim ,  Kyung-Bae Park ,  Suk-Pil Kim

IPC分类号： C09K19/00

CPC分类号： C30B29/06 ,  Y10T428/10

摘要： Provided are methods of forming a more highly-oriented silicon thin layer having a larger grain size, and a substrate having the same. The methods may include forming an aluminum (Al) layer on a base substrate, forming a more highly-oriented Al layer by recrystallizing the Al layer under vacuum, forming a more highly-oriented γ-Al2O3 layer on the more highly-oriented Al layer and/or epitaxially growing a silicon layer on the more highly-oriented γ-Al2O3 layer. The method may be used to manufacture a semiconductor device having higher carrier mobility.

摘要翻译： 提供了形成具有较大晶粒尺寸的更高取向硅薄层的方法以及具有其的基板。 所述方法可以包括在基底基板上形成铝（Al）层，通过在真空下重结晶Al层，形成更高取向的Al层，形成更高取向的γ-Al 2 O 在更高取向的Al层上和/或在更高取向的γ-Al 2 O 3上外延生长硅层3层 >层。 该方法可用于制造具有较高载流子迁移率的半导体器件。

公开(公告)号：US20060267100A1

公开(公告)日：2006-11-30

申请号：US11430117

申请日：2006-05-09

申请人： Takashi Noguchi ,  Hans Cho ,  Wenxu Xianyu ,  Do-young Kim ,  Jang-yeong Kwon ,  Huaxiang Yin ,  Kyung-bae Park ,  Xiaozin Zhang

发明人： Takashi Noguchi ,  Hans Cho ,  Wenxu Xianyu ,  Do-young Kim ,  Jang-yeong Kwon ,  Huaxiang Yin ,  Kyung-bae Park ,  Xiaozin Zhang

IPC分类号： H01L27/12

CPC分类号： H01L21/84 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1203 ,  H01L29/66772 ,  H01L29/7842 ,  Y10S257/903

摘要： A semiconductor device including a substrate, a P-MOS single crystal TFT formed on the substrate, and an N-MOS single crystal TFT formed on the P-MOS single crystal TFT. The source region of the P-MOS single crystal TFT and the source region of the N-MOS single crystal TFT may be connected to each other. The P-MOS single crystal TFT and the N-MOS single crystal TFT may share a common gate. Also, the P-MOS single crystal TFT may include a single crystal silicon layer with a crystal plane of (100) and a crystal direction of . The N-MOS single crystal TFT may include a single crystal silicon layer having the same crystal direction as the single crystal silicon layer of the P-MOS single crystal TFT and having a tensile stress greater than the single crystal silicon layer of the P-MOS single crystal TFT.

摘要翻译： 包括基板，形成在基板上的P-MOS单晶TFT的半导体器件和形成在P-MOS单晶TFT上的N-MOS单晶TFT。 P-MOS单晶TFT的源极区域和N-MOS单晶TFT的源极区域可以彼此连接。 P-MOS单晶TFT和N-MOS单晶TFT可以共用公共栅极。 此外，P-MOS单晶TFT可以包括具有（100）的晶面和<100>的晶体方向的单晶硅层。 N-MOS单晶TFT可以包括与P-MOS单晶TFT的单晶硅层相同的晶体方向的单晶硅层，其拉应力大于P-MOS的单晶硅层 单晶TFT。

公开(公告)号：US08723181B2

公开(公告)日：2014-05-13

申请号：US12662272

申请日：2010-04-08

申请人： Huaxiang Yin ,  Takashi Noguchi ,  Wenxu Xianyu ,  Kyung-bae Park

发明人： Huaxiang Yin ,  Takashi Noguchi ,  Wenxu Xianyu ,  Kyung-bae Park

IPC分类号： H01L29/10

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L21/84 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/12 ,  H01L27/1281

摘要： Stacked transistors and electronic devices including the stacked transistors. An electronic device includes a substrate, a first transistor on the substrate and including a first active layer, a first gate, and a first gate insulating layer between the first active layer and the first gate, a first metal line spaced apart from the first gate on the substrate, a first insulating layer covering the first transistor and the first metal line, and a second transistor on the first insulating layer between the first transistor and the first metal line, and including a second active layer, a second gate, and a second gate insulating layer between the second active layer and the second gate.

摘要翻译： 堆叠晶体管和包括堆叠晶体管的电子器件。 电子器件包括衬底，衬底上的第一晶体管，并且在第一有源层和第一栅极之间包括第一有源层，第一栅极和第一栅极绝缘层，与第一栅极间隔开的第一金属线 在所述基板上，覆盖所述第一晶体管和所述第一金属线的第一绝缘层，以及在所述第一晶体管和所述第一金属线之间的所述第一绝缘层上的第二晶体管，并且包括第二有源层，第二栅极和 第二栅极绝缘层，位于第二有源层和第二栅极之间。

公开(公告)号：US08022408B2

公开(公告)日：2011-09-20

申请号：US12659776

申请日：2010-03-22

申请人： Hans S. Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-Young Kim ,  Huaxiang Yin ,  Xiaoxin Zhang

发明人： Hans S. Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-Young Kim ,  Huaxiang Yin ,  Xiaoxin Zhang

IPC分类号： H01L29/04

CPC分类号： H01L29/0673 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78684 ,  H01L29/78696 ,  Y10S977/762 ,  Y10S977/814 ,  Y10S977/90 ,  Y10S977/932 ,  Y10S977/943

摘要： Example embodiments relate to a crystalline nanowire substrate having a structure in which a crystalline nanowire film having a relatively fine line-width may be formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the crystalline nanowire substrate may include preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.

摘要翻译： 示例性实施例涉及具有其中可以在基板上形成具有相对较细的线宽的结晶纳米线膜的结构的晶体纳米线基板及其制造方法，以及使用其制造薄膜晶体管的方法 。 制造结晶纳米线基板的方法可以包括制备基板，在基板上形成绝缘膜，在绝缘膜上形成硅膜，将绝缘膜和硅膜图案化成带状，减小线宽 绝缘膜通过底切蚀刻绝缘膜的至少一个侧面，并且通过使硅膜熔化和结晶而在绝缘膜的上表面上形成自对准硅纳米线膜。

公开(公告)号：US07723168B2

公开(公告)日：2010-05-25

申请号：US11283874

申请日：2005-11-22

申请人： Huaxiang Yin ,  Takashi Noguchi ,  Wenxu Xianyu ,  Kyung-bae Park

发明人： Huaxiang Yin ,  Takashi Noguchi ,  Wenxu Xianyu ,  Kyung-bae Park

IPC分类号： H01L21/00

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L21/84 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/12 ,  H01L27/1281

摘要： A method of manufacturing a polycrystalline Si film and a method of manufacturing a stacked transistor are provided. The method of manufacturing the polycrystalline Si film includes preparing an insulating substrate on which is formed a transistor that includes a poly-Si active layer, a gate insulating layer, and a gate, sequentially formed, forming an interconnection metal line separated from the gate, forming an insulating layer that covers the transistor and the interconnection metal line, forming an amorphous silicon layer on the insulating layer; and annealing the amorphous silicon layer.

摘要翻译： 提供一种制造多晶Si膜的方法和制造堆叠晶体管的方法。 制造多晶Si膜的方法包括制备绝缘基板，其上形成有依次形成的多晶硅，具有多晶硅有源层，栅极绝缘层和栅极，形成与栅极分离的互连金属线， 形成覆盖晶体管和互连金属线的绝缘层，在绝缘层上形成非晶硅层; 并退火非晶硅层。