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公开(公告)号：US5918855A
公开(公告)日：1999-07-06
申请号：US501032
申请日：1995-11-01
申请人： Tatsumi Hamanaka , Mitsuyoshi Seki , Takatoshi Kawabata , Toshiyuki Murahashi , Tadahiro Honda , Yoshiyuki Kaneko , Hiroyuki Iwashita
发明人： Tatsumi Hamanaka , Mitsuyoshi Seki , Takatoshi Kawabata , Toshiyuki Murahashi , Tadahiro Honda , Yoshiyuki Kaneko , Hiroyuki Iwashita
CPC分类号： E03C1/057 , Y10T137/86389
摘要： In an automatic faucet having a hand sensor S to start and stop discharging water automatically, only hands can be detected accurately without detecting a washbowl (chinaware) and water stream erroneously. The sensor S comprises a light emitter and a light receiver. The directional axis d of a detection region (in which the light emitting region of the light emitter and the light receiving region of the light receiver are overlapped with each other) intersects the discharged water stream, and further the intersection angle between both is adjusted less than 70 degrees, irrespective of the flow rate of the discharged water. The reflected light levels detected by the light receiver are sampled periodically to calculate an average value and a variance value on the basis of at least eight most updated sampled data. Water discharge is started and stopped on the basis of the calculated average value and the variance value.
摘要翻译： PCT No.PCT / JP94 / 02156 Sec。 371日期：1995年11月1日 102（e）1995年11月1日日期PCT 1994年12月20日PCT PCT。 公开号WO95 / 17556 日期：1995年6月29日在具有手动传感器S的自动水龙头自动启动和停止排水的情况下，只有在没有检测到洗手盆（瓷器）和水流错误的情况下才能准确检测到手。 传感器S包括光发射器和光接收器。 检测区域（其中发光体的发光区域和光接收体的光接收区域彼此重叠）的方向轴d与排出的水流相交，并且进一步将两者之间的交叉角度调整得较少 超过70度，不管排放水的流量如何。 周期性地对由光接收器检测的反射光电平进行采样，以基于至少八个最新的采样数据来计算平均值和方差值。 基于计算出的平均值和方差值开始并停止排水。
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公开(公告)号：US5758688A
公开(公告)日：1998-06-02
申请号：US747343
申请日：1996-11-12
申请人： Tatsumi Hamanaka , Mitsuyoshi Seki , Takatoshi Kawabata , Toshiyuki Murahashi , Tadahiro Honda , Yoshiyuki Kaneko , Hiroyuki Iwashita
发明人： Tatsumi Hamanaka , Mitsuyoshi Seki , Takatoshi Kawabata , Toshiyuki Murahashi , Tadahiro Honda , Yoshiyuki Kaneko , Hiroyuki Iwashita
CPC分类号： E03C1/057 , Y10T137/86389
摘要： In an automatic faucet having a hand sensor S to start and stop discharging water automatically, only hands can be detected accurately without detecting a washbowl (chinaware) and water stream erroneously. The sensor S comprises a light emitter and a light receiver. The directional axis d of a detection region (in which the light emitting region of the light emitter and the light receiving region of the light receiver are overlapped with each other) intersects the discharged water stream, and further the intersection angle between both is adjusted less than 70 degrees, irrespective of the flow rate of the discharged water. The reflected light levels detected by the light receiver are sampled periodically to calculate an average value and a variance value on the basis of at least eight most updated sampled data. Water discharge is started and stopped on the basis of the calculated average value and the variance value.
摘要翻译： 在具有手动传感器S自动启动和停止自动排水的自动水龙头的情况下，只有在没有检测到洗手盆（瓷器）和水流错误的情况下才能精确地检测到手。 传感器S包括光发射器和光接收器。 检测区域（其中发光体的发光区域和光接收体的光接收区域彼此重叠）的方向轴d与排出的水流相交，并且进一步将两者之间的交叉角度调整得较少 超过70度，不管排放水的流量如何。 周期性地对由光接收器检测的反射光电平进行采样，以基于至少八个最新的采样数据来计算平均值和方差值。 基于计算出的平均值和方差值开始并停止排水。
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3.发明授权公开(公告)号：US09017902B2
公开(公告)日：2015-04-28
申请号：US13378739
申请日：2010-06-17
摘要： Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 has an at least two-layer structure comprising a lower layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen and an upper layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. The ratio of the etching rate of the lower layer to that of the upper layer is 1.0 or more and 20.0 or less in etching which is carried out by supplying a fluorine-containing substance to a target portion and irradiating charged particles to the target portion.
