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公开(公告)号：US20100006940A1
公开(公告)日：2010-01-14
申请号：US12497720
申请日：2009-07-06
IPC分类号： H01L29/786 , H01L27/12 , H01L21/762
CPC分类号： H01L27/1218 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/0649 , H01L29/66772 , H01L29/78 , H01L29/78603 , H01L31/0352
摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.
摘要翻译： 本发明的目的是提供一种具有半导体层的SOI衬底，即使在使用玻璃衬底作为基底衬底时也可以实际使用。 另一个目的是提供一种使用这种SOI衬底具有高可靠性的半导体器件。 在用作SOI衬底的基底衬底的玻璃衬底的至少一个表面上形成改变的层，以形成SOI衬底。 通过用包括盐酸，硫酸或硝酸的溶液清洗玻璃基板，在玻璃基板的至少一个表面上形成改变的层。 改变的层在其组成中具有较高比例的氧化硅，并且具有比玻璃基底更低的密度。
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公开(公告)号：US20110316082A1
公开(公告)日：2011-12-29
申请号：US13230086
申请日：2011-09-12
IPC分类号： H01L29/786 , H01L29/02
CPC分类号： H01L27/1218 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/0649 , H01L29/66772 , H01L29/78 , H01L29/78603 , H01L31/0352
摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.
摘要翻译： 本发明的目的是提供一种具有半导体层的SOI衬底，即使在使用玻璃衬底作为基底衬底时也可以实际使用。 另一个目的是提供一种使用这种SOI衬底具有高可靠性的半导体器件。 在用作SOI衬底的基底衬底的玻璃衬底的至少一个表面上形成改变的层，以形成SOI衬底。 通过用包括盐酸，硫酸或硝酸的溶液清洗玻璃基板，在玻璃基板的至少一个表面上形成改变的层。 改变的层在其组成中具有较高比例的氧化硅，并且具有比玻璃基底更低的密度。
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公开(公告)号：US20090072343A1
公开(公告)日：2009-03-19
申请号：US12207634
申请日：2008-09-10
申请人： Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO , Akihisa SHIMOMURA , Eiji HIGA , Tatsuya MIZOI , Yoji NAGANO , Fumito ISAKA , Tetsuya KAKEHATA , Shunpei YAMAZAKI
发明人： Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO , Akihisa SHIMOMURA , Eiji HIGA , Tatsuya MIZOI , Yoji NAGANO , Fumito ISAKA , Tetsuya KAKEHATA , Shunpei YAMAZAKI
IPC分类号： H01L29/00
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/76254 , H01L21/84 , H01L27/1214 , H01L29/4908 , H01L29/66772 , H01L29/78603 , H01L29/78654
摘要： A high-performance semiconductor device using an SOI substrate in which a low-heat-resistance substrate is used as a base substrate. Further, a high-performance semiconductor device formed without using chemical polishing. Further, an electronic device using the semiconductor device. An insulating layer over an insulating substrate, a bonding layer over the insulating layer, and a single-crystal semiconductor layer over the bonding layer are included, and the arithmetic-mean roughness of roughness in an upper surface of the single-crystal semiconductor layer is greater than or equal to 1 nm and less than or equal to 7 nm. Alternatively, the root-mean-square roughness of the roughness may be greater than or equal to 1 nm and less than or equal to 10 nm. Alternatively, a maximum difference in height of the roughness may be greater than or equal to 5 nm and less than or equal to 250 nm.
摘要翻译： 使用其中使用低耐热性衬底作为基底的SOI衬底的高性能半导体器件。 而且，不用化学抛光而形成的高性能半导体器件。 此外，使用该半导体器件的电子设备。 包括绝缘基板上的绝缘层，绝缘层上的接合层和接合层上的单晶半导体层，单晶半导体层上表面的运算平均粗糙度为 大于或等于1nm且小于或等于7nm。 或者，粗糙度的均方根粗糙度可以大于或等于1nm且小于或等于10nm。 或者，粗糙度的最大高度差可以大于或等于5nm且小于或等于250nm。
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公开(公告)号：US20110027968A1
公开(公告)日：2011-02-03
申请号：US12899993
申请日：2010-10-07
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/31662 , H01L21/76254 , H01L21/8221 , H01L21/84 , H01L27/0688 , H01L27/1203 , H01L27/1214 , H01L27/1229 , H01L29/66772 , H01L2224/16225 , H01L2224/16227 , H01L2224/32245 , H01L2224/73253 , H01L2924/00011 , H01L2924/00014 , H01L2224/13099 , H01L2224/29099 , H01L2224/80001
摘要： A semiconductor device including a plurality of field-effect transistors which are stacked with a planarization layer interposed therebetween over a substrate having an insulating surface, in which semiconductor layers in the plurality of field-effect transistors are separated from semiconductor substrates, and the semiconductor layers are bonded to an insulating layer formed over the substrate having an insulating surface or an insulating layer formed over the planarization layer.
