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公开(公告)号：US07859112B2
公开(公告)日：2010-12-28
申请号：US11331951
申请日：2006-01-13
申请人： Terry McDaniel , James Green , Mark Fischer
发明人： Terry McDaniel , James Green , Mark Fischer
IPC分类号： H01L23/52
CPC分类号： H01L27/105 , H01L21/823475 , H01L21/823871 , H01L27/1052 , H01L27/10894 , H01L27/10897 , H01L27/11531 , H01L29/66545
摘要： Memory devices, such as DRAM memory devices, may include one or more metal layers above a local interconnect of the DRAM memory that make contact to lower gate regions of the memory device. As the size of semiconductor components decreases and circuit densities increase, the density of the metal routing in these upper metal layers becomes increasingly difficult to fabricate. By providing additional metal routing in the lower gate regions that may be coupled to the upper metal layers, the spacing requirements of the upper metal layers may be eased, while maintaining the size of the semiconductor device. In addition, the additional metal routing formed in the gate regions of the memory devices may be disposed parallel to other metal contacts in a strapping configuration, thus reducing a resistance of the metal contacts, such as buried digit lines of a DRAM memory cell.
摘要翻译： 诸如DRAM存储器件的存储器件可以包括与存储器件的下部栅极区域接触的DRAM存储器的局部互连上方的一个或多个金属层。 随着半导体元件的尺寸减小和电路密度增加，这些上层金属层中的金属布线的密度越来越难于制造。 通过在可以耦合到上金属层的下栅极区域中提供额外的金属布线，可以在保持半导体器件的尺寸的同时，缓和上金属层的间隔要求。 此外，形成在存储器件的栅极区域中的附加金属布线可以以带状构造平行于其它金属触点设置，从而减小金属触点（例如DRAM存储单元的埋置数字线）的电阻。
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2.发明申请Systems and methods for forming additional metal routing in semiconductor devices 有权用于在半导体器件中形成附加金属布线的系统和方法公开(公告)号：US20070164372A1
公开(公告)日：2007-07-19
申请号：US11331951
申请日：2006-01-13
申请人： Terry McDaniel , James Green , Mark Fischer
发明人： Terry McDaniel , James Green , Mark Fischer
IPC分类号： H01L29/76
CPC分类号： H01L27/105 , H01L21/823475 , H01L21/823871 , H01L27/1052 , H01L27/10894 , H01L27/10897 , H01L27/11531 , H01L29/66545
摘要： Memory devices, such as DRAM memory devices, may include one or more metal layers above a local interconnect of the DRAM memory that make contact to lower gate regions of the memory device. As the size of semiconductor components decreases and circuit densities increase, the density of the metal routing in these upper metal layers becomes increasingly difficult to fabricate. By providing additional metal routing in the lower gate regions that may be coupled to the upper metal layers, the spacing requirements of the upper metal layers may be eased, while maintaining the size of the semiconductor device. In addition, the additional metal routing formed in the gate regions of the memory devices may be disposed parallel to other metal contacts in a strapping configuration, thus reducing a resistance of the metal contacts, such as buried digit lines of a DRAM memory cell.
摘要翻译： 诸如DRAM存储器件的存储器件可以包括与存储器件的下部栅极区域接触的DRAM存储器的局部互连上方的一个或多个金属层。 随着半导体元件的尺寸减小和电路密度增加，这些上层金属层中的金属布线的密度越来越难于制造。 通过在可以耦合到上金属层的下栅极区域中提供额外的金属布线，可以在保持半导体器件的尺寸的同时，缓和上金属层的间隔要求。 此外，形成在存储器件的栅极区域中的附加金属布线可以以带状构造平行于其它金属触点设置，从而减小金属触点（例如DRAM存储单元的埋置数字线）的电阻。
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公开(公告)号：US20110086470A1
公开(公告)日：2011-04-14
申请号：US12972232
申请日：2010-12-17
申请人： Terry McDaniel , James Green , Mark Fischer
发明人： Terry McDaniel , James Green , Mark Fischer
IPC分类号： H01L21/8229
CPC分类号： H01L27/105 , H01L21/823475 , H01L21/823871 , H01L27/1052 , H01L27/10894 , H01L27/10897 , H01L27/11531 , H01L29/66545
摘要： Memory devices, such as DRAM memory devices, may include one or more metal layers above a local interconnect of the DRAM memory that make contact to lower gate regions of the memory device. As the size of semiconductor components decreases and circuit densities increase, the density of the metal routing in these upper metal layers becomes increasingly difficult to fabricate. By providing additional metal routing in the lower gate regions that may be coupled to the upper metal layers, the spacing requirements of the upper metal layers may be eased, while maintaining the size of the semiconductor device. In addition, the additional metal routing formed in the gate regions of the memory devices may be disposed parallel to other metal contacts in a strapping configuration, thus reducing a resistance of the metal contacts, such as buried digit lines of a DRAM memory cell.
