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1.发明授权Semiconductor device, driver circuit and manufacturing method of semiconductor device 有权半导体器件，驱动电路及半导体器件的制造方法公开(公告)号：US07339236B2
公开(公告)日：2008-03-04
申请号：US11352344
申请日：2006-02-13
IPC分类号： H01L27/01 , H01L29/76 , H01L21/336
CPC分类号： H01L29/78606 , H01L21/84 , H01L27/12 , H01L29/0847 , H01L29/1083 , H01L29/66659 , H01L29/7835 , H01L29/78624
摘要： The present invention provides a semiconductor technology capable of suppressing an increase in threshold voltage of a transistor and, also, improving a withstand voltage between a source region and a drain region. Source and drain regions of a p channel type MOS transistor are formed in an n− type semiconductor layer in an SOI substrate. In addition, an n type impurity region is formed in the semiconductor layer. The impurity region is formed over the entire bottom of the source region at a portion directly below this source region, and is also formed directly below the semiconductor layer between the source region and the drain region. A peak position of an impurity concentration in the impurity region is set below a lowest end of the source region at a portion directly below an upper surface of the semiconductor layer between the source region and the drain region.
摘要翻译： 本发明提供一种半导体技术，能够抑制晶体管的阈值电压的增加，并且还提高源极区域和漏极区域之间的耐受电压。 在SOI衬底中的n + O型半导体层中形成p沟道型MOS晶体管的源极和漏极区域。 此外，在半导体层中形成n型杂质区。 杂质区域形成在源极区域的正下方的源极区域的整个底部上，并且也形成在源极区域和漏极区域之间的半导体层的正下方。 将杂质区域中的杂质浓度的峰值位置设定在源极区域和源极区域之间的半导体层的正上方的正下方的源极区域的最下端。
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2.发明申请Semiconductor device, driver circuit and manufacturing method of semiconductor device 有权半导体器件，驱动电路及半导体器件的制造方法公开(公告)号：US20060180862A1
公开(公告)日：2006-08-17
申请号：US11352344
申请日：2006-02-13
CPC分类号： H01L29/78606 , H01L21/84 , H01L27/12 , H01L29/0847 , H01L29/1083 , H01L29/66659 , H01L29/7835 , H01L29/78624
摘要： The present invention provides a semiconductor technology capable of suppressing an increase in threshold voltage of a transistor and, also, improving a withstand voltage between a source region and a drain region. Source and drain regions of a p channel type MOS transistor are formed in an n− type semiconductor layer in an SOI substrate. In addition, an n type impurity region is formed in the semiconductor layer. The impurity region is formed over the entire bottom of the source region at a portion directly below this source region, and is also formed directly below the semiconductor layer between the source region and the drain region. A peak position of an impurity concentration in the impurity region is set below a lowest end of the source region at a portion directly below an upper surface of the semiconductor layer between the source region and the drain region.
摘要翻译： 本发明提供一种半导体技术，能够抑制晶体管的阈值电压的增加，并且还提高源极区域和漏极区域之间的耐受电压。 在SOI衬底中的n + O型半导体层中形成p沟道型MOS晶体管的源极和漏极区域。 此外，在半导体层中形成n型杂质区。 杂质区域形成在源极区域的正下方的源极区域的整个底部上，并且也形成在源极区域和漏极区域之间的半导体层的正下方。 将杂质区域中的杂质浓度的峰值位置设定在源极区域和源极区域之间的半导体层的正上方的正下方的源极区域的最下端。
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公开(公告)号：US06518158B1
公开(公告)日：2003-02-11
申请号：US09699463
申请日：2000-10-31
IPC分类号： H01L2128
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： The method for manufacturing a semiconductor device includes the steps of: removing an oxide film in a region including a fuse region at the formation of an opening for the formation of a vertical interconnection in an oxide film serving as an upper insulating layer; and forming the vertical interconnection for electrically connecting interconnection layers below and above the oxide film and the interconnection layer placed on an upper side of the oxide film as one upper conductive layer at the same time.
摘要翻译： 半导体器件的制造方法包括以下步骤：在形成用于形成用作上绝缘层的氧化膜中的垂直互连的开口的开口的区域中去除包含熔丝区域的区域中的氧化膜; 并且形成用于将氧化膜的下方和上方的互连层和布置在氧化物膜的上侧上的互连层电连接作为一个上导电层的垂直互连。
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4.发明授权公开(公告)号：US06693344B1
公开(公告)日：2004-02-17
申请号：US09642225
申请日：2000-08-21
IPC分类号： H01L2900
CPC分类号： H01L21/8222 , H01L27/0825
摘要： A base of a low breakdown voltage npn bipolar transistor has p+ diffusion layers. A field insulating layer is formed on the p+ diffusion layer located between the p+ diffusion layer and an emitter, while the p+ diffusion layer encloses the surface of the emitter and has a window part immediately under the emitter. Thus, a semiconductor device and a method of fabricating the same capable of suppressing dispersion of a current amplification factor hFE in a wafer plane of the low breakdown voltage transistor and fabricating the low breakdown voltage transistor and a high breakdown voltage transistor through simple steps are obtained.
摘要翻译： 低耐压npn双极晶体管的基极具有p +扩散层。 在位于p +扩散层和发射极之间的p +扩散层上形成场绝缘层，而p +扩散层包围发射极的表面，并且在发射极的正下方具有窗口部分 。 因此，获得能够抑制电流放大系数hFE在低击穿电压晶体管的晶片平面中的分散并且通过简单的步骤制造低击穿电压晶体管和高击穿电压晶体管的半导体器件及其制造方法 。
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公开(公告)号：US06573582B2
公开(公告)日：2003-06-03
申请号：US09986906
申请日：2001-11-13
IPC分类号： H01L27095
CPC分类号： H01L21/761 , H01L27/0766
摘要： A bipolar transistor is formed on a semiconductor substrate. A Schottky diode is formed in the collector region of the bipolar transistor. The collector region and the semiconductor substrate are isolated in potential from each other by potential isolating layers.
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公开(公告)号：US06191466B1
公开(公告)日：2001-02-20
申请号：US09395939
申请日：1999-09-14
IPC分类号： H01L21336
CPC分类号： H01L27/0611 , H01L21/761 , H01L29/8611
摘要： A semiconductor device which has few peripheral element malfunctions and superior performance is obtained. The semiconductor device includes a p-type buried layer on a main surface of a semiconductor substrate, an n-type cathode region provided on the p-type buried layer, and a p-type anode region in contact with the side surface of the n-type cathode region, the p-type buried layer being higher than the p-type anode region in acceptor content, and the p-type buried layer being in contact with the bottom surfaces of the anode and cathode regions.
摘要翻译： 获得了具有极少的