公开(公告)号：US5233265A

公开(公告)日：1993-08-03

申请号：US561678

申请日：1990-08-01

申请人： Yukio Takasaki ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Sachio Ishioka ,  Tatsuro Kawamura ,  Keiichi Shidara ,  Eikyu Hiruma ,  Kenkichi Tanioka ,  Junichi Yamazaki ,  Kenji Sameshima ,  Hirokazu Matsubara ,  Kazuhisa Taketoshi ,  Mitsuo Kosugi ,  Shiro Suzuki ,  Takashi Yamashita ,  Masaaki Aiba ,  Yoshizumi Ikeda ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Hirofumi Ogawa

发明人： Yukio Takasaki ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Sachio Ishioka ,  Tatsuro Kawamura ,  Keiichi Shidara ,  Eikyu Hiruma ,  Kenkichi Tanioka ,  Junichi Yamazaki ,  Kenji Sameshima ,  Hirokazu Matsubara ,  Kazuhisa Taketoshi ,  Mitsuo Kosugi ,  Shiro Suzuki ,  Takashi Yamashita ,  Masaaki Aiba ,  Yoshizumi Ikeda ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Hirofumi Ogawa

IPC分类号： H01J29/45 ,  H01L31/0376 ,  H01L31/09 ,  H01L31/107 ,  H01L31/20

CPC分类号： H01J29/456 ,  H01L31/03765 ,  H01L31/095 ,  H01L31/107 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property. In one aspect of the present invention, the amorphous semiconductor layer is amorphous Se. In another aspect of the present invention, the amorphous semiconductor layer is composed mainly of tetrahedral elements including at least an element of hydrogen or halogens. When using the amorphous semiconductor layer composed mainly of tetrahedral elements, the charge multiplication effect is produced mainly in the interior of the amorphous semiconductor, and thus it is possible to obtain a thermally stable photoconductive device having a high sensitivity while keeping a good photoresponse.

摘要翻译： 公开了一种具有光电导层的光电导器件，该光电导层包括至少部分能够进行电荷倍增的非​​晶半导体层。 还公开了操作这种光电导器件的方法。 通过使用非晶半导体层的雪崩效应，可以实现高灵敏度的感光器件，同时保持低滞后特性。 在本发明的一个方面，非晶半导体层是非晶态Se。 在本发明的另一方面，非晶半导体层主要由至少包含氢或卤素元素的四面体元素组成。 当使用主要由四面体元素组成的非晶半导体层时，电荷倍增效应主要在非晶半导体的内部产生，因此可以获得具有高灵敏度的热稳定的光电导器件，同时保持良好的光响应。

公开(公告)号：US4866332A

公开(公告)日：1989-09-12

申请号：US16403

申请日：1987-02-19

申请人： Yukio Takasaki ,  Tatsuo Makishima ,  Kazutaka Tsuji ,  Tadaaki Hirai ,  Eisuke Inoue ,  Yasuhiko Nonaka ,  Naohiro Goto ,  Masanao Yamamoto ,  Keiichi Shidara ,  Kenkichi Tanioka ,  Takashi Yamashita ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Shirou Suzuki ,  Masaaki Aiba

发明人： Yukio Takasaki ,  Tatsuo Makishima ,  Kazutaka Tsuji ,  Tadaaki Hirai ,  Eisuke Inoue ,  Yasuhiko Nonaka ,  Naohiro Goto ,  Masanao Yamamoto ,  Keiichi Shidara ,  Kenkichi Tanioka ,  Takashi Yamashita ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Shirou Suzuki ,  Masaaki Aiba

IPC分类号： H01J29/45

CPC分类号： H01J29/456

摘要： A target of an image pickup tube, having a transparent substrate, a transparent conductive film, a p-type photoconductive film made mainly from amorphous Se, and an n-type conductive film capable of forming a rectifying contact at the interface with the p-type photoconductive film, using the rectifying contact as a reverse bias, characterized in that the p-type photoconductive film containing at least a region having more than 35%, and to 60% by weight of Te in the film thickness direction, and at least a region containing 0.005 to 5% by weight of at least a material capable of forming shallow levels in the amorphous Se in the film thickness direction, has good after-image characteristics even if operated at a high temperature.

