公开(公告)号：US20070068447A1

公开(公告)日：2007-03-29

申请号：US11526868

申请日：2006-09-26

申请人： Koji Izunome ,  Yumiko Hirano ,  Takashi Watanabe ,  Kazuhiko Kashima ,  Hiroyuki Saito ,  Takeshi Senda

发明人： Koji Izunome ,  Yumiko Hirano ,  Takashi Watanabe ,  Kazuhiko Kashima ,  Hiroyuki Saito ,  Takeshi Senda

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B15/203 ,  C30B15/04 ,  C30B29/06

摘要： In order to control a crystal defective area, to inhibit slip generation at the time of annealing treatment, and to manufacture a high quality silicon wafer of high strength with sufficient yields, a method of manufacturing a silicon wafer is provided in which a silicon single crystal is grown by way of Czochralski method under conditions where an oxygen concentration is 0.9×1018 atoms/cm3 or more and an oxidization induced stacking fault density is the maximum in an area within 20 mm of a wafer circumference, and an as-grown defect density of the wafer obtained by slicing the silicon single crystal is 1×107/cm3 or more over the whole region of the wafer.

摘要翻译： 为了控制晶体缺陷区域，为了抑制退火处理时的滑移产生，以及以高产率制造高强度的高质量硅晶片，提供了一种制造硅晶片的方法，其中硅单晶 在氧浓度为0.9×10 18原子/ cm 3以上的条件下通过切克劳斯基法生长，并且氧化诱导的堆垛层错密度在区域中是最大的 在晶片圆周的20mm以内，通过对硅单晶进行切片而获得的晶片的生长缺陷密度为1×10 7 / cm 3以上 晶片的区域。

公开(公告)号：US20070240628A1

公开(公告)日：2007-10-18

申请号：US11697097

申请日：2007-04-05

申请人： Takashi Watanabe ,  Hiroyuki Saito ,  Takeshi Senda ,  Koji Izunome ,  Kazuhiko Kashima

发明人： Takashi Watanabe ,  Hiroyuki Saito ,  Takeshi Senda ,  Koji Izunome ,  Kazuhiko Kashima

IPC分类号： C30B15/14 ,  H01L21/00 ,  C30B15/00

CPC分类号： C30B29/06 ,  C30B33/02 ,  H01L21/3225

摘要： Provided is a silicon wafer suitable for manufacturing a semiconductor device having a shallow junction. A silicon wafer wherein, in a region at a depth of less than 50 μm from a surface, a density of oxygen deposition materials each having a diameter of not less than 10 nm is not more than 1×108/cm3. A silicon wafer for a semiconductor device, which is manufactured by applying heat treatment at a heat treatment temperature of not less than 1000° C. for heat treatment time of not more than 3 msec, wherein, in a region at a depth of less than 50 μm from a surface, a density of oxygen deposition materials each having a diameter of not less than 10 nm is not more than 1×108/cm3.

摘要翻译： 提供了适合于制造具有浅结的半导体器件的硅晶片。 一种硅晶片，其中在距离表面小于50μm的深度的区域中，每个直径不小于10nm的氧沉积材料的密度不大于1×10 8 / cm 3。 一种用于半导体器件的硅晶片，其通过在不低于1000℃的热处理温度下进行热处理而不超过3毫秒的热处理时间进行热处理，其中在深度小于 50μm的表面，每个直径不小于10nm的氧沉积材料的密度不大于1×10 8 / cm 3。

公开(公告)号：US20120139088A1

公开(公告)日：2012-06-07

申请号：US13322080

申请日：2010-05-28

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Hiroyuki Saito

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Hiroyuki Saito

IPC分类号： H01L29/02 ,  H01L21/26

CPC分类号： H01L21/3225 ,  Y10S438/928

摘要： A silicon wafer for preventing a void defect in a bulk region from becoming source of contamination and slip generation in a device process is provided. And a heat-treating method thereof for reducing crystal defects such as COP in a region near the wafer surface to be a device active region is provided. The silicon wafer has a surface region 1 which is a defect-free region and a bulk region 2 including void defect of a polyhedron whose basic shape is an octahedron in which a corner portion of the polyhedron is in the curved shape and an inner-wall oxide film the void defect is removed. The silicon wafer is provided by performing a heat-treating method in which gas to be supplied, inner pressure of spaces and a maximum achievable temperature are set to a predetermined value when subjecting the silicon wafer produced by a CZ method to RTP.

