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公开(公告)号：US20050223987A1
公开(公告)日：2005-10-13
申请号：US11054381
申请日：2005-02-10
IPC分类号： C23C16/00 , C23C16/34 , C23C16/40 , C23C16/448 , H01L21/205 , H01L21/31
CPC分类号： C23C16/4486 , C23C16/34 , C23C16/401 , C23C16/405
摘要： A film forming apparatus according to the present invention has a source material supply section, a vaporizer, and a film forming chamber. The vaporizer comprises a nozzle which spays the liquid material supplied from the source material supply section, a vaporization chamber which has one end in which the nozzle opens and a closed other end and in which the misty liquid material sprayed through the nozzle is vaporized to generate the material gas, a heater which heats the vaporization chamber, and an outlet port which opens in the vaporization chamber in the vicinity of the nozzle and through which the material gas is discharged from the vaporization chamber. The closed other end of the vaporization chamber is kept at a long enough distance from the nozzle to allow the liquid source material injected through the nozzle to vaporize.
摘要翻译： 根据本发明的成膜装置具有源材料供给部，蒸发器和成膜室。 蒸发器包括喷嘴，其喷射从源材料供应部分供应的液体材料，蒸发室，其具有喷嘴打开的一端和封闭的另一端，并且其中通过喷嘴喷射的雾状液体材料被蒸发以产生 材料气体，加热蒸发室的加热器和在喷嘴附近在蒸发室中开口的出口，并且材料气体从气化室排出。 蒸发室的封闭的另一端保持与喷嘴足够长的距离，以允许通过喷嘴喷射的液体源材料蒸发。
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公开(公告)号：US20070272154A1
公开(公告)日：2007-11-29
申请号：US10574531
申请日：2004-10-22
申请人： Manabu Amikura , Teruo Iwata
发明人： Manabu Amikura , Teruo Iwata
IPC分类号： H01L21/31 , C23C16/455
CPC分类号： C23C16/45565
摘要： The present invention relates to a showerhead that supplies a source gas and a supporting gas for depositing a film into a processing vessel of a film deposition apparatus. The showerhead includes a body which is provided with a gas jetting surface (8). In the showerhead body, there are defined a first diffusion chamber (60) that receives the source gas and diffuses the same, and a second diffusion chamber (62) that receives the supporting gas and diffuses the same. The gas jetting surface has source-gas jetting orifices (10A) that are in communication with the first diffusion chamber, and first supporting-gas jetting orifices (10B) that are in communication with the second diffusion chamber. Each of the first supporting-gas jetting orifices (10B) are formed into a ring shape that adjacently surrounds a corresponding one of the source-gas jetting orifices (10A).
摘要翻译： 本发明涉及一种将源气体和用于将膜沉积的支撑气体供应到成膜装置的处理容器中的喷头。 喷头包括设置有气体喷射表面（8）的主体。 在喷头体中，限定了接收源气体并使其扩散的第一扩散室（60）和容纳支持气体并使其扩散的第二扩散室（62）。 气体喷射表面具有与第一扩散室连通的源气喷射孔（10A）和与第二扩散室连通的第一支撑气体喷射孔（10B）。 第一支撑气体喷射孔（10B）中的每一个形成为相邻地围绕相应的一个源气体喷射孔（10A）的环形。
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公开(公告)号：US20100224620A1
公开(公告)日：2010-09-09
申请号：US12279953
申请日：2007-02-07
申请人： Kazuo Shibata , Hiroo Kawasaki , Teruo Iwata , Manabu Amikura
发明人： Kazuo Shibata , Hiroo Kawasaki , Teruo Iwata , Manabu Amikura
IPC分类号： H05B3/68
CPC分类号： H05B3/145 , H01L21/67103 , H05B3/143 , H05B3/283 , H05B2203/002 , H05B2203/003 , H05B2203/014 , H05B2203/016 , H05B2203/037
摘要： [Problem to be Solved] To provide a plane heater including a carbon wire heating element which has an arrangement pattern allowing a heating surface to be a substantially uniform heating temperature plane.[Means to Solve Problem] Surface arrangement densities of a carbon wire heating element CW are different in an inner area and an outer area located in the periphery. The surface arrangement density in the above-mentioned outer area is denser than the surface arrangement density in the inner area. A power supply terminal unit 8 having connection wires for supplying electricity to the above-mentioned heating element CW is arranged in the center on the back side of the above-mentioned silica glass plate-like member 2. The connection wires 4a and 4b connected with the carbon wire heating element in the above-mentioned inner area are connected with the carbon wire heating element CW in the inner area in the center of the above-mentioned silica glass plate-like member. The connection wires 3a and 3b connected with the carbon wire heating element in the above-mentioned outer area are extended from the center of the above-mentioned silica glass plate-like member toward the outer area, and are connected with the carbon wire heating element CW in the outer area, without intersecting the carbon wire heating element CW in the above-mentioned inner area.
