公开(公告)号：US08999442B2

公开(公告)日：2015-04-07

申请号：US13503899

申请日：2010-10-20

申请人： Ryuichi Saito ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai

发明人： Ryuichi Saito ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai

IPC分类号： B05D1/30 ,  B05D1/02 ,  B05D5/00 ,  B05D7/00 ,  B28B19/00 ,  B29B15/10 ,  C23C18/00 ,  C23C20/00 ,  C23C28/00 ,  C23C16/18 ,  C07C49/92 ,  C07F15/00 ,  C23C16/00 ,  H01L21/768 ,  H01L49/02

CPC分类号： C23C16/18 ,  C07C49/92 ,  C07F15/0046 ,  H01L21/76843 ,  H01L28/65

摘要： Disclosed is a ruthenium film-forming material having a lower melting point and a higher vapor pressure that facilitates supply of the material onto a base and moreover enables a high-quality ruthenium film to be obtained.A ruthenium film-forming material includes a compound represented by general formula (1) below (wherein R1 is independently at each occurrence a hydrogen atom, a halogen atom, a hydrocarbon group having 1 to 4 carbon atoms or a halogenated hydrocarbon group having 1 to 4 carbon atoms; R2 is independently at each occurrence a halogenated hydrocarbon group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms or a halogenated alkoxy group having 1 to 4 carbon atoms, with the proviso that R1 and R2 are mutually differing groups; R3 is independently at each occurrence a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms; and L is an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and having at least two double bonds).

摘要翻译： 公开了一种具有较低熔点和较高蒸气压的钌膜形成材料，其有助于将材料供应到基底上，并且还能够获得高质量的钌膜。 钌膜形成材料包括由下述通式（1）表示的化合物（其中R 1在每次出现时独立地为氢原子，卤素原子，具有1至4个碳原子的烃基或卤代烃基，其具有1至 4个碳原子; R 2在每次出现时独立地为具有1至4个碳原子的卤代烃基，具有1至4个碳原子的烷氧基或具有1至4个碳原子的卤代烷氧基，条件是R 1和R 2为 相互不同的基团; R 3在每次出现时独立地为氢原子或具有1至4个碳原子的烃基; L为具有4至10个碳原子且具有至少两个双键的不饱和烃化合物）。

公开(公告)号：US20120282414A1

公开(公告)日：2012-11-08

申请号：US13503899

申请日：2010-10-20

申请人： Ryuichi Saito ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai

发明人： Ryuichi Saito ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai

IPC分类号： C07F15/00 ,  B05D3/02 ,  B05D3/06 ,  B05D7/24

CPC分类号： C23C16/18 ,  C07C49/92 ,  C07F15/0046 ,  H01L21/76843 ,  H01L28/65

摘要： Disclosed is a ruthenium film-forming material having a lower melting point and a higher vapor pressure that facilitates supply of the material onto a base and moreover enables a high-quality ruthenium film to be obtained.A ruthenium film-forming material includes a compound represented by general formula (1) below (wherein R1 is independently at each occurrence a hydrogen atom, a halogen atom, a hydrocarbon group having 1 to 4 carbon atoms or a halogenated hydrocarbon group having 1 to 4 carbon atoms; R2 is independently at each occurrence a halogenated hydrocarbon group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms or a halogenated alkoxy group having 1 to 4 carbon atoms, with the proviso that R1 and R2 are mutually differing groups; R3 is independently at each occurrence a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms; and L is an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and having at least two double bonds).

摘要翻译： 公开了一种具有较低熔点和较高蒸气压的钌膜形成材料，其有助于将材料供应到基底上，并且还能够获得高质量的钌膜。 钌膜形成材料包括由下述通式（1）表示的化合物（其中R 1在每次出现时独立地为氢原子，卤素原子，具有1至4个碳原子的烃基或卤代烃基，其具有1至 4个碳原子; R 2在每次出现时独立地为具有1至4个碳原子的卤代烃基，具有1至4个碳原子的烷氧基或具有1至4个碳原子的卤代烷氧基，条件是R 1和R 2为 相互不同的基团; R 3在每次出现时独立地为氢原子或具有1至4个碳原子的烃基; L为具有4至10个碳原子且具有至少两个双键的不饱和烃化合物）。

公开(公告)号：US20120101290A1

公开(公告)日：2012-04-26

申请号：US13279957

申请日：2011-10-24

申请人： Ryuuichi SAITOU ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai ,  Sanshiro Komiya ,  Naoto Noda ,  Maki Nishiguchi

