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    Corrosion-resistant silicon nitride ceramics
    2.
    发明授权
    Corrosion-resistant silicon nitride ceramics 失效
    耐腐蚀氮化硅陶瓷

    公开(公告)号：US07510785B2

    公开(公告)日：2009-03-31

    申请号：US11153890

    申请日：2005-06-15

    申请人： Takero Fukudome ,  Sazo Tsuruzono ,  Isao Yuri ,  Tohru Hisamatsu

    发明人： Takero Fukudome ,  Sazo Tsuruzono ,  Isao Yuri ,  Tohru Hisamatsu

    IPC分类号： B32B9/04 ,  C04B35/50

    CPC分类号： C04B35/584 ,  C04B35/16 ,  C04B35/486 ,  C04B35/6303 ,  C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  C04B2235/3206 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3289 ,  C04B2235/3418 ,  C04B2235/3463 ,  C04B2235/3481 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/9607 ,  F01D5/288 ,  F05D2300/21 ,  F05D2300/2283 ,  C04B41/4539 ,  C04B41/5024 ,  C04B41/5037 ,  C04B41/5042 ,  C04B41/524

    摘要： A corrosion-resistant silicon nitride ceramics in which an adhesion enhancing layer (3), a stress relaxing layer (4) and a crack extension preventing layer (5) are laminated in this order on a ceramic substrate (2) composed mainly of silicon nitride, and a surface corrosion-resistant layer (6) composed mainly of zirconium oxide stabilized by an element of the group 3a of the periodic table is laminated. The thermal expansion coefficient (α0) of the ceramic substrate (2), the thermal expansion coefficient(α1) of the adhesion enhancing layer (3), and the thermal expansion coefficient (α2) of the stress relaxing layer (4), the thermal expansion coefficient (α3) of the crack extension preventing layer (5), and the thermal expansion coefficient (α4) of the surface corrosion-resistant layer (6) satisfy the following relational expressions (I) to (III): α0≈α1  (I) α3

    摘要翻译： 将其中粘附增强层（3），应力缓和层（4）和裂纹扩展防止层（5）依次层叠在主要由氮化硅构成的陶瓷基板（2）上的耐腐蚀氮化硅陶瓷 层叠由元素周期表第3a族元素稳定化的氧化锆主要构成的表面耐腐蚀层（6）。 陶瓷基板（2）的热膨胀系数（α0），粘合增强层（3）的热膨胀系数（α1）和应力缓和层（4）的热膨胀系数（α2），热 裂纹扩展防止层（5）的膨胀系数（α3）和表面耐腐蚀层（6）的热膨胀系数（α4）满足以下关系式（I）〜（III）：< line-formula description =“In-line Formulas”end =“lead”？>alpha0≈alpha1（I）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？ line-formula description =“In-line Formulas”end =“lead”？> alpha3 line-formula description =“In-line Formulas”end =“lead”？> alpha3

    Corrosion-resistant silicon nitride ceramics
    3.
    发明申请
    Corrosion-resistant silicon nitride ceramics 失效
    耐腐蚀氮化硅陶瓷

    公开(公告)号：US20060073361A1

    公开(公告)日：2006-04-06

    申请号：US11153890

    申请日：2005-06-15

    申请人： Takero Fukudome ,  Sazo Tsuruzono ,  Isao Yuri ,  Tohru Hisamatsu

    发明人： Takero Fukudome ,  Sazo Tsuruzono ,  Isao Yuri ,  Tohru Hisamatsu

    IPC分类号： B32B9/00 ,  B32B19/00

    CPC分类号： C04B35/584 ,  C04B35/16 ,  C04B35/486 ,  C04B35/6303 ,  C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  C04B2235/3206 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3289 ,  C04B2235/3418 ,  C04B2235/3463 ,  C04B2235/3481 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/9607 ,  F01D5/288 ,  F05D2300/21 ,  F05D2300/2283 ,  C04B41/4539 ,  C04B41/5024 ,  C04B41/5037 ,  C04B41/5042 ,  C04B41/524

    摘要： A corrosion-resistant silicon nitride ceramics in which an adhesion enhancing layer (3), a stress relaxing layer (4) and a crack extension preventing layer (5) are laminated in this order on a ceramic substrate (2) composed mainly of silicon nitride, and a surface corrosion-resistant layer (6) composed mainly of zirconium oxide stabilized by an element of the group 3a of the periodic table is laminated. The thermal expansion coefficient (α0) of the ceramic substrate (2), the thermal expansion coefficient (α1) of the adhesion enhancing layer (3), and the thermal expansion coefficient (α2) of the stress relaxing layer (4), the thermal expansion coefficient (α3) of the crack extension preventing layer (5), and the thermal expansion coefficient (α4) of the surface corrosion-resistant layer (6) satisfy the following relational expressions (I) to (III): α0≈α1  (I) α3

