公开(公告)号：US20140030896A1

公开(公告)日：2014-01-30

申请号：US13560366

申请日：2012-07-27

Applicant: Tetsuya KAMIMURA

Inventor： Tetsuya KAMIMURA

IPC: H01L21/306 ,  C09K13/06 ,  C09K13/00

CPC classification number: C09K13/00 ,  C09K13/06 ,  H01L21/02063 ,  H01L21/31144 ,  H01L21/32134

Abstract: A method of etching a semiconductor substrate, having the steps of: providing a semiconductor substrate having a first layer containing Ti and a second layer containing at least one of Cu, SiO, SiN, SiOC and SiON; providing an etching liquid containing, in an aqueous medium, a basic compound composed of an organic amine compound and an oxidizing agent, the etching liquid having a pH from 7 to 14; and applying the etching liquid to the semiconductor substrate to selectively etch the first layer of the semiconductor substrate.

Abstract translation: 一种蚀刻半导体衬底的方法，具有以下步骤：提供具有含有Ti的第一层和包含Cu，SiO，SiN，SiOC和SiON中的至少一种的第二层的半导体衬底; 提供在水性介质中含有由有机胺化合物和氧化剂构成的碱性化合物的蚀刻液，所述蚀刻液的pH为7〜14; 以及将所述蚀刻液施加到所述半导体衬底以选择性地蚀刻所述半导体衬底的所述第一层。

公开(公告)号：US20120108485A1

公开(公告)日：2012-05-03

申请号：US13281885

申请日：2011-10-26

Applicant: Tetsuya KAMIMURA

Inventor： Tetsuya KAMIMURA

IPC: G03F7/42

CPC classification number: C11D3/0052 ,  C11D3/0094 ,  C11D3/042 ,  C11D3/046 ,  C11D3/048 ,  C11D3/10 ,  C11D3/2075 ,  C11D3/2096 ,  C11D3/3942 ,  C11D7/08 ,  C11D7/10 ,  C11D7/105 ,  C11D7/12 ,  C11D7/265 ,  C11D7/267 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425 ,  H01L21/31133

Abstract: A multi-agent type cleaning kit for applying to semiconductor substrates, which contains a foaming agent having an alkylene carbonate and a carbonic acid salt, a foaming aid having an acidic compound, and an oxidizing agent; at least the foaming agent is mixed with the foaming aid upon using for the cleaning of a semiconductor substrate, in combination with the oxidizing agent.

Abstract translation: 一种用于应用于包含具有碳酸亚烷基酯和碳酸盐的发泡剂的半导体衬底的多剂型清洁套件，具有酸性化合物的发泡助剂和氧化剂; 与氧化剂组合时，至少将发泡剂与发泡助剂混合，用于清洁半导体衬底。

公开(公告)号：US20120028467A1

公开(公告)日：2012-02-02

申请号：US13192982

申请日：2011-07-28

Applicant: Tetsuya KAMIMURA

Inventor： Tetsuya KAMIMURA

IPC: H01L21/306 ,  C09K13/04 ,  C09K13/06 ,  H01L21/304

CPC classification number: H01L21/31053 ,  C09G1/02 ,  H01L21/823437 ,  H01L21/823828

Abstract: Provided is a polishing fluid that has a fast polishing rate, and can selectively suppress polishing of layers including polysilicon or modified polysilicon during the chemical mechanical polishing in the manufacture of semiconductor integrated circuits, and a polishing method using the same. A polishing fluid used for the chemical mechanical polishing in which each of the components represented by the following (1) and (2) is included, the pH is 1.5 to 5.0, and a polishing workpiece can be polished in a range of a ratio represented by RR (other)/RR (p-Si) when the polishing rate of the first layer is RR (p-Si), and the polishing rate of the second layer is RR (other) of 1.5 to 200. (1) Colloidal silica particles (2) At least one inorganic phosphate compound selected from phosphoric acid, pyrophosphoric acid, and polyphosphoric acid.

