公开(公告)号：US20110175107A1

公开(公告)日：2011-07-21

申请号：US13005714

申请日：2011-01-13

申请人： Taro NISHIGUCHI ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

发明人： Taro NISHIGUCHI ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

IPC分类号： H01L29/16

CPC分类号： H01L21/02378 ,  H01L21/02002 ,  H01L21/02529 ,  H01L21/02667 ,  H01L21/30625 ,  H01L29/1608

摘要： A base portion is made of silicon carbide and has a main surface. At least one silicon carbide layer is provided on the main surface of the base portion in a manner exposing a region of the main surface along an outer edge of the main surface. At least one protection layer is provided on this region of the main surface of the base portion along the outer edge of the main surface. Thus, a silicon carbide substrate can be polished with high in-plane uniformity.

摘要翻译： 基部由碳化硅制成并具有主表面。 至少一个碳化硅层以沿着主表面的外边缘露出主表面的区域的方式设置在基部的主表面上。 沿着主表面的外缘在基部的主表面的该区域上设置至少一个保护层。 因此，可以以高的面内均匀性抛光碳化硅衬底。

公开(公告)号：US20110278594A1

公开(公告)日：2011-11-17

申请号：US13104247

申请日：2011-05-10

申请人： Taro NISHIGUCHI ,  Makoto SASAKI ,  Shin HARADA ,  Kyoko OKITA ,  Hiroki INOUE ,  Yasuo NAMIKAWA

发明人： Taro NISHIGUCHI ,  Makoto SASAKI ,  Shin HARADA ,  Kyoko OKITA ,  Hiroki INOUE ,  Yasuo NAMIKAWA

IPC分类号： H01L29/12 ,  C30B23/02 ,  H01L21/20 ,  B32B13/04

CPC分类号： H01L29/7802 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02631 ,  H01L21/0475 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate by heating the base substrate in the crucible to fall within a range of temperature equal to or higher than a sublimation temperature of silicon carbide constituting the base substrate. The crucible has an inner wall at least a portion of which is provided with a coating layer made of silicon carbide.

摘要翻译： 一种制造碳化硅衬底的方法包括以下步骤：制备由单晶碳化硅制成的SiC衬底; 将基底基板设置在坩埚内以面对SiC基板的主表面; 以及通过加热所述坩埚中的所述基底基板而形成与所述SiC基板的主表面接触的碳化硅的基底层，以落入等于或高于构成所述基底基板的碳化硅的升华温度的温度范围内。 坩埚具有内壁，其至少一部分设置有由碳化硅制成的涂层。

公开(公告)号：US20110233561A1

公开(公告)日：2011-09-29

申请号：US13073385

申请日：2011-03-28

申请人： Taro NISHIGUCHI ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

发明人： Taro NISHIGUCHI ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

IPC分类号： H01L29/161

CPC分类号： H01L29/7802 ,  H01L21/0445 ,  H01L21/0475 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/417 ,  H01L29/6606 ,  H01L29/66068

摘要： A supporting portion is made of silicon carbide. At least one layer has first and second surfaces. The first surface is supported by the supporting portion. The at least one layer has first and second regions. The first region is made of silicon carbide of a single-crystal structure. The second region is made of graphite. The second surface has a surface formed by the first region. The first surface has a surface formed by the first region, and a surface formed by the second region. In this way, a semiconductor substrate can be provided which has a region made of silicon carbide having a single-crystal structure and a supporting portion made of silicon carbide and allows for reduced electric resistance of an interface therebetween.

摘要翻译： 支撑部分由碳化硅制成。 至少一层具有第一和第二表面。 第一表面由支撑部分支撑。 所述至少一层具有第一和第二区域。 第一区域由单晶结构的碳化硅制成。 第二区域由石墨制成。 第二表面具有由第一区域形成的表面。 第一表面具有由第一区域形成的表面和由第二区域形成的表面。 以这种方式，可以提供具有由具有单晶结构的碳化硅制成的区域和由碳化硅制成的支撑部分的区域并且允许其之间的界面的电阻降低的半导体衬底。

公开(公告)号：US20110198027A1

公开(公告)日：2011-08-18

申请号：US13025879

申请日：2011-02-11

申请人： Taro NISHIGUCHI ,  Makoto SASAKI ,  Shin HARADA ,  Kyoko OKITA ,  Hiroki INOUE ,  Yasuo NAMIKAWA

发明人： Taro NISHIGUCHI ,  Makoto SASAKI ,  Shin HARADA ,  Kyoko OKITA ,  Hiroki INOUE ,  Yasuo NAMIKAWA

IPC分类号： C09J5/10

CPC分类号： H01L29/7802 ,  H01L21/02002 ,  H01L21/7602 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068

摘要： A base portion and first and second silicon carbide substrates are disposed in a processing chamber such that a first side surface of a first silicon carbide substrate and a side surface of a second silicon carbide substrate face each other. The processing chamber has an inner surface at least a portion of which is covered with an absorbing portion including Ta atoms and C atoms. In order to connect the first and second side surfaces to each other, a temperature in the processing chamber is increased to reach or exceed a temperature at which silicon carbide can sublime. In the step of increasing the temperature, at least a portion of the absorbing portion is carbonized.

