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    METHOD FOR PRODUCING RUTHENIUM COMPOUND
    3.
    发明申请
    METHOD FOR PRODUCING RUTHENIUM COMPOUND 有权
    生产钌化合物的方法

    公开(公告)号：US20120101290A1

    公开(公告)日：2012-04-26

    申请号：US13279957

    申请日：2011-10-24

    申请人： Ryuuichi SAITOU ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai ,  Sanshiro Komiya ,  Naoto Noda ,  Maki Nishiguchi

    发明人： Ryuuichi SAITOU ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai ,  Sanshiro Komiya ,  Naoto Noda ,  Maki Nishiguchi

    IPC分类号： C07F15/00

    CPC分类号： C07F17/02 ,  C07F15/0046 ,  C07F15/0053

    摘要： A method for producing ruthenium compound including the step of reacting a compound represented by General Formula (1): RuL02 (wherein L0 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds) with trifluorophosphine or reacting the compound represented by General Formula (1) with trifluorophosphine, and hydrogen or a halogen to obtain a compound represented by General Formula (2): Ru(PF3)l(L1)m(L2)n (wherein L1 represents a hydrogen atom or halogen atom, L2 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds, 1 is an integer from 1 to 5, m is an integer from 0 to 4, and n is an integer from 0 to 2, provided that l+m+2n=5 or 6). With this method, a trifluorophosphine-ruthenium compound can be synthesized under low-temperature and low-pressure conditions.

    摘要翻译： 一种制备钌化合物的方法，包括使通式（1）表示的化合物：RuL02（其中L0表示具有4-10个碳原子和至少两个双键的不饱和烃化合物）与三氟化膦反应的步骤或使表示的化合物 通式（1）表示的化合物和氢或卤素，得到通式（2）表示的化合物：Ru（PF 3）l（L1）m（L2）n（其中，L 1表示氢原子或卤素原子， L2表示具有4至10个碳原子和至少两个双键的不饱和烃化合物，1是1至5的整数，m是0至4的整数，n是0至2的整数，条件是l + m + 2n = 5或6）。 通过该方法，可以在低温低压条件下合成三氟化膦 - 钌化合物。

    Method for producing ruthenium compound
    4.
    发明授权
    Method for producing ruthenium compound 有权
    钌化合物的制备方法

    公开(公告)号：US08278471B2

    公开(公告)日：2012-10-02

    申请号：US13279957

    申请日：2011-10-24

    申请人： Ryuuichi Saitou ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai ,  Sanshiro Komiya ,  Naoto Noda ,  Maki Nishiguchi

    发明人： Ryuuichi Saitou ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai ,  Sanshiro Komiya ,  Naoto Noda ,  Maki Nishiguchi

    IPC分类号： C07F15/00

    CPC分类号： C07F17/02 ,  C07F15/0046 ,  C07F15/0053

    摘要： A method for producing ruthenium compound including the step of reacting a compound represented by General Formula (1): RuL02 (wherein L0 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds) with trifluorophosphine or reacting the compound represented by General Formula (1) with trifluorophosphine, and hydrogen or a halogen to obtain a compound represented by General Formula (2): Ru(PF3)l(L1)m(L2)n (wherein L1 represents a hydrogen atom or halogen atom, L2 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds, l is an integer from 1 to 5, m is an integer from 0 to 4, and n is an integer from 0 to 2, provided that l+m+2n=5 or 6). With this method, a trifluorophosphine-ruthenium compound can be synthesized under low-temperature and low-pressure conditions.

    摘要翻译： 一种制备钌化合物的方法，包括使通式（1）表示的化合物：RuL02（其中L0表示具有4-10个碳原子和至少两个双键的不饱和烃化合物）与三氟化膦反应的步骤或使表示的化合物 通式（1）表示的化合物和氢或卤素，得到通式（2）表示的化合物：Ru（PF 3）l（L1）m（L2）n（其中，L 1表示氢原子或卤素原子， L2表示具有4-10个碳原子和至少两个双键的不饱和烃化合物，l是1至5的整数，m是0-4的整数，n是0-2的整数，条件是l + m + 2n = 5或6）。 通过该方法，可以在低温低压条件下合成三氟化膦 - 钌化合物。

    Ruthenium film-forming material and ruthenium film-forming method
    5.
    发明授权
    Ruthenium film-forming material and ruthenium film-forming method 有权
    钌成膜材料和钌膜形成方法