摘要翻译： 提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。 掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2具有至少两层结构，包括下层 主要由含有过渡金属，硅和至少一种或多种选自氧和氮的元素的材料构成的层，以及主要由含有过渡金属，硅以及至少一种或多种元素的材料组成的上层 氧气和氮气。 在通过向目标部分供给含氟物质并将带电粒子照射到目标部分进行的蚀刻中，下层的蚀刻速率与上层的蚀刻速率的比例为1.0以上且20.0以下。
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4.发明授权Mask blank, transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device 有权掩模毛坯，转印掩模，制造转印掩模的方法以及制造半导体器件的方法公开(公告)号：US08822103B2
公开(公告)日：2014-09-02
申请号：US13288365
申请日：2011-11-03
摘要： A mask blank for manufacturing a transfer mask adapted to be applied with ArF excimer laser exposure light that has a transparent substrate and a light-shielding film formed into a transfer pattern. The light-shielding film has at least two-layers, one a lower layer composed mainly of a first material containing a transition metal, silicon, and nitrogen, and the other an upper layer composed mainly of a second material containing a transition metal, silicon, and nitrogen. A ratio of a first etching rate of the lower layer to a second etching rate of the upper layer is 1.0 or more and 5.0 or less in etching carried out by supplying a fluorine-containing substance onto a target portion and irradiating charged particles to the target portion. Another ratio satisfies the following formula CN≧−0.00526CMo2−0.640CMo=26.624.
摘要翻译： 用于制造适于施加有形成为转印图案的透明基板和遮光膜的ArF准分子激光曝光光的转印掩模的掩模坯料。 遮光膜具有至少两层，一层主要由含有过渡金属，硅和氮的第一材料构成的下层，另一层是主要由含有过渡金属的第二材料构成的上层，硅 ，和氮气。 在通过向目标部分供给含氟物质并将带电粒子照射到目标物上的蚀刻中，下层的第一蚀刻速率与上层的第二蚀刻速率的比率为1.0以上且5.0以下 一部分。 另一比例满足下列公式CN≧-0.00526CMo2-0.640CMo = 26.624。
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5.发明授权Photomask blank and production method thereof, and photomask production method, and semiconductor device production method 有权光掩模坯及其制造方法以及光掩模的制造方法以及半导体装置的制造方法公开(公告)号：US08697315B2
公开(公告)日：2014-04-15
申请号：US13347425
申请日：2012-01-10
IPC分类号： G03F1/00
摘要： A photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern. The photomask blank provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film. The photomask blank includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
摘要翻译： 一种光掩模坯料，其能够防止由用于形成抗蚀剂图案的电子束图案拉伸引起的静电积聚。 光掩模坯料通过优化沿着屏蔽膜的深度方向的干蚀刻速率而提供良好的图案精度，并且通过提高屏蔽膜的干蚀刻速率能够减少干蚀刻时间。 光掩模坯料包括其上具有主要由铬构成的屏蔽膜的透光性基板，屏蔽膜含有氢。 屏蔽膜以这样的方式形成，使得表面侧的层的成膜速率低于屏蔽膜的透光性基板侧的层的成膜速度。 透光性基板侧的屏蔽膜的干蚀刻率比表面侧低。
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公开(公告)号：US08404406B2
公开(公告)日：2013-03-26
申请号：US12935519
申请日：2009-03-31
IPC分类号： G03F1/22
摘要： The present invention provides a photomask blank in which a light-shielding film consisting of a plurality of layers is provided on a light transmissive substrate, wherein a layer that is provided to be closest to the front surface is made of CrO, CrON, CrN, CrOC or CrOCN, and wherein the atom number density of the front-surface portion of the light-shielding film is 9×1022 to 14×1022 atms/cm3.
摘要翻译： 本发明提供了一种光掩模坯料，其中由多层构成的遮光膜设置在透光基板上，其中设置成最靠近前表面的层由CrO，CrON，CrN， CrOC或CrOCN，其中遮光膜的前表面部分的原子数密度为9×1022〜14×1022atms / cm3。
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公开(公告)号：US08329364B2
公开(公告)日：2012-12-11
申请号：US13001365
申请日：2009-06-25
IPC分类号： G06F1/22
摘要： The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a lower layer, an interlayer and an upper layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the lower layer is made of a film containing a metal and has a first etching rate; the upper layer is made of a film containing a metal and has a third etching rate; the interlayer is made of a film containing the same metal as that contained in the lower layer or the upper layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the interlayer is 30% or less of the thickness of the entire light-shielding film.
