公开(公告)号：US06670638B2

公开(公告)日：2003-12-30

申请号：US09793972

申请日：2001-02-28

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Hironaru Yamaguchi ,  Yoshinobu Kimura ,  Makoto Ohkura ,  Hironobu Abe ,  Shigeo Shimomura ,  Masakazu Saitou ,  Michiko Takahashi

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Hironaru Yamaguchi ,  Yoshinobu Kimura ,  Makoto Ohkura ,  Hironobu Abe ,  Shigeo Shimomura ,  Masakazu Saitou ,  Michiko Takahashi

IPC分类号： H01L2904

CPC分类号： H01L29/66757 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/104 ,  H01L29/78675

摘要： Disclosed is a polysilicon film adapted for use in a liquid crystal display, and method of manufacturing such film. In manufacturing the film, a native oxide layer formed on a surface of an amorphous silicon film is completely removed by a hydrofluoric acid solution, followed by immersing in an H2O2 solution to newly form an extremely thin oxide layer, prior to a crystallizing processing performed by a laser beam irradiation. The crystallizing processing forms a polysilicon film formed of crystal grains Preferentially oriented on the (111) plane in a direction parallel to the substrate surface, an average crystal grain size being not larger than 300 nm, the standard deviation of the grain sizes being not larger than 30% of the average grain size, and the standard deviation of the roughness being not larger than 10% of the average grain size.

摘要翻译： 公开了适用于液晶显示器的多晶硅膜及其制造方法。 在制造膜时，通过氢氟酸溶液将形成在非晶硅膜表面上的天然氧化物层完全除去，随后在H 2 O 2溶液中浸渍以形成极薄的氧化物层，然后在结晶处理之前进行 激光束照射。 结晶处理形成由晶粒形成的多晶硅膜，在（111）面上沿着平行于基板表面的方向优先取向，平均晶粒尺寸不大于300nm，晶粒尺寸的标准偏差不大 超过平均粒径的30％，粗糙度的标准偏差不大于平均粒径的10％。

公开(公告)号：US20050202612A1

公开(公告)日：2005-09-15

申请号：US11123496

申请日：2005-05-04

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/66757 ,  H01L29/78675 ,  Y10S438/969

摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

摘要翻译： 激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中 晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

公开(公告)号：US06903371B2

公开(公告)日：2005-06-07

申请号：US10773950

申请日：2004-02-06

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L29/66757 ,  H01L29/78675 ,  Y10S438/969

摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

摘要翻译： 激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中 晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

公开(公告)号：US06657227B2

公开(公告)日：2003-12-02

申请号：US09910314

申请日：2001-07-19

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

IPC分类号： H01L2904

CPC分类号： H01L29/66757 ,  H01L29/78675 ,  Y10S438/969

摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

摘要翻译： 激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中 晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有200cm 2 / Vs以上的高电子迁移率。

公开(公告)号：US07227186B2

公开(公告)日：2007-06-05

申请号：US11123496

申请日：2005-05-04

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

IPC分类号： H01L21/20

CPC分类号： H01L29/66757 ,  H01L29/78675 ,  Y10S438/969

摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

摘要翻译： 激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中 晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

公开(公告)号：US06716688B2

公开(公告)日：2004-04-06

申请号：US10299218

申请日：2002-11-18

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

IPC分类号： H01L2184

CPC分类号： H01L29/66757 ,  H01L29/78675 ,  Y10S438/969

摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

摘要翻译： 激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中 晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有200cm 2 / Vs以上的高电子迁移率。

公开(公告)号：US08182610B2

公开(公告)日：2012-05-22

申请号：US12551821

申请日：2009-09-01

申请人： Yoichi Takahara ,  Fumio Kataoka ,  Kenji Yumiba ,  Kenji Katagiri ,  Ryo Izaki

发明人： Yoichi Takahara ,  Fumio Kataoka ,  Kenji Yumiba ,  Kenji Katagiri ,  Ryo Izaki

IPC分类号： B08B5/04

CPC分类号： H01L21/67028

摘要： Equipment is realized which is capable of increasing the frequency of use of a deposition mask of an organic EL element and the recycle of an adhesive agent by efficiently cleaning the deposition mask with little damage and efficiently collecting the adhesive agent. A pulse laser is irradiated to a deposition mask to separate the deposition agent from the deposition mask. The separated deposition agent is sucked by a suction nozzle, and the deposition agent is separated from air by a cyclone and deposited on a bottom of the cyclone. Thereafter, a first valve is opened to collect the deposition agent in a deposition agent collection section. Then a second valve is opened to move the deposition agent to a deposition agent refining section to be refined. A third valve is opened to store the refined deposition agent in a deposition agent storage section. The deposition mask may be cleaned without being damaged to collect the deposition agent with high efficiency.

