公开(公告)号：US08824875B2

公开(公告)日：2014-09-02

申请号：US13034858

申请日：2011-02-25

申请人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

IPC分类号： A21B2/00 ,  F26B19/00

CPC分类号： H01L21/67115 ,  F27B17/0025 ,  F27D11/12

摘要： There is provided a method for heating a part within a processing chamber of a semiconductor manufacturing apparatus having a substrate in the processing chamber and performing a process on the substrate. The heating method includes generating heating lights which is generated by a heating light source provided outside the processing chamber and has a wavelength band capable of passing through a first part in the processing chamber and being absorbed into a second part in the processing chamber made of a material different from that of the first part, and heating the second part in the processing chamber by passing the heating lights through the first part in the processing chamber and irradiating the heating lights to the second part in the processing chamber.

摘要翻译： 提供了一种用于加热在处理室中具有基板的半导体制造装置的处理室内的部件并在基板上进行处理的方法。 该加热方法包括产生由设置在处理室外部的加热光源产生的加热灯，并且具有能够通过处理室中的第一部分并被吸收到处理室中的第二部分中的波长带 与第一部分不同的材料，并且通过使加热灯通过处理室中的第一部分并且将加热灯照射到处理室中的第二部分来加热处理室中的第二部分。

公开(公告)号：US08777483B2

公开(公告)日：2014-07-15

申请号：US13231027

申请日：2011-09-13

申请人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Kenji Nagai

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Kenji Nagai

IPC分类号： G01K1/00 ,  G01J5/00

CPC分类号： G01K11/12

摘要： The temperature measuring apparatus includes: a light source; a first wavelength-dividing unit which wavelength-divides a light from the light source into m lights whose wavelength bands are different from one another; m first dividing units which divides each of the m lights from the first wavelength-dividing unit into n lights; a transmitting unit which transmits lights from the m first dividing unit to measurement points of an object to be measured; a light receiving unit which receives a light reflected by each of the measurement points; and a temperature calculating unit which calculates a temperature of each of the measurement points based on a waveform of the light received by the light receiving unit.

摘要翻译： 温度测量装置包括：光源; 将来自光源的光波长分割成波长彼此不同的m个光的第一波长分割单元; m个第一分割单元，其将每个m个光从第一波长分割单元分成n个灯; 发射单元，其将来自第m分割单元的光传输到被测量物体的测量点; 光接收单元，其接收由每个测量点反射的光; 以及温度计算单元，其基于由光接收单元接收的光的波形来计算每个测量点的温度。

公开(公告)号：US09019505B2

公开(公告)日：2015-04-28

申请号：US13240274

申请日：2011-09-22

申请人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Kenji Nagai

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Kenji Nagai

IPC分类号： G01B9/02 ,  H01L21/67 ,  G01J5/58 ,  G01J9/02

CPC分类号： H01L21/67248 ,  G01J9/02 ,  G01J2005/583

摘要： The temperature control system includes: a susceptor which allows an object to be processed to be held on a top surface thereof and includes a flow path, through which a temperature adjusting medium flows, formed therein; a temperature measuring unit which measures a temperature of the object to be processed held on the top surface of the susceptor; a first temperature adjusting unit which adjusts a temperature of the temperature adjusting medium flowing through the flow path; and a second temperature adjusting unit which is disposed between the susceptor and the first temperature adjusting unit, and adjusts a temperature of the temperature adjusting medium based on a result of the measurement of the temperature measuring unit.

摘要翻译： 温度控制系统包括：一个允许被处理物体被保持在其顶面上的基座，并且包括在其中形成温度调节介质流过的流路; 温度测量单元，其测量保持在所述基座的顶表面上的被处理物体的温度; 第一温度调节单元，其调节流过所述流路的温度调节介质的温度; 以及第二温度调节单元，其设置在所述基座和所述第一温度调节单元之间，并且基于所述温度测量单元的测量结果来调节所述温度调节介质的温度。

公开(公告)号：US08825434B2

公开(公告)日：2014-09-02

申请号：US13248538

申请日：2011-09-29

申请人： Chishio Koshimizu ,  Jun Yamawaku ,  Tatsuo Matsudo

发明人： Chishio Koshimizu ,  Jun Yamawaku ,  Tatsuo Matsudo

IPC分类号： G01K11/00 ,  G01K11/12 ,  G01B11/06 ,  G01B9/02

CPC分类号： G01K11/125 ,  G01B9/02021 ,  G01B9/02025 ,  G01B9/0209 ,  G01B11/0675

摘要： A temperature measuring method includes: transmitting a light to a measurement point of an object to be measured, the object being a substrate on which a thin film is formed; measuring a first interference wave caused by a reflected light from a surface of the substrate, and a second interference wave caused by reflected lights from an interface between the substrate and the thin film and from a rear surface of the thin film; calculating an optical path length from the first interference wave to the second interference wave; calculating a film thickness of the thin film; calculating an optical path difference between an optical path length of the substrate and the calculated optical path length; compensating for the optical path length from the first interference wave to the second interference wave; and calculating a temperature of the object at the measurement point.

