公开(公告)号：US20100006940A1

公开(公告)日：2010-01-14

申请号：US12497720

申请日：2009-07-06

申请人： Tetsuya KAKEHATA ,  Hideto OHNUMA ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO

发明人： Tetsuya KAKEHATA ,  Hideto OHNUMA ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/762

CPC分类号： H01L27/1218 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/78603 ,  H01L31/0352

摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.

摘要翻译： 本发明的目的是提供一种具有半导体层的SOI衬底，即使在使用玻璃衬底作为基底衬底时也可以实际使用。 另一个目的是提供一种使用这种SOI衬底具有高可靠性的半导体器件。 在用作SOI衬底的基底衬底的玻璃衬底的至少一个表面上形成改变的层，以形成SOI衬底。 通过用包括盐酸，硫酸或硝酸的溶液清洗玻璃基板，在玻璃基板的至少一个表面上形成改变的层。 改变的层在其组成中具有较高比例的氧化硅，并且具有比玻璃基底更低的密度。

公开(公告)号：US20110316082A1

公开(公告)日：2011-12-29

申请号：US13230086

申请日：2011-09-12

申请人： Tetsuya KAKEHATA ,  Hideto OHNUMA ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO

发明人： Tetsuya KAKEHATA ,  Hideto OHNUMA ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO

IPC分类号： H01L29/786 ,  H01L29/02

CPC分类号： H01L27/1218 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/78603 ,  H01L31/0352

摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.

摘要翻译： 本发明的目的是提供一种具有半导体层的SOI衬底，即使在使用玻璃衬底作为基底衬底时也可以实际使用。 另一个目的是提供一种使用这种SOI衬底具有高可靠性的半导体器件。 在用作SOI衬底的基底衬底的玻璃衬底的至少一个表面上形成改变的层，以形成SOI衬底。 通过用包括盐酸，硫酸或硝酸的溶液清洗玻璃基板，在玻璃基板的至少一个表面上形成改变的层。 改变的层在其组成中具有较高比例的氧化硅，并且具有比玻璃基底更低的密度。

公开(公告)号：US20090072343A1

公开(公告)日：2009-03-19

申请号：US12207634

申请日：2008-09-10

申请人： Hideto OHNUMA ,  Yoichi IIKUBO ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO ,  Akihisa SHIMOMURA ,  Eiji HIGA ,  Tatsuya MIZOI ,  Yoji NAGANO ,  Fumito ISAKA ,  Tetsuya KAKEHATA ,  Shunpei YAMAZAKI

发明人： Hideto OHNUMA ,  Yoichi IIKUBO ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO ,  Akihisa SHIMOMURA ,  Eiji HIGA ,  Tatsuya MIZOI ,  Yoji NAGANO ,  Fumito ISAKA ,  Tetsuya KAKEHATA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/00

CPC分类号： H01L27/1266 ,  H01L21/2007 ,  H01L21/76254 ,  H01L21/84 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78654

摘要： A high-performance semiconductor device using an SOI substrate in which a low-heat-resistance substrate is used as a base substrate. Further, a high-performance semiconductor device formed without using chemical polishing. Further, an electronic device using the semiconductor device. An insulating layer over an insulating substrate, a bonding layer over the insulating layer, and a single-crystal semiconductor layer over the bonding layer are included, and the arithmetic-mean roughness of roughness in an upper surface of the single-crystal semiconductor layer is greater than or equal to 1 nm and less than or equal to 7 nm. Alternatively, the root-mean-square roughness of the roughness may be greater than or equal to 1 nm and less than or equal to 10 nm. Alternatively, a maximum difference in height of the roughness may be greater than or equal to 5 nm and less than or equal to 250 nm.

