公开(公告)号：US20110056434A1

公开(公告)日：2011-03-10

申请号：US12868949

申请日：2010-08-26

申请人： Takatomo YAMAGUCHI ,  Akihiro SATO ,  Kenji SHIRAKO ,  Shuhei SAIDO

发明人： Takatomo YAMAGUCHI ,  Akihiro SATO ,  Kenji SHIRAKO ,  Shuhei SAIDO

IPC分类号： C23C16/32

CPC分类号： C23C16/325 ,  C23C16/46 ,  C30B25/08 ,  C30B29/36 ,  C30B30/04 ,  H01L21/67109

摘要： Provided is a heat treatment apparatus in which the temperature of an insulator heated by an induction current can be kept low and a susceptor can be efficiently heated. The heat treatment apparatus is provided for growing silicon carbide single crystal films or silicon carbide polycrystal films on a plurality of silicon carbide substrates. The heat treatment apparatus comprises a coil installed around an outside of a reaction tube to generate a magnetic field, a susceptor installed in the reaction tube and configured to be heated by an induction current, and an insulator installed between the susceptor and the reaction tube. The insulator is divided into parts in a circumferential direction, and an insulating material is inserted between the divided parts of the insulator.

摘要翻译： 提供一种热感应装置，其中通过感应电流加热的绝缘体的温度可以保持较低，并且可以有效地加热基座。 该热处理设备用于在多个碳化硅衬底上生长碳化硅单晶膜或碳化硅多晶膜。 热处理装置包括：安装在反应管外侧以产生磁场的线圈;安装在反应管中并被构造成由感应电流加热的基座;以及安装在基座和反应管之间的绝缘体。 绝缘子在圆周方向上被分成多个部分，并且绝缘材料插入在绝缘体的分割部分之间。

公开(公告)号：US20120067869A1

公开(公告)日：2012-03-22

申请号：US13229543

申请日：2011-09-09

申请人： Kenji SHIRAKO ,  Takatomo YAMAGUCHI ,  Shuhei SAIDO ,  Akihiro SATO

发明人： Kenji SHIRAKO ,  Takatomo YAMAGUCHI ,  Shuhei SAIDO ,  Akihiro SATO

IPC分类号： H05B6/10 ,  F28F13/00

CPC分类号： F28F1/00 ,  C23C16/44 ,  C23C16/4584 ,  C30B25/02 ,  C30B29/36 ,  F28F3/086 ,  F28F21/02 ,  H01L21/67109 ,  H05B6/02 ,  H05B6/105

摘要： Provided is a substrate processing apparatus capable of maintaining a temperature of a furnace port part at a heat-resistant temperature or less of each member constituting the furnace part. The substrate processing apparatus includes a process chamber configured to process a plurality of substrates vertically stacked at predetermined intervals; a substrate retainer configured to hold the plurality of substrates in the process chamber; and a first heat exchanger installed in the process chamber to support the substrate retainer from a lower portion of the substrate retainer, and configured to perform a heat exchange with a gas flowing in a downward direction from a side of the substrate retainer in the process chamber, wherein the first heat exchanger includes a hollow cylindrical insulating tube vertically extending in the downward direction and an insulating plate installed in the insulating tube, and regions in the insulating tube over and under the insulating plate are spatially connected to each other.

摘要翻译： 提供一种能够将炉口部的温度保持在构成炉部的各构件的耐热温度以下的基板处理装置。 基板处理装置包括：处理室，被配置为处理以预定间隔垂直堆叠的多个基板; 衬底保持器，其构造成将所述多个衬底保持在所述处理室中; 以及第一热交换器，其安装在所述处理室中，以从所述基板保持器的下部支撑所述基板保持器，并且被配置为与所述处理室中的所述基板保持器的侧面沿着向下的方向流动的气体进行热交换 其特征在于，所述第一热交换器具有向下方延伸的中空圆柱形绝缘管和安装在所述绝缘管中的绝缘板，绝缘板的上下绝缘体的区域彼此空间连接。