摘要翻译： [待解决的问题]提供一种具有碳线加热元件的平面加热器，其具有允许加热表面为基本上均匀的加热温度平面的布置图案。 解决问题的手段碳丝加热元件CW的表面排列密度在内部区域和位于周边的外部区域不同。 上述外部区域中的表面排列密度比内部区域中的表面排列密度更致密。 具有用于向上述加热元件CW供电的连接线的电源端子单元8布置在上述石英玻璃板状构件2的背面的中心。连接线4a和4b与 上述内部区域中的碳丝加热元件与上述石英玻璃板状构件的中心的内部区域中的碳线加热元件CW连接。 与上述外部区域中的碳丝加热元件连接的连接线3a和3b从上述石英玻璃板状构件的中心向外部区域延伸，并与碳线加热元件 CW在外部区域中，而不与上述内部区域中的碳线加热元件CW相交。
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公开(公告)号：US08143557B2
公开(公告)日：2012-03-27
申请号：US12279953
申请日：2007-02-07
申请人： Kazuo Shibata , Hiroo Kawasaki , Teruo Iwata , Manabu Amikura
发明人： Kazuo Shibata , Hiroo Kawasaki , Teruo Iwata , Manabu Amikura
IPC分类号： H05B3/68
CPC分类号： H05B3/145 , H01L21/67103 , H05B3/143 , H05B3/283 , H05B2203/002 , H05B2203/003 , H05B2203/014 , H05B2203/016 , H05B2203/037
摘要： To provide a plane heater, including a carbon wire heating element CW, in which surface arrangement density of the heating element CW in an outer area is denser than that in an inner area. A power supply terminal unit having connection wires for supplying electricity to the heating element CW is arranged in the center on the back side of a silica glass plate-like member 2. Connection wires 4a and 4b connected with the heating element CW in the inner area are connected with the heating element in the inner area in the center of the silica glass plate-like member. Connection wires 3a and 3b connected with the heating element in the outer area are extended from the center of the silica glass plate-like member toward the outer area and connected with the heating element CW in the outer area, without intersecting the heating element CW in the inner area.
摘要翻译： 提供包括碳线加热元件CW的平面加热器，其中外部区域中的加热元件CW的表面布置密度比内部区域中的表面布置密度更密。 具有用于向加热元件CW供电的连接线的电源端子单元布置在石英玻璃板状构件2的背面的中心。连接线4a和4b与加热元件CW连接在内部区域 与石英玻璃板状构件的中心的内部区域中的加热元件连接。 与外部区域中的加热元件连接的连接线3a和3b从石英玻璃板状构件的中心向外部区域延伸，并且与外部区域中的加热元件CW连接，而不与加热元件CW相交 内部区域。
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公开(公告)号：US07931749B2
公开(公告)日：2011-04-26
申请号：US10574531
申请日：2004-10-22
申请人： Manabu Amikura , Teruo Iwata
发明人： Manabu Amikura , Teruo Iwata
IPC分类号： C23C10/00 , C23C16/455
CPC分类号： C23C16/45565
摘要： The present invention relates to a showerhead that supplies a source gas and a supporting gas for depositing a film into a processing vessel of a film deposition apparatus. The showerhead includes a body which is provided with a gas jetting surface (8). In the showerhead body, there are defined a first diffusion chamber (60) that receives the source gas and diffuses the same, and a second diffusion chamber (62) that receives the supporting gas and diffuses the same. The gas jetting surface has source-gas jetting orifices (10A) that are in communication with the first diffusion chamber, and first supporting-gas jetting orifices (10B) that are in communication with the second diffusion chamber. Each of the first supporting-gas jetting orifices (10B) are formed into a ring shape that adjacently surrounds a corresponding one of the source-gas jetting orifices (10A).