摘要翻译： 一种半导体器件，包括多个场效应晶体管，所述多个场效应晶体管在其间具有绝缘表面的衬底上层叠有平坦化层，所述多个场效应晶体管中的半导体层与半导体衬底分离，并且所述半导体层 被结合到形成在具有形成在平坦化层上的绝缘表面或绝缘层的衬底上的绝缘层。
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公开(公告)号：US20090098739A1
公开(公告)日：2009-04-16
申请号：US12244414
申请日：2008-10-02
IPC分类号： H01L21/31
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： An object of the present invention is to provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even where a substrate having a low upper temperature limit such as a glass substrate is used. The manufacturing method compromises the steps of preparing a semiconductor substrate provided with a bonding layer formed on a surface thereof and a separation layer formed at a predetermined depth from the surface thereof, bonding the bonding layer to the base substrate having a distortion point of 700° C. or lower so that the semiconductor substrate and the base substrate face each other, and separating a part of the semiconductor substrate at the separation layer by heat treatment in order to form a single-crystal semiconductor layer over the base substrate. In the manufacturing method, a substrate which shrinks isotropically at least by the heat treatment is used as the base substrate.
摘要翻译： 本发明的目的是提供一种制造具有半导体层的SOI衬底的方法，即使在使用诸如玻璃衬底的上限温度低的衬底的情况下也可以使用。 制造方法损害了制备其表面上形成有接合层的半导体衬底和从其表面形成在预定深度的分离层的步骤，将接合层粘合到具有700°的变形点的基底 C.或更低，使得半导体衬底和基底基板彼此面对，并且通过热处理在分离层处分离半导体衬底的一部分，以在基底衬底上形成单晶半导体层。 在制造方法中，使用至少通过热处理各向同性收缩的基板作为基底。
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6.发明申请公开(公告)号：US20120025274A1
公开(公告)日：2012-02-02
申请号：US13267024
申请日：2011-10-06
申请人： Hideto OHNUMA , Tetsuya KAKEHATA , Yoichi IIKUBO
发明人： Hideto OHNUMA , Tetsuya KAKEHATA , Yoichi IIKUBO
IPC分类号： H01L29/772 , H01L29/04
CPC分类号： H01L21/76254 , H01L21/84
摘要： An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side.
摘要翻译： 提供了即使使用诸如玻璃基板的具有低的上限温度的基板也可以在实际应用中使用具有SOI层的SOI衬底。 提供了使用这种SOI衬底的半导体器件。 在将单晶半导体层接合到具有绝缘表面的基板或绝缘基板上时，使用在有一个或两个表面上形成键的有机硅烷作为材料形成的氧化硅膜。 根据本发明，可以使用具有700℃以上的上限温度的基板，例如玻璃基板，并且可以获得与基板强结合的SOI层。 换句话说，单晶半导体层可以形成在每侧长于1米的大面积基板上。
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公开(公告)号：US20090111248A1
公开(公告)日：2009-04-30
申请号：US12247487
申请日：2008-10-08
IPC分类号： H01L21/02
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02686 , H01L21/268 , H01L21/302 , H01L21/3065 , H01L21/84
摘要： A damaged region is formed by generation of plasma by excitation of a source gas, and by addition of ion species contained in the plasma from one of surfaces of a single crystal semiconductor substrate; an insulating layer is formed over the other surface of the single crystal semiconductor substrate; a supporting substrate is firmly attached to the single crystal semiconductor substrate so as to face the single crystal semiconductor substrate with the insulating layer interposed therebetween; separation is performed at the damaged region into the supporting substrate to which a single crystal semiconductor layer is attached and part of the single crystal semiconductor substrate by heating of the single crystal semiconductor substrate; dry etching is performed on a surface of the single crystal semiconductor layer attached to the supporting substrate; the single crystal semiconductor layer is recrystallized by irradiation of the single crystal semiconductor layer with a laser beam to melt at least part of the single crystal semiconductor layer.