摘要翻译： 使用其中使用低耐热性衬底作为基底的SOI衬底的高性能半导体器件。 而且，不用化学抛光而形成的高性能半导体器件。 此外，使用该半导体器件的电子设备。 包括绝缘基板上的绝缘层，绝缘层上的接合层和接合层上的单晶半导体层，单晶半导体层上表面的运算平均粗糙度为 大于或等于1nm且小于或等于7nm。 或者，粗糙度的均方根粗糙度可以大于或等于1nm且小于或等于10nm。 或者，粗糙度的最大高度差可以大于或等于5nm且小于或等于250nm。

公开(公告)号：US20090137101A1

公开(公告)日：2009-05-28

申请号：US12247470

申请日：2008-10-08

申请人： Shunpei YAMAZAKI ,  Hideto OHNUMA ,  Yoichi IIKUBO ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO

发明人： Shunpei YAMAZAKI ,  Hideto OHNUMA ,  Yoichi IIKUBO ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO

IPC分类号： H01L21/71

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： To provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like is used. The semiconductor layer is transferred to a supporting substrate by the steps of irradiating a semiconductor wafer with ions from one surface to form a damaged layer; forming an insulating layer over one surface of the semiconductor wafer; attaching one surface of the supporting substrate to the insulating layer formed over the semiconductor wafer and performing heat treatment to bond the supporting substrate to the semiconductor wafer; and performing separation at the damaged layer into the semiconductor wafer and the supporting substrate. The damaged layer remaining partially over the semiconductor layer is removed by wet etching and a surface of the semiconductor layer is irradiated with a laser beam.

摘要翻译： 为了提供一种制造具有半导体层的SOI衬底的方法，即使使用诸如玻璃衬底等的耐热温度低的衬底也可以实际使用。 通过以下步骤将半导体层转移到支撑衬底：从一个表面照射半导体晶片以形成损伤层; 在所述半导体晶片的一个表面上形成绝缘层; 将所述支撑基板的一个表面附接到形成在所述半导体晶片上的绝缘层，并进行热处理以将所述支撑基板接合到所述半导体晶片; 并且在所述损伤层处进行到所述半导体晶片和所述支撑基板的分离。 通过湿蚀刻除去半导体层上部分残留的损伤层，并用激光束照射半导体层的表面。

公开(公告)号：US20100304506A1

公开(公告)日：2010-12-02

申请号：US12850292

申请日：2010-08-04

申请人： Koichiro TANAKA ,  Yoshiaki YAMAMOTO

发明人： Koichiro TANAKA ,  Yoshiaki YAMAMOTO

IPC分类号： H01L21/66 ,  H01L21/268 ,  B23K26/06

CPC分类号： H01L21/02686 ,  B23K26/04 ,  B23K26/0738 ,  H01L21/02532 ,  H01L21/02689 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285

摘要： The present invention is to provide a laser irradiation method for performing homogeneous laser irradiation to the irradiation object even when the thickness of the irradiation object is not even. In the case of irradiating the irradiation object having uneven thickness, the laser irradiation is performed while keeping the distance between the irradiation object and the lens for condensing the laser beam on the surface of the irradiation object constant by using an autofocusing mechanism. In particular, when the irradiation object is irradiated with the laser beam by moving the irradiation object relative to the laser beam in the first direction and the second direction of the beam spot formed on the irradiation surface, the distance between the irradiation object and the lens is controlled by the autofocusing mechanism before the irradiation object is moved in the first and second directions.

摘要翻译： 本发明提供一种激光照射方法，即使在照射物体的厚度不均匀的情况下也能够对照射物进行均匀的激光照射。 在照射具有不均匀厚度的照射物体的情况下，通过使用自动聚焦机构，在照射物体和透镜之间的距离保持在照射物体的表面上恒定的同时，进行激光照射。 特别地，当通过在照射表面上形成的第一方向和束点的第二方向上相对于激光束照射被照射物体照射激光束时，照射物体与透镜之间的距离 在照射对象沿第一和第二方向移动之前由自动对焦机构控制。

公开(公告)号：US20090250590A1

公开(公告)日：2009-10-08

申请号：US12480984

申请日：2009-06-09

申请人： Koichiro TANAKA ,  Yoshiaki YAMAMOTO

发明人： Koichiro TANAKA ,  Yoshiaki YAMAMOTO

IPC分类号： G02B27/40 ,  H01L21/268

CPC分类号： H01L21/02686 ,  B23K26/04 ,  B23K26/0738 ,  H01L21/02532 ,  H01L21/02689 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285

摘要： The present invention is to provide a laser irradiation method for performing homogeneous laser irradiation to the irradiation object even when the thickness of the irradiation object is not even. In the case of irradiating the irradiation object having uneven thickness, the laser irradiation is performed while keeping the distance between the irradiation object and the lens for condensing the laser beam on the surface of the irradiation object constant by using an autofocusing mechanism. In particular, when the irradiation object is irradiated with the laser beam by moving the irradiation object relative to the laser beam in the first direction and the second direction of the beam spot formed on the irradiation surface, the distance between the irradiation object and the lens is controlled by the autofocusing mechanism before the irradiation object is moved in the first and second directions.