    公开(公告)号：US08999442B2

    公开(公告)日：2015-04-07

    申请号：US13503899

    申请日：2010-10-20

    申请人： Ryuichi Saito ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai

    发明人： Ryuichi Saito ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai

    IPC分类号： B05D1/30 ,  B05D1/02 ,  B05D5/00 ,  B05D7/00 ,  B28B19/00 ,  B29B15/10 ,  C23C18/00 ,  C23C20/00 ,  C23C28/00 ,  C23C16/18 ,  C07C49/92 ,  C07F15/00 ,  C23C16/00 ,  H01L21/768 ,  H01L49/02

    CPC分类号： C23C16/18 ,  C07C49/92 ,  C07F15/0046 ,  H01L21/76843 ,  H01L28/65

    摘要： Disclosed is a ruthenium film-forming material having a lower melting point and a higher vapor pressure that facilitates supply of the material onto a base and moreover enables a high-quality ruthenium film to be obtained.A ruthenium film-forming material includes a compound represented by general formula (1) below (wherein R1 is independently at each occurrence a hydrogen atom, a halogen atom, a hydrocarbon group having 1 to 4 carbon atoms or a halogenated hydrocarbon group having 1 to 4 carbon atoms; R2 is independently at each occurrence a halogenated hydrocarbon group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms or a halogenated alkoxy group having 1 to 4 carbon atoms, with the proviso that R1 and R2 are mutually differing groups; R3 is independently at each occurrence a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms; and L is an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and having at least two double bonds).

    摘要翻译： 公开了一种具有较低熔点和较高蒸气压的钌膜形成材料，其有助于将材料供应到基底上，并且还能够获得高质量的钌膜。 钌膜形成材料包括由下述通式（1）表示的化合物（其中R 1在每次出现时独立地为氢原子，卤素原子，具有1至4个碳原子的烃基或卤代烃基，其具有1至 4个碳原子; R 2在每次出现时独立地为具有1至4个碳原子的卤代烃基，具有1至4个碳原子的烷氧基或具有1至4个碳原子的卤代烷氧基，条件是R 1和R 2为 相互不同的基团; R 3在每次出现时独立地为氢原子或具有1至4个碳原子的烃基; L为具有4至10个碳原子且具有至少两个双键的不饱和烃化合物）。

    Storage systems
    7.
    发明申请
    Storage systems 审中-公开
    存储系统

    公开(公告)号：US20070011939A1

    公开(公告)日：2007-01-18

    申请号：US11181223

    申请日：2005-07-13

    申请人： Tatsuya Sakai

    发明人： Tatsuya Sakai

    IPC分类号： A01K97/06

    CPC分类号： A01K97/06

    摘要： A storage system for storing a plurality of hooked objects is provided. The storage system comprises at least one chamber having side walls and guide members disposed on the chamber side walls. The storage system further comprises partition members disposed in the chamber, the partition member comprising a body having apertures to support at least one hooked object. The partition members are supported in the chamber by at least one guide member in a substantially vertical position. A plurality of guide members may be disposed on the opposing side walls of the chamber, such that adjacent partition members may be positioned in the chamber at varying relative distances from one another to form compartments of varying sizes.

    摘要翻译： 提供了一种用于存储多个钩状物体的存储系统。 存储系统包括至少一个室，其具有设置在室侧壁上的侧壁和引导构件。 存储系统还包括设置在室中的分隔构件，分隔构件包括具有孔的主体以支撑至少一个钩状物体。 分隔构件通过至少一个引导构件在大致垂直的位置被支撑在腔室中。 多个引导构件可以设置在腔室的相对侧壁上，使得相邻的分隔构件可以以彼此变化的相对距离定位在腔室中，以形成不同大小的隔间。

    Cycloolefin addition copolymer and optical transparent material
    8.
    发明授权
    Cycloolefin addition copolymer and optical transparent material 有权
    环烯烃加成共聚物和光学透明材料

