公开(公告)号：US07202115B2

公开(公告)日：2007-04-10

申请号：US10745419

申请日：2003-12-22

申请人： Takuya Hirano ,  Takuya Watanabe

发明人： Takuya Hirano ,  Takuya Watanabe

IPC分类号： H01L21/00

CPC分类号： H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78675

摘要： On an insulating substrate, a first insulating buffer layer, a heat accumulating-light shielding layer having at least a silicon layer on the surface thereof, a second insulating buffer layer and a first silicon layer are laminated in the order recited from the bottom. The lamination structure of the heat accumulating-light shielding layer, second buffer layer and first silicon layer is patterned. A laser beam is applied the patterned first silicon layer to melt and crystallize the first silicon layer. A thin film transistor is formed by using the crystallized first silicon layer. A polysilicon thin film transistor of high performance and small leak current to be caused by light as well as a display device using such thin film transistors is provided.

摘要翻译： 在绝缘基板上，以从底部开始的顺序层叠第一绝缘缓冲层，其表面上至少具有硅层的蓄热光屏蔽层，第二绝缘缓冲层和第一硅层。 对蓄热光屏蔽层，第二缓冲层和第一硅层的叠层结构进行图案化。 对图案化的第一硅层施加激光束以熔化和结晶第一硅层。 通过使用结晶的第一硅层形成薄膜晶体管。 提供了由光引起的高性能和小的漏电流的多晶硅薄膜晶体管以及使用这种薄膜晶体管的显示装置。

公开(公告)号：US07394098B2

公开(公告)日：2008-07-01

申请号：US11710168

申请日：2007-02-23

申请人： Takuya Hirano ,  Takuya Watanabe

发明人： Takuya Hirano ,  Takuya Watanabe

IPC分类号： H01L29/04

CPC分类号： H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78675

摘要： On an insulating substrate, a first insulating buffer layer, a heat accumulating-light shielding layer having at least a silicon layer on the surface thereof, a second insulating buffer layer and a first silicon layer are laminated in the order recited from the bottom. The lamination structure of the heat accumulating-light shielding layer, second buffer layer and first silicon layer is patterned. A laser beam is applied the patterned first silicon layer to melt and crystallize the first silicon layer. A thin film transistor is formed by using the crystallized first silicon layer. A polysilicon thin film transistor of high performance and small leak current to be caused by light as well as a display device using such thin film transistors is provided.

摘要翻译： 在绝缘基板上，以从底部开始的顺序层叠第一绝缘缓冲层，其表面上至少具有硅层的蓄热光屏蔽层，第二绝缘缓冲层和第一硅层。 对蓄热光屏蔽层，第二缓冲层和第一硅层的叠层结构进行图案化。 对图案化的第一硅层施加激光束以熔化和结晶第一硅层。 通过使用结晶的第一硅层形成薄膜晶体管。 提供了由光引起的高性能和小的漏电流的多晶硅薄膜晶体管以及使用这种薄膜晶体管的显示装置。

公开(公告)号：US20070164287A1

公开(公告)日：2007-07-19

申请号：US11710168

申请日：2007-02-23

申请人： Takuya Hirano ,  Takuya Watanabe

发明人： Takuya Hirano ,  Takuya Watanabe

IPC分类号： H01L29/00

CPC分类号： H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78675

摘要： On an insulating substrate, a first insulating buffer layer, a heat accumulating-light shielding layer having at least a silicon layer on the surface thereof, a second insulating buffer layer and a first silicon layer are laminated in the order recited from the bottom. The lamination structure of the heat accumulating-light shielding layer, second buffer layer and first silicon layer is patterned. A laser beam is applied the patterned first silicon layer to melt and crystallize the first silicon layer. A thin film transistor is formed by using the crystallized first silicon layer. A polysilicon thin film transistor of high performance and small leak current to be caused by light as well as a display device using such thin film transistors is provided.