摘要翻译： 温度测量方法包括：将光传输到待测物体的测量点，所述物体是其上形成有薄膜的基板; 测量由来自基板的表面的反射光引起的第一干涉波，以及由来自基板和薄膜之间的界面和薄膜的后表面的反射光引起的第二干涉波; 计算从第一干涉波到第二干涉波的光路长度; 计算薄膜的膜厚度; 计算基板的光路长度与算出的光程长度之间的光程差; 补偿从第一干涉波到第二干涉波的光路长度; 并计算测量点处的物体的温度。

公开(公告)号：US20110211817A1

公开(公告)日：2011-09-01

申请号：US13034858

申请日：2011-02-25

申请人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

IPC分类号： F27D11/12 ,  H01L21/00

CPC分类号： H01L21/67115 ,  F27B17/0025 ,  F27D11/12

摘要： There is provided a method for heating a part within a processing chamber of a semiconductor manufacturing apparatus having a substrate in the processing chamber and performing a process on the substrate. The heating method includes generating heating lights which is generated by a heating light source provided outside the processing chamber and has a wavelength band capable of passing through a first part in the processing chamber and being absorbed into a second part in the processing chamber made of a material different from that of the first part, and heating the second part in the processing chamber by passing the heating lights through the first part in the processing chamber and irradiating the heating lights to the second part in the processing chamber.

摘要翻译： 提供了一种用于加热在处理室中具有基板的半导体制造装置的处理室内的部件并在基板上进行处理的方法。 该加热方法包括产生由设置在处理室外部的加热光源产生的加热灯，并且具有能够通过处理室中的第一部分并被吸收到处理室中的第二部分中的波长带 与第一部分不同的材料，并且通过使加热灯通过处理室中的第一部分并且将加热灯照射到处理室中的第二部分来加热处理室中的第二部分。

公开(公告)号：US08523428B2

公开(公告)日：2013-09-03

申请号：US13432617

申请日：2012-03-28

申请人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

IPC分类号： G01K13/00

CPC分类号： G01K11/14 ,  G01K5/48 ,  H01L21/67248

摘要： A component in a processing chamber of a substrate processing apparatus, where a temperature may be accurately measured by using a temperature measuring apparatus using an interference of a low-coherence light, even when a front surface and a rear surface are not parallel due to abrasion, or the like. A focus ring used in a vacuum atmosphere and of which a temperature is measured includes an abrasive surface exposed to an abrasive atmosphere according to plasma, a nonabrasive surface not exposed to the abrasive atmosphere, a thin-walled portion including a top surface and a bottom surface that are parallel to each other, and a coating member coating the top surface of the thin-walled portion, wherein a mirror-like finishing is performed on each of the top and bottom surfaces of the thin-walled portion.

摘要翻译： 在基板处理装置的处理室中的部件，其中即使当前表面和后表面由于磨损而不平行时，也可以通过使用具有低相干光干涉的温度测量装置来精确地测量温度 ，等等。 在真空气氛中使用并且测量温度的聚焦环包括暴露于等离子体的研磨气氛的研磨表面，未暴露于研磨性气氛的非磨损表面，包括顶表面和底部的薄壁部分 表面彼此平行;以及涂覆部件，其涂覆在薄壁部分的顶表面上，其中在薄壁部分的每个顶表面和底表面上执行镜像整理。

公开(公告)号：US08486221B2

公开(公告)日：2013-07-16

申请号：US12700177

申请日：2010-02-04

申请人： Chishio Koshimizu ,  Jun Yamawaku ,  Tatsuo Matsudo ,  Masashi Saito

发明人： Chishio Koshimizu ,  Jun Yamawaku ,  Tatsuo Matsudo ,  Masashi Saito

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H05H1/24 ,  H01J37/32091 ,  H01J37/32522 ,  H01J37/32642 ,  H01J2237/334

摘要： There are provided a method of heating a focus ring and a plasma etching apparatus, capable of simplifying a structure of a heating mechanism without a dummy substrate. The plasma etching apparatus includes a vacuum processing chamber; a lower electrode serving as a mounting table for mounting a substrate thereon; an upper electrode provided to face the lower electrode; a gas supply unit for supplying a processing gas; a high frequency power supply for supplying a high frequency power to the lower electrode to generate a plasma of the processing gas; and a focus ring provided on the lower electrode to surround a periphery of the substrate. In the plasma etching apparatus, the focus ring is heated by irradiating a heating light thereto from a light source provided outside the vacuum processing chamber.