发明人： Ryuuichi SAITOU ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai ,  Sanshiro Komiya ,  Naoto Noda ,  Maki Nishiguchi

IPC分类号： C07F15/00

CPC分类号： C07F17/02 ,  C07F15/0046 ,  C07F15/0053

摘要： A method for producing ruthenium compound including the step of reacting a compound represented by General Formula (1): RuL02 (wherein L0 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds) with trifluorophosphine or reacting the compound represented by General Formula (1) with trifluorophosphine, and hydrogen or a halogen to obtain a compound represented by General Formula (2): Ru(PF3)l(L1)m(L2)n (wherein L1 represents a hydrogen atom or halogen atom, L2 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds, 1 is an integer from 1 to 5, m is an integer from 0 to 4, and n is an integer from 0 to 2, provided that l+m+2n=5 or 6). With this method, a trifluorophosphine-ruthenium compound can be synthesized under low-temperature and low-pressure conditions.

摘要翻译： 一种制备钌化合物的方法，包括使通式（1）表示的化合物：RuL02（其中L0表示具有4-10个碳原子和至少两个双键的不饱和烃化合物）与三氟化膦反应的步骤或使表示的化合物 通式（1）表示的化合物和氢或卤素，得到通式（2）表示的化合物：Ru（PF 3）l（L1）m（L2）n（其中，L 1表示氢原子或卤素原子， L2表示具有4至10个碳原子和至少两个双键的不饱和烃化合物，1是1至5的整数，m是0至4的整数，n是0至2的整数，条件是l + m + 2n = 5或6）。 通过该方法，可以在低温低压条件下合成三氟化膦 - 钌化合物。

公开(公告)号：US08278471B2

公开(公告)日：2012-10-02

申请号：US13279957

申请日：2011-10-24

申请人： Ryuuichi Saitou ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai ,  Sanshiro Komiya ,  Naoto Noda ,  Maki Nishiguchi

发明人： Ryuuichi Saitou ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai ,  Sanshiro Komiya ,  Naoto Noda ,  Maki Nishiguchi

IPC分类号： C07F15/00

CPC分类号： C07F17/02 ,  C07F15/0046 ,  C07F15/0053

摘要： A method for producing ruthenium compound including the step of reacting a compound represented by General Formula (1): RuL02 (wherein L0 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds) with trifluorophosphine or reacting the compound represented by General Formula (1) with trifluorophosphine, and hydrogen or a halogen to obtain a compound represented by General Formula (2): Ru(PF3)l(L1)m(L2)n (wherein L1 represents a hydrogen atom or halogen atom, L2 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds, l is an integer from 1 to 5, m is an integer from 0 to 4, and n is an integer from 0 to 2, provided that l+m+2n=5 or 6). With this method, a trifluorophosphine-ruthenium compound can be synthesized under low-temperature and low-pressure conditions.

摘要翻译： 一种制备钌化合物的方法，包括使通式（1）表示的化合物：RuL02（其中L0表示具有4-10个碳原子和至少两个双键的不饱和烃化合物）与三氟化膦反应的步骤或使表示的化合物 通式（1）表示的化合物和氢或卤素，得到通式（2）表示的化合物：Ru（PF 3）l（L1）m（L2）n（其中，L 1表示氢原子或卤素原子， L2表示具有4-10个碳原子和至少两个双键的不饱和烃化合物，l是1至5的整数，m是0-4的整数，n是0-2的整数，条件是l + m + 2n = 5或6）。 通过该方法，可以在低温低压条件下合成三氟化膦 - 钌化合物。

公开(公告)号：US08508883B2

公开(公告)日：2013-08-13

申请号：US13613106

申请日：2012-09-13

申请人： Takehito Tamaoka ,  Shuji Iwasaki ,  Yoichi Sekii ,  Hideki Nishimura

发明人： Takehito Tamaoka ,  Shuji Iwasaki ,  Yoichi Sekii ,  Hideki Nishimura

IPC分类号： G11B17/02 ,  H02K7/08

CPC分类号： G11B19/2009 ,  F16C17/107 ,  F16C33/745 ,  F16C2370/12 ,  H02K5/1677

摘要： A motor includes a shaft portion, an upper plate cylindrical portion, a lower plate cylindrical portion, and a sleeve portion disposed between an upper plate portion and a lower plate portion. The sleeve portion includes an inner sleeve cylindrical portion and an outer sleeve cylindrical portion. An upper seal portion is arranged between the outer circumferential surface of the upper plate cylindrical portion and the inner circumferential surface of the outer sleeve cylindrical portion. A lower seal portion is arranged between the outer circumferential surface of the outer sleeve cylindrical portion and the inner circumferential surface of the lower plate cylindrical portion. At least a portion of the upper seal portion and at least a portion of the lower seal portion radially overlap with a radial gap between the outer circumferential surface of the shaft portion and the inner circumferential surface of the inner sleeve cylindrical portion.