摘要翻译： 提供了一种用于防止大块区域中的空隙缺陷成为装置处理中的污染源和滑移产生的硅晶片。 并且提供了一种用于在晶片表面附近的区域中减少诸如COP之类的晶体缺陷的热处理方法作为器件有源区。 硅晶片具有作为无缺陷区域的表面区域1和包括多面体的空隙的主体区域2，其基本形状为八面体，多面体的角部为弯曲形状，内壁 氧化膜去除空隙缺陷。 通过进行热处理方法来提供硅晶片，当将通过CZ方法制造的硅晶片经受RTP时，将待供给的气体，空间的内部压力和最大可实现温度设定为预定值。

公开(公告)号：US08999864B2

公开(公告)日：2015-04-07

申请号：US13322080

申请日：2010-05-28

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Hiroyuki Saito

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Hiroyuki Saito

IPC分类号： H01L21/26 ,  H01L21/00 ,  H01L21/322

CPC分类号： H01L21/3225 ,  Y10S438/928

摘要： A silicon wafer for preventing a void defect in a bulk region from becoming source of contamination and slip generation in a device process is provided. And a heat-treating method thereof for reducing crystal defects such as COP in a region near the wafer surface to be a device active region is provided. The silicon wafer has a surface region 1 which is a defect-free region and a bulk region 2 including void defect of a polyhedron whose basic shape is an octahedron in which a corner portion of the polyhedron is in the curved shape and an inner-wall oxide film the void defect is removed. The silicon wafer is provided by performing a heat-treating method in which gas to be supplied, inner pressure of spaces and a maximum achievable temperature are set to a predetermined value when subjecting the silicon wafer produced by a CZ method to RTP.

摘要翻译： 提供了一种用于防止大块区域中的空隙缺陷成为装置处理中的污染源和滑移产生的硅晶片。 并且提供了一种用于在晶片表面附近的区域中减少诸如COP之类的晶体缺陷的热处理方法作为器件有源区。 硅晶片具有作为无缺陷区域的表面区域1和包括多面体的空隙的主体区域2，其基本形状为八面体，多面体的角部为弯曲形状，内壁 氧化膜去除空隙缺陷。 通过进行热处理方法来提供硅晶片，当将通过CZ方法制造的硅晶片经受RTP时，将待供给的气体，空间的内部压力和最大可实现温度设定为预定值。

公开(公告)号：US08476149B2

公开(公告)日：2013-07-02

申请号：US12512492

申请日：2009-07-30

申请人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Yoichiro Mochizuki ,  Akihiko Kobayashi ,  Senlin Fu

发明人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Yoichiro Mochizuki ,  Akihiko Kobayashi ,  Senlin Fu

IPC分类号： H01L29/36

CPC分类号： H01L21/324 ,  C30B29/06 ,  C30B33/02 ,  H01L21/3225

摘要： A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating/cooling thermal process at a maximum temperature (T1) of 1300° C. or more, but less than 1380° C. in an oxidizing gas atmosphere having an oxygen partial pressure of 20% or more, but less than 100%. The silicon wafer according to the invention has, in a defect-free region (DZ layer) including at least a device active region of the silicon wafer, a high oxygen concentration region having a concentration of oxygen solid solution of 0.7×1018 atoms/cm3 or more and at the same time, the defect-free region contains interstitial silicon in supersaturated state.