Abstract translation: 提供了具有快速抛光速率的抛光液，并且可以选择性地抑制在半导体集成电路的制造中的化学机械抛光期间包括多晶硅或改性多晶硅的层的抛光以及使用其的抛光方法。 用于化学机械抛光的抛光液，其中包括由以下（1）和（2）表示的每个组分，pH为1.5至5.0，并且可以以表示的比例的范围抛光抛光工件 当第一层的抛光速率为RR（p-Si）时，RR（其他）/ RR（p-Si），第二层的抛光速率为RR（其他）为1.5〜200。（1）胶体 二氧化硅颗粒（2）至少一种选自磷酸，焦磷酸和多磷酸的无机磷酸盐化合物。

公开(公告)号：US20100167547A1

公开(公告)日：2010-07-01

申请号：US12639015

申请日：2009-12-16

Applicant: Tetsuya KAMIMURA

Inventor： Tetsuya KAMIMURA

IPC: H01L21/302 ,  C09K13/00

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

Abstract: A polishing liquid for a chemical mechanical polishing of a semiconductor device includes (a) a carboxylic acid compound having one or more carboxy groups, (b) colloidal silica particles having a ζ potential of −10 mV to −35 mV when used in the polishing liquid, (c) a benzotriazole derivative, (d) an anionic surfactant, and (e) an oxidizing agent, and the polishing liquid has a pH of from 5.0 to 8.0.

Abstract translation: 用于半导体器件的化学机械抛光的抛光液包括（a）具有一个或多个羧基的羧酸化合物，（b）当用于抛光时具有-10mV至-35mV的ζ电位的胶体二氧化硅颗粒 液体，（c）苯并三唑衍生物，（d）阴离子表面活性剂和（e）氧化剂，所述研磨液的pH为5.0〜8.0。

公开(公告)号：US20110244684A1

公开(公告)日：2011-10-06

申请号：US13071539

申请日：2011-03-25

Applicant: Tetsuya KAMIMURA

Inventor： Tetsuya KAMIMURA

IPC: H01L21/306 ,  C09K13/00

CPC classification number: H01L21/31053 ,  C09G1/02 ,  C09K3/1463

Abstract: Provided is a polishing liquid which is used for chemical mechanical polishing of a body to be polished having a layer containing polysilicon or a modified polysilicon, and using which the polishing rate of a layer containing a silicon-based material other than polysilicon is high and polishing of the layer containing polysilicon can be selectively suppressed. The polishing liquid includes components (A), (B), and (C), has a pH of from 1.5 to 7.0, and is capable of selectively polishing a second layer with respect to a first layer: (A) colloidal silica particles having a negative ζ potential; (B) phosphoric acid or an organic phosphonic acid compound represented by the following Formula (1) or (2); and (C) an anionic surfactant having at least one group represented by the following Formulae (I) to (IV): R2—C(R3)3-a—(PO3H2)a  Formula (1): R4—N(R5)m—(CH2—PO3H2)n  Formula (2): —PO3X2  Formula (I): —OPO3X2  Formula (II): —COOX  Formula (III): —SO3X  Formula (IV).

Abstract translation: 本发明提供一种抛光液，其用于具有含多晶硅层或改性多晶硅层的被研磨体的化学机械抛光，并且使用其中含有多晶硅以外的硅系材料的层的研磨速度高并进行抛光 可以选择性地抑制包含多晶硅的层。 抛光液包含成分（A），（B）和（C），其pH为1.5〜7.0，能够相对于第一层选择性地研磨第二层：（A）具有 负ζ电位; （B）磷酸或由下式（1）或（2）表示的有机膦酸化合物; （C）具有至少一个由下式（I）至（IV）表示的基团的阴离子表面活性剂：R2-C（R3）3-a-（PO3H2）a式（1）：R4-N（R5） 式（II）：-PO 3 X 2式（I）：-OPO 3 X 2式（II）：-COOX式（III）：-SO 3 X式（IV）。

公开(公告)号：US20090078908A1

公开(公告)日：2009-03-26

申请号：US12209409

申请日：2008-09-12

Applicant: Toshiyuki SAIE ,  Tetsuya KAMIMURA

Inventor： Toshiyuki SAIE ,  Tetsuya KAMIMURA

IPC: C09K13/00

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/3212

Abstract: A polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, which liquid includes: a quaternary ammonium cation; a corrosion inhibiting agent; a polymer compound having a sulfo group at a terminal; inorganic particles; and an organic acid, the pH of the polishing liquid being in the range of 1 to 7.

