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1.发明授权Method for heating part in processing chamber of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus 有权半导体制造装置和半导体制造装置的处理室中的加热部件的方法公开(公告)号：US08824875B2
公开(公告)日：2014-09-02
申请号：US13034858
申请日：2011-02-25
申请人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo
发明人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo
CPC分类号： H01L21/67115 , F27B17/0025 , F27D11/12
摘要： There is provided a method for heating a part within a processing chamber of a semiconductor manufacturing apparatus having a substrate in the processing chamber and performing a process on the substrate. The heating method includes generating heating lights which is generated by a heating light source provided outside the processing chamber and has a wavelength band capable of passing through a first part in the processing chamber and being absorbed into a second part in the processing chamber made of a material different from that of the first part, and heating the second part in the processing chamber by passing the heating lights through the first part in the processing chamber and irradiating the heating lights to the second part in the processing chamber.
摘要翻译： 提供了一种用于加热在处理室中具有基板的半导体制造装置的处理室内的部件并在基板上进行处理的方法。 该加热方法包括产生由设置在处理室外部的加热光源产生的加热灯，并且具有能够通过处理室中的第一部分并被吸收到处理室中的第二部分中的波长带 与第一部分不同的材料，并且通过使加热灯通过处理室中的第一部分并且将加热灯照射到处理室中的第二部分来加热处理室中的第二部分。
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公开(公告)号：US08777483B2
公开(公告)日：2014-07-15
申请号：US13231027
申请日：2011-09-13
申请人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo , Kenji Nagai
发明人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo , Kenji Nagai
CPC分类号： G01K11/12
摘要： The temperature measuring apparatus includes: a light source; a first wavelength-dividing unit which wavelength-divides a light from the light source into m lights whose wavelength bands are different from one another; m first dividing units which divides each of the m lights from the first wavelength-dividing unit into n lights; a transmitting unit which transmits lights from the m first dividing unit to measurement points of an object to be measured; a light receiving unit which receives a light reflected by each of the measurement points; and a temperature calculating unit which calculates a temperature of each of the measurement points based on a waveform of the light received by the light receiving unit.
摘要翻译： 温度测量装置包括：光源; 将来自光源的光波长分割成波长彼此不同的m个光的第一波长分割单元; m个第一分割单元，其将每个m个光从第一波长分割单元分成n个灯; 发射单元，其将来自第m分割单元的光传输到被测量物体的测量点; 光接收单元，其接收由每个测量点反射的光; 以及温度计算单元，其基于由光接收单元接收的光的波形来计算每个测量点的温度。
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公开(公告)号：US08764288B2
公开(公告)日：2014-07-01
申请号：US13476264
申请日：2012-05-21
申请人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
发明人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
CPC分类号： G01J5/02 , G01K1/026 , G01K11/125
摘要： A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes an attenuator that attenuates the reference beam reflected from the reference beam reflector to thereby make an intensity thereof closer to an intensity of the measurement beam reflected from the temperature measurement object.
摘要翻译： 温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。 温度测量装置还包括衰减器，衰减从参考光束反射器反射的参考光束，从而使其强度更接近于从温度测量对象反射的测量光束的强度。
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公开(公告)号：US07952717B2
公开(公告)日：2011-05-31
申请号：US12043406
申请日：2008-03-06
申请人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
发明人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
IPC分类号： G01B9/02
CPC分类号： G01K11/125
摘要： A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes a controller that stores, as initial peak position data, positions of interference peaks respectively measured in advance by irradiating the first to the nth measuring beam onto the first to the nth measurement point of the temperature measurement object, and compares the initial peak position data to positions of interference peaks respectively measured during a temperature measurement to thereby estimate a temperature at each of the first to the nth measurement point.
摘要翻译： 温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。 温度测量装置还包括控制器，该控制器通过将第一至第N测量光束照射到温度测量对象的第一至第N测量点上，预先分别测量的干扰峰的位置作为初始峰值位置数据，并将其进行比较 初始峰值位置数据分别在温度测量期间测量的干涉峰位置，从而估计第一至第n测量点中的每一个处的温度。
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5.发明授权公开(公告)号：US07339656B2
公开(公告)日：2008-03-04
申请号：US10831757
申请日：2004-04-26
IPC分类号： G01N21/00
CPC分类号： G01N21/68 , H01J37/32174 , H01J37/32935 , H01J37/32972 , H01L21/31116
摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.
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6.发明申请公开(公告)号：US20070193514A1
公开(公告)日：2007-08-23
申请号：US11742643
申请日：2007-05-01
IPC分类号： C23C16/00
CPC分类号： G01N21/68 , H01J37/32174 , H01J37/32935 , H01J37/32972 , H01L21/31116
摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.