摘要翻译： 本发明提供一种激光照射方法，即使在照射物体的厚度不均匀的情况下也能够对照射物进行均匀的激光照射。 在照射具有不均匀厚度的照射物体的情况下，通过使用自动聚焦机构，在照射物体和透镜之间的距离保持在照射物体的表面上恒定的同时，进行激光照射。 特别地，当通过在照射表面上形成的第一方向和束点的第二方向上相对于激光束照射被照射物体照射激光束时，照射物体与透镜之间的距离 在照射对象沿第一和第二方向移动之前由自动对焦机构控制。

公开(公告)号：US20090239108A1

公开(公告)日：2009-09-24

申请号：US12476305

申请日：2009-06-02

申请人： Shinji MIYAUCHI ,  Tetsuya UEDA ,  Yoshiaki YAMAMOTO

发明人： Shinji MIYAUCHI ,  Tetsuya UEDA ,  Yoshiaki YAMAMOTO

IPC分类号： H01M8/04

CPC分类号： H01M8/04052 ,  F24D17/001 ,  F24D19/1051 ,  F24D2200/19 ,  F24D2220/042 ,  F24D2240/26 ,  H01M8/04029 ,  H01M8/04037 ,  H01M8/04059 ,  H01M8/04358 ,  H01M8/04373 ,  H01M8/04425 ,  H01M8/04723 ,  H01M8/04738 ,  H01M8/04955 ,  H01M2250/405 ,  Y02B90/16 ,  Y02P80/15

摘要： A method of operating a fuel cell cogeneration system comprises the steps of cooling a fuel cell by circulating an internal heat transfer medium through the fuel cell while the fuel cell is generating electric power, storing an external heat transfer medium in a heat utilization portion, detecting remaining calories of the heat utilization portion by a first detector provided at the heat utilization portion, increasing a temperature of the fuel cell to an operating temperature by carrying out a first temperature increasing operation, and increasing the temperature of the fuel cell to the operating temperature by carrying out a second temperature increasing operation.

摘要翻译： 一种操作燃料电池热电联产系统的方法包括以下步骤：在燃料电池产生电力的同时使内部传热介质循环通过燃料电池来冷却燃料电池，将外部传热介质储存在热利用部分中，检测 通过设置在热利用部分的第一检测器保持热利用部分的热量，通过进行第一升温操作将燃料电池的温度升高到工作温度，并且将燃料电池的温度提高到工作温度 通过进行第二升温操作。

公开(公告)号：US20070205416A1

公开(公告)日：2007-09-06

申请号：US11679397

申请日：2007-02-27

申请人： Junichiro SAKATA ,  Kohei YOKOYAMA ,  Yoshiaki YAMAMOTO ,  Takahiro KAWAKAMI

发明人： Junichiro SAKATA ,  Kohei YOKOYAMA ,  Yoshiaki YAMAMOTO ,  Takahiro KAWAKAMI

IPC分类号： H01L33/00

CPC分类号： C09K11/621 ,  C09K11/641 ,  C09K11/881 ,  H05B33/14

摘要： A light emitting element that can be driven at a low voltage is provided. Further, a light emitting device and an electronic device with reduced power consumption are provided. A light emitting element is provided that includes a substrate 100, and a first electrode 101, a first insulating layer 102, a light emitting layer 103, a second insulating layer 104, and a second electrode 105, which are over the substrate 100. The light emitting layer 103 includes a compound ABC2, referred to as a ‘chalcopyrite’ (wherein A is Cu or Ag, B is Al, Ga, or In, and C is S, Se, or Te). By employing such a structure, a light emitting element that can be driven at a low voltage can be provided.

