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1.发明授权公开(公告)号：US06962767B2
公开(公告)日：2005-11-08
申请号：US10315069
申请日：2002-12-10
申请人： Takeru Watanabe , Takeshi Kinsho , Koji Hasegawa , Tsunehiro Nishi , Mutsuo Nakashima , Seiichiro Tachibana , Jun Hatakeyama
发明人： Takeru Watanabe , Takeshi Kinsho , Koji Hasegawa , Tsunehiro Nishi , Mutsuo Nakashima , Seiichiro Tachibana , Jun Hatakeyama
IPC分类号： G03F7/039 , C07D317/12 , C07D317/20 , C07D317/24 , C07D319/06 , C08F32/00 , C08F220/10 , C08F222/06 , C08F222/10 , C08G61/02 , C08G61/08 , G03C5/00
CPC分类号： C08G61/08 , C08G61/02 , Y10S430/106 , Y10S430/111
摘要： Acetal compounds in which a 5- or 6-membered ring acetal structure is connected to a norbornene structure through a linker represented by —(CH2)m— in which one hydrogen atom may be substituted with a hydroxyl or acetoxy group, and m is from 1 to 8 are novel. Using the acetal compounds as a monomer, polymers are obtained. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.
摘要翻译： 其中5或6元环缩醛结构通过 - （CH 2 CH 2）m - 表示的连接体与降冰片烯结构连接的缩醛化合物，其中一个氢 原子可以被羟基或乙酰氧基取代，m为1至8的是新的。 使用缩醛化合物作为单体，得到聚合物。 包含作为基础树脂的聚合物的抗蚀剂组合物对高能辐射敏感，并且具有优异的灵敏度，分辨率和耐蚀刻性。
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公开(公告)号：US06780563B2
公开(公告)日：2004-08-24
申请号：US09963465
申请日：2001-09-27
申请人： Koji Hasegawa , Takeshi Kinsho , Takeru Watanabe , Mutsuo Nakashima , Seiichiro Tachibana , Tsunehiro Nishi , Jun Hatakeyama
发明人： Koji Hasegawa , Takeshi Kinsho , Takeru Watanabe , Mutsuo Nakashima , Seiichiro Tachibana , Tsunehiro Nishi , Jun Hatakeyama
IPC分类号： G03F7039
CPC分类号： G03F7/0758 , G03F7/0045
摘要： A polymer bearing specific silicon-containing groups is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity and resolution at a wavelength of less than 300 nm, and high resistance to oxygen plasma etching. The resist composition lends itself to micropatterning for the fabrication of VLSIs.
摘要翻译： 具有特定含硅基团的聚合物是新颖的。 包含作为基础树脂的聚合物的抗蚀剂组合物对高能辐射敏感，并且在小于300nm的波长下具有优异的灵敏度和分辨率，以及高耐氧等离子体蚀刻性。 抗蚀剂组合物本身可用于制造VLSI的微图案。
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3.发明授权公开(公告)号：US06670498B2
公开(公告)日：2003-12-30
申请号：US10288514
申请日：2002-11-06
申请人： Tsunehiro Nishi , Koji Hasegawa , Takeru Watanabe , Takeshi Kinsho , Mutsuo Nakashima , Seiichiro Tachibana , Jun Hatakeyama
发明人： Tsunehiro Nishi , Koji Hasegawa , Takeru Watanabe , Takeshi Kinsho , Mutsuo Nakashima , Seiichiro Tachibana , Jun Hatakeyama
IPC分类号： C07C6974
CPC分类号： G03F7/039 , C07C69/716 , C08G61/08 , G03F7/0045
摘要： An ester compound of the following formula (1) is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is C1-C15 alkyl, R4 is branched or cyclic, tertiary C5-C20 alkyl group, Z is a divalent C1-C10 hydrocarbon group, and k is 0 or 1. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and is suited for micropatterning using electron beams or deep-UV.