摘要翻译： 电动机包括轴部，上板圆筒部，下板圆筒部和设置在上板部和下板部之间的套筒部。 套筒部分包括内套筒部分和外套筒部分。 在上板圆筒部的外周面与外套筒筒部的内周面之间配置有上密封部。 在外筒筒部的外周面与下板圆筒部的内周面之间配置有下密封部。 上密封部分的至少一部分和下密封部分的至少一部分径向地与轴部的外圆周表面和内套筒圆筒部分的内圆周表面之间的径向间隙重叠。

公开(公告)号：US20110236583A1

公开(公告)日：2011-09-29

申请号：US13131485

申请日：2009-11-25

申请人： Hideki Nishimura ,  Kouji Sumiya ,  Yasuo Matsuki

发明人： Hideki Nishimura ,  Kouji Sumiya ,  Yasuo Matsuki

IPC分类号： C09D1/00 ,  B65D6/40 ,  B05D1/40

CPC分类号： C01G51/02 ,  C23C16/16 ,  C23C16/4481 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76873

摘要： A container containing a cobalt carbonyl complex and a gas that contains carbon monoxide, and a cobalt carbonyl complex composition comprising a cobalt carbonyl complex and a solvent, wherein the concentration of carbon monoxide dissolved in the solvent is 0.001 to 1 wt %.Since the cobalt carbonyl complex contained in the above container or the above composition can retain its sublimation properties for a long time without being converted into a stable complex, when a cobalt film is formed by chemical vapor deposition using the container and the composition, a high-quality film can be formed by a simple process, and the production cost of the cobalt film can be reduced due to high use efficiency of the precursor.

摘要翻译： 含有羰基钴络合物和含有一氧化碳的气体的容器，以及包含羰基钴络合物和溶剂的羰基钴络合物组合物，其中溶解在溶剂中的一氧化碳的浓度为0.001〜1重量％。 由于上述容器中所含的羰基钴络合物或上述组合物长时间保持其升华性能而不会转化成稳定的络合物，所以当通过使用容器和组合物的化学气相沉积形成钴膜时， 可以通过简单的工艺形成均质膜，并且由于前体的高使用效率，可以降低钴膜的制造成本。

公开(公告)号：US08020315B2

公开(公告)日：2011-09-20

申请号：US11896936

申请日：2007-09-06

申请人： Hideki Nishimura ,  Mikio Nakashima

发明人： Hideki Nishimura ,  Mikio Nakashima

IPC分类号： F26B11/00

CPC分类号： H01L21/67109 ,  H01L21/02052 ,  H01L21/67034 ,  H01L21/67248

摘要： A substrate processing method which can reduce the number of particles to be left on each substrate is provided. In the substrate processing method, substrates W to be processed are dried, by using a fluid heated by a heating apparatus having one or more heating mechanisms. The substrate processing method comprises a first step of supplying a mixed fluid containing a gas and a processing liquid and heated by the heating apparatus, into a processing chamber in which the substrates to be processed are placed, and a second step of supplying the heated gas into the processing chamber. The output of at least one of the heating mechanisms is kept at a preset constant value for a period of time during which a predetermined time passes after the start of the first step. In the second step, the output of the heating mechanism is determined under a feed back control.

摘要翻译： 提供了可以减少要留在每个基板上的颗粒数量的基板处理方法。 在基板处理方法中，通过使用由具有一个或多个加热机构的加热装置加热的流体来干燥待加工的基板W. 基板处理方法包括：第一步骤，将含有气体和处理液体的混合流体供给并被加热装置加热到其中放置待处理基板的处理室中;以及第二步骤， 进入处理室。 至少一个加热机构的输出在第一步骤开始之后的预定时间过去的一段时间内保持在预设的恒定值。 在第二步骤中，在反馈控制下确定加热机构的输出。

公开(公告)号：US07825778B2

公开(公告)日：2010-11-02

申请号：US11344064

申请日：2006-02-01

申请人： Hideki Nishimura ,  Syunichi Yamashita

发明人： Hideki Nishimura ,  Syunichi Yamashita

IPC分类号： H04B3/36

CPC分类号： G06F3/016

摘要： In an electronic apparatus having a touch panel and pair of vibrating elements for vibrating the touch panel, pair of fixing cushions are fixed on a rear surface of the touch panel along right and left edges of the touch panel. The vibrating elements are fixed to the rear surface of the touch panel along upper and lower edges of the touch panel. The fixing cushions are also fixed to a fixing frames and thereby the touch panel is supported by the fixing frame. The fixing cushions are parallel to each other and stably support the touch panel against the fixing frame. Furthermore, the cushions allow the touch panel to greatly vibrate according to expansion and contraction of the vibrating elements.