Abstract translation: 一种用于抛光半导体集成电路的阻挡层的抛光液，该液体包括：季铵阳离子; 腐蚀抑制剂; 末端具有磺基的高分子化合物; 无机颗粒; 和有机酸，研磨液的pH在1〜7的范围内。

公开(公告)号：US20120073610A1

公开(公告)日：2012-03-29

申请号：US13245096

申请日：2011-09-26

Applicant: Tetsuya KAMIMURA

Inventor： Tetsuya KAMIMURA

IPC: B08B3/00 ,  C11D7/60

CPC classification number: H01L21/31133 ,  C11D11/0047 ,  G03F7/423 ,  H01L21/02071

Abstract: A cleaning agent for a semiconductor substrate, which is capable of exerting cleaning power equivalent to that of an SPM cleaning agent, greatly improving damage of a semiconductor substrate by the SPM cleaning agent, and efficiently stripping and removing impurities adhered to the surface of the semiconductor substrate, particularly attached substances such as an ion-implanted resist, a cleaning method using the cleaning agent, and a method for producing a semiconductor element are provided. The cleaning agent for a semiconductor substrate comprises sulfuric acid, hydrogen peroxide and an alkylene carbonate. The method for cleaning a semiconductor substrate comprises cleaning the semiconductor substrate with sulfuric acid, hydrogen peroxide and an alkylene carbonate in combination.

Abstract translation: 能够施加与SPM清洗剂相当的清洗能力的半导体基板用清洗剂，大大提高了SPM清洗剂对半导体基板的损伤，有效地剥离和去除附着在半导体表面上的杂质 衬底，特别附着的物质，例如离子注入的抗蚀剂，使用该清洁剂的清洁方法，以及制造半导体元件的方法。 用于半导体衬底的清洁剂包括硫酸，过氧化氢和碳酸亚烷基酯。 清洗半导体衬底的方法包括用硫酸，过氧化氢和碳酸亚烷基酯组合清洗半导体衬底。

公开(公告)号：US20090004863A1

公开(公告)日：2009-01-01

申请号：US12146031

申请日：2008-06-25

Applicant: Tetsuya KAMIMURA

Inventor： Tetsuya KAMIMURA

IPC: H01L21/306 ,  C09K13/00

CPC classification number: C09G1/02 ,  C23F3/04 ,  C23F3/06 ,  H01L21/3212

Abstract: The present invention provides a polishing liquid for polishing a ruthenium-containing barrier layer, the polishing liquid being used in chemical mechanical polishing for a semi-conductor device having a ruthenium-containing barrier layer and conductive metal wiring lines on a surface thereof, the polishing liquid comprising an oxidizing agent; and a polishing particulate having hardness of 5 or higher on the Mohs scale and having a composition in which a main component is other than silicon dioxide (SiO2). The present invention also provides a polishing method for chemical mechanical polishing of a semi-conductor device, the method contacting the polishing liquid with the surface of a substrate to be polished, and polishing the surface to be polished such that contacting pressure from a polishing pad to the surface to be polished is from 0.69 kPa to 20.68 kPa.