公开(公告)号：US20080283840A1

公开(公告)日：2008-11-20

申请号：US12029249

申请日：2008-02-11

申请人： Seiji Doi ,  Kazushige Hotta ,  Takuya Hirano ,  Kenichi Yanai

发明人： Seiji Doi ,  Kazushige Hotta ,  Takuya Hirano ,  Kenichi Yanai

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L27/1288 ,  G02F1/13454 ,  H01L27/1214 ,  H01L27/1237 ,  H01L27/127 ,  H01L29/42384

摘要： The present invention relates to a thin film transistor device formed on an insulating substrate of a liquid crystal display device and others, a method of manufacturing the same, and a liquid crystal display device. In structure, there are provided the steps of forming a negative photoresist film on a first insulating film for covering a first island-like semiconductor film, forming a resist mask that has an opening portion in an inner region with respect to a periphery of the first island-like semiconductor film by exposing/developing the negative photoresist film from a back surface side of a transparent substrate, etching the first insulating film in the opening portion of the resist mask, forming a second insulating film for covering the first insulating film and a conductive film thereon, and forming a first gate electrode and a second gate electrode by patterning the conductive film.

摘要翻译： 本发明涉及形成在液晶显示装置等的绝缘基板上的薄膜晶体管装置及其制造方法以及液晶显示装置。 在结构上，提供了在用于覆盖第一岛状半导体膜的第一绝缘膜上形成负性光致抗蚀剂膜的步骤，形成相对于第一岛状半导体膜的周边在内部区域具有开口部的抗蚀剂掩模 通过从透明基板的背面侧曝光/显影负性光致抗蚀剂膜，蚀刻抗蚀剂掩模的开口部分中的第一绝缘膜，形成用于覆盖第一绝缘膜的第二绝缘膜和 导电膜，并且通过图案化导电膜形成第一栅电极和第二栅电极。

公开(公告)号：US08414030B2

公开(公告)日：2013-04-09

申请号：US12588082

申请日：2009-10-02

申请人： Motoaki Hirano ,  Takuya Hirano

发明人： Motoaki Hirano ,  Takuya Hirano

IPC分类号： A63C3/12

CPC分类号： A63C3/12

摘要： The present invention provides a skate guard having an elongated body piece with a longitudinal channel for receiving a skate blade, and an end piece adapted to pivot relative to the body piece. The end piece, which is adapted to receive an end portion of a skate blade, may be pivotally and detachably secured in a closed position whereby a skate blade is held within the guard. In a preferred embodiment, a biased latch member is provided in the end piece to further secure a blade within the guard and to enable a user to install the guard by a step-in process. The end piece is preferably connected to the body piece though an adapter piece that enables the guard to be configured for a variety of skate lengths and shapes. The skate guard preferably includes lateral stabilizing ball and heel segments for added stability when walking and installing the guard.

摘要翻译： 本发明提供了一种滑冰防护装置，其具有细长的主体部件，其具有用于接收滑冰刀片的纵向通道，以及适于相对于主体部件枢转的端部件。 适于接收溜冰刀片的端部的端件可以枢转地和可拆卸地固定在关闭位置，由此溜冰刀片保持在护罩内。 在优选实施例中，偏置的闩锁构件设置在端部件中以进一步将刀片固定在保护罩内，并且使得使用者能够通过踏入过程来安装护罩。 端件优选地通过适配器件连接到车身件，使得防护件能够被配置成各种滑板长度和形状。 滑冰护板优选地包括侧向稳定球和跟部段，以便在步行和安装护罩时增加稳定性。

公开(公告)号：US20080185667A1

公开(公告)日：2008-08-07

申请号：US11663057

申请日：2004-09-17

申请人： Kenichi Yoshino ,  Akito Hara ,  Michiko Takei ,  Takuya Hirano

发明人： Kenichi Yoshino ,  Akito Hara ,  Michiko Takei ,  Takuya Hirano

IPC分类号： H01L29/786 ,  H01L21/28

CPC分类号： H01L27/1259 ,  H01L21/26513 ,  H01L21/28079 ,  H01L21/82385 ,  H01L21/84 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/7845 ,  H01L29/78675

摘要： An Mo film (6) is formed on a SiO2 film (5) by particularly using the film thickness and the deposition temperature (ambient temperature in a sputtering chamber) as the primary parameters and adjusting the film thickness to be within the range from 100 nm to 500 nm (more preferably 100 nm to 300 nm) and the deposition temperature to be within the range from 25° C. to 300° C., so as to control residual stress to have a predetermined value of 300 MPa or greater and to be oriented to increase the in-plane lattice constant. There can be thus provided a reliable CMOSTFT in which desired strain is easily and reliably imparted to polysilicon thin films (4a and 4b) to improve the mobility therein without adding an extra step of imparting the strain to the silicon thin film.