摘要翻译： 具有透明基板，透明导电膜，主要由非晶形Se形成的p型光电导膜的图像拾取管的目标和能够在与p型交联的界面处形成整流接触的n型导电膜， 使用整流接触作为反向偏压，其特征在于，所述p型光电导膜至少含有在膜厚度方向上具有大于35％的区域和至少60重量％的Te，至少 至少含有0.005〜5重量％的能够在膜厚度方向上形成非晶态Se的浅层的材料的区域即使在高温下操作也具有良好的后图像特性。

公开(公告)号：US4860093A

公开(公告)日：1989-08-22

申请号：US143655

申请日：1988-01-13

申请人： Takashi Yamashita ,  Keiichi Shidara ,  Masaaki Aiba ,  Yukio Takasaki ,  Tadaaki Hirai

发明人： Takashi Yamashita ,  Keiichi Shidara ,  Masaaki Aiba ,  Yukio Takasaki ,  Tadaaki Hirai

IPC分类号： H04N5/228 ,  H04N9/09

CPC分类号： H04N5/228 ,  H04N9/09

摘要： The present invention relates to a method and an apparatus for driving image pick-up tubes in, particular, a color television camera or the like having more than one image pick-up tube and in particular to a method and an apparatus for driving image pick-up tubes in which the potentials of the cathode electrodes of the respective image pick-up tubes are set to the same common potential, the potential of the target electrode of at least one of the image pick-up tubes is set substantially to earth potential, target drive potentials are individually applied to the target electrodes of the other image pick-up tubes, and the target potential of each image pick-up tube is set to a value near the earth potential, so that a high S/N ratio is obtained. The driving appartatus can be miniaturized and easily driven. According to the invention, a capacitor, such as a chip capcitor or the like, with a low withstanding voltage can be used in a first-stage amplifier to amplify the video signal from the target electrode. This first-stage amplifier can be arranged near a signal output electrode of the target. Thus, the stray capacitance can be reduced.

摘要翻译： 本发明涉及一种用于驱动图像拾取管的方法和装置，特别是具有多于一个图像拾取管的彩色电视摄像机等，特别涉及一种用于驱动图像拾取的方法和装置 将各个图像拾取管的阴极的电位设定为相同的公共电位的至少一个摄像管的目标电极的电位基本上设定为接地电位的管 将目标驱动电位分别施加到其他摄像管的目标电极，并且将每个摄像管的目标电位设置为接近地电位的值，使得高S / N比为 获得。 驾驶舱可以小型化，易于驾驶。 根据本发明，可以在第一级放大器中使用诸如芯片电容器等具有低耐压的电容器来放大来自目标电极的视频信号。 该第一级放大器可以布置在目标的信号输出电极附近。 因此，可以减小杂散电容。

公开(公告)号：US4952839A

公开(公告)日：1990-08-28

申请号：US420773

申请日：1989-10-12

申请人： Kenkichi Tanioka ,  Mitsuo Kosugi ,  Junichi Yamazaki ,  Keiichi Shidara ,  Kazuhisa Taketoshi ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Shiro Suzuki ,  Takashi Yamashita ,  Masaaki Aiba ,  Yochizumi Ikeda ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

发明人： Kenkichi Tanioka ,  Mitsuo Kosugi ,  Junichi Yamazaki ,  Keiichi Shidara ,  Kazuhisa Taketoshi ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Shiro Suzuki ,  Takashi Yamashita ,  Masaaki Aiba ,  Yochizumi Ikeda ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

IPC分类号： H01J29/45

CPC分类号： H01J29/456

摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

公开(公告)号：US4888521A

公开(公告)日：1989-12-19

申请号：US69156

申请日：1987-07-02

申请人： Kenkichi Tanioka ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Junichi Yamazaki ,  Eikyuu Hiruma ,  Kazuhisa Taketoshi ,  Shiro Suzuki ,  Takashi Yamashita ,  Mitsuo Kosugi ,  Yochizumi Ikeda ,  Masaaki Aiba ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