    摘要翻译： 将其中粘附增强层（3），应力缓和层（4）和裂纹扩展防止层（5）依次层叠在主要由氮化硅构成的陶瓷基板（2）上的耐腐蚀氮化硅陶瓷 层叠由元素周期表第3a族元素稳定化的氧化锆主要构成的表面耐腐蚀层（6）。 陶瓷基板（2）的热膨胀系数（α<0 ），粘附增强层（3）的热膨胀系数（α<1） 应力缓和层（4）的膨胀系数（α2 2），裂纹扩展防止层（5）的热膨胀系数（α3/3），热膨胀系数 表面耐腐蚀层（6）的膨胀系数（α4 S）满足下列关系式（I）〜（III）：＆lt;＆lt;直线式说明=“在线式 “end =”lead“？>α≈alpha1（i）<？in-line-formula description =”In-line Formulas“end =”tail“ （II）<α-in-line-formula description =“In-line Formulas”end =“lead”？>α line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> alpha <3>

    Sintered product of silicon nitride
    5.
    发明授权
    Sintered product of silicon nitride 有权
    氮化硅烧结制品

    公开(公告)号：US06297184B1

    公开(公告)日：2001-10-02

    申请号：US09510392

    申请日：2000-02-22

    申请人： Takero Fukudome ,  Masahiro Sato ,  Katsushi Sakaue

    发明人： Takero Fukudome ,  Masahiro Sato ,  Katsushi Sakaue

    IPC分类号： C04B35587

    CPC分类号： C04B35/584

    摘要： A sintered product of silicon nitride has a crystal phase of RE2Si3N2O5 or RE3AlSi2O7N2 (RE is an element of the Group 3a of periodic table) precipitated on the grain boundaries of the silicon nitride crystal phase, and exhibits a high strength over a wide temperature region of from normal temperature to a temperature of as high as 1000° C., as well as excellent oxidation resistance and static fatigue property. The sintered product of silicon nitride is very useful as parts for heat engines, such as parts for engines and parts for gas turbines.

    摘要翻译： 氮化硅的烧结体具有在氮化硅结晶相的晶界上析出的RE 2 Si 3 N 2 O 5或RE 3 AlSi 2 O 7 N 2的结晶相（RE是周期表的第3a族的元素），并且在宽的温度范围 从常温到高达1000℃的温度，以及优异的抗氧化性和静态疲劳性能。 氮化硅的烧结产品非常适用于热机的部件，例如用于发动机的零件和用于燃气轮机的部件。

    Semi-insulating aluminum nitride sintered body
    7.
    发明授权
    Semi-insulating aluminum nitride sintered body 失效
    半绝缘氮化铝烧结体

    公开(公告)号：US5958813A

    公开(公告)日：1999-09-28

    申请号：US978067

    申请日：1997-11-25

    申请人： Hiroshi Aida ,  Yumiko Ito ,  Takero Fukudome ,  Kazuhiko Mikami

    发明人： Hiroshi Aida ,  Yumiko Ito ,  Takero Fukudome ,  Kazuhiko Mikami

    IPC分类号： B23Q3/154 ,  C04B35/581 ,  B23Q3/15

    CPC分类号： C04B35/581 ,  B23Q3/154 ,  Y10T279/23

    摘要： The semi-insulating aluminum nitride sintered body of this invention is composed of aluminum nitride particles, electroconductive fine particles having a volume inherent resistivity value of not larger than 10.sup.2 .OMEGA..multidot.cm which are dispersed among the aluminum nitride particles and an intergranular phase formed from an oxide containing at least one element selected from the group consisting of Ti, Ce, Ni, Ta, Y, Er and Yb, or from Si. This sintered body has a volume inherent resistivity value of 10.sup.4 to 10.sup.11 .OMEGA..multidot.cm, and is very useful, for example, as a member for removing static electricity, or a dielectric layer of an electrostatic chuck. Since dispersions of volume inherent resistivity values are very small, a material having a volume inherent resistivity value within a certain range can be produced with good reproducibility. Accordingly, the yield is high, and the productivity is very good.

    摘要翻译： 本发明的半绝缘氮化铝烧结体由氮化铝颗粒构成，分散在氮化铝颗粒之间的体积固有电阻率值不大于102欧姆·xcm的导电细颗粒和由氧化物形成的晶间相 含有选自Ti，Ce，Ni，Ta，Y，Er和Yb中的至少一种元素，或者来自Si。 该烧结体的体积固有电阻率值为104〜1011欧米伽xcm，例如作为除静电的部件或静电卡盘的电介质层是非常有用的。 由于体积固有电阻率值的分散度非常小，所以可以以良好的再现性产生体积固有电阻率值在一定范围内的材料。 因此，产率高，生产率非常好。

    Silicon nitride sintered body
    8.
    发明授权
    Silicon nitride sintered body 失效
    氮化硅烧结体

    公开(公告)号：US5919719A

    公开(公告)日：1999-07-06

    申请号：US141451

    申请日：1998-08-27

    申请人： Masahiro Sato ,  Katsushi Sakaue ,  Takero Fukudome

    发明人： Masahiro Sato ,  Katsushi Sakaue ,  Takero Fukudome

    IPC分类号： C04B35/584 ,  C04B35/587

    CPC分类号： C04B35/584

    摘要： A silicon nitride sintered body containing a .beta.-silicon nitride crystal phase and further containing at least a rare earth element component and an aluminium component in a grain boundary phase, wherein the intensity ratio (X2/X1) of the Si peak X.sub.2 at 521 cm.sup.-1 to the Si.sub.3 N.sub.4 peak X.sub.1 at 206 cm.sup.-1, as detected by a Raman spectrochemical analysis method, is 0.2 to 3. A very minor amount of Si (elemental silicon), as detected by the Raman spectrochemical analysis method, is precipitated in the sintered body, and by this precipitation of Si, strength and toughness are markedly increased.

