公开(公告)号：US06869499B2

公开(公告)日：2005-03-22

申请号：US10157445

申请日：2002-05-28

申请人： Takayuki Toshima ,  Naoki Shindo ,  Tadashi Iino

发明人： Takayuki Toshima ,  Naoki Shindo ,  Tadashi Iino

IPC分类号： G03F7/42 ,  B08B7/00 ,  B08B9/08 ,  C23C16/00 ,  C23F1/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065

CPC分类号： B08B7/00 ,  B08B9/08

摘要： After semiconductor wafers W have been processed with ozone gas and steam fed into a processing vessel 10, air is fed into the processing vessel 10 from an air supply source connected to an ozone gas supply pipe 42 for feeding ozone gas into the processing vessel 10, whereby an atmosphere of the ozone gas in the processing vessel 10 is replaced with an atmosphere of the air.

摘要翻译： 半导体晶片W已经用臭氧气体和蒸汽进料到加工容器10中后，空气从连接到臭氧气体供应管42的空气供应源送入处理容器10，用于将臭氧气体输送到处理容器10中， 由此处理容器10中的臭氧气体的气氛被空气的气氛所代替。

公开(公告)号：US07410543B2

公开(公告)日：2008-08-12

申请号：US10957003

申请日：2004-10-01

申请人： Takayuki Toshima ,  Naoki Shindo ,  Tadashi Iino

发明人： Takayuki Toshima ,  Naoki Shindo ,  Tadashi Iino

IPC分类号： B08B3/00 ,  B08B5/00

CPC分类号： H01L21/6708 ,  H01L21/31138 ,  Y10S134/902

摘要： Resists can be removed while metal contamination of wafers, etc. and generation of particles, and growth of oxide films are suppressed. A substrate processing method comprises feeding a processing gas, such as ozone gas, into a processing vessel to pressurize an atmosphere surrounding a substrate. A solvent gas, such as steam, is fed into the processing vessel while the processing gas is fed into the processing vessel, whereby a resist of the substrate can be removed with the solvent gas and the processing gas while metal corrosion, etc. can be prevented.

摘要翻译： 可以去除抗蚀剂，同时抑制晶片等的金属污染和颗粒的产生以及氧化膜的生长被抑制。 基板处理方法包括将诸如臭氧气体的处理气体进料到处理容器中以对基板周围的气氛加压。 将诸如蒸汽的溶剂气体加入处理容器中，同时将处理气体进料到处理容器中，由此可以用溶剂气体和处理气体除去基板的抗蚀剂，同时金属腐蚀等可以 防止了

公开(公告)号：US20050051246A1

公开(公告)日：2005-03-10

申请号：US10957003

申请日：2004-10-01

申请人： Takayuki Toshima ,  Naoki Shindo ,  Tadashi Iino

发明人： Takayuki Toshima ,  Naoki Shindo ,  Tadashi Iino

IPC分类号： G03F7/42 ,  B08B5/00 ,  H01L21/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/311 ,  C22B9/05

CPC分类号： H01L21/6708 ,  H01L21/31138 ,  Y10S134/902

摘要： Resists can be removed while metal contamination of wafers, etc. and generation of particles, and growth of oxide films are suppressed. An ozone gas feed system 40 for feeding ozone gas 2 into a processing vessel 10 holding wafers W, and a steam feed means 30 for feeding steam 1 into the processing vessel 10 are provided. An on-off valve 49 inserted in the ozone gas feed pipe 42, an on-off valve 36 inserted in the steam feed pipe 34 and a switch 48 and an on-off valve 49 of ozone gas generator 41 are connected to CPU 100 which is control means and are controlled by the CPU 100. Ozone gas 2 is fed into the processing vessel 10 to pressurize the atmosphere surrounding the wafers W, and then steam 1 is fed into the processing vessel 10 while ozone gas 2 is fed into the processing vessel 10, whereby a resist of the wafers W can be removed with the steam 1 and the ozone 2 while metal corrosion, etc. can be prevented.

摘要翻译： 可以去除抗蚀剂，同时抑制晶片等的金属污染和颗粒的产生以及氧化膜的生长被抑制。 提供用于将臭氧气体2供给到保持晶片W的处理容器10中的臭氧气体供给系统40，以及用于将蒸汽1供给到处理容器10中的蒸汽供给装置30。 插入臭氧气体供给管42的开闭阀49，插入蒸汽供给管34的开关阀36，臭氧气体发生器41的开关48和开关阀49连接到CPU100，CPU100 是控制装置，由CPU100控制。臭氧气体2被送入处理容器10中以对周围的晶片W加压，然后将蒸汽1送入处理容器10，同时将臭氧气体2送入处理 容器10，由此可以用蒸汽1和臭氧2除去晶片W的抗蚀剂，同时可以防止金属腐蚀等。