摘要翻译： 在具有用于使触摸面板振动的触摸面板和一对振动元件的电子设备中，一对固定垫沿触摸面板的左右边缘固定在触摸面板的后表面上。 振动元件沿着触摸面板的上边缘和下边缘固定到触摸面板的后表面。 固定垫也固定在固定框架上，由此触摸面板由固定框支撑。 固定垫彼此平行并且将触摸面板稳定地支撑在固定框架上。 此外，垫子允许触摸面板根据振动元件的膨胀和收缩而大大振动。

公开(公告)号：US07578621B2

公开(公告)日：2009-08-25

申请号：US11926345

申请日：2007-10-29

申请人： Hideki Nishimura ,  Yoshito Oku

发明人： Hideki Nishimura ,  Yoshito Oku

IPC分类号： F16C32/06

CPC分类号： F16C33/107 ,  F16C17/045 ,  F16C17/107 ,  F16C33/745 ,  F16C41/008 ,  F16C2370/12 ,  H02K7/085

摘要： A fluid dynamic-pressure bearing includes a rotatable shaft, a hub, a fixed portion, and a lubricating liquid. The hub includes a hub thrust bearing surface extending from the shaft outwardly in a radial direction and an annular surface. The fixed portion includes a fixed-portion upper thrust bearing surface facing the hub thrust surface and a flange surface facing the annular surface. The hub thrust bearing surface, the fixed-portion upper thrust bearing surface, and the lubricating liquid arranged therebetween form together an upper thrust dynamic-pressure bearing. The annular surface and the flange surface define an annular gap therebetween. An axial dimension of the annular gap is larger than a total of an axial dimension of an upper thrust gap between the hub thrust bearing surface and the fixed-portion upper thrust bearing surface and an average depth of upper thrust dynamic-pressure generating grooves of the upper thrust dynamic-pressure bearing.

摘要翻译： 流体动压轴承包括可旋转轴，轮毂，固定部分和润滑液体。 轮毂包括从轴向径向延伸的轮毂止推轴承表面和环形表面。 固定部分包括面向轮毂止推表面的固定部分上止推轴承表面和面向环形表面的凸缘表面。 轮毂止推轴承表面，固定部分上推力轴承表面和布置在其间的润滑液形成上推力动压轴承。 环形表面和凸缘表面之间形成环形间隙。 环形间隙的轴向尺寸大于轮毂止推轴承表面和固定部分上推力轴承表面之间的上推力间隙的轴向尺寸的总和和上推力动压产生槽的平均深度 上推力动压轴承。

公开(公告)号：US20090049208A1

公开(公告)日：2009-02-19

申请号：US12188733

申请日：2008-08-08

申请人： Hideki Nishimura ,  Yoshiaki Kinoshita

发明人： Hideki Nishimura ,  Yoshiaki Kinoshita

IPC分类号： G06F3/00

CPC分类号： G06F13/385

摘要： When USB communication between a host computer and media processing device is interrupted while processing media, sending useless read data to the host computer is prevented. A control method for a media processing device 1 that is connected by a USB cable to a host computer 30, reads information continuously from a plurality of slips S according to instructions from the host computer 30, and sends the read information to the host computer 30 has steps of monitoring the communication state between the host computer 30 and the media processing device 1, interrupting the continuous reading process by executing a software reset process when communication becomes disabled while the continuous reading process is running (step S25 returns Yes), and deleting read data that has not been sent to the host computer 30 (step S26).

摘要翻译： 当主机和媒体处理设备之间的USB通信在处理媒体时中断时，防止向主机发送无用的读取数据。 通过USB电缆连接到主计算机30的媒体处理设备1的控制方法，根据来自主计算机30的指令从多个单据S连续地读取信息，并将读取的信息发送到主计算机30 具有监视主计算机30和媒体处理装置1之间的通信状态的步骤，通过在连续读取处理正在运行时通信失效时执行软件复位处理来中断连续读取处理（步骤S25：是） 读取尚未发送到主机30的数据（步骤S26）。