摘要翻译： 本发明提供一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料，其中：在透光基板上设置有遮光膜; 遮光膜具有层叠结构，其中从靠近透光基底的一侧依次层叠下层，中间层和上层; 整个遮光膜的厚度为60nm以下; 下层由含有金属的膜制成，具有第一蚀刻速率; 上层由含有金属的膜制成，具有第三蚀刻速率; 中间层由含有与下层或上层相同的金属的膜制成，具有比第一蚀刻速度和第三蚀刻速度低的第二蚀刻速率; 并且中间层的厚度为整个遮光膜的厚度的30％以下。
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8.发明申请PHOTOMASK BLANK, PHOTOMASK , AND METHOD FOR MANUFACTURING PHOTOMASK BLANK 有权PHOTOMASK BLANK，PHOTOMASK和制造光电隔离层的方法公开(公告)号：US20110070533A1
公开(公告)日：2011-03-24
申请号：US12935464
申请日：2009-03-31
IPC分类号： G03F1/00
摘要： The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 70 nm or less; the back-surface antireflection layer is made of a film containing a metal and has a first etching rate; the front-surface antireflection layer is made of a film containing a metal and has a third etching rate; the light-shielding layer is made of a film containing the same metal as that contained in the back-surface antireflection layer or the front-surface antireflection layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the light-shielding layer is 45% or less of the thickness of the entire light-shielding film.
摘要翻译： 本发明提供一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料，其中：在透光基板上设置有遮光膜; 遮光膜具有层叠结构，其中背面防反射层，遮光层和前表面抗反射层从靠近透光基板的一侧依次层叠; 整个遮光膜的厚度为70nm以下; 背面抗反射层由含有金属的膜制成，具有第一蚀刻速率; 前表面抗反射层由含有金属的膜制成，具有第三蚀刻速率; 遮光层由含有与背面防反射层或前表面防反射层中所含的金属相同的金属的膜制成，并且具有比第一蚀刻速率和第三蚀刻速率低的第二蚀刻速率 ; 遮光层的厚度为整个遮光膜的厚度的45％以下。
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公开(公告)号：US06765694B1
公开(公告)日：2004-07-20
申请号：US09556623
申请日：2000-04-21
申请人： Hiromi Yanagita , Hiroyuki Iwashita
发明人： Hiromi Yanagita , Hiroyuki Iwashita
IPC分类号： G03F308
CPC分类号： H04N1/52
摘要： The color image processor in accordance with the invention has a raster circuit 1 for receiving data about an image of multiple gray levels of plural colors, an UCR/BG circuit 2 for decomposing the image data received from the raster circuit 1 by the use of input Raster Operation codes according to color materials of plural colors, rasterizing the image data into a buffer memory 5, and generating black, and a binarization circuit 3 for binarizing raster data about each gray level and converting the data into data about images each having one gray level. If the aforementioned Raster Operation codes are other than Raster Operation codes having a base image, the raster output function, the UCR/BG functions, and the binarization function are performed simultaneously.
摘要翻译： 根据本发明的彩色图像处理器具有用于接收关于多种颜色的多个灰度级的图像的数据的光栅电路1，用于通过使用输入来分解从光栅电路1接收的图像数据的UCR / BG电路2 光栅操作根据多种颜色的颜色材料进行编码，将图像数据光栅化成缓冲存储器5，并生成黑色;二值化电路3，用于对关于每个灰度级的光栅数据进行二值化，并将数据转换成关于每个具有一个灰度的图像的数据 水平。 如果上述光栅操作码不同于具有基本图像的光栅操作码，则同时执行光栅输出功能，UCR / BG功能和二值化功能。
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10.发明授权公开(公告)号：US06270874B1
公开(公告)日：2001-08-07
申请号：US09171120
申请日：1998-12-08
申请人： Hiroyuki Iwashita , Fumiko Gotoh , Atsuo Tanaka
发明人： Hiroyuki Iwashita , Fumiko Gotoh , Atsuo Tanaka
IPC分类号： B32B500
CPC分类号： B32B15/09 , B32B15/08 , B32B27/36 , B32B2307/518 , B32B2367/00 , B32B2439/00 , B32B2439/66 , Y10T428/12549 , Y10T428/12569 , Y10T428/24 , Y10T428/31681 , Y10T428/31786
摘要： The present invention produces a polyethylene terephthalate resin covered metal sheet having extremely excellent formability, which can be available for uses in which severe forming is practiced such as drawing, drawing and ironing and drawn and stretch forming as well as the composite forming consisting of drawn and stretch forming followed by ironing. A biaxially oriented film consisting of polyethylene terephthalate resin having a low temperature crystallization temperature ranging from 130° C. to 165° C. is covered at least on one side of a metal sheet by heat bonding in the way that the biaxial orientation of the film of the polyethylene terephthalate resin after being covered is gradually increasing from the contacting portion of the film to the metal sheet to the surface portion of the film.
摘要翻译： 本发明生产具有非常优异成型性的聚对苯二甲酸乙二醇酯树脂被覆金属片，其可用于进行严格成型如拉伸，拉伸和熨烫以及拉伸和拉伸成形的用途，以及由拉伸和拉伸成型组成的复合成型 拉伸成型，然后熨烫。 由130℃至165℃的低温结晶温度的聚对苯二甲酸乙二醇酯树脂组成的双轴取向膜通过热粘合至少在金属片的一面上被覆，膜的双轴取向 被覆盖的聚对苯二甲酸乙二醇酯树脂从膜的接触部分到金属片逐渐增加到膜的表面部分。
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