公开(公告)号：US06817368B2

公开(公告)日：2004-11-16

申请号：US09971136

申请日：2001-10-03

申请人： Takayuki Toshima ,  Naoki Shindo ,  Tadashi Iino

发明人： Takayuki Toshima ,  Naoki Shindo ,  Tadashi Iino

IPC分类号： B08B302

CPC分类号： H01L21/6708 ,  H01L21/31138 ,  Y10S134/902

摘要： Resists can be removed while metal contamination of wafers, etc. and generation of particles, and growth of oxide films are suppressed. An ozone gas feed system 40 for feeding ozone gas 2 into a processing vessel 10 holding wafers W, and a steam feed means 30 for feeding steam 1 into the processing vessel 10 are provided. An on-off valve 49 inserted in the ozone gas feed pipe 42, an on-off valve 36 inserted in the steam feed pipe 34 and a switch 48 and an on-off valve 49 of ozone gas generator 41 are connected to CPU 100 which is control means and are controlled by the CPU 100. Ozone gas 2 is fed into the processing vessel 10 to pressurize the atmosphere surrounding the wafers W, and then steam 1 is fed into the processing vessel 10 while ozone gas 2 is fed into the processing vessel 10, whereby a resist of the wafers W can be removed with the steam 1 and the ozone 2 while metal corrosion, etc. can be prevented.

摘要翻译： 可以去除抗蚀剂，同时抑制晶片等的金属污染和颗粒的产生以及氧化膜的生长被抑制。 提供用于将臭氧气体2供给到保持晶片W的处理容器10中的臭氧气体供给系统40，以及用于将蒸汽1供给到处理容器10中的蒸汽供给装置30。 插入臭氧气体供给管42的开闭阀49，插入蒸汽供给管34的开关阀36，臭氧气体发生器41的开关48和开关阀49连接到CPU100，CPU100 是控制装置，由CPU100控制。臭氧气体2被送入处理容器10中以对周围的晶片W加压，然后将蒸汽1送入处理容器10，同时将臭氧气体2送入处理 容器10，由此可以利用蒸汽1和臭氧2除去晶片W的抗蚀剂，同时可以防止金属腐蚀等。

公开(公告)号：US07191785B2

公开(公告)日：2007-03-20

申请号：US10606135

申请日：2003-06-25

申请人： Takayuki Toshima ,  Kinya Ueno ,  Miyako Yamasaka ,  Hideyuki Tsutsumi ,  Tadashi Iino ,  Yuji Kamikawa

发明人： Takayuki Toshima ,  Kinya Ueno ,  Miyako Yamasaka ,  Hideyuki Tsutsumi ,  Tadashi Iino ,  Yuji Kamikawa

IPC分类号： B08B3/10

CPC分类号： H01L21/31133 ,  G03F7/423 ,  H01L21/67051 ,  H01L21/67057 ,  Y10S134/902

摘要： Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.

公开(公告)号：US20070204885A1

公开(公告)日：2007-09-06

申请号：US11706557

申请日：2007-02-13

申请人： Takayuki Toshima ,  Kinya Ueno ,  Miyako Yamasaka ,  Hideyuki Tsutsumi ,  Tadashi Iino ,  Yuji Kamikawa

发明人： Takayuki Toshima ,  Kinya Ueno ,  Miyako Yamasaka ,  Hideyuki Tsutsumi ,  Tadashi Iino ,  Yuji Kamikawa

IPC分类号： B08B3/00

CPC分类号： H01L21/31133 ,  G03F7/423 ,  H01L21/67051 ,  H01L21/67057 ,  Y10S134/902

摘要： Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.

摘要翻译： 通过将半导体晶片放置在处理容器中，在晶片表面形成纯水膜，通过将臭氧气体溶解在纯水膜中形成臭氧水膜，除去形成在晶片上的抗蚀剂膜，从而清除半导体晶片 臭氧水膜的代理。 纯水膜通过在晶片的表面上冷凝蒸汽而形成。 形成在晶片表面上的抗蚀剂膜也可以通过使用通过供应到处理容器中的蒸汽和臭氧气体之间的相互作用产生的羟基自由基来除去。 因此，可以高效地除去抗蚀剂膜。

公开(公告)号：US20050011537A1

公开(公告)日：2005-01-20

申请号：US10606135

申请日：2003-06-25

申请人： Takayuki Toshima ,  Kinya Ueno ,  Miyako Yamasaka ,  Hideyuki Tsutsumi ,  Tadashi Iino ,  Yuji Kamikawa

发明人： Takayuki Toshima ,  Kinya Ueno ,  Miyako Yamasaka ,  Hideyuki Tsutsumi ,  Tadashi Iino ,  Yuji Kamikawa

IPC分类号： H01L21/304 ,  G03F7/42 ,  H01L21/311 ,  F23J1/00 ,  B08B3/10

CPC分类号： H01L21/31133 ,  G03F7/423 ,  H01L21/67051 ,  H01L21/67057 ,  Y10S134/902

摘要： Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.