摘要翻译： 诸如DRAM存储器件的存储器件可以包括与存储器件的下部栅极区域接触的DRAM存储器的局部互连上方的一个或多个金属层。 随着半导体元件的尺寸减小和电路密度增加，这些上层金属层中的金属布线的密度越来越难于制造。 通过在可以耦合到上金属层的下栅极区域中提供额外的金属布线，可以在保持半导体器件的尺寸的同时，缓和上金属层的间隔要求。 此外，形成在存储器件的栅极区域中的附加金属布线可以以带状构造平行于其它金属触点设置，从而降低金属触点（例如DRAM存储器单元的掩埋数字线）的电阻。
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公开(公告)号：US08674404B2
公开(公告)日：2014-03-18
申请号：US12972232
申请日：2010-12-17
申请人： Terry McDaniel , James Green , Mark Fischer
发明人： Terry McDaniel , James Green , Mark Fischer
IPC分类号： H01L29/66
CPC分类号： H01L27/105 , H01L21/823475 , H01L21/823871 , H01L27/1052 , H01L27/10894 , H01L27/10897 , H01L27/11531 , H01L29/66545
摘要： Memory devices, such as DRAM memory devices, may include one or more metal layers above a local interconnect of the DRAM memory that make contact to lower gate regions of the memory device. As the size of semiconductor components decreases and circuit densities increase, the density of the metal routing in these upper metal layers becomes increasingly difficult to fabricate. By providing additional metal routing in the lower gate regions that may be coupled to the upper metal layers, the spacing requirements of the upper metal layers may be eased, while maintaining the size of the semiconductor device. In addition, the additional metal routing formed in the gate regions of the memory devices may be disposed parallel to other metal contacts in a strapping configuration, thus reducing a resistance of the metal contacts, such as buried digit lines of a DRAM memory cell.
摘要翻译： 诸如DRAM存储器件的存储器件可以包括与存储器件的下部栅极区域接触的DRAM存储器的局部互连上方的一个或多个金属层。 随着半导体元件的尺寸减小和电路密度增加，这些上层金属层中的金属布线的密度越来越难于制造。 通过在可以耦合到上金属层的下栅极区域中提供额外的金属布线，可以在保持半导体器件的尺寸的同时，缓和上金属层的间隔要求。 此外，形成在存储器件的栅极区域中的附加金属布线可以以带状构造平行于其它金属触点设置，从而降低金属触点（例如DRAM存储器单元的掩埋数字线）的电阻。
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公开(公告)号：US20160002910A1
公开(公告)日：2016-01-07
申请号：US14855213
申请日：2015-09-15
申请人： James Green
发明人： James Green
CPC分类号： E04B1/2403 , E04B2001/2415 , E04B2001/2457 , E04C3/07 , F16B7/042 , F16B7/0446 , F16B7/182
摘要： In some embodiments the structural joint includes a first structural member having a first mating face at one end of the first structural member, the first mating face having a two dimensional profile, a second structural member having a second mating face at one end of the second structural member and positioned proximate to the first mating face of the first structural member, the second mating face having a two dimensional profile that is similar to the two dimensional profile of the first mating face, a splice plate secured to the first structural member at the first mating face and removably secured to the second structural member at the second mating face, and fasteners that secure the splice plate to the first structural member and removably attach the splice plate to the second structural member.