摘要翻译： 提供了一种加热聚焦环和等离子体蚀刻装置的方法，其能够简化没有虚设基板的加热机构的结构。 等离子体蚀刻装置包括真空处理室; 用作将基板安装在其上的安装台的下电极; 设置成面向下电极的上电极; 用于提供处理气体的气体供应单元; 用于向下电极提供高频电力以产生处理气体的等离子体的高频电源; 以及设置在下电极上以围绕基板的周边的聚焦环。 在等离子体蚀刻装置中，通过从设置在真空处理室外侧的光源照射加热光来对聚焦环进行加热。

公开(公告)号：US20100213171A1

公开(公告)日：2010-08-26

申请号：US12700177

申请日：2010-02-04

申请人： Chishio Koshimizu ,  Jun Yamawaku ,  Tatsuo Matsudo ,  Masashi Saito

发明人： Chishio Koshimizu ,  Jun Yamawaku ,  Tatsuo Matsudo ,  Masashi Saito

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H05H1/24 ,  H01J37/32091 ,  H01J37/32522 ,  H01J37/32642 ,  H01J2237/334

摘要： There are provided a method of heating a focus ring and a plasma etching apparatus, capable of simplifying a structure of a heating mechanism without a dummy substrate. The plasma etching apparatus includes a vacuum processing chamber; a lower electrode serving as a mounting table for mounting a substrate thereon; an upper electrode provided to face the lower electrode; a gas supply unit for supplying a processing gas; a high frequency power supply for supplying a high frequency power to the lower electrode to generate a plasma of the processing gas; and a focus ring provided on the lower electrode to surround a periphery of the substrate. In the plasma etching apparatus, the focus ring is heated by irradiating a heating light thereto from a light source provided outside the vacuum processing chamber.

摘要翻译： 提供了一种加热聚焦环和等离子体蚀刻装置的方法，其能够简化没有虚设基板的加热机构的结构。 等离子体蚀刻装置包括真空处理室; 用作安装基板的安装台的下电极; 设置成面向下电极的上电极; 用于提供处理气体的气体供应单元; 用于向下电极提供高频电力以产生处理气体的等离子体的高频电源; 以及设置在下电极上以围绕基板的周边的聚焦环。 在等离子体蚀刻装置中，通过从设置在真空处理室外侧的光源照射加热光来对聚焦环进行加热。

公开(公告)号：US20120176692A1

公开(公告)日：2012-07-12

申请号：US13344926

申请日：2012-01-06

申请人： Jun Yamawaku ,  Chishio Koshimizu

发明人： Jun Yamawaku ,  Chishio Koshimizu

IPC分类号： G02B7/04 ,  H01L21/306

CPC分类号： H01J37/32642 ,  H01J37/32724

摘要： There is provided a focus ring that is capable of preventing deposits from adhering to a member having a lower temperature in a gap between two members having different temperatures. A focus ring 25 is disposed to surround a peripheral portion of a wafer W in a chamber 11 of a substrate processing apparatus 10. The focus ring 25 includes an inner focus ring 25a and an outer focus ring 25b. Here, the inner focus ring 25a is placed adjacent to the wafer W and configured to be cooled; and the outer focus ring 25b is placed so as to surround the inner focus ring 25a and configured not to be cooled. Further, a block member 25c is provided in a gap between the inner focus ring 25a and the outer focus ring 25b.

摘要翻译： 提供了一种聚焦环，其能够防止沉积物粘附到具有不同温度的两个构件之间的间隙中具有较低温度的构件。 焦点环25设置成围绕基板处理装置10的腔室11中的晶片W的周边部分。聚焦环25包括内聚焦环25a和外聚焦环25b。 这里，内聚焦环25a被放置成与晶片W相邻并被配置为被冷却; 并且外聚焦环25b被放置成围绕内聚焦环25a并且被配置为不被冷却。 此外，在内聚焦环25a和外聚焦环25b之间的间隙中设置有块部件25c。

公开(公告)号：US20110094995A1

公开(公告)日：2011-04-28

申请号：US12913135

申请日：2010-10-27

申请人： Yohei Yamazawa ,  Chishio Koshimizu ,  Masashi Saito ,  Kazuki Denpoh ,  Jun Yamawaku ,  Hachishiro Iizuka

发明人： Yohei Yamazawa ,  Chishio Koshimizu ,  Masashi Saito ,  Kazuki Denpoh ,  Jun Yamawaku ,  Hachishiro Iizuka

IPC分类号： C23F1/08 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  C23F1/00

CPC分类号： H01J37/321 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138

摘要： A plasma processing apparatus includes: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a processing gas to the chamber; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the chamber. The apparatus further includes a correction coil, provided at a position outside the chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution in the chamber; and an antenna-coil distance control unit for controlling a distance between the RF antenna and the correction coil while supporting the correction coil substantially in parallel with the RF antenna.

摘要翻译： 一种等离子体处理装置，包括：包括电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 基板支撑单元，设置在所述室中，用于在其上安装目标基板; 处理气体供应单元，用于将处理气体供应到所述室; 以及RF电源单元，用于向RF天线提供RF功率，以通过腔室中的感应耦合产生处理气体的等离子体。 该装置还包括校正线圈，其设置在室外的位置处，其中校正线圈将通过电磁感应与RF天线耦合，用于控制腔室中的等离子体密度分布; 以及天线线圈距离控制单元，用于在支撑基本上与RF天线并联的校正线圈的同时控制RF天线和校正线圈之间的距离。