公开(公告)号：US20110204036A1

公开(公告)日：2011-08-25

申请号：US13029499

申请日：2011-02-17

申请人： Masaki MUROBAYASHI ,  Takatomo YAMAGUCHI ,  Kenji SHIRAKO ,  Shuhei SAIDO ,  Akihiro SATO ,  Daisuke HARA

发明人： Masaki MUROBAYASHI ,  Takatomo YAMAGUCHI ,  Kenji SHIRAKO ,  Shuhei SAIDO ,  Akihiro SATO ,  Daisuke HARA

IPC分类号： H05B1/00

CPC分类号： H01L21/67109 ,  H01L21/67248

摘要： Provided is a heat treatment apparatus having a temperature detection unit installed outside a reaction chamber and capable of preventing a process gas from contacting the temperature detection unit to form a film and improving reliability and reproduction of a measurement value of the temperature detection unit. The heat treatment apparatus for growing a single crystalline film or polycrystalline films on a plurality of substrates includes a boat configured to hold the plurality of substrates, a cylindrical heat generating material (23) installed to surround the boat and constituting a reaction chamber (32), a reaction tube (21) installed to surround the cylindrical heat generating material, a cylindrical insulating part (25) installed between the cylindrical heat generating material and the reaction tube, a temperature measurement chip (24) installed between the cylindrical heat generating material and the cylindrical insulating part, and a radiation thermometer (42) configured to measure a temperature of the temperature measurement chip, wherein the radiation thermometer is disposed below a lower end of the reaction tube.

摘要翻译： 本发明提供一种热处理装置，其具有安装在反应室外的温度检测部，能够防止处理气体与温度检测部接触而形成膜，提高温度检测部的测定值的可靠性和再生性。 用于在多个基板上生长单晶膜或多晶膜的热处理装置包括：构造成保持多个基板的舟形件，安装成围绕船形成并构成反应室（32）的圆柱形发热材料（23） ，围绕圆筒形发热材料安装的反应管（21），安装在圆筒形发热材料和反应管之间的圆柱形绝缘部分（25），安装在圆柱形发热材料和 圆柱形绝缘部件和配置成测量温度测量芯片的温度的辐射温度计（42），其中辐射温度计设置在反应管的下端。

公开(公告)号：US20090197409A1

公开(公告)日：2009-08-06

申请号：US12363059

申请日：2009-01-30

申请人： Shinya MORITA ,  Akihiro SATO ,  Akinori TANAKA ,  Shigeo NAKADA ,  Takayuki NAKADA ,  Shuhei SAIDO ,  Tomoyuki MATSUDA

发明人： Shinya MORITA ,  Akihiro SATO ,  Akinori TANAKA ,  Shigeo NAKADA ,  Takayuki NAKADA ,  Shuhei SAIDO ,  Tomoyuki MATSUDA

IPC分类号： H01L21/285 ,  C23C16/44

CPC分类号： H01L21/67109 ,  C23C16/4401 ,  C23C16/455 ,  H01L21/67098

摘要： Provided is a substrate processing apparatus. The substrate processing apparatus comprises a reaction tube; a heating device configured to heat the reaction tube; and a manifold installed outward as compared with the heating device and made of a nonmetallic material. A first thickness of the manifold defined in a direction perpendicular to a center axis of the reaction tube is greater than a second thickness of the manifold defined at a position adjacent to the reaction tube in a direction parallel to the center axis of the reaction tube. The manifold comprises a protrusion part of which at least a portion protrudes inward more than an inner wall of the reaction tube, and a gas supply unit disposed at at least the protrusion part for supplying gas to an inside of the reaction tube.

摘要翻译： 提供了一种基板处理装置。 基板处理装置包括反应管; 构造成加热反应管的加热装置; 以及与加热装置相比并且由非金属材料制成的歧管。 在垂直于反应管的中心轴的方向上限定的歧管的第一厚度大于在与反应管的中心轴平行的方向上与反应管相邻的位置处限定的歧管的第二厚度。 歧管包括突出部分，其至少一部分比反应管的内壁向内突出;以及气体供应单元，设置在至少突出部分处，以将气体供应到反应管的内部。