发明人： Kenkichi Tanioka ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Junichi Yamazaki ,  Eikyuu Hiruma ,  Kazuhisa Taketoshi ,  Shiro Suzuki ,  Takashi Yamashita ,  Mitsuo Kosugi ,  Yochizumi Ikeda ,  Masaaki Aiba ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

IPC分类号： H01J29/45 ,  H01J31/38

CPC分类号： H01J29/456

摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

摘要翻译： 公开了一种具有光电导层的光电导器件，该光电导层包括至少部分能够进行电荷倍增的非​​晶半导体层。 还公开了操作这种光电导器件的方法。 通过使用非晶半导体层的雪崩效应，可以实现高灵敏度的感光器件，同时保持低滞后特性。

公开(公告)号：US5101255A

公开(公告)日：1992-03-31

申请号：US384080

申请日：1989-07-24

申请人： Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Yasuhiko Nonaka ,  Tatsuro Kawamura ,  Takashi Yamashita ,  Kazuhisa Taketoshi ,  Keiichi Shidara ,  Fumihiko Ando ,  Kenkichi Tanioka

发明人： Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Yasuhiko Nonaka ,  Tatsuro Kawamura ,  Takashi Yamashita ,  Kazuhisa Taketoshi ,  Keiichi Shidara ,  Fumihiko Ando ,  Kenkichi Tanioka

IPC分类号： H01L31/0272 ,  H01L31/09

CPC分类号： H01L31/0272 ,  H01L31/095

摘要： Disclosed is a photoelectric conversion device which comprises: a photoconductive layer made of amorphous semiconductor material which shows charge multiplication and which converts photo signals into electric signals; and a substrate having electric circuits or the like (for example switching elements) for reading the electric signals. The amorphous semiconductor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.

摘要翻译： 公开了一种光电转换装置，其包括：由非晶半导体材料制成的光电导层，其显示电荷倍增，并将光信号转换为电信号; 以及具有用于读取电信号的电路等的基板（例如开关元件）。 根据本发明使用的非晶半导体材料在预定的电场强度下显示充电倍增动作，从而实现具有不小于1的增益的高灵敏度光电转换装置。

公开(公告)号：US4900975A

公开(公告)日：1990-02-13

申请号：US67229

申请日：1987-06-29

申请人： Yasuharu Shimomoto ,  Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Hirokazu Matsubara ,  Kenji Sameshima ,  Junichi Yamazaki ,  Kenkichi Tanioka ,  Mitsuo Kosugi ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Takashi Yamashita

发明人： Yasuharu Shimomoto ,  Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Hirokazu Matsubara ,  Kenji Sameshima ,  Junichi Yamazaki ,  Kenkichi Tanioka ,  Mitsuo Kosugi ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Takashi Yamashita

IPC分类号： H01L31/08 ,  H01J29/45 ,  H01J31/38

CPC分类号： H01J29/456

摘要： A target of an image pickup tube is formed by laminating at least a transparent conductive film, an amorphous layer consisting essentially of silicon, and an amorphous layer consisting essentially of selenium in the above order on a light-transmitting substrate.

摘要翻译： 图像拾取管的目标是通过在透光性基板上层叠至少透明导电膜，基本上由硅构成的非晶层和基本上由硒组成的非晶层。

公开(公告)号：US4330733A

公开(公告)日：1982-05-18

申请号：US152291

申请日：1980-05-22

申请人： Keiichi Shidara ,  Naohiro Goto ,  Tatsuro Kawamura ,  Eikyu Hiruma ,  Yohitsumu Ikeda ,  Kenkichi Tanioka ,  Tadaaki Hirai ,  Yukio Takasaki ,  Chushirou Kusano ,  Tsuyoshi Uda ,  Yasuhiko Nonaka

发明人： Keiichi Shidara ,  Naohiro Goto ,  Tatsuro Kawamura ,  Eikyu Hiruma ,  Yohitsumu Ikeda ,  Kenkichi Tanioka ,  Tadaaki Hirai ,  Yukio Takasaki ,  Chushirou Kusano ,  Tsuyoshi Uda ,  Yasuhiko Nonaka