摘要翻译： 将通过切克劳斯基法生长的硅单晶锭制成的硅晶片在氧化气体气氛中在1300℃以上但小于1380℃的最高温度（T1）下进行快速加热/冷却热处理 氧分压为20％以上但小于100％。 根据本发明的硅晶片在至少包括硅晶片的器件有源区的无缺陷区（DZ层）中具有0.7×10 18原子/ cm 3的氧固溶体浓度的高氧浓度区域 以上，同时无缺陷区域含有过饱和状态的间隙硅。

公开(公告)号：US20100197146A1

公开(公告)日：2010-08-05

申请号：US12656232

申请日：2010-01-21

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

IPC分类号： H01L21/302

CPC分类号： C30B33/02 ,  C30B29/06 ,  C30B33/005 ,  H01L21/3225 ,  H01L21/324 ,  H01L21/67109

摘要： In a method of heat treating a wafer obtained by slicing a silicon single crystal ingot manufactured by the Czochralski method, a rapid heating/cooling heat treatment is carried out by setting a holding time at an ultimate temperature of 1200° C. or more and a melting point of silicon or less to be equal to or longer than one second and to be equal to or shorter than 60 seconds in a mixed gas atmosphere containing oxygen having an oxygen partial pressure of 1.0% or more and 20% or less and argon, and an oxide film having a thickness of 9.1 nm or less or 24.3 nm or more is thus formed on a surface of the silicon wafer.

摘要翻译： 在通过切片由切克劳斯基法制造的硅单晶锭进行切片而得到的晶片的热处理方法中，通过将保持时间设定为1200℃以上的最终温度，进行快速加热/冷却热处理， 在含有氧分压为1.0％以上且20％以下的氧和氩气的混合气体气氛中，硅的熔点以下等于或大于1秒且等于或小于60秒， 因此在硅晶片的表面上形成厚度为9.1nm以下或24.3nm以上的氧化膜。

公开(公告)号：US08252700B2

公开(公告)日：2012-08-28

申请号：US12656232

申请日：2010-01-21

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C30B33/02 ,  C30B29/06 ,  C30B33/005 ,  H01L21/3225 ,  H01L21/324 ,  H01L21/67109

摘要： In a method of heat treating a wafer obtained by slicing a silicon single crystal ingot manufactured by the Czochralski method, a rapid heating/cooling heat treatment is carried out by setting a holding time at an ultimate temperature of 1200° C. or more and a melting point of silicon or less to be equal to or longer than one second and to be equal to or shorter than 60 seconds in a mixed gas atmosphere containing oxygen having an oxygen partial pressure of 1.0% or more and 20% or less and argon, and an oxide film having a thickness of 9.1 nm or less or 24.3 nm or more is thus formed on a surface of the silicon wafer.

摘要翻译： 在通过切片由切克劳斯基法制造的硅单晶锭进行切片而得到的晶片的热处理方法中，通过将保持时间设定为1200℃以上的最终温度，进行快速加热/冷却热处理， 在含有氧分压为1.0％以上且20％以下的氧和氩气的混合气体气氛中，硅的熔点以下等于或大于1秒且等于或小于60秒， 因此在硅晶片的表面上形成厚度为9.1nm以下或24.3nm以上的氧化膜。

公开(公告)号：US20100055884A1

公开(公告)日：2010-03-04

申请号：US12512229

申请日：2009-07-30

申请人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

发明人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

IPC分类号： H01L21/20

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B33/02 ,  H01L21/3225

摘要： In a manufacturing method for a silicon wafer, a first heat treatment process is performed on the silicon wafer while introducing a first gas having an oxygen gas in an amount of 0.01 vol. % or more and 1.00 vol. % or less and a rare gas, and a second heat treatment process is performed while stopping introducing the first gas and introducing a second gas having an oxygen gas in an amount of 20 vol. % or more and 100 vol. % or less and a rare gas. In the first heat treatment process, the silicon wafer is rapidly heated to first temperature of 1300° C. or higher and a melting point of silicon or lower at a first heating rate, and kept at the first temperature. In the second heat treatment process, the silicon wafer is kept at the first temperature, and rapidly cooled from the first temperature at a first cooling rate.