摘要翻译： 通过特别使用膜厚度和沉积温度（溅射室中的环境温度）作为主要参数，在SiO 2膜（5）上形成Mo膜（6）并调节膜厚度 为100nm〜500nm（更优选为100nm〜300nm），淀积温度为25℃〜300℃的范围，从而将残留应力控制为具有规定的 值为300MPa以上，并且取向为增加面内晶格常数。 因此可以提供可靠的CMOSTFT，其中期望的应变容易且可靠地赋予多晶硅薄膜（4a和4b），以提高其迁移率，而不增加赋予硅薄膜的应变的额外步骤。

公开(公告)号：US07305091B1

公开(公告)日：2007-12-04

申请号：US09787029

申请日：1999-08-10

申请人： Takuya Hirano

发明人： Takuya Hirano

IPC分类号： H04K1/00 ,  H04L9/00

CPC分类号： H04B10/70 ,  H04L9/0858

摘要： A quantum cipher communication system includes a sender's apparatus, a recipient's apparatus and a transmission path. The sender's apparatus includes a beam splitting for splitting a laser beam into a weak signal light and an intense reference light, a phase modulation unit for imparting a phase change on either the weak signal light or the intense reference light. The recipient's apparatus includes a phase modulation unit for imparting a phase change on either the weak signal light or the intense reference light, a superimposing unit for superimposing the weak signal light and the intense reference light, a pair of photoconductive diodes for converting two output lights from the superimposing unit into electric signals, and an amplifying unit for amplifying a difference signal between the electric signals, wherein the recipient assigns bit values by comparing the difference signal with threshold values.

摘要翻译： 量子密码通信系统包括发送者设备，接收者设备和传输路径。 发送器的设备包括用于将激光束分解为弱信号光和强参考光的分束，用于在弱信号光或强参考光上施加相位变化的相位调制单元。 接收装置包括用于在弱信号光或强参考光上施加相位变化的相位调制单元，用于叠加弱信号光和强参考光的叠加单元，用于转换两个输出光的一对光电导二极管 以及用于放大电信号之间的差分信号的放大单元，其中接收者通过将差分信号与阈值进行比较来分配比特值。

公开(公告)号：US20060083376A1

公开(公告)日：2006-04-20

申请号：US11242222

申请日：2005-10-03

申请人： Yohei Kawamoto ,  Ryo Namiki ,  Takuya Hirano

发明人： Yohei Kawamoto ,  Ryo Namiki ,  Takuya Hirano

IPC分类号： H04K1/00

CPC分类号： H04L9/0852

摘要： In quantum cryptography communication, a sequence of signals in the form of quantum states randomly selected from a plurality of quantum states each having a different phase modulation angle is transmitted from a data transmitting apparatus. In a data receiving apparatus, if the sequence of samples is received, a plurality of bases corresponding to a plurality of different phase modulation angles are randomly selected, and a homodyne detection process is performed using the selected bases. Information indicating the bases used in the homodyne detection process is sent to the transmitting apparatus. In the data transmitting apparatus, depending on the bases used in the receiving apparatus, bit values are assigned to the plurality of different quantum states selected by the transmitting apparatus, and information indicating the assigned bit values is sent to the data receiving apparatus.