IPC分类号： H01J29/45 ,  H01L31/0264 ,  H01L31/0272 ,  H01L31/08 ,  H01J31/38

CPC分类号： H01L31/02725 ,  H01J29/45

摘要： A photoconductive target having an electrode and a P-type conductive layer mainly made of Se and making rectifying contact at an interface with the electrode, with at least Te being doped in a portion of the P-type conductive layer. At least one metal fluoride forming shallow levels is doped in the region where the signal current is generated for the most part of the P-type conductive layer with an average concentration of not less than 50 ppm and not more than 5% by weight. The metal fluoride is preferably at least one selected from the group consisting of LiF, NaF, MgF.sub.2, CaF.sub.2, BaF.sub.2, AlF.sub.3, CrF.sub.3, MnF.sub.2, CoF.sub.2, PbF.sub.2, CeF.sub.3 and TlF. The high light sticking of the photoconductive target can thus be considerably reduced.

摘要翻译： 一种光电导体，其具有主要由Se制成的电极和P型导电层，并在与电极的界面处进行整流接触，至少在P型导电层的一部分中掺杂有Te。 在大部分P型导电层产生信号电流的区域中掺杂有至少一种金属氟化物，平均浓度不低于50ppm且不超过5重量％。 金属氟化物优选为选自LiF，NaF，MgF 2，CaF 2，BaF 2，AlF 3，CrF 3，MnF 2，CoF 2，PbF 2，CeF 3和TlF中的至少一种。 因此可以显着地降低光导目标的高光粘附。

公开(公告)号：US5384597A

公开(公告)日：1995-01-24

申请号：US701508

申请日：1991-05-16

申请人： Kenji Sameshima ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Yukio Takasaki ,  Misao Kubota ,  Kenkichi Tanioka ,  Keiichi Shidara

发明人： Kenji Sameshima ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Yukio Takasaki ,  Misao Kubota ,  Kenkichi Tanioka ,  Keiichi Shidara

IPC分类号： H01J29/45 ,  H01J31/38 ,  H04N3/30

CPC分类号： H01J31/38 ,  H01J29/45

摘要： An image pickup tube is provided with the third electrode to control the potential of the region which is not scanned by an electron beam in the image pickup tube target section including a target electrode and a photo-conductive film. A method for operating this image pickup tube is also disclosed. Thus, undesired image phenomena which are generated when the image pickup tube is used with a relatively high target voltage, e.g., image distortion, shading, a waterfall phenomenon and image inversion phenomenon can be suppressed, thereby realizing a high sensitivity image pickup tube.

摘要翻译： 图像拾取管设置有第三电极，以控制包括目标电极和光导膜的图像拾取管目标部分中未被电子束扫描的区域的电位。 还公开了一种用于操作该图像拾取管的方法。 因此，可以抑制当使用具有较高目标电压（例如图像失真，阴影，瀑布现象和图像反转现象）的图像拾取管时产生的不期望的图像现象，从而实现高灵敏度图像拾取管。

公开(公告)号：US4980736A

公开(公告)日：1990-12-25

申请号：US155809

申请日：1988-02-16

申请人： Yukio Takasaki ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Sachio Ishioka ,  Tatsuro Kawamura ,  Keiichi Shidara ,  Eikyu Hiruma ,  Kenkichi Tanioka ,  Junichi Yamazaki ,  Kenji Sameshima ,  Hirokazu Matsubara ,  Kazuhisa Taketoshi

发明人： Yukio Takasaki ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Sachio Ishioka ,  Tatsuro Kawamura ,  Keiichi Shidara ,  Eikyu Hiruma ,  Kenkichi Tanioka ,  Junichi Yamazaki ,  Kenji Sameshima ,  Hirokazu Matsubara ,  Kazuhisa Taketoshi

IPC分类号： H01L31/0376 ,  H01L31/09 ,  H01L31/107 ,  H01L31/20

CPC分类号： H01L31/095 ,  H01L31/03765 ,  H01L31/107 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device using an amorphous material composed mainly of tetrahedral elements including at least an element of hydrogen and halogens as semiconductor material is disclosed. When a strong electric field is applied to a layer formed by using this amorphous semiconductor, a charge multiplication effect is produced mainly in the interior of the amorphous semiconductor and thus it is possible to obtain a thermally stable photoelectric conversion device having a high sensitivity while keeping a good photoresponse.