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公开(公告)号：US08825434B2
公开(公告)日：2014-09-02
申请号：US13248538
申请日：2011-09-29
申请人： Chishio Koshimizu , Jun Yamawaku , Tatsuo Matsudo
发明人： Chishio Koshimizu , Jun Yamawaku , Tatsuo Matsudo
CPC分类号： G01K11/125 , G01B9/02021 , G01B9/02025 , G01B9/0209 , G01B11/0675
摘要： A temperature measuring method includes: transmitting a light to a measurement point of an object to be measured, the object being a substrate on which a thin film is formed; measuring a first interference wave caused by a reflected light from a surface of the substrate, and a second interference wave caused by reflected lights from an interface between the substrate and the thin film and from a rear surface of the thin film; calculating an optical path length from the first interference wave to the second interference wave; calculating a film thickness of the thin film; calculating an optical path difference between an optical path length of the substrate and the calculated optical path length; compensating for the optical path length from the first interference wave to the second interference wave; and calculating a temperature of the object at the measurement point.
摘要翻译： 温度测量方法包括：将光传输到待测物体的测量点，所述物体是其上形成有薄膜的基板; 测量由来自基板的表面的反射光引起的第一干涉波，以及由来自基板和薄膜之间的界面和薄膜的后表面的反射光引起的第二干涉波; 计算从第一干涉波到第二干涉波的光路长度; 计算薄膜的膜厚度; 计算基板的光路长度与算出的光程长度之间的光程差; 补偿从第一干涉波到第二干涉波的光路长度; 并计算测量点处的物体的温度。
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公开(公告)号：US08144332B2
公开(公告)日：2012-03-27
申请号：US12399431
申请日：2009-03-06
申请人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
发明人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
CPC分类号： G01K11/00 , G01K11/125
摘要： A temperature measurement apparatus includes a light source; a first splitter that splits a light beam into a measurement beam and a reference beam; a reference beam reflector that reflects the reference beam; an optical path length adjustor; a second splitter that splits the reflected reference beam into a first reflected reference beam and a second reflected reference beam; a first photodetector that measures an interference between the first reflected reference beam and a reflected measurement beam obtained by the measurement beam reflected from a target object; a second photodetector that measures an intensity of the second reflected reference beam; and a temperature calculation unit. The temperature calculation unit calculates a location of the interference by subtracting an output signal of the second photodetector from an output signal of the first photodetector, and calculates a temperature of the target object from the calculated location of the interference.
摘要翻译： 温度测量装置包括光源; 第一分离器，其将光束分成测量光束和参考光束; 反射参考光束的参考光束反射器; 光路长度调节器; 第二分离器，其将反射的参考光束分成第一反射参考光束和第二反射参考光束; 测量第一反射参考光束与由目标物体反射的测量光束获得的反射测量光束之间的干涉的第一光电检测器; 第二光电检测器，其测量第二反射参考光束的强度; 和温度计算单元。 温度计算单元通过从第一光电检测器的输出信号减去第二光电检测器的输出信号来计算干扰的位置，并根据所计算的干扰位置计算目标对象的温度。
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9.发明申请公开(公告)号：US20110211817A1
公开(公告)日：2011-09-01
申请号：US13034858
申请日：2011-02-25
申请人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo
发明人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo
CPC分类号： H01L21/67115 , F27B17/0025 , F27D11/12
摘要： There is provided a method for heating a part within a processing chamber of a semiconductor manufacturing apparatus having a substrate in the processing chamber and performing a process on the substrate. The heating method includes generating heating lights which is generated by a heating light source provided outside the processing chamber and has a wavelength band capable of passing through a first part in the processing chamber and being absorbed into a second part in the processing chamber made of a material different from that of the first part, and heating the second part in the processing chamber by passing the heating lights through the first part in the processing chamber and irradiating the heating lights to the second part in the processing chamber.
摘要翻译： 提供了一种用于加热在处理室中具有基板的半导体制造装置的处理室内的部件并在基板上进行处理的方法。 该加热方法包括产生由设置在处理室外部的加热光源产生的加热灯，并且具有能够通过处理室中的第一部分并被吸收到处理室中的第二部分中的波长带 与第一部分不同的材料，并且通过使加热灯通过处理室中的第一部分并且将加热灯照射到处理室中的第二部分来加热处理室中的第二部分。
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10.发明授权公开(公告)号：US07582182B2
公开(公告)日：2009-09-01
申请号：US11742688
申请日：2007-05-01
IPC分类号： C23F1/00
CPC分类号： G01N21/68 , H01J37/32174 , H01J37/32935 , H01J37/32972 , H01L21/31116
摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.
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