摘要翻译： 提供可以以低电压驱动的发光元件。 此外，提供了具有降低的功耗的发光装置和电子装置。 提供了一种发光元件，其包括基板100，以及位于基板100上方的第一电极101，第一绝缘层102，发光层103，第二绝缘层104和第二电极105。 发光层103包括称为“黄铜矿”（其中A为Cu或Ag，B为Al，Ga或In，C为S，Se或Te的化合物ABC 2 ）。 通过采用这种结构，可以提供能够以低电压驱动的发光元件。

公开(公告)号：US20070176536A1

公开(公告)日：2007-08-02

申请号：US11625114

申请日：2007-01-19

申请人： Junichiro SAKATA ,  Takahiro KAWAKAMI ,  Yoshiaki YAMAMOTO ,  Miki KATAYAMA ,  Kohei YOKOYAMA

发明人： Junichiro SAKATA ,  Takahiro KAWAKAMI ,  Yoshiaki YAMAMOTO ,  Miki KATAYAMA ,  Kohei YOKOYAMA

IPC分类号： H01J1/62

CPC分类号： C09K11/565 ,  C09K11/54 ,  C09K11/567 ,  C09K11/621 ,  C09K11/7701 ,  C09K11/883 ,  H05B33/14

摘要： An object is to provide a novel light emitting material. Another object is to provide a light emitting device and an electronic device with reduced power consumption. Still another object is to provide a light emitting device and an electronic device which can be manufactured at low cost. Provided is a light emitting element including a base material, a first impurity element, a second impurity element, and a third impurity element. The base material is one of ZnS, CdS, CaS, Y2S3, Ga2S3, SrS, BaS, ZnO, Y2O3, AlN, GaN, InN, ZnSe, ZnTe, and SrGa2S4; the first impurity element is any of Cu, Ag, Au, Pt, and Si; the second impurity element is any of F, Cl, Br, I, B, Al, Ga, In, and Tl; and the third impurity element is any of Li, Na, K, Rb, Cs, N, P, As, Sb, and Bi.

摘要翻译： 目的是提供一种新颖的发光材料。 另一个目的是提供一种降低功耗的发光器件和电子器件。 另一个目的是提供一种可以以低成本制造的发光器件和电子器件。 提供了包括基材，第一杂质元素，第二杂质元素和第三杂质元素的发光元件。 基材是ZnS，CdS，CaS，Y 2 S 3，Ga 2 S 3， SrS，BaS，ZnO，Y 2 O 3，AlN，GaN，InN，ZnSe，ZnTe和SrGa 2 S 4 第一杂质元素是Cu，Ag，Au，Pt和Si中的任一种; 第二杂质元素是F，Cl，Br，I，B，Al，Ga，In和Tl中的任一种; 并且第三杂质元素是Li，Na，K，Rb，Cs，N，P，As，Sb和Bi中的任一种。

公开(公告)号：US20080157032A1

公开(公告)日：2008-07-03

申请号：US11873041

申请日：2007-10-16

申请人： Junichiro SAKATA ,  Yoshiaki YAMAMOTO ,  Yayoi TOYOSUMI

发明人： Junichiro SAKATA ,  Yoshiaki YAMAMOTO ,  Yayoi TOYOSUMI

IPC分类号： C09K11/64

CPC分类号： C09K11/641

摘要： There has been a problem in that kinds of conventional light-emitting materials are not sufficient; therefore, choices of materials and manufacturers of light emitting materials are limited, resulting in an expensive light-emitting device. The present invention provides a novel method for manufacturing a light-emitting material suitable for mass production that can be manufactured at a low cost, and a novel light-emitting material which can provide light emission with high intensity. A mixture in which CuAlS2 is added in a small amount into ZnS as a base material is put in a reaction container. Then, the reaction container is hermetically sealed and the mixture is baked. Note that the reaction container is preferably hermetically sealed in a state where a reduced pressure is held in the reaction container. Further, in a light-emitting element using a light-emitting material obtained, electroluminescence with high luminance can be obtained.

摘要翻译： 存在这种常规发光材料种类不足的问题。 因此，发光材料的材料和制造商的选择受到限制，导致昂贵的发光装置。 本发明提供了可以低成本制造适合于批量生产的发光材料的新型制造方法，以及能够提供高强度发光的新颖的发光材料。 将CuAlS 2 O 3少量添加到作为基材的ZnS中的混合物放入反应容器中。 然后，将反应容器密封并将混合物烘烤。 注意，反应容器优选在反应容器中保持减压的状态下气密密封。 此外，在使用得到的发光材料的发光元件中，可以获得高亮度的电致发光。