摘要翻译： 基底部分和第一和第二碳化硅衬底设置在处理室中，使得第一碳化硅衬底的第一侧面和第二碳化硅衬底的侧表面彼此面对。 处理室具有内表面，其至少一部分被包含Ta原子和C原子的吸收部分覆盖。 为了将第一和第二侧表面彼此连接，处理室中的温度增加到达或超过碳化硅可以升华的温度。 在增加温度的步骤中，吸收部分的至少一部分被碳化。

公开(公告)号：US20130061801A1

公开(公告)日：2013-03-14

申请号：US13566070

申请日：2012-08-03

申请人： Shinsuke FUJIWARA ,  Shin HARADA ,  Taro NISHIGUCHI ,  Hiroki INOUE ,  Naoki OOI

发明人： Shinsuke FUJIWARA ,  Shin HARADA ,  Taro NISHIGUCHI ,  Hiroki INOUE ,  Naoki OOI

IPC分类号： C30B23/02

CPC分类号： C30B23/002 ,  C30B29/36

摘要： Provided is a method for manufacturing a silicon carbide crystal, including the steps of: placing a seed substrate and a source material for the silicon carbide crystal within a growth container; and growing the silicon carbide crystal with a diameter of more than 4 inches on a surface of the seed substrate by a sublimation method, in the step of growing, a pressure within the growth container being changed from a predetermined pressure, at a predetermined change rate.

摘要翻译： 提供一种制造碳化硅晶体的方法，包括以下步骤：将种子基底和用于碳化硅晶体的源材料放置在生长容器内; 并且通过升华法在种子基底的表面上生长直径大于4英寸的碳化硅晶体，在生长步骤中，生长容器内的压力以预定的压力以预定的变化率变化 。

公开(公告)号：US20130071643A1

公开(公告)日：2013-03-21

申请号：US13605265

申请日：2012-09-06

申请人： Shin HARADA ,  Shinsuke FUJIWARA ,  Taro NISHIGUCHI

发明人： Shin HARADA ,  Shinsuke FUJIWARA ,  Taro NISHIGUCHI

IPC分类号： C30B23/02 ,  C01B31/36

CPC分类号： C30B23/025 ,  C30B23/005 ,  C30B29/36 ,  C30B35/007 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02631

摘要： A silicon carbide substrate capable of stably forming a device of excellent performance, and a method of manufacturing the same are provided. A silicon carbide substrate is made of a single crystal of silicon carbide, and has a width of not less than 100 mm, a micropipe density of not more than 7 cm−2, a threading screw dislocation density of not more than 1×104 cm−2, a threading edge dislocation density of not more than 1×104 cm−2, a basal plane dislocation density of not more than 1×104 cm−2, a stacking fault density of not more than 0.1 cm−1, a conductive impurity concentration of not less than 1×1018 cm−2, a residual impurity concentration of not more than 1×1016 cm−2, and a secondary phase inclusion density of not more than 1 cm−3.

摘要翻译： 提供能够稳定地形成优异性能的器件的碳化硅衬底及其制造方法。 碳化硅衬底由碳化硅单晶制成，宽度不小于100mm，微管密度不超过7cm -2，螺纹位错密度不大于1×104cm -2，螺纹刃位错密度不大于1×104cm-2，基面位错密度不大于1×104cm-2，堆垛层错密度不大于0.1cm-1，导电 杂质浓度不小于1×1018cm-2，残留杂质浓度不大于1×1016cm-2，次相包含密度不大于1cm-3。

公开(公告)号：US20110229719A1

公开(公告)日：2011-09-22

申请号：US13048064

申请日：2011-03-15

申请人： Taro NISHIGUCHI ,  Shin Harada

发明人： Taro NISHIGUCHI ,  Shin Harada

IPC分类号： C30B23/02 ,  B32B9/04 ,  B32B15/04

CPC分类号： C30B29/36 ,  C30B23/00 ,  C30B23/025 ,  Y10T428/30 ,  Y10T428/31678

摘要： A manufacturing method for a crystal, a manufacturing apparatus for a crystal, and a stacked film capable of growing a high-quality crystal are provided. The manufacturing method for a crystal includes the steps of: preparing a seed crystal having a frontside surface and a backside surface opposite to the frontside surface; forming at least one film selected from the group consisting of a hard carbon film, a diamond film, a tantalum film, and a tantalum carbide film on the backside surface of the seed crystal; and growing the crystal on the frontside surface of the seed crystal.