摘要翻译： 本发明涉及一种将源气体和用于将膜沉积的支撑气体供应到成膜装置的处理容器中的喷头。 喷头包括设置有气体喷射表面（8）的主体。 在喷头体中，限定了接收源气体并使其扩散的第一扩散室（60）和容纳支持气体并使其扩散的第二扩散室（62）。 气体喷射表面具有与第一扩散室连通的源气喷射孔（10A）和与第二扩散室连通的第一支撑气体喷射孔（10B）。 每个第一支持气体喷射孔（10B）形成为相邻地围绕相应的一个源气体喷射孔（10A）的环形。
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公开(公告)号：US07718930B2
公开(公告)日：2010-05-18
申请号：US10552267
申请日：2004-04-07
申请人： Hiroo Kawasaki , Teruo Iwata , Manabu Amikura
发明人： Hiroo Kawasaki , Teruo Iwata , Manabu Amikura
CPC分类号： H01L21/68757 , C23C16/4581 , H01L21/67103 , H01L21/68785 , H01L21/68792
摘要： A thermal processing system has a processing vessel 4, a support post 30 stood on the bottom wall of the processing vessel 4, and a support table 32 internally provided with a heating means 38 and supported on the support post 30. A workpiece W is placed on the upper surface of the support table 32 and is subjected to a predetermined thermal process. The upper, the side and the lower surface of the support table 32 are covered with heat-resistant covering members 72, 74 and 76 to prevent the thermal diffusion of metal atoms causative of contamination from the support table 32. thus, various types of contamination, such as metal and organic contamination, can be prevented.
摘要翻译： 热处理系统具有处理容器4，位于处理容器4的底壁上的支撑柱30和内部设置有加热装置38并支撑在支撑柱30上的支撑台32。 在支撑台32的上表面上进行预定的热处理。 支撑台32的上表面，侧面和下表面被耐热覆盖件72,74和76覆盖，以防止因支撑台32污染的金属原子的热扩散。因此，各种类型的污染 ，例如金属和有机污染物。
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公开(公告)号：US20060199131A1
公开(公告)日：2006-09-07
申请号：US10552267
申请日：2004-04-07
申请人： Hiroo Kawasaki , Teruo Iwata , Manabu Amikura
发明人： Hiroo Kawasaki , Teruo Iwata , Manabu Amikura
IPC分类号： B01J3/04
CPC分类号： H01L21/68757 , C23C16/4581 , H01L21/67103 , H01L21/68785 , H01L21/68792
摘要： A thermal processing system has a processing vessel 4, a support post 30 stood on the bottom wall of the processing vessel 4, and a support table 32 internally provided with a heating means 38 and supported on the support post 30. A workpiece W is placed on the upper surface of the support table 32 and is subjected to a predetermined thermal process. The upper, the side and the lower surface of the support table 32 are covered with heat-resistant covering members 72, 74 and 76 to prevent the thermal diffusion of metal atoms causative of contamination from the support table 32. thus, various types of contamination, such as metal and organic contamination, can be prevented.