摘要翻译： 在一些实施例中，结构接头包括第一结构构件，其在第一结构构件的一端具有第一配合面，第一配合面具有二维轮廓，第二结构构件在第二结构构件的一端具有第二配合面 结构构件并且定位成靠近第一结构构件的第一配合面，第二配合面具有类似于第一配合面的二维轮廓的二维轮廓，在第一配合面处固定到第一结构构件的接合板 第一配合面，并且在第二配合面处可拆卸地固定到第二结构构件;以及紧固件，其将接合板固定到第一结构构件并将接合板可拆卸地附接到第二结构构件。
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公开(公告)号：US20060110621A1
公开(公告)日：2006-05-25
申请号：US10519965
申请日：2003-07-01
申请人： George Brilmyer , Robert Miller , Stella Kotsatos , James Green
发明人： George Brilmyer , Robert Miller , Stella Kotsatos , James Green
CPC分类号： H01M2/0257 , C23C18/08 , H01M2/0275 , H01M2/0285 , H01M2/0287 , H01M2/0292 , H01M6/06 , H01M6/08 , H01M10/24 , Y10T428/30
摘要： Metallic coatings and alloys are deposited by thermally reducing inorganic or organic salts containing one or more metals and/or other cationic species in a reducing atmosphere at elevated temperatures. This environmentally-friendly deposition process enables a wide variety of metal and metal alloy compositions to be formed, including metallic or alloy deposits that could not otherwise be electroplated out of water-based solutions. This thermal reduction process and the deposits produced thereof can be applied onto flat strips, sheets, or plates for subsequent fabrication into components and devices and or onto formed parts as intermediate or final surface treatments, particularly components such as battery cans.
摘要翻译： 通过在还原气氛中在高温下热还原含有一种或多种金属和/或其它阳离子物质的无机或有机盐来沉积金属涂层和合金。 这种环境友好的沉积工艺使得能够形成各种各样的金属和金属合金组合物，包括金属或合金沉积物，其不能以水基溶液电镀。 这种热还原过程及其产生的沉积物可以施加到平板条，板或板上，用于随后制造成部件和装置，或者作为中间或最终表面处理，特别是诸如电池罐的部件。
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公开(公告)号：US06375726B1
公开(公告)日：2002-04-23
申请号：US09702225
申请日：2000-10-31
申请人： Craig Matzdorf , Michael Kane , James Green
发明人： Craig Matzdorf , Michael Kane , James Green
IPC分类号： C23C2205
CPC分类号： C23C22/83 , C09D5/084 , C09D5/12 , C23C22/34 , C23C2222/10
摘要： This invention is for the protection and surface treatment of aluminum, aluminum alloys and coated aluminum substrates against corrosion. The aluminum substrates are treated with an acidic aqueous solution containing small but effective amounts of at least one trivalent chromium salt such as a trivalent chromium sulfate, at least one alkali metal hexafluorazirconate such as potassium hexafluorozirconate in combination with small but effective amounts of at least one water soluble or dispersible thickening agent such as a cellulose compound and at least one water soluble surfactant. The corrosion resistant aluminum substrates of this invention have improved adhesion for overlaying coatings e.g. paints and a lower electrical resistance contact.
摘要翻译： 本发明是为了保护和表面处理铝，铝合金和涂覆的铝基板免受腐蚀。 铝基材用含有少量但有效量的至少一种三价铬盐如三价铬硫酸盐，至少一种六氟氮酸钾碱金属如六氟锆酸钾的酸性水溶液处理，其结合少量但有效量的至少一种 水溶性或分散性增稠剂如纤维素化合物和至少一种水溶性表面活性剂。 本发明的耐腐蚀铝基材具有改善的覆盖涂层的粘合性，例如 油漆和较低的电阻接触。
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公开(公告)号：US20070099022A1
公开(公告)日：2007-05-03
申请号：US11268405
申请日：2005-11-01
IPC分类号： C23C22/34
CPC分类号： C23C22/34 , Y10T428/12757
摘要： Compositions and process for post-treating aluminum and aluminum alloy coated steel substrates to improve the corrosion resistance and adhesive bonding strength of the aluminum coated substrates. The composition comprises treating the aluminum or aluminum alloy coated steel substrates with an acidic aqueous solution comprising, per liter of solution, from about 0.1 to 22 grams of a hexafluorozirconate, from about 0.1 gram up to the solubility limit of a water soluble cationic zinc compound and, optionally, effective amounts of water soluble thickeners and/or surfactants.