摘要翻译： 提供下式（1）的酯化合物：R 1是H，甲基或CH 2 CO 2 R 3，R 2是H，甲基或CO 2 R 3，R 3是C 1 -C 15烷基 R 4是支链或环状的，叔C5-C20烷基，Z是二价C1-C10烃基，k是0或1.含有由酯化合物得到的聚合物作为基础树脂的抗蚀剂组合物是 对高能辐射敏感，具有优异的灵敏度，分辨率和耐蚀刻性，适用于使用电子束或深UV的微图案。
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公开(公告)号：US06660448B2
公开(公告)日：2003-12-09
申请号：US09986274
申请日：2001-11-08
申请人： Seiichiro Tachibana , Mutsuo Nakashima , Tsunehiro Nishi , Takeshi Kinsho , Koji Hasegawa , Takeru Watanabe , Jun Hatakeyama
发明人： Seiichiro Tachibana , Mutsuo Nakashima , Tsunehiro Nishi , Takeshi Kinsho , Koji Hasegawa , Takeru Watanabe , Jun Hatakeyama
IPC分类号： C08F2400
CPC分类号： C08F222/06 , C08F232/08 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： The invention provides a polymer comprising recurring units containing bridged aliphatic rings in the backbone and having a hydroxyl, acyloxy or alkoxylcarbonyloxy group as well as a lactone structure bonded through a spacer, the polymer having a weight average molecular weight of 1,000-500,000. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV.
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5.发明授权公开(公告)号：US06500961B2
公开(公告)日：2002-12-31
申请号：US09867656
申请日：2001-05-31
申请人： Takeshi Kinsho , Koji Hasegawa , Takeru Watanabe , Tsunehiro Nishi , Mutsuo Nakashima , Seiichiro Tachibana , Jun Hatakeyama
发明人： Takeshi Kinsho , Koji Hasegawa , Takeru Watanabe , Tsunehiro Nishi , Mutsuo Nakashima , Seiichiro Tachibana , Jun Hatakeyama
IPC分类号： C07D30720
CPC分类号： C07D307/33 , G03F7/0395
摘要： Lactone compounds of formula (1) are useful as monomers to form base resins for use in chemically amplified resist compositions adapted for micropatterning lithography. R1 is H or C1-6 alkyl, R2 is H or an acyl or alkoxycarbonyl group of 1-15 carbon atoms which may be substituted with halogen atoms, Z is a divalent C1-15 organic group which forms a lactone ring with the carbonyloxy group, k is 0 or 1, and m is an integer from 0 to 5.
摘要翻译： 式（1）的内酯化合物可用作单体以形成适用于微图案光刻的化学放大抗蚀剂组合物的基础树脂.R1为H或C1-6烷基，R2为H或1-15碳的酰基或烷氧基羰基 可以被卤素原子取代的原子，Z是与羰基氧基形成内酯环的二价C1-15有机基团，k为0或1，m为0-5的整数。
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6.发明授权公开(公告)号：US06472543B2
公开(公告)日：2002-10-29
申请号：US09897985
申请日：2001-07-05
申请人： Takeshi Kinsho , Takeru Watanabe , Koji Hasegawa , Tsunehiro Nishi , Mutsuo Nakashima , Seiichiro Tachibana , Jun Hatakeyama
发明人： Takeshi Kinsho , Takeru Watanabe , Koji Hasegawa , Tsunehiro Nishi , Mutsuo Nakashima , Seiichiro Tachibana , Jun Hatakeyama
IPC分类号： C07D40700
CPC分类号： C07D315/00 , G03F7/0395
摘要： Lactone compounds of formula (1) are novel and useful as monomers to form base resins for use in chemically amplified resist compositions adapted for micropatterning lithography. Letter k is 0 or 1 and m is an integer of 1-8.
摘要翻译： 式（1）的内酯化合物是新颖的并且可用作单体以形成适用于微图案光刻的化学放大抗蚀剂组合物的基础树脂。引发剂k为0或1，m为1-8的整数。
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7.发明授权公开(公告)号：US06403823B2
公开(公告)日：2002-06-11
申请号：US09842006
申请日：2001-04-26
申请人： Koji Hasegawa , Takeru Watanabe , Takeshi Kinsho , Mutsuo Nakashima , Seiichiro Tachibana , Tsunehiro Nishi , Jun Hatakeyama
发明人： Koji Hasegawa , Takeru Watanabe , Takeshi Kinsho , Mutsuo Nakashima , Seiichiro Tachibana , Tsunehiro Nishi , Jun Hatakeyama
IPC分类号： C07C6974
CPC分类号： G03F7/039 , C07C67/343 , C07C69/732
摘要： Ester compounds of formula (1) are useful as monomers to form base resins for use in chemically amplified resist compositions adapted for micropatterning lithography. R1 is H or C1-6 alkyl, R2 is an unsubstituted or halo-substituted acyl or alkoxycarbonyl group of 1-15 carbon atoms, R3 is an acid labile group, k is 0 or 1, and m is an integer from 0 to 5.
