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    Method for producing thin film magnetic head having magnetoresistive effect element
    2.
    发明授权
    Method for producing thin film magnetic head having magnetoresistive effect element 失效
    具有磁阻效应元件的薄膜磁头的制造方法

    公开(公告)号：US08182705B2

    公开(公告)日：2012-05-22

    申请号：US12609616

    申请日：2009-10-30

    申请人： Kosuke Tanaka ,  Daisuke Miyauchi ,  Takumi Yanagisawa

    发明人： Kosuke Tanaka ,  Daisuke Miyauchi ,  Takumi Yanagisawa

    IPC分类号： B44C1/22

    CPC分类号： G11B5/3196 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3169 ,  G11B5/3909 ,  G11B5/3967 ,  G11B5/455 ,  G11B2005/3996

    摘要： A method for producing a thin film magnetic head including a magnetoresistive effect element (MR element) that has a magnetic sensor multi-layered film with a polygonal shape such that a vertex angle faces an air bearing surface (ABS) and a tip of the vertex angle is cut when the magnetic sensor multi-layered film is viewed from an X-Y plane that is parallel to a plane of a lower shield electrode layer includes a step for stopping a lapping process by using a measurement point in which a resistance value is steeply increased while the lapping face is gradually approaching the vertex angle of polygonal shape by lapping from the ABS side. Therefore, an excellent effect in which an ultra narrow track width that exceeds limits of photolithography technology can be securely and constantly formed is obtained.

    摘要翻译： 一种具有磁阻效应元件（MR元件）的薄膜磁头的制造方法，该磁阻效应元件（MR元件）具有多角形状的磁性传感器多层膜，使得顶角面向空气轴承面（ABS）和顶点 当从平行于下屏蔽电极层的平面的XY平面观察磁传感器多层膜时，切割角度包括通过使用电阻值急剧增加的测量点来停止研磨处理的步骤 而研磨面通过从ABS侧研磨而逐渐接近多角形的顶角。 因此，可以可靠且持续地形成超光栅技术的超窄轨迹宽度的优异效果。

    Thin-film magnetic head comprising magneto-resistive effect device, and hard disk system
    3.
    发明授权
    Thin-film magnetic head comprising magneto-resistive effect device, and hard disk system 有权
    薄膜磁头包括磁阻效应器和硬盘系统

    公开(公告)号：US07808750B2

    公开(公告)日：2010-10-05

    申请号：US11831451

    申请日：2007-07-31

    申请人： Takumi Yanagisawa ,  Takayasu Kanaya

    发明人： Takumi Yanagisawa ,  Takayasu Kanaya

    IPC分类号： G11B5/39 ,  G11B5/127

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932

    摘要： The thin-film magnetic head of the invention comprises a magneto-resistive effect device including a multilayer film and a bias mechanism portion including a bias magnetic field-applying layer formed on each widthwise end of the multilayer film. When the magneto-resistive effective device including a multilayer film and the bias mechanism portion are viewed in plane on their own, the uppermost extremity of the rear end of the magneto-resistive effect device and the uppermost extremity of the rear end of the bias mechanism portion lie at substantially the same depth-wise position, and the rear slant of the bias mechanism portion is gentler in gradient than the rear slat of the magneto-resistive effect device. It is thus possible just only to facilitate the fabrication of the device but also to achieve several advantages of being a lower rate of occurrence of noise, higher reliability and higher yields.

    摘要翻译： 本发明的薄膜磁头包括具有多层膜的磁阻效应器件和包括在多层膜的每个宽度方向上形成的偏置磁场施加层的偏置机构部分。 当包括多层膜和偏置机构部分的磁阻有效装置自身在平面中被观察时，磁阻效应装置的后端的最上端和偏置机构的后端的最上端 部分位于基本上相同的深度位置，并且偏置机构部分的后斜面比磁阻效应装置的后板坡度更平缓。 因此，仅仅有利于装置的制造，而且可以实现噪声发生率较低，可靠性更高，产量更高的几个优点。

    Method for evaluating the deterioration of magneto-resistive effect device
    7.
    发明授权
    Method for evaluating the deterioration of magneto-resistive effect device 失效
    用于评估磁阻效应器件劣化的方法

    公开(公告)号：US07780344B2

    公开(公告)日：2010-08-24

    申请号：US11860811

    申请日：2007-09-25

    申请人： Takumi Yanagisawa ,  Naoki Ohta ,  Yosuke Antoku

    发明人： Takumi Yanagisawa ,  Naoki Ohta ,  Yosuke Antoku

    IPC分类号： G01N3/60 ,  G01N25/72

    CPC分类号： G01R31/2849 ,  B82Y25/00 ,  G01R31/311 ,  G01R33/093 ,  G01R33/098

    摘要： The estimation method of the invention for estimating the deteriorations of a magneto-resistive effect device by heat shocks involves applying heat shocks by laser irradiation to a structure including a thin-film magnetic head comprising a magneto-resistive effect device to propagate them to the magneto-resistive effect device, thereby causing the deteriorations of the magneto-resistive effect device. Thus, (1) the deterioration mode phenomenon of “local overheating plus vibration” can be imitated in a simple yet very approximate state so that a device likely to undergo characteristics deteriorations due to the thermal asperity problem can be detected early at an initial fabrication process stage, and (2) what specifications a head device structure less likely to offer the thermal asperity problem is in can be judged at a product development stage.