    公开(公告)号：US07015293B2

    公开(公告)日：2006-03-21

    申请号：US10515189

    申请日：2003-05-14

    申请人： Noboru Oshima ,  Tatsuya Sakai ,  Kenzo Ohkita ,  Takashi Tsubouchi

    发明人： Noboru Oshima ,  Tatsuya Sakai ,  Kenzo Ohkita ,  Takashi Tsubouchi

    IPC分类号： C08F232/08

    CPC分类号： C08F232/08 ,  C08F8/04 ,  Y10T428/31663 ,  Y10T428/31938

    摘要： A cyclic olefin addition copolymer obtained by copolymerizing a cyclic olefin compound having a side chain substituent group with a ring structure, such as endo-tricyclo[4.3.0.12,5]deca-3,7-diene or endo-tricyclo[4.3.0.12,5]deca-3-ene, with another cyclic olefin compound such as bicyclo[2.2.1]hept-2-ene, and further with a cyclic olefin compound having a hydrolysable silyl group as needed, or hydrogenating after copolymerization; a composition for crosslinking in which a specific crosslinking agent is incorporated; a crosslinked product obtained by crosslinking the composition; an optical material containing the copolymer, the composition or the crosslinked product; and a method for producing the copolymer in which addition polymerization is conducted using a specific nickel catalyst.

    摘要翻译： 通过使具有侧链取代基的环状烯烃化合物与环结构共聚获得的环状烯烃加成共聚物，例如内三环[4.3.0.1 2,5]癸-3,7-二烯 或内三环[4.3.0.1 2,5]癸-3-烯与另一种环状烯烃化合物如双环[2.2.1]庚-2-烯，还有环烯烃 需要时具有可水解甲硅烷基的化合物，或共聚后氢化; 其中掺入特定交联剂的交联用组合物; 通过交联组合物获得的交联产物; 含有共聚物，组合物或交联产物的光学材料; 以及使用特定的镍催化剂进行加成聚合的共聚物的制造方法。

    Chemical vapor deposition material and chemical vapor deposition
    9.
    发明授权
    Chemical vapor deposition material and chemical vapor deposition 有权
    化学气相沉积材料和化学气相沉积

    公开(公告)号：US07002033B1

    公开(公告)日：2006-02-21

    申请号：US11187982

    申请日：2005-07-25

    申请人： Tatsuya Sakai ,  Sachiko Hashimoto ,  Yasuo Matsuki

    发明人： Tatsuya Sakai ,  Sachiko Hashimoto ,  Yasuo Matsuki

    IPC分类号： C07F15/00 ,  C23C16/00

    CPC分类号： C23C16/18 ,  C07F15/0053

    摘要： A chemical vapor deposition material comprising a ruthenium compound having a ligand represented by the following formula: wherein R1, R2 and R3 are each independently a hydrogen atom, fluorine atom, trifluoromethyl group or hydrocarbon group having 1 to 10 carbon atoms, and a method of forming a ruthenium film from the chemical vapor deposition material by chemical vapor deposition. A high-quality ruthenium film even when it is very thin can be obtained.

    摘要翻译： 一种化学气相沉积材料，其包含具有由下式表示的配位体的钌化合物：化学式id =“CHEM-US-00001”num =“000

    CHEMICAL VAPOR DEPOSITION MATERIAL AND CHEMICAL VAPOR DEPOSITION
    10.
    发明申请
    CHEMICAL VAPOR DEPOSITION MATERIAL AND CHEMICAL VAPOR DEPOSITION 有权
    化学蒸气沉积物和化学气相沉积

    公开(公告)号：US20060024443A1

    公开(公告)日：2006-02-02

    申请号：US11187982

    申请日：2005-07-25

    申请人： Tatsuya Sakai ,  Sachiko Hashimoto ,  Yasuo Matsuki

    发明人： Tatsuya Sakai ,  Sachiko Hashimoto ,  Yasuo Matsuki

    IPC分类号： C07F15/00 ,  C23C16/00

    CPC分类号： C23C16/18 ,  C07F15/0053

    摘要： A chemical vapor deposition material comprising a ruthenium compound having a ligand represented by the following formula: wherein R1, R2 and R3 are each independently a hydrogen atom, fluorine atom, trifluoromethyl group or hydrocarbon group having 1 to 10 carbon atoms, and a method of forming a ruthenium film from the chemical vapor deposition material by chemical vapor deposition. A high-quality ruthenium film even when it is very thin can be obtained.

    摘要翻译： 一种化学气相沉积材料，其包含具有由下式表示的配体的钌化合物：其中R 1，R 2和R 3各自为 独立地为氢原子，氟原子，三氟甲基或碳原子数为1〜10的烃基，以及通过化学气相沉积从化学气相沉积材料形成钌膜的方法。 即使非常薄也可以获得高质量的钌膜。