摘要翻译： 提供了一种用于晶体的制造方法，用于晶体的制造装置和能够生长高品质晶体的叠层膜。 晶体的制造方法包括以下步骤：制备具有前侧表面和与前侧表面相对的背面的晶种; 在晶种的背面上形成选自硬碳膜，金刚石膜，钽膜和碳化钽膜中的至少一种膜; 并在晶体的前侧表面生长晶体。

公开(公告)号：US20120308758A1

公开(公告)日：2012-12-06

申请号：US13475360

申请日：2012-05-18

申请人： Tsutomu HORI ,  Makoto SASAKI ,  Taro NISHIGUCHI ,  Shinsuke FUJIWARA

发明人： Tsutomu HORI ,  Makoto SASAKI ,  Taro NISHIGUCHI ,  Shinsuke FUJIWARA

IPC分类号： C30B29/36 ,  C30B29/66 ,  C30B23/00

CPC分类号： C30B23/00 ,  C30B29/36

摘要： A silicon carbide crystal ingot having a surface greater than or equal to 4 inches, having an n-type dopant concentration greater than or equal to 1×1015 atoms/cm3 and less than or equal to 1×1020 atoms/cm3, a metal atom concentration greater than or equal to 1×1014 atoms/cm3 and less than or equal to 1×1018 atoms/cm3, and not exceeding the n-type dopant concentration, and a metal atom concentration gradient less than or equal to 1×1017 atoms/(cm3·mm), a silicon carbide single crystal wafer produced using the ingot, and a method for fabricating the silicon carbide crystal ingot.

摘要翻译： 具有大于或等于4英寸的表面，具有大于或等于1×1015原子/ cm3且小于或等于1×1020原子/ cm3的n型掺杂剂浓度的碳化硅晶锭，金属原子 浓度大于或等于1×1014原子/ cm3且小于或等于1×1018原子/ cm3，并且不超过n型掺杂剂浓度，并且小于或等于1×1017原子的金属原子浓度梯度 /（cm 3·mm），使用该锭制造的碳化硅单晶晶片和制造碳化硅晶体锭的方法。

公开(公告)号：US20110217224A1

公开(公告)日：2011-09-08

申请号：US13037496

申请日：2011-03-01

申请人： Taro NISHIGUCHI

发明人： Taro NISHIGUCHI

IPC分类号： C01B31/36 ,  C30B23/06

CPC分类号： C30B23/06 ,  C01B32/956

摘要： A method of manufacturing SiC crystal includes the following steps. A manufacturing apparatus including a crucible having a main body portion and a heat insulating material covering the main body portion is prepared. In the main body portion, seed crystal is arranged opposed to a source material. The source material is heated to sublime and a source gas is precipitated on the seed crystal, to thereby grow SiC crystal. The step of preparing the manufacturing apparatus includes the step of arranging a heat radiation portion higher in thermal conductivity than the heat insulating material on a side of an outer surface of the main body portion on a side of seed crystal and covering the entire outer surface of the main body portion on the side of the seed crystal with the heat radiation portion or with the heat radiation portion and the heat insulating material.

摘要翻译： 制造SiC晶体的方法包括以下步骤。 制备包括具有主体部分和覆盖主体部分的绝热材料的坩埚的制造装置。 在主体部分中，晶种与源材料相对配置。 将源材料加热至高温，并将源气体沉淀在晶种上，从而生长SiC晶体。 准备制造装置的步骤包括以下步骤：在晶体侧的主体部分的外表面的侧面上布置导热性高于绝热材料的散热部分，并且覆盖整个外表面 具有散热部分或散热部分和绝热材料的籽晶侧的主体部分。

公开(公告)号：US20110300354A1

公开(公告)日：2011-12-08

申请号：US13117474

申请日：2011-05-27

申请人： Taro NISHIGUCHI

发明人： Taro NISHIGUCHI

IPC分类号： C30B23/02 ,  B32B3/10 ,  B32B9/04

CPC分类号： H01L29/7802 ,  C30B29/36 ,  C30B33/06 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068 ,  Y10T428/24926

摘要： A base portion is prepared which has a supporting layer made of a material different from silicon carbide, and a silicon carbide layer formed on the supporting layer. Each of first and second silicon carbide single-crystals is connected onto the silicon carbide layer of the base portion. In this way, a combined substrate having such a plurality of silicon carbide single-crystals can be provided at low cost.

摘要翻译： 准备具有由不同于碳化硅的材料制成的支撑层的基部和在支撑层上形成的碳化硅层。 第一和第二碳化硅单晶中的每一个连接到基部的碳化硅层上。 以这种方式，可以以低成本提供具有这种多个碳化硅单晶的组合基板。