公开(公告)号：US07521659B2

公开(公告)日：2009-04-21

申请号：US11825198

申请日：2007-07-05

Applicant: Tetsuo Asaba ,  Su-Hun Lim

Inventor： Tetsuo Asaba ,  Su-Hun Lim

IPC: H01L27/00

CPC classification number: H04N9/045 ,  H04N5/343 ,  H04N5/3458 ,  H04N5/37455 ,  H04N5/37457

Abstract: A solid-state image-sensing device includes a pixel array and an averaging unit. The pixel array includes a matrix of pixels and includes a respective output line for each of a plurality of pixel groupings such as for each column of pixels. The averaging unit receives respective signals from first and second output lines of the pixel array to generate a pulse width signal that indicates an average of such respective signals. A respective signal of the first output line is generated from combining photocurrents from a first set of at least two pixels sensing a same first color in the pixel array.

Abstract translation: 固态图像感测装置包括像素阵列和平均单元。 像素阵列包括像素矩阵，并且包括用于多个像素分组中的每一个的相应输出线，例如针对每列像素。 平均单元从像素阵列的第一和第二输出线接收相应的信号，以产生指示这些各个信号的平均值的脉冲宽度信号。 通过组合来自感测像素阵列中的相同第一颜色的至少两个像素的第一组的光电流来生成第一输出行的相应信号。

公开(公告)号：US20080001067A1

公开(公告)日：2008-01-03

申请号：US11825198

申请日：2007-07-05

Applicant: Tetsuo Asaba ,  Su-Hun Lim

Inventor： Tetsuo Asaba ,  Su-Hun Lim

IPC: H01L27/14

CPC classification number: H04N9/045 ,  H04N5/343 ,  H04N5/3458 ,  H04N5/37455 ,  H04N5/37457

Abstract: A solid-state image-sensing device includes a pixel array and an averaging unit. The pixel array includes a matrix of pixels and includes a respective output line for each of a plurality of pixel groupings such as for each column of pixels. The averaging unit receives respective signals from first and second output lines of the pixel array to generate a pulse width signal that indicates an average of such respective signals. A respective signal of the first output line is generated from combining photocurrents from a first set of at least two pixels sensing a same first color in the pixel array.

Abstract translation: 固态图像感测装置包括像素阵列和平均单元。 像素阵列包括像素矩阵，并且包括用于多个像素分组中的每一个的相应输出线，例如针对每列像素。 平均单元从像素阵列的第一和第二输出线接收相应的信号，以产生指示这些各个信号的平均值的脉冲宽度信号。 通过组合来自感测像素阵列中的相同第一颜色的至少两个像素的第一组的光电流来生成第一输出行的相应信号。

公开(公告)号：US20050280730A1

公开(公告)日：2005-12-22

申请号：US11157461

申请日：2005-06-21

Applicant: Su-hun Lim ,  Tetsuo Asaba

Inventor： Su-hun Lim ,  Tetsuo Asaba

IPC: H04N3/14 ,  H04N5/21 ,  H04N5/335 ,  H04N5/341 ,  H04N5/353 ,  H04N5/357 ,  H04N5/363 ,  H04N5/374 ,  H04N5/378 ,  H04N9/07 ,  H04N5/217

CPC classification number: H04N5/347

Abstract: Provided are an improved solid-state image-sensing device for averaging sub-sampled analog signals and a method for driving the same. The solid-state image-sensing device receives a video signal from each pixel column and converts the video signal into a digital signal while a switch for averaging is turned off when the solid-state image-sensing device captures a still image. When the solid-state image-sensing device photographs a moving picture, one of two CDS circuits receives a signal corresponding to an average of video signals of columns having the same color pixel and converts the signal into a digital signal using the switch turned on.

Abstract translation: 提供了用于平均次采样模拟信号的改进的固态图像感测装置及其驱动方法。 固态图像感测装置从固体摄像装置捕获静止图像时，从每个像素列接收视频信号，并将该视频信号转换为数字信号，同时关闭平均开关。 当固态图像感测装置拍摄运动图像时，两个CDS电路中的一个接收与具有相同颜色像素的列的视频信号的平均值相对应的信号，并且使用打开的开关将该信号转换为数字信号。

公开(公告)号：US20080224191A1

公开(公告)日：2008-09-18

申请号：US12074573

申请日：2008-03-05

Applicant: Jung-Chak Ahn ,  Yi-Tae Kim ,  Kyung-Ho Lee ,  Hyuck-In Kwon ,  Ju-Hyun Ko ,  Tetsuo Asaba ,  Jong-Jin Lee ,  Su-Hun Lim ,  Jung-Yeon Kim ,  Se-Young Kim ,  Sung-In Hwang

Inventor： Jung-Chak Ahn ,  Yi-Tae Kim ,  Kyung-Ho Lee ,  Hyuck-In Kwon ,  Ju-Hyun Ko ,  Tetsuo Asaba ,  Jong-Jin Lee ,  Su-Hun Lim ,  Jung-Yeon Kim ,  Se-Young Kim ,  Sung-In Hwang

IPC: H01L31/101

CPC classification number: H01L29/0847 ,  H01L27/14609 ,  H01L29/1083 ,  H01L29/78

Abstract: An image pickup device includes an active pixel sensor (APS), a row driver, and a leakage current breaker. The active pixel sensor includes an array of a plurality of pixels. The row driver selects at least one pixel to be activated to output signals. The leakage current breaker decreases the leakage current through the unselected pixels by applying a leakage current breaker voltage at the bit lines of the APS array.