    摘要翻译： 一种含有β-硅氮化物晶相并且在晶界相中至少含有稀土元素成分和铝成分的氮化硅烧结体，其中，所述Si峰X2在521cm处的强度比（X2 / X1） -1，通过拉曼光谱化学分析法检测到206cm -1处的Si 3 N 4峰X1为0.2〜3。通过拉曼光谱化学分析法检测到的非常少量的Si（元素硅）沉淀在 烧结体和Si的沉淀，强度和韧性明显增加。

    Composition, sintered product of silicon nitride, article of manufacture, and cutting method
    9.
    发明授权
    Composition, sintered product of silicon nitride, article of manufacture, and cutting method 有权
    组成，氮化硅烧结产品，制造和切割方法

    公开(公告)号：US07749932B2

    公开(公告)日：2010-07-06

    申请号：US12071502

    申请日：2008-02-21

    申请人： Takero Fukudome ,  Shuichi Tateno ,  Hiroshi Yoshimitsu ,  Takashi Watanabe ,  Tatsuyuki Nakaoka

    发明人： Takero Fukudome ,  Shuichi Tateno ,  Hiroshi Yoshimitsu ,  Takashi Watanabe ,  Tatsuyuki Nakaoka

    IPC分类号： C04B35/587

    CPC分类号： C04B35/584 ,  Y10T428/252

    摘要： A sintered product of silicon nitride includes a crystal phase mainly having silicon nitride crystal grains and an amorphous grain-boundary phase located on the grain boundaries of the silicon nitride crystal grains. The grain-boundary phase contains lanthanum, aluminum, magnesium, silicon, and oxygen. The sintered product described above contains 0.1% by mass or more of lanthanum on an oxide basis, 0.05 to 0.6% by mass of aluminum on an oxide basis, 0.3% by mass or more of magnesium on an oxide basis, and 2.5% by mass or less of oxygen. The total amount of lanthanum on an oxide basis, aluminum on an oxide basis, and magnesium on an oxide basis is 3.5% by mass or less.

    摘要翻译： 氮化硅的烧结体包括主要具有氮化硅晶粒的晶相和位于氮化硅晶粒的晶界上的无定形晶界相。 晶界相包含镧，铝，镁，硅和氧。 上述烧结体含有0.1质量％以上的氧化镧，0.05〜0.6质量％的氧化铝，0.3质量％以上的氧化镁，2.5质量％ 以下的氧气。 以氧化物为基准的镧的总量，以氧化物为基准的铝和氧化物的镁为3.5质量％以下。

    Composition, sintered product of silicon nitride, article of manufacture, and cutting method
    10.
    发明申请
    Composition, sintered product of silicon nitride, article of manufacture, and cutting method 有权
    组成，氮化硅烧结产品，制造和切割方法

    公开(公告)号：US20080220243A1

    公开(公告)日：2008-09-11

    申请号：US12071502

    申请日：2008-02-21

    申请人： Takero Fukudome ,  Shuichi Tateno ,  Hiroshi Yoshimitsu ,  Takashi Watanabe ,  Tatsuyuki Nakaoka

    发明人： Takero Fukudome ,  Shuichi Tateno ,  Hiroshi Yoshimitsu ,  Takashi Watanabe ,  Tatsuyuki Nakaoka

    IPC分类号： C04B35/584 ,  B32B18/00

    CPC分类号： C04B35/584 ,  Y10T428/252

    摘要： A sintered product of silicon nitride includes a crystal phase mainly having silicon nitride crystal grains and an amorphous grain-boundary phase located on the grain boundaries of the silicon nitride crystal grains. The grain-boundary phase contains lanthanum, aluminum, magnesium, silicon, and oxygen. The sintered product described above contains 0.1% by mass or more of lanthanum on an oxide basis, 0.05 to 0.6% by mass of aluminum on an oxide basis, 0.3% by mass or more of magnesium on an oxide basis, and 2.5% by mass or less of oxygen. The total amount of lanthanum on an oxide basis, aluminum on an oxide basis, and magnesium on an oxide basis is 3.5% by mass or less.

    摘要翻译： 氮化硅的烧结体包括主要具有氮化硅晶粒的晶相和位于氮化硅晶粒的晶界上的无定形晶界相。 晶界相包含镧，铝，镁，硅和氧。 上述烧结体含有0.1质量％以上的氧化镧，0.05〜0.6质量％的氧化铝，0.3质量％以上的氧化镁，2.5质量％ 以下的氧气。 以氧化物为基准的镧的总量，以氧化物为基准的铝和氧化物的镁为3.5质量％以下。