摘要翻译： 用于后处理铝和铝合金涂层钢基材的组合物和方法，以改善铝涂布基材的耐腐蚀性和粘合剂粘合强度。 该组合物包括用包含每升溶液的约0.1至22克六氟锆酸盐，约0.1克至水溶性阳离子锌化合物的溶解度极限的酸性水溶液处理铝或铝合金涂覆的钢基材 和任选的有效量的水溶性增稠剂和/或表面活性剂。
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公开(公告)号：US20070095437A1
公开(公告)日：2007-05-03
申请号：US11268406
申请日：2005-11-01
IPC分类号： C23C22/34
CPC分类号： C23C22/34
摘要： Composition and process for coating ferrous alloys to improve the corrosion resistance and adhesive bonding strength of the alloys. The process comprises using the composition for treating the ferrous alloys such as steel with an acidic aqueous solution comprising, per liter of solution, from about 0.1 to 22 grams of hexafluorozirconates, effective amounts of at least one water soluble divalent zinc compound, and 0.0 to 10 grams of water soluble thickeners and/or water soluble surfactants.
摘要翻译： 用于涂覆铁合金以提高合金的耐腐蚀性和粘合强度的组成和工艺。 该方法包括使用该组合物用含有约0.1至22克六氟锆酸盐的酸性水溶液的酸性水溶液，有效量的至少一种水溶性二价锌化合物和0.0至 10克水溶性增稠剂和/或水溶性表面活性剂。
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公开(公告)号：US20060194698A1
公开(公告)日：2006-08-31
申请号：US10541048
申请日：2003-07-15
申请人： Kimberly Gwinn , James Green , Susan Hamilton
发明人： Kimberly Gwinn , James Green , Susan Hamilton
IPC分类号： A01N65/00
CPC分类号： A01N65/00 , A01N65/08 , A01N65/12 , Y02A50/351 , A01N2300/00 , A01N65/22
摘要： The subject invention provides methods for cotrolling weeds, plant pests, or plant pathogens comprising the application of a bioactive herbage (plant material) composition to soil as a soil amendment or as top dressing for potted plants. In certain embodiments, the method of controlling weeds, plant pests, or plant pathogens comprises the application of a bioactive herbage (plant material) composition to soil as a soil amendment or as top dressing for potted plants in amounts sufficient to control weeds, plant pests, or plant pathogens, wherein said bioactive herbage is obtained from: (a) Monarda spp.; (b) Chamaemelum spp.; (c) Matricaria spp.; (d) Chenopodium spp.; or (e) various combinations of thereof. Herbage can be dried or wet and other sources of bioactive herbage are also suitable for use in the subject invention are provided.
摘要翻译： 本发明提供了用于将杂草，植物害虫或植物病原体包围的方法，其包括将生物活性草本（植物材料）组合物施用于土壤中作为土壤修饰物或作为盆栽植物的最佳敷料。 在某些实施方案中，控制杂草，植物害虫或植物病原体的方法包括将生物活性草本（植物材料）组合物施用于土壤中作为土壤修饰物或作为盆栽植物的最佳敷料，其量足以控制杂草，植物害虫 或植物病原体，其中所述生物活性牧草从以下物质获得：（a）Monarda spp。 （b）Chamaemelum spp （c）母菊属 （d）藜属 或（e）其各种组合。 草本可以干燥或湿润，其他生物活性草本来源也适用于本发明。
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