Abstract translation: 图像拾取装置包括有源像素传感器（APS），行驱动器和泄漏电流断路器。 有源像素传感器包括多个像素的阵列。 行驱动器选择要激活的至少一个像素来输出信号。 泄漏电流断路器通过在APS阵列的位线处施加泄漏电流断路器电压来减小通过未选择的像素的泄漏电流。

公开(公告)号：US07508429B2

公开(公告)日：2009-03-24

申请号：US11157461

申请日：2005-06-21

Applicant: Su-hun Lim ,  Tetsuo Asaba

Inventor： Su-hun Lim ,  Tetsuo Asaba

IPC: H04N5/217 ,  H04N3/14 ,  H04N5/335 ,  H04N9/04 ,  H04N9/083

CPC classification number: H04N5/347

Abstract: Provided are an improved solid-state image-sensing device for averaging sub-sampled analog signals and a method for driving the same. The solid-state image-sensing device receives a video signal from each pixel column and converts the video signal into a digital signal while a switch for averaging is turned off when the solid-state image-sensing device captures a still image. When the solid-state image-sensing device photographs a moving picture, one of two CDS circuits receives a signal corresponding to an average of video signals of columns having the same color pixel and converts the signal into a digital signal using the switch turned on.

Abstract translation: 提供了用于平均次采样模拟信号的改进的固态图像感测装置及其驱动方法。 固态图像感测装置从固体摄像装置捕获静止图像时，从每个像素列接收视频信号，并将该视频信号转换为数字信号，同时关闭平均开关。 当固态图像感测装置拍摄运动图像时，两个CDS电路中的一个接收与具有相同颜色像素的列的视频信号的平均值相对应的信号，并且使用打开的开关将该信号转换为数字信号。

公开(公告)号：US5975685A

公开(公告)日：1999-11-02

申请号：US990919

申请日：1997-12-15

Applicant: Tetsuo Asaba ,  Shigeyuki Matsumoto ,  Hideshi Kuwabara

Inventor： Tetsuo Asaba ,  Shigeyuki Matsumoto ,  Hideshi Kuwabara

IPC: B41J2/04 ,  B41J2/14 ,  B41J2/05

CPC classification number: B41J2/04 ,  B41J2/14072 ,  B41J2/14129 ,  B41J2002/041 ,  B41J2202/13

Abstract: An ink jet head provided with discharging orifices for discharging ink, which includes a substrate having a supporting member having at least a surface having substantially insulating properties and a plurality of diodes provided on the supporting member, the diodes each comprising a polycrystalline silicon layer and at least one metal silicide layer, wherein the polycrystalline silicon layer has a p-n junction surface therein.

Abstract translation: 一种喷墨头，其具有用于排出墨的排出口，该喷墨头包括具有至少具有基本上绝缘性的表面的支撑构件的基板和设置在该支撑构件上的多个二极管，所述二极管各自包括多晶硅层， 至少一个金属硅化物层，其中所述多晶硅层在其中具有pn结表面。

公开(公告)号：US5614439A

公开(公告)日：1997-03-25

申请号：US393928

申请日：1995-02-21

Applicant: Fumio Murooka ,  Tetsuo Asaba ,  Shigeyuki Matsumoto ,  Osamu Ikeda ,  Toshihiko Ichise ,  Yukihiko Sakashita ,  Shunsuke Inoue

Inventor： Fumio Murooka ,  Tetsuo Asaba ,  Shigeyuki Matsumoto ,  Osamu Ikeda ,  Toshihiko Ichise ,  Yukihiko Sakashita ,  Shunsuke Inoue

IPC: H01L21/00 ,  H01L21/285 ,  H01L21/677 ,  H01L21/768 ,  H01L23/522 ,  H01L21/44

CPC classification number: H01L21/67167 ,  H01L21/28556 ,  H01L21/67173 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/76879 ,  H01L23/5226 ,  H01L2924/0002 ,  Y10S148/05

Abstract: A semiconductor device with a high-density wiring structure, and a producing method for such device are provided. The semiconductor device has a substrate such as silicon, an insulation layer laminated on the substrate and having a groove or a hole, and a wiring of a conductive material formed in the groove or hole in the insulation layer. The wiring is formed by depositing a conductive material such as aluminum or an aluminum alloy in the groove or hole of the insulation layer by a CVD method utilizing alkylaluminum hydride gas and hydrogen. The groove or hole can be formed by an ordinary patterning method combined with etching.