摘要翻译： 实现了能够通过有效地清洁沉积掩模并且有效地收集粘合剂来增加有机EL元件的沉积掩模的使用频率和粘合剂的再循环的设备。 将脉冲激光照射到沉积掩模以将沉积剂与沉积掩模分离。 分离的沉积剂通过吸嘴吸入，并且沉积剂通过旋风分离器与空气分离并沉积在旋风分离器的底部。 此后，打开第一阀门以将沉积剂收集在沉积剂收集部分中。 然后打开第二个阀，以将沉积剂移动到要精炼的沉积剂精炼部分。 第三阀被打开以将精制的沉积剂存储在沉积剂储存部分中。 可以清洁沉积掩模而不损坏以高效率收集沉积剂。

公开(公告)号：US07435302B2

公开(公告)日：2008-10-14

申请号：US10914219

申请日：2004-08-10

申请人： Yoichi Takahara ,  Masahiro Yamada ,  Noriyuki Ohroku ,  Shoji Asaka ,  Tomoaki Takahashi ,  Hiroshi Kawanago ,  Hideaki Yamamoto

发明人： Yoichi Takahara ,  Masahiro Yamada ,  Noriyuki Ohroku ,  Shoji Asaka ,  Tomoaki Takahashi ,  Hiroshi Kawanago ,  Hideaki Yamamoto

IPC分类号： B08B1/00

CPC分类号： C03C23/0075 ,  B08B1/04 ,  C11D11/0047 ,  G02F2001/1316 ,  Y10S134/902

摘要： A cleaning apparatus according to the present invention is provided with a brush drive mechanism which brings a brush being rotating closer to a substrate, measures electrical potentials generated on a plurality of conductor patterns formed on the substrate, by a contact and separation with/from tips of scrub materials of the brush being rotating, and controls a positioning of the brush by use of the measurement results. With the process as described above, it is possible to treat uniformly a surface to-be-cleaned for a large-sized substrate, with the cleaning brush. Consequently, it is possible to form a highly qualified transistor for liquid crystal display on the substrate having been cleaned, with enhancing yield.

摘要翻译： 根据本发明的清洁装置设置有刷驱动机构，其使刷子更靠近基板旋转，测量在形成在基板上的多个导体图案上产生的电位，通过接触和从尖端分离 刷子的擦洗材料被旋转，并且通过使用测量结果来控制刷子的定位。 利用如上所述的方法，可以用清洁刷来均匀地处理大尺寸基板的待清洁表面。 因此，可以在已经清洗的基板上形成用于液晶显示的高精度晶体管，从而提高产量。

公开(公告)号：US20050037628A1

公开(公告)日：2005-02-17

申请号：US10752571

申请日：2004-01-08

申请人： Toshiyuki Ohsawa ,  Yoichi Takahara ,  Toshiki Kaneko ,  Daisuke Sonoda

发明人： Toshiyuki Ohsawa ,  Yoichi Takahara ,  Toshiki Kaneko ,  Daisuke Sonoda

IPC分类号： G02F1/13 ,  B08B3/02 ,  B08B3/08 ,  G02F1/1333 ,  G09F9/00 ,  H01L21/00 ,  H01L21/306 ,  H01L21/311 ,  H01L21/336 ,  H01L51/00 ,  H01L51/40 ,  H01L51/50 ,  H05B33/02 ,  H05B33/10 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/67028 ,  H01L21/31111 ,  H01L29/66757 ,  H01L29/66765 ,  H01L51/0019

摘要： Where a thin film formed on a glass substrate is etched with a solution containing a fluoride, insoluble residues formed by the reaction of the solution with glass substrate components adhere to the back of the substrate to cause etching non-uniformity called roller marks. So, a solution is supplied directly to supporting member for supporting the glass substrate, or concentratedly to region where the substrate and the supporting member come into contact and from a position opposite to the transporting direction of the substrate, or to both the supporting members and regions where the substrate and the supporting members come into contact. This enables the roller marks to be kept from forming, consequently making it possible to improve display quality of display devices.

摘要翻译： 在玻璃基板上形成的薄膜用含有氟化物的溶液进行蚀刻的情况下，溶液与玻璃基板成分的反应形成的不溶性残留物粘附到基板的背面，引起称为辊痕的蚀刻不均匀性。 因此，将溶液直接供给到用于支撑玻璃基板的支撑构件，或者集中到基板和支撑构件接触的区域以及与基板的输送方向相反的位置，或者支撑构件和 基板和支撑构件接触的区域。 由此，可以防止辊痕形成，从而能够提高显示装置的显示质量。

公开(公告)号：US07119027B2

公开(公告)日：2006-10-10

申请号：US10752571

申请日：2004-01-08

申请人： Toshiyuki Ohsawa ,  Yoichi Takahara ,  Toshiki Kaneko ,  Daisuke Sonoda

发明人： Toshiyuki Ohsawa ,  Yoichi Takahara ,  Toshiki Kaneko ,  Daisuke Sonoda

IPC分类号： H01L21/465 ,  B08B1/02

CPC分类号： H01L21/67028 ,  H01L21/31111 ,  H01L29/66757 ,  H01L29/66765 ,  H01L51/0019

摘要： Where a thin film formed on a glass substrate is etched with a solution containing a fluoride, insoluble residues formed by the reaction of the solution with glass substrate components adhere to the back of the substrate to cause etching non-uniformity called roller marks. So, a solution is supplied directly to supporting members for supporting the glass substrate, or concentratedly to a region where the substrate and the supporting members come into contact and from a position opposite to the transporting direction of the substrate, or to both the supporting members and regions where the substrate and the supporting members come into contact. This enables the roller marks to be kept from forming, consequently making it possible to improve display quality of display devices.

摘要翻译： 在玻璃基板上形成的薄膜用含有氟化物的溶液进行蚀刻的情况下，溶液与玻璃基板成分的反应形成的不溶性残留物粘附到基板的背面，引起称为辊痕的蚀刻不均匀性。 因此，将溶液直接供给到用于支撑玻璃基板的支撑构件，或者集中到基板和支撑构件接触的区域以及与基板的输送方向相反的位置，或者支撑构件 以及基板和支撑构件接触的区域。 由此，可以防止辊痕形成，从而能够提高显示装置的显示质量。