摘要翻译： 热处理系统具有处理容器4，位于处理容器4的底壁上的支撑柱30和内部设置有加热装置38并支撑在支撑柱30上的支撑台32。 工件W被放置在支撑台32的上表面上并进行预定的热处理。 支撑台32的上表面，侧面和下表面被耐热覆盖构件72,74和76覆盖，以防止来自支撑台32的污染引起的金属原子的热扩散。 因此，可以防止各种类型的污染，例如金属和有机污染物。
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公开(公告)号：US20070158026A1
公开(公告)日：2007-07-12
申请号：US10586050
申请日：2005-01-14
申请人： Manabu Amikura
发明人： Manabu Amikura
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45572 , H01L21/67109
摘要： A shower head structure (26) includes a shower head main body (78) of a one-piece structure formed in a generally cup shape and having a bottom wall (78A) provided with a plurality of gas injection holes (30A, 30B) formed therein and a side wall (78B) rising from a peripheral portion of the bottom wall. A plurality of gas diffusion chamber forming plates (82A-82C) are housed in the shower head main body (78). A through-hole is formed in a head mounting frame (76) disposed on a ceiling of a processing vessel (24). An upper portion of the side wall (78B) of the shower head main body (78) is inserted into the through-hole, so that a part of the side wall (78B) is exposed to the exterior of the processing vessel. A cooling mechanism (84) is disposed at the upper end portion of the side wall (78B). Heat transfer between the cooling mechanism (84) and the bottom wall (78A) is enhanced, so that the temperature of the bottom wall (78A) can be controlled at a proper value, thereby preventing any adhesion of an unnecessary film onto the bottom wall (78A).
摘要翻译： 淋浴头结构（26）包括形成为大致杯状的一体式结构的淋浴头主体（78），具有设置有多个气体喷射孔（30A，30）的底壁（78A） B）和从底壁的周边部分上升的侧壁（78B）。 多个气体扩散室形成板（82A-82C）容纳在淋浴头主体（78）中。 在设置在处理容器（24）的天花板上的头部安装框架（76）中形成通孔。 淋浴头主体（78）的侧壁（78B）的上部插入到通孔中，使得侧壁（78B）的一部分暴露于处理容器的外部。 冷却机构（84）设置在侧壁（78B）的上端部。 冷却机构（84）与底壁（78A）之间的热传递被增强，使得底壁（78A）的温度可以被控制在适当的值，从而防止不必要的膜粘附到 底壁（78A）。
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公开(公告)号：US07651584B2
公开(公告)日：2010-01-26
申请号：US10586050
申请日：2005-01-14
申请人： Manabu Amikura
发明人： Manabu Amikura
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45572 , H01L21/67109
摘要： A shower head structure (26) includes a shower head main body (78) of a one-piece structure formed in a generally cup shape and having a bottom wall (78A) provided with a plurality of gas injection holes (30A, 30B) formed therein and a side wall (78B) rising from a peripheral portion of the bottom wall. A plurality of gas diffusion chamber forming plates (82A-82C) are housed in the shower head main body (78). A through-hole is formed in a head mounting frame (76) disposed on a ceiling of a processing vessel (24). An upper portion of the side wall (78B) of the shower head main body (78) is inserted into the through-hole, so that a part of the side wall (78B) is exposed to the exterior of the processing vessel. A cooling mechanism (84) is disposed at the upper end portion of the side wall (78B). Heat transfer between the cooling mechanism (84) and the bottom wall (78A) is enhanced, so that the temperature of the bottom wall (78A) can be controlled at a proper value, thereby preventing any adhesion of an unnecessary film onto the bottom wall (78A).
摘要翻译： 淋浴头结构（26）包括形成为大致杯状的一体式结构的淋浴头主体（78），并具有设置有形成有多个气体喷射孔（30A，30B）的底壁（78A） 以及从底壁的周边部分上升的侧壁（78B）。 多个气体扩散室形成板（82A-82C）容纳在花洒头主体（78）中。 在设置在处理容器（24）的天花板上的头部安装框架（76）中形成通孔。 喷淋头主体（78）的侧壁（78B）的上部插入到通孔中，使得侧壁（78B）的一部分暴露于处理容器的外部。 冷却机构（84）设置在侧壁（78B）的上端部。 冷却机构（84）与底壁（78A）之间的热传递被增强，使得底壁（78A）的温度可以被控制在适当的值，从而防止不必要的膜粘附到底壁 （78A）。
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