Abstract translation: 提供具有高密度布线结构的半导体器件及其制造方法。 半导体器件具有诸如硅的衬底，层叠在衬底上的具有凹槽或孔的绝缘层以及形成在绝缘层中的凹槽或孔中的导电材料的布线。 通过使用烷基氢化铝气体和氢气的CVD方法在绝缘层的凹槽或孔中沉积导电材料如铝或铝合金而形成布线。 凹槽或孔可以通过与蚀刻结合的普通图案化方法形成。

公开(公告)号：US5364802A

公开(公告)日：1994-11-15

申请号：US130461

申请日：1993-10-01

Applicant: Yuzo Kataoka ,  Toshihiko Ichise ,  Keiji Ishizuka ,  Tetsuo Asaba

Inventor： Yuzo Kataoka ,  Toshihiko Ichise ,  Keiji Ishizuka ,  Tetsuo Asaba

IPC: H01L21/331 ,  H01L21/335 ,  H01L21/74 ,  H01L21/761 ,  H01L29/08 ,  H01L29/417

CPC classification number: H01L29/66416 ,  H01L21/743 ,  H01L21/761 ,  H01L29/0821 ,  H01L29/41708 ,  H01L29/66272

Abstract: A semiconductor device including a bipolar transistor, has a collector region including a first semiconductor region of the first conductivity type and a second semiconductor region of the first conductivity type having higher resistance than the first semiconductor region, a base region including a semiconductor region of the second conductivity type, and an emitter region including a semiconductor region of the first conductivity type. The semiconductor device further comprises a metal layer region for connecting the first semiconductor region and the collector electrode on the collector region provided within the second semiconductor region layer of the collector region.

Abstract translation: 包括双极晶体管的半导体器件具有包括第一导电类型的第一半导体区域和具有比第一半导体区域更高的电阻的第一导电类型的第二半导体区域的集电极区域，包括半导体区域的半导体区域的基极区域 第二导电类型和包括第一导电类型的半导体区域的发射极区域。 半导体器件还包括金属层区域，用于在设置在集电区域的第二半导体区域层内的集电极区域上连接第一半导体区域和集电极电极。

公开(公告)号：US20060284054A1

公开(公告)日：2006-12-21

申请号：US11455389

申请日：2006-06-19

Applicant: Tetsuo Asaba

Inventor： Tetsuo Asaba

IPC: H01L31/00 ,  H01L27/00

CPC classification number: H01L27/14609 ,  H04N5/361

Abstract: A pixel circuit of an image sensor includes a photo-converting unit such as a photo-diode for generating charge from incident light. The pixel circuit also includes a charge storing capacitor for storing the charge generated by the photo-converting unit. The pixel circuit further includes a floating diffusion node that receives the charge from the charge storing unit after being reset. Thus, an image signal VSIG is generated after a reset signal VRES is generated from the pixel circuit.

Abstract translation: 图像传感器的像素电路包括用于从入射光产生电荷的光电二极管等光转换单元。 像素电路还包括用于存储由光转换单元生成的电荷的电荷存储电容器。 像素电路还包括在复位之后从电荷存储单元接收电荷的浮动扩散节点。 因此，在从像素电路产生复位信号VRES之后产生图像信号VSIG。

公开(公告)号：US20060138489A1

公开(公告)日：2006-06-29

申请号：US11317356

申请日：2005-12-23

Applicant: Jung-Chak Ahn ,  Tetsuo Asaba ,  Young-Chan Kim

Inventor： Jung-Chak Ahn ,  Tetsuo Asaba ,  Young-Chan Kim

IPC: H01L31/113

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14647 ,  H04N5/3559 ,  H04N5/3745 ,  H04N5/37457

Abstract: A complementary metal-oxide semiconductor (CMOS) active pixel sensor includes a photodiode, a transfer transistor with a coupled gate, a reset transistor and a signal transfer circuit, where the photodiode generates electric charges in response to incident light, the transfer transistor transfers the electric charges integrated in the photodiode to a floating diffusion node, wherein the transfer transistor has a first transfer gate and a second transfer gate, and the first and second transfer gates have a coupled gate structure, the reset transistor resets a potential level of the floating diffusion node by a given voltage level, the signal transfer circuit transfers the potential level of the floating diffusion node to an internal circuit in response to a selection signal, and the CMOS active pixel sensor with the coupled gate may increase a capacity of the photodiode and reduce an image lag by using a voltage coupling effect of the coupled gate.

Abstract translation: 互补金属氧化物半导体（CMOS）有源像素传感器包括光电二极管，具有耦合栅极的传输晶体管，复位晶体管和信号传输电路，其中光电二极管响应于入射光产生电荷，传输晶体管将 集成在光电二极管中的电荷到浮动扩散节点，其中传输晶体管具有第一传输门和第二传输门，并且第一和第二传输门具有耦合的栅极结构，复位晶体管复位浮置的电位 扩散节点通过给定的电压电平，信号传输电路响应于选择信号将浮动扩散节点的电位电平传输到内部电路，并且具有耦合栅极的CMOS有源像素传感器可以增加光电二极管的容量， 通过使用耦合栅极的电压耦合效应来减小图像滞后。