摘要:
This invention offers an electrostatic capacity type touch sensor that can be calibrated in a short period of time at a moment when a finger of operator or the like does not touch a touch pad. An absolute value of a difference (AD0−AD2) between a first output voltage AD0 and a third output voltage AD2 is compared with a first threshold value Vtr1 in step S10. When the difference (AD0−AD2) between the output voltages is smaller than the first threshold value Vtr1, it is judged that the finger of operator or the like does not touch the touch pad, and it is judged which of an offset in a second output voltage AD1 and an offset in the third output voltage AD2 is smaller than the other. When the offset in the second output voltage AD1 is smaller than the offset in the third output voltage AD2, the modification to the second calibration data X1 is permitted.
摘要:
The invention provides an electrostatic capacity type touch sensor that is not influenced by a parasitic capacitor formed between a sensor line connected to a touch sensor pad and other signal line and provides a stable sensor output. A sensor line connected to a touch sensor pad is connected to a non-inverting input terminal (+) of a charge amplifier. An LED is disposed in the touch sensor pad, and the cathode of the LED is connected to an LED signal line. Since the LED signal line is disposed adjacent to the sensor line, a parasitic capacitor is formed between the LED signal line and the sensor line. In order to keep the capacitance of this parasitic capacitor constant, a pull-up resistor is connected to the LED signal line. The LED signal line is biased to a power supply potential Vdd by the pull-up resistor.
摘要:
There is offered an electrostatic capacity type touch sensor capable of detecting a large number of touch positions with high accuracy. The electrostatic capacity type touch sensor is composed of a touch panel and a signal processing circuit. The touch panel is structured to include first through fourth detection electrodes, first and second common electric potential lines, a common electric potential wiring, a common electric potential terminal and first through fourth output terminals disposed on an insulating substrate. The signal processing circuit is structured to include a clock generator, a selection circuit, a charge amplifier, an A/D converter and an arithmetic unit. The charge amplifier detects a change in capacitance induced by that a finger of an operator touches the first through fourth detection electrodes.
摘要:
A plurality of detection patterns are formed as conductive patterns directly on a back surface of a panel substrate to which an operation object such as a finger comes in proximity from a front surface side thereof. By independently detecting a change in capacitance in the plurality of detection patterns caused by proximity of the operation object from the front surface side, proximity of the operation object to the panel substrate is detected.
摘要:
Cost is reduced and reliability is improved with a BGA (Ball Grid Array) type semiconductor device which has ball-shaped conductive terminals. A first wiring is formed on an insulation film which is formed on a surface of a semiconductor die. A glass substrate is bonded over the surface of the semiconductor die, and a side surface and a back surface of the semiconductor die are covered with an insulation film. A second wiring is connected to a side surface or a back surface of the first wiring and extending over the back surface of the semiconductor die. A conductive terminal such as a bump is formed on the second wiring.
摘要:
Cost is reduced and reliability is improved with a BGA (Ball Grid Array) type semiconductor device which has ball-shaped conductive terminals. A first wiring is formed on an insulation film which is formed on a surface of a semiconductor die. A glass substrate is bonded over the surface of the semiconductor die, and a side surface and a back surface of the semiconductor die are covered with an insulation film. A second wiring is connected to a side surface or a back surface of the first wiring and extending over the back surface of the semiconductor die. A conductive terminal such as a bump is formed on the second wiring.
摘要:
Cost is reduced and reliability is improved with a BGA (Ball Grid Array) type semiconductor device which has ball-shaped conductive terminals. A first wiring is formed on an insulation film which is formed on a surface of a semiconductor die. A glass substrate is bonded over the surface of the semiconductor die, and a side surface and a back surface of the semiconductor die are covered with an insulation film. A second wiring is connected to a side surface or a back surface of the first wiring and extending over the back surface of the semiconductor die. A conductive terminal such as a bump is formed on the second wiring.
摘要:
Cost is reduced and reliability is improved with a BGA (Ball Grid Array) type semiconductor device which has ball-shaped conductive terminals. A first wiring is formed on an insulation film which is formed on a surface of a semiconductor die. A glass substrate is bonded over the surface of the semiconductor die, and a side surface and a back surface of the semiconductor die are covered with an insulation film. A second wiring is connected to a side surface or a back surface of the first wiring and extending over the back surface of the semiconductor die. A conductive terminal such as a bump is formed on the second wiring.