摘要翻译： 通过源气体的激发产生等离子体并通过从单晶半导体衬底的表面之一添加包含在等离子体中的离子种类而形成损伤区域; 在单晶半导体衬底的另一个表面上形成绝缘层; 支撑衬底牢固地附接到单晶半导体衬底，以便在其间插入绝缘层的单晶半导体衬底; 通过加热单晶半导体衬底，在损伤区域处分离成与单晶半导体层相连的支撑衬底和部分单晶半导体衬底; 在附着于支撑基板的单晶半导体层的表面进行干蚀刻， 通过用激光束照射单晶半导体层来使单晶半导体层重结晶，从而熔化至少一部分单晶半导体层。
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公开(公告)号：US20110073934A1
公开(公告)日：2011-03-31
申请号：US12963847
申请日：2010-12-09
申请人： Tamae TAKANO , Tetsuya KAKEHATA , Shunpei YAMAZAKI
发明人： Tamae TAKANO , Tetsuya KAKEHATA , Shunpei YAMAZAKI
IPC分类号： H01L29/792
CPC分类号： H01L27/1157 , H01L27/105 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L27/1214 , H01L27/1251 , H01L27/13 , H01L29/4234 , H01L29/792 , H01L29/7923
摘要： The invention provides a semiconductor device and its manufacturing method in which a memory transistor and a plurality of thin film transistors that have gate insulating films with different thicknesses are fabricated over a substrate. The invention is characterized by the structural difference between the memory transistor and the plurality of thin film transistors. Specifically, the memory transistor and some of the plurality of thin film transistors are provided to have a bottom gate structure while the other thin film transistors are provided to have a top gate structure, which enables the reduction of characteristic defects of the transistor and simplification of its manufacturing process.
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公开(公告)号：US20100075470A1
公开(公告)日：2010-03-25
申请号：US12550540
申请日：2009-08-31
申请人： Suguru OZAWA , Atsuo ISOBE , Takashi HAMADA , Junpei MOMO , Hiroaki HONDA , Takashi SHINGU , Tetsuya KAKEHATA
发明人： Suguru OZAWA , Atsuo ISOBE , Takashi HAMADA , Junpei MOMO , Hiroaki HONDA , Takashi SHINGU , Tetsuya KAKEHATA
IPC分类号： H01L21/336 , H01L21/762
CPC分类号： H01L21/76254
摘要： After a single crystal semiconductor layer provided over a base substrate by attaching is irradiated with a laser beam, characteristics thereof are improved by first heat treatment, and after adding an impurity element imparting conductivity to the single crystal semiconductor layer, second heat treatment is performed at lower temperature than that of the first heat treatment.
摘要翻译： 在通过附着设置在基底基板上的单晶半导体层通过激光照射之后，通过第一热处理来提高其特性，并且在向单晶半导体层添加赋予导电性的杂质元素之后，进行第二热处理 比第一次热处理温度低。
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10.发明申请公开(公告)号：US20090102008A1
公开(公告)日：2009-04-23
申请号：US12249437
申请日：2008-10-10
申请人： Tetsuya KAKEHATA
发明人： Tetsuya KAKEHATA
IPC分类号： H01L29/00 , H01L21/762
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/321 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： A semiconductor substrate having an SOI layer is provided. Between an SOI layer and a glass substrate, a bonding layer is provided which is formed of one layer or a plurality of layers of phosphosilicate glass, borosilicate glass, and/or borophosphosilicate glass, using organosilane as one material by a thermal CVD method at a temperature of 500° C. to 800° C.
摘要翻译： 提供具有SOI层的半导体衬底。 在SOI层和玻璃基板之间，提供由一层或多层磷硅酸盐玻璃，硼硅酸盐玻璃和/或硼磷硅酸盐玻璃形成的接合层，使用有机硅烷作为一种材料，通过热CVD法在 温度为500°C至800°C
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