摘要:
An electro-optical device includes, above a substrate, data lines extending in a first direction, scanning lines which extend in a second direction and which cross the data lines, pixel electrodes and thin film transistors disposed so as to correspond to regions in which the data lines and the scanning lines cross, storage capacitors electrically connected to the thin film transistors and the pixel electrodes, and a shield layer disposed between the data lines and the pixel electrodes. An upper electrode and a lower electrode between which a dielectric film forming each storage capacitor is supported including a first portion laminated along a plane parallel with one surface of the substrate and a second portion laminated along a plane orthogonal to the surface of the substrate, the sectional shape of the capacitor including a projecting shape.
摘要:
The invention provides a substrate device having thin film transistors (TFTs), each including a semiconductor layer and capacitors formed above the TFTs, that are provided on a substrate. Each of the capacitors can include a first electrode electrically connected to a part of the semiconductor layer, a second electrode arranged to face the first electrode, and a dielectric film including a nitride film arranged between the first electrode and the second electrode on the substrate. Further, the nitride film has an aperture facing the semiconductor layer as seen in plan view. Accordingly, it is possible to effectively hydrogenate the semiconductor layer using the aperture.
摘要:
An electro-optical device in which a plurality of thin films are laminated on a substrate and a transistor is formed by a part of the plurality of laminated thin films includes a light-shielding insulating layer that forms a part of the plurality of thin films and is laminated on the substrate so as to cover at least a part of a semiconductor layer of the transistor in plan view.
摘要:
An electro-optical device comprises: a first data line extending in a first direction; a second data line extending in the first direction and arranged so as to be at least partially overlapped with the first data line; a first scanning line and a second scanning line extending in a second direction intersecting the first direction; a first transistor electrically connected to the first data line and electrically connected to the first scanning line; a first pixel electrode electrically connected to the first transistor; a second transistor electrically connected to the second data line and electrically connected to the second scanning line; and a second pixel electrode electrically connected to the second transistor.
摘要:
An electro-optical device in which a plurality of thin films are laminated on a substrate and a transistor is formed by a part of the plurality of laminated thin films includes a light-shielding insulating layer that forms a part of the plurality of thin films and is laminated on the substrate so as to cover at least a part of a semiconductor layer of the transistor in plan view.
摘要:
There is provided an electro-optical device comprising, above a substrate, a first conductor layer, a second conductor layer, an interlayer insulating film formed between the first conductor layer and the second conductor layer, and a contact hole, provided in the interlayer insulating film, for electrically connecting the first conductor layer and the second conductor layer in a contact portion. The first conductor layer has a multilayered structure in which an electrolytic corrosion preventing film is provided on a conductor film, in a region including at least the contact portion among the entire region thereof, and the electrolytic corrosion preventing film is not provided in other regions thereof. Thus, an electrolytic corrosion can be prevented and a contact resistance can be reduced. Further, heat can be prevented from generating.
摘要:
An electro-optical device includes, above a substrate: data lines extending in a first direction; scanning lines extending in a second direction and intersecting the data lines; pixel electrodes and thin film transistors disposed so as to correspond to intersection regions of the data lines and the scanning lines; storage capacitors electrically connected to the thin film transistors and the pixel electrodes; and shielding layers disposed between the data lines and the pixel electrodes. Further, nitride films are included in the shielding layers and are formed along the data lines and are wider than the data lines.
摘要:
An electro-optical device includes a first light shielding film; a transistor element formed on the first light shielding film to overlap the first light shielding film; a second light shielding film formed on the transistor element to overlap the transistor element and electrically connected to an input terminal of the transistor element; a transparent conductive film extended toward an upper layer side of the second light shielding film in an opening region, through which light penetrates, of the display region; a dielectric film formed on the transparent conductive film in the opening region; and a transparent pixel electrode formed on the dielectric film in the opening region, constituting a storage capacitor together with the transparent conductive film and the dielectric film, and having a transparent pixel electrode which is electrically connected to the transistor element.
摘要:
A capacitor element includes a lower conductive portion, an underlying film which covers the lower conductive portion, a lower electrode formed on the underling film, a capacitor insulating film including (i) a dielectric film formed on the lower electrode and (ii) a protective film formed on the dielectric film and having a lower etching rate than that of the dielectric film, and an upper electrode formed on the capacitor insulating film. The upper electrode and the lower conductive portion are electrically connected to each other through a connection portion exposed from the underlying film by partially removing the underlying film and the capacitor insulating film.
摘要:
An electro-optical device includes: data lines extending in a first direction on a substrate; scanning lines extending in a second direction and intersecting with the data lines; pixel electrodes and thin film transistors disposed corresponding to intersections of the data lines and the scanning lines; storage capacitors electrically connected to the thin film transistors and the pixel electrodes; and a shielding layer disposed between the data lines and the pixel electrodes. One of a pair of electrodes forming the storage capacitor is formed of a multi-layered film containing a low resistance film.