    摘要翻译： 用于通过热冲击来估计磁阻效应器件的劣化的本发明的估计方法包括通过激光照射对包括由磁阻效应器件构成的薄膜磁头的结构进行热冲击以将它们传播到磁 电阻效应器件，从而导致磁阻效应器件的劣化。 因此，（1）“局部过热加振动”的劣化模式现象可以在简单但非常近似的状态下被模仿，从而可以在初始制造过程中早期检测到由于热不均匀性问题而容易发生特性劣化的装置 阶段，（2）可以在产品开发阶段判断头部器件结构不太可能提供热凹凸问题的规格。

    METHOD FOR EVALUATING THE DETERIORATION OF MAGNETO-RESISTIVE EFFECT DEVICE
    8.
    发明申请
    METHOD FOR EVALUATING THE DETERIORATION OF MAGNETO-RESISTIVE EFFECT DEVICE 失效
    评估电磁效应器件检测方法

    公开(公告)号：US20090080491A1

    公开(公告)日：2009-03-26

    申请号：US11860811

    申请日：2007-09-25

    申请人： Takumi Yanagisawa ,  Naoki Ohta ,  Yosuke Antoku

    发明人： Takumi Yanagisawa ,  Naoki Ohta ,  Yosuke Antoku

    IPC分类号： G01N25/72

    CPC分类号： G01R31/2849 ,  B82Y25/00 ,  G01R31/311 ,  G01R33/093 ,  G01R33/098

    摘要： The estimation method of the invention for estimating the deteriorations of a magneto-resistive effect device by heat shocks involves applying heat shocks by laser irradiation to a structure including a thin-film magnetic head comprising a magneto-resistive effect device to propagate them to the magneto-resistive effect device, thereby causing the deteriorations of the magneto-resistive effect device. Thus, (1) the deterioration mode phenomenon of “local overheating plus vibration” can be imitated in a simple yet very approximate state so that a device likely to undergo characteristics deteriorations due to the thermal asperity problem can be detected early at an initial fabrication process stage, and (2) what specifications a head device structure less likely to offer the thermal asperity problem is in can be judged at a product development stage.

    摘要翻译： 用于通过热冲击来估计磁阻效应器件的劣化的本发明的估计方法包括通过激光照射对包括由磁阻效应器件构成的薄膜磁头的结构进行热冲击以将它们传播到磁 电阻效应器件，从而导致磁阻效应器件的劣化。 因此，（1）“局部过热加振动”的劣化模式现象可以在简单但非常近似的状态下被模仿，从而可以在初始制造过程中早期检测到由于热不均匀性问题而容易发生特性劣化的装置 阶段，（2）可以在产品开发阶段判断头部器件结构不太可能提供热凹凸问题的规格。

    METHOD OF MANUFACTURING A MAGNETIC HEAD INCLUDING SHIELD LAYERS WHICH SURROUND A MR ELEMENT
    10.
    发明申请
    METHOD OF MANUFACTURING A MAGNETIC HEAD INCLUDING SHIELD LAYERS WHICH SURROUND A MR ELEMENT 有权
    制造磁头的方法，其中包括围绕MR元件的屏蔽层

    公开(公告)号：US20120240390A1

    公开(公告)日：2012-09-27

    申请号：US13052674

    申请日：2011-03-21

    申请人： Naomichi Degawa ,  Takumi Yanagisawa ,  Satoshi Miura ,  Yoshikazu Sawada ,  Takahiko Machita ,  Kenzo Makino ,  Takekazu Yamane ,  Shohei Kawasaki

    发明人： Naomichi Degawa ,  Takumi Yanagisawa ,  Satoshi Miura ,  Yoshikazu Sawada ,  Takahiko Machita ,  Kenzo Makino ,  Takekazu Yamane ,  Shohei Kawasaki

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3912 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/398 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： A method of manufacturing a magnetic head that includes a magneto resistance effect (MR) element of which an electrical resistance changes according to an external magnetic field and shield layers surrounding the MR element, and that reads information of a magnetic recording medium is provided. The manufacturing method includes: a first step of forming a multilayer film including a plurality of layers configuring the MR element on a first shield layer; a second step of removing unnecessary portions of the multilayer film positioned on both sides so as to configure the MR element; a third step of forming an insulating layer on a surface exposed by removing the unnecessary portions; a fourth step of forming a soft magnetic layer covering the MR element in an integrated manner at once on both sides of the MR element and on the MR element so as to configure a second shield layer including the soft magnetic layer; and a fifth step of forming an anisotropy application layer on the second shield layer, the anisotropy application layer providing exchange anisotropy to the soft magnetic layer so as to magnetize the soft magnetic layer in a predetermined direction.

    摘要翻译： 提供一种制造磁头的方法，该磁头包括根据外部磁场电阻变化的磁阻效应（MR）元件和围绕MR元件的屏蔽层，并且读取磁记录介质的信息。 该制造方法包括：第一步骤，在第一屏蔽层上形成包括构成MR元件的多个层的多层膜; 去除位于两侧的多层膜的不需要部分以构成MR元件的第二步骤; 第三步骤，通过去除不需要的部分在暴露的表面上形成绝缘层; 在MR元件和MR元件的两侧上一体地形成覆盖MR元件的软磁性层的第四步骤，以构成包括该软磁性层的第二屏蔽层; 以及在所述第二屏蔽层上形成各向异性施加层的第五步骤，所述各向异性施加层向所述软磁性层提供交换各向异性，以沿预定方向磁化所述软磁性层。