摘要翻译： 式（1）的酯化合物可用作单体以形成适用于微图案光刻的化学放大抗蚀剂组合物的基础树脂.R1是H或C1-6烷基，R2是未取代的或卤素取代的酰基或烷氧基羰基， -15个碳原子，R3是酸不稳定基团，k是0或1，m是0-5的整数。
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8.发明授权Antireflective coating composition, antireflective coating, and patterning process 有权抗反射涂料组合物，抗反射涂层和图案化工艺公开(公告)号：US08313890B2
公开(公告)日：2012-11-20
申请号：US12636546
申请日：2009-12-11
CPC分类号： G03F7/091 , C09D133/16 , C08L2666/02
摘要： A composition comprising (A) a fluorinated polymer having k=0.01-0.4 and n=1.4-2.1 and (B) an aromatic ring-bearing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate.
摘要翻译： 包含（A）具有k = 0.01-0.4和n = 1.4-2.1的氟化聚合物和（B）具有k = 0.3-1.2的含芳环的聚合物的组合物用于形成抗反射涂层。 ARC形成组合物可以通过与现有技术ARC相同的方法沉积。 所得到的ARC有效地防止曝光光在光刻中的反射并且具有可接受的干蚀刻速率。
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公开(公告)号：US08062828B2
公开(公告)日：2011-11-22
申请号：US12370652
申请日：2009-02-13
申请人： Youichi Ohsawa , Takeshi Kinsho , Masaki Ohashi , Seiichiro Tachibana , Takeru Watanabe , Jun Hatakeyama
发明人： Youichi Ohsawa , Takeshi Kinsho , Masaki Ohashi , Seiichiro Tachibana , Takeru Watanabe , Jun Hatakeyama
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111 , Y10S430/143
摘要： A positive resist composition comprises a polymer comprising recurring units having a sulfonium salt incorporated therein as a base resin which becomes soluble in alkaline developer under the action of acid. The polymer generates a strong sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition.
摘要翻译： 正型抗蚀剂组合物包含含有其中掺入其中的锍盐作为基础树脂的重复单元的聚合物，其在酸的作用下变得可溶于碱性显影剂。 聚合物在暴露于高能量辐射时产生强烈的磺酸，以促进抗蚀剂组合物中酸不稳定基团的有效断裂。
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10.发明授权Polymerizable fluorinated ester, manufacturing method, polymer, photoresist composition and patterning process 有权可聚合氟化酯，制造方法，聚合物，光致抗蚀剂组合物和图案化工艺公开(公告)号：US07202318B2
公开(公告)日：2007-04-10
申请号：US11175346
申请日：2005-07-07
IPC分类号： C08F12/20
CPC分类号： C08F114/18 , C07C69/653 , C07C2601/14 , G03F7/0046 , G03F7/0392 , G03F7/0397
摘要： Polymerizable fluorinated ester compounds having formula (1) or (2) are novel wherein R1 is H, methyl or trifluoromethyl, R2 is a divalent hydrocarbon group, R3 is H or a monovalent hydrocarbon group, or R2 and R3, taken together, may form a ring, R4 is H, OH or a monovalent hydrocarbon group, and R5 is an acid labile group. They are most useful as monomers to produce polymers for the manufacture of radiation-sensitive resist compositions
摘要翻译： 具有式（1）或（2）的可聚合氟化酯化合物是新的，其中R 1是H，甲基或三氟甲基，R 2是二价烃基，R SUP > 3是H或一价烃基，或R 2和R 3一起可以形成环，R 4， SUP>是H，OH或一价烃基，R 5是酸不稳定基团。 它们作为制备用于制造辐射敏感抗蚀剂组合物的聚合物的单体最有用
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