摘要:
A CMP conditioner having excellent corrosion resistance around abrasive grains includes a grindstone base having, formed on one side, an abrasive grain layer including abrasive grains fixed in a metallic bonding phase treated to form a first protective layer comprising an oxide on the surface of the metallic bonding phase of the abrasive grain layer by the sol-gel method. Subsequently, an aerosol obtained by dispersing fine particles of a brittle material in a gas is jetted and caused to strike on the surface of the first protective layer to form a second protective layer comprising a thick oxide film.
摘要:
A sharp-edged blade of the invention includes a circular thin-plate-shaped abrasive grain layer 3 in which abrasive grains 2 are held in a bond phase 1. An oxide film manufactured by a sol-gel method is formed on the surface of at least the bond phase 1 of the abrasive grain layer 3 as a first protective layer 4. A thick oxide film which has polycrystals and is structured such that a grain boundary layer composed of a glass layer does not exist at an interface substantially between the crystals is formed on the surface of the first protective layer 4 as a second protective layer 5.
摘要:
According to the present invention, a structure made of yttrium oxide is formed on a surface of a substrate comprises yttrium oxide polycrystals as a main component, a boundary layer made of hyaline does not substantially exist on a boundary face between crystals which form the structure, and both a cubic system and a monoclinic system exist in the crystal system of the yttrium oxide polycrystals. With this, it is possible to adjust the hardness of the structure made of yttrium oxide formed on a surface of a substrate to be larger than that of an yttrium oxide sintered body.
摘要:
There is disclosed a method for producing a film with use of aerosol which is capable of forming a film of satisfactory quality at an extremely high film formation rate. In the method, first, a carrier gas is mixed into fine particles comprising a brittle material as a main component and having a 50% average particle diameter of 100 nm to 300 nm on a number basis to form an aerosol. The aerosol is ejected onto the surface of a substrate to make the fine particles come into collision with the substrate, so that the collision crushes or deforms the fine particles to form a film on the substrate.
摘要:
There is disclosed a method for producing a film with use of aerosol which is capable of forming a film of satisfactory quality at a high film formation rate. In the method, first, a carrier gas is mixed into a particle mixture which comprises raw fine particles comprising a brittle material as a main component and having a 50% average particle diameter of 0.010 μm to 1.0 μm on a volume basis, and auxiliary particles comprising a brittle material of the same type as or a different type from the brittle material of the raw fine particles as a main component and having a 50% average particle diameter of 3.0 μm to 100 μm on a volume basis, to form an aerosol. The aerosol is ejected onto the surface of a substrate to make the particle mixture come into collision with the substrate, so that the collision crushes or deforms the raw fine particles to form a film on the substrate.
摘要:
According to the present invention, a structure made of yttrium oxide is formed on a surface of a substrate comprises yttrium oxide polycrystals as a main component, a boundary layer made of hyaline does not substantially exist on a boundary face between crystals which form the structure, and both a cubic system and a monoclinic system exist in the crystal system of the yttrium oxide polycrystals. With this, it is possible to adjust the hardness of the structure made of yttrium oxide formed on a surface of a substrate to be larger than that of an yttrium oxide sintered body.
摘要:
A treatment gas is supplied to form a Ti-based film on a predetermined number of wafers W while setting a temperature of a susceptor 2 in a chamber 1 to a predetermined temperature. After this, the interior of the chamber 1 containing no wafers W is cleaned by discharging Cl2 gas as a cleaning gas from a shower head 10 into the chamber 1. During this cleaning, the temperature of each of the susceptor 2, the shower head 10, and the wall portion of the chamber 1 is independently controlled so that the temperature of the susceptor 2 is not lower than the decomposition start temperature of Cl2 gas and the temperature of the shower head 10 and the wall portion of the chamber 1 is not higher than the decomposition start temperature.
摘要:
A laser machining method and a laser machining apparatus superior in hole position accuracy and hole quality. An outgoing beam outputted as short pulses is shaped by a pulse shaping unit so as to form a #1 branch beam. The #1 branch beam is supplied to a portion to be machined, so as to machine the portion. In this case, the #1 branch beam may be controlled to synchronize with the outgoing beam. When a piece to be machined is made from a metal material and at least one of an organic material and an inorganic material, the metal material is machined with a laser beam shaped to have a pulse width not shorter than 100 ns, and at least one of the organic material and the inorganic material is machined with a laser beam shaped to have a pulse width shorter than 100 ns.
摘要:
A laser machining method and a laser machining apparatus superior in hole position accuracy and hole quality. An outgoing beam outputted as short pulses is shaped by a pulse shaping unit so as to form a #1 branch beam. The #1 branch beam is supplied to a portion to be machined, so as to machine the portion. In this case, the #1 branch beam may be controlled to synchronize with the outgoing beam. When a piece to be machined is made from a metal material and at least one of an organic material and an inorganic material, the metal material is machined with a laser beam shaped to have a pulse width not shorter than 100 ns, and at least one of the organic material and the inorganic material is machined with a laser beam shaped to have a pulse width shorter than 100 ns.
摘要:
A film-formation method for a semiconductor process includes pre-coating of covering a worktable with a pre-coat before loading a target substrate into a process chamber, and film formation thereafter of loading the target substrate into the process chamber, and forming a main film on the target substrate. The pre-coating repeats the first and second steps a plurality of times, thereby laminating segment films to form the pre-coat. The first step supplies first and second process gases into the process chamber, thereby forming a segment film containing a metal element on the worktable. The second step supplies the second process gas containing no metal element into the process chamber, thereby exhausting and removing, from the process chamber, a byproduct produced in the first step other than a component forming the segment film.