Abstract translation: 本发明提供了一种用于抛光含钌阻挡层的抛光液，该抛光液用于具有含钌阻挡层和导电金属布线在其表面上的半导体器件的化学机械抛光，抛光 包含氧化剂的液体; 以及Mohs规格的硬度为5以上的抛光粒子，其主成分为二氧化硅（SiO 2）以外的成分。 本发明还提供了一种用于半导体器件的化学机械抛光的抛光方法，该方法使抛光液体与待抛光的基底的表面接触，并抛光待抛光的表面，使得来自抛光垫的接触压力 至待抛光表面为0.69kPa至20.68kPa。

公开(公告)号：US20120252214A1

公开(公告)日：2012-10-04

申请号：US13517619

申请日：2012-06-14

Applicant: Tetsuya KAMIMURA

Inventor： Tetsuya KAMIMURA

IPC: H01L21/306

CPC classification number: C09K3/1463 ,  C09G1/02 ,  C09K13/00 ,  H01L21/3212

Abstract: A polishing liquid is provided with which a polishing rate relative to a conductive metal wiring typically represented by a copper wiring on a substrate having a barrier layer containing manganese and/or a manganese alloy and an insulating layer on the surface (particularly, copper oxide formed at the boundary) is decreased and with which less step height between the conductive metal wiring and the insulating layer is formed, and a polishing method using the polishing liquid is also provided. The polishing liquid includes: colloidal silica particles exhibiting a positive ζ potential at the surface thereof; a corrosion inhibiting agent; and an oxidizing agent, in which the polishing liquid is used in a chemical mechanical polishing process for a semiconductor device having, on a surface thereof, a barrier layer containing manganese and/or a manganese alloy, a conductive metal wiring, and an insulating layer.

Abstract translation: 提供了一种抛光液，其相对于通常由具有含锰和/或锰合金的阻挡层和表面上的绝缘层的基板上的铜布线（通常由形成的铜氧化物形成的导电金属布线） 在边界处）减少，并且形成导电金属布线和绝缘层之间的较小台阶高度，并且还提供使用抛光液的抛光方法。 抛光液包括：表面具有正ζ电位的胶体二氧化硅颗粒; 腐蚀抑制剂; 以及氧化剂，其中所述抛光液用于半导体器件的化学机械抛光工艺中，所述半导体器件在其表面上具有含有锰和/或锰合金的阻挡层，导电金属布线和绝缘层 。

公开(公告)号：US20090246957A1

公开(公告)日：2009-10-01

申请号：US12406117

申请日：2009-03-18

Applicant: Tetsuya KAMIMURA

Inventor： Tetsuya KAMIMURA

IPC: H01L21/306 ,  C09K13/00

CPC classification number: C09K3/1463 ,  C09G1/02 ,  C09K13/00 ,  H01L21/3212

Abstract: A polishing liquid is provided with which a polishing rate relative to a conductive metal wiring typically represented by a copper wiring on a substrate having a barrier layer containing manganese and/or a manganese alloy and an insulating layer on the surface (particularly, copper oxide formed at the boundary) is decreased and with which less step height between the conductive metal wiring and the insulating layer is formed, and a polishing method using the polishing liquid is also provided. The polishing liquid includes: colloidal silica particles exhibiting a positive ζ potential at the surface thereof, a corrosion inhibiting agent; and an oxidizing agent, in which the polishing liquid is used in a chemical mechanical polishing process for a semiconductor device having, on a surface thereof, a barrier layer containing manganese and/or a manganese alloy, a conductive metal wiring, and an insulating layer.

Abstract translation: 提供了一种抛光液，其相对于通常由具有含锰和/或锰合金的阻挡层和表面上的绝缘层的基板上的铜布线（通常由形成的铜氧化物形成的导电金属布线） 在边界处）减少，并且形成导电金属布线和绝缘层之间的较小台阶高度，并且还提供使用抛光液的抛光方法。 抛光液包括：表面具有正ζ电位的胶体二氧化硅颗粒，腐蚀抑制剂; 以及氧化剂，其中所述抛光液用于半导体器件的化学机械抛光工艺中，所述半导体器件在其表面上具有含有锰和/或锰合金的阻挡层，导电金属布线和绝缘层 。