摘要翻译： 在硅晶片的制造方法中，在硅晶片上进行第一热处理工艺，同时引入具有0.01体积％的氧气的第一气体。 ％以上1.00体积％ ％以下和稀有气体，并且在停止引入第一气体并引入具有20体积％的氧气的第二气体的同时进行第二热处理工艺。 ％以上100体积％ ％以下，稀有气体。 在第一热处理工艺中，将硅晶片以第一加热速率快速加热到1300℃或更高的第一温度和硅的熔点或更低，并保持在第一温度。 在第二热处理工艺中，将硅晶片保持在第一温度，并以第一冷却速度从第一温度快速冷却。

公开(公告)号：US08399341B2

公开(公告)日：2013-03-19

申请号：US13387125

申请日：2010-05-17

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

IPC分类号： H01L21/20

CPC分类号： H01L21/3225

摘要： The invention is to provide a method for heat treating a silicon wafer reducing grown-in defects while suppressing generation of slip during RTP and improving surface roughness of the wafer. The method performing a first heat treatment while introducing a rare gas, the first heat treatment comprising the steps of rapidly heating the wafer to T1 of 1300° C. or higher and the melting point of silicon or lower, keeping the wafer at T1, rapidly cooling the wafer to T2 of 400-800° C. and keeping the wafer at T2; and performing a second heat treatment while introducing an oxygen gas in an amount of 20-100 vol. %, the second heat treatment comprising the steps of keeping the wafer at T2, rapidly heating the wafer from T2 to T3 of 1250° C. or higher and the melting point of silicon or lower, keeping the wafer at T3 and rapidly cooling the wafer.

摘要翻译： 本发明是提供一种硅晶片的热处理方法，其减少了生长中的缺陷，同时抑制了RTP期间的滑移产生并提高了晶片的表面粗糙度。 该方法在引入稀有气体的同时进行第一热处理，第一热处理包括将晶片快速加热至T1至1300℃或更高的温度，以及将晶片保持在T1处的硅的熔点或更低的温度，迅速地 将晶片冷却至T2至400-800℃，并将晶片保持在T2; 并且在引入20-100体积％的氧气的同时进行第二热处理。 ％，第二热处理包括将晶片保持在T2的步骤，将晶片从T2快速加热至T3，达到1250℃或更高，硅的熔点或更低，使晶片保持在T3，并快速冷却晶片 。

公开(公告)号：US20120184091A1

公开(公告)日：2012-07-19

申请号：US13387125

申请日：2010-05-17

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

IPC分类号： H01L21/263

CPC分类号： H01L21/3225

摘要： The invention is to provide a method for heat treating a silicon wafer reducing grown-in defects while suppressing generation of slip during RTP and improving surface roughness of the wafer. The method performing a first heat treatment while introducing a rare gas, the first heat treatment comprising the steps of rapidly heating the wafer to T1 of 1300° C. or higher and the melting point of silicon or lower, keeping the wafer at T1, rapidly cooling the wafer to T2 of 400-800° C. and keeping the wafer at T2; and performing a second heat treatment while introducing an oxygen gas in an amount of 20-100 vol. %, the second heat treatment comprising the steps of keeping the wafer at T2, rapidly heating the wafer from T2 to T3 of 1250° C. or higher and the melting point of silicon or lower, keeping the wafer at T3 and rapidly cooling the wafer.

摘要翻译： 本发明是提供一种硅晶片的热处理方法，其减少了生长中的缺陷，同时抑制了RTP期间的滑移产生并提高了晶片的表面粗糙度。 该方法在引入稀有气体的同时进行第一热处理，第一热处理包括将晶片快速加热至T1至1300℃或更高的温度，以及将晶片保持在T1处的硅的熔点或更低的温度，迅速地 将晶片冷却至T2至400-800℃，并将晶片保持在T2; 并且在引入20-100体积％的氧气的同时进行第二次热处理。 ％，第二热处理包括将晶片保持在T2的步骤，将晶片从T2快速加热至T3，达到1250℃或更高，硅的熔点或更低，使晶片保持在T3，并快速冷却晶片 。