摘要翻译： 通过将半导体晶片放置在处理容器中，在晶片表面形成纯水膜，通过将臭氧气体溶解在纯水膜中形成臭氧水膜，除去形成在晶片上的抗蚀剂膜，从而清除半导体晶片 臭氧水膜的代理。 纯水膜通过在晶片的表面上冷凝蒸汽而形成。 形成在晶片表面上的抗蚀剂膜也可以通过使用通过供应到处理容器中的蒸汽和臭氧气体之间的相互作用产生的羟基自由基来除去。 因此，可以高效地除去抗蚀剂膜。

公开(公告)号：US06613692B1

公开(公告)日：2003-09-02

申请号：US09628235

申请日：2000-07-28

申请人： Takayuki Toshima ,  Kinya Ueno ,  Miyako Yamasaka ,  Hideyuki Tsutsumi ,  Tadashi Iino ,  Yuji Kamikawa

发明人： Takayuki Toshima ,  Kinya Ueno ,  Miyako Yamasaka ,  Hideyuki Tsutsumi ,  Tadashi Iino ,  Yuji Kamikawa

IPC分类号： H01L21302

CPC分类号： H01L21/31133 ,  G03F7/423 ,  H01L21/67051 ,  H01L21/67057 ,  Y10S134/902

摘要： Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.

摘要翻译： 通过将半导体晶片放置在处理容器中，在晶片表面形成纯水膜，通过将臭氧气体溶解在纯水膜中形成臭氧水膜，除去形成在晶片上的抗蚀剂膜，从而清除半导体晶片 臭氧水膜的代理。 纯水膜通过在晶片的表面上冷凝蒸汽而形成。 形成在晶片表面上的抗蚀剂膜也可以通过使用通过供应到处理容器中的蒸汽和臭氧气体之间的相互作用产生的羟基自由基来除去。 因此，可以高效地除去抗蚀剂膜。

公开(公告)号：US07731799B2

公开(公告)日：2010-06-08

申请号：US10579423

申请日：2004-12-07

申请人： Takayuki Toshima ,  Tadashi Iino ,  Yusuke Saito ,  Mitsunori Nakamori ,  Noritaka Uchida ,  Takehiko Orii

发明人： Takayuki Toshima ,  Tadashi Iino ,  Yusuke Saito ,  Mitsunori Nakamori ,  Noritaka Uchida ,  Takehiko Orii

IPC分类号： B08B3/08

CPC分类号： G03F7/427 ,  H01L21/31138

摘要： A substrate processing method which removes an ArF resist film from a wafer having the ArF resist film. As an ultraviolet irradiation process is performed on the ArF resist film, and then an ozone gas and water vapor are fed to the ArF resist film, the ArF resist film is altered in a water-soluble state. Thereafter, the ArF resist film is removed from the substrate by feeding pure water to the ArF resist film altered into the water-soluble state.

摘要翻译： 从具有ArF抗蚀剂膜的晶片去除ArF抗蚀剂膜的基板处理方法。 由于在ArF抗蚀剂膜上进行紫外线照射处理，然后向ArF抗蚀剂膜供给臭氧气体和水蒸汽，所以ArF抗蚀剂膜变为水溶性状态。 此后，通过将纯水供给到改变成水溶性状态的ArF抗蚀剂膜，从基板除去ArF抗蚀剂膜。

公开(公告)号：US06688020B2

公开(公告)日：2004-02-10

申请号：US09839430

申请日：2001-04-20

申请人： Takayuki Toshima ,  Tadashi Iino

发明人： Takayuki Toshima ,  Tadashi Iino

IPC分类号： F26B1310

CPC分类号： H01L21/67017 ,  B08B7/00 ,  H01L21/67028

摘要： A substrate processing apparatus and method which can prevent accidents in advance so as to ensure safety against interruption of operations of the apparatus and leakage of processing substances. In a substrate processing method in which wafers W are processed are processed by feeding an ozone gas 5 to the wafers W loaded in a processing vessel 2 while an interior atmosphere in the processing vessel is being exhausted to be passed through an ozone killer 10, the ozone gas 5 is fed under the conditions that the processing vessel 2 is tightly closed, and the ozone killer in its normal state. When the processing is interrupted, an interior atmosphere in the processing vessel 2 is forcedly exhausted. When the gas leaks, the interior atmosphere and a peripheral atmosphere of the processing vessel 2 are forcedly exhausted while the feed of the ozone gas 5 is paused. The processing gas is fed under a condition that the processing vessel is tightly closed, and the post-treatment of the exhausted interior atmosphere is normally carried out.

摘要翻译： 一种可以预先事先防止事故的基板处理装置和方法，以确保安全性，防止装置的操作中断和处理物质的泄漏。 在处理容器中的内部气氛被排出以通过臭氧消毒器10的同时，通过将臭氧气体5供给到装载在处理容器2中的晶片W来处理晶片W处理的基板处理方法， 臭氧气体5在处理容器2紧密关闭的条件下进入，臭氧消毒器处于正常状态。 当处理中断时，处理容器2中的内部气氛被强制耗尽。 当气体泄漏时，处理容器2的内部气氛和周围气氛被强制排出，同时臭氧气体5的进料暂停。 处理气体在处理容器密闭的条件下进料，并且通常进行排气的内部气氛的后处理。