摘要翻译： 在量子加密通信中，从数据发送装置发送从多个具有不同相位调制角度的量子态随机选择的量子态形式的信号序列。 在数据接收装置中，如果接收到样本序列，则随机选择与多个不同的相位调制角度对应的多个基数，并使用所选择的基数进行零差检测处理。 指示在零差检测处理中使用的基准的信息被发送到发送装置。 在数据发送装置中，根据接收装置中使用的基准，将比特值分配给由发送装置选择的多个不同的量子状态，并且向数据接收装置发送指示分配的比特值的信息。

公开(公告)号：US06495822B2

公开(公告)日：2002-12-17

申请号：US09926699

申请日：2001-12-04

申请人： Takuya Hirano ,  Yoshio Torii ,  Kenichi Ito ,  Ryo Namiki

发明人： Takuya Hirano ,  Yoshio Torii ,  Kenichi Ito ,  Ryo Namiki

IPC分类号： H05H302

CPC分类号： H05H3/02 ,  G01N23/00 ,  H05H3/04

摘要： A atomic beam generating method and apparatus for producing an atomic beam that is high in flow rate is disclosed which makes vacuum equipment simpler in construction, and is high in the rate of extraction of atoms, capable of adjusting its flow rate and applicable to many different atomic species. The atomic beam generating apparatus used produces a beam of atoms by extracting the atoms from a low temperature atomic cloud formed by laser cooling. The low temperature atomic cloud is formed by irradiating the atoms with at least two sets of laser lights in a region of laser beam intersection in which they intersect, each of the sets of laser lights being made of a pair of laser beams which are opposite in direction of travel to each other, the laser beams intersecting in the region of laser beam intersection. In this region of laser beam intersection there is provided a laser beam shading zone in which one of the laser beams in each of the sets of laser lights that is traveling in a particular direction is obstructed to provide a shade therefor. The laser beam shading zone is so located in the region of laser beam intersection that in the laser beam shading zone a force is brought about that is effective to force atoms in the laser beam shading zone to move towards a preselected direction, thereby forming a beam thereof.

摘要翻译： 公开了一种用于制造流量高的原子束的原子束产生方法和装置，其使得真空设备的结构更简单，并且原子提取率高，能够调节其流量并适用于许多不同的 原子物种 所使用的原子束产生装置通过从由激光冷却形成的低温原子云提取原子而产生原子束。 低温原子云是通过在激光束相交的区域中用至少两组激光照射原子而形成的，每组激光由一对相对的激光束组成 相互行进的方向，激光束在激光束交叉区域相交。 在该激光束交叉区域中，设置有激光束遮蔽区，激光束的每一组在特定方向上行进的激光束之一被阻挡以提供阴影。 激光束阴影区域位于激光束交叉区域中，在激光束遮蔽区域中产生的力是有效的，以迫使激光束遮蔽区域中的原子向预选方向移动，从而形成光束 其中。

公开(公告)号：US08165298B2

公开(公告)日：2012-04-24

申请号：US12032560

申请日：2008-02-15

申请人： Yohei Kawamoto ,  Takuya Hirano ,  Kuninori Shino ,  Masakazu Ukita

发明人： Yohei Kawamoto ,  Takuya Hirano ,  Kuninori Shino ,  Masakazu Ukita

IPC分类号： H04K1/00

CPC分类号： H04B10/548 ,  G09C1/00 ,  H04L9/0858

摘要： In a quantum cryptography communication apparatus, a light pulse is generated by a light source and split into a signal light pulse and a reference light pulse on a receiving side. The signal light pulse and the reference light pulse are transmitted to a sending side via a communication channel. On the sending side, the received reference light is passed through a first optical path and phase-modulated by a randomly selected amount. Communication information is acquired on the basis of the reference light passed through the first optical path and the signal light passed via a second optical path. Frequencies of the signal light pulse and the reference light pulse are shifted. The intensity of the signal light pulses is attenuated and phase-modulated by an amount corresponding to the communication information. The resultant signal light pulse and the reference light pulse are returned back to the receiving side.

摘要翻译： 在量子密码通信装置中，由光源产生光脉冲，并在接收侧分割为信号光脉冲和参考光脉冲。 信号光脉冲和参考光脉冲经由通信信道发送到发送侧。 在发送侧，接收到的参考光通过第一光路并被随机选择的量进行相位调制。 基于通过第一光路的参考光和经由第二光路通过的信号光获取通信信息。 信号光脉冲和参考光脉冲的频率偏移。 信号光脉冲的强度被衰减并相位调制与通信信息对应的量。 所得到的信号光脉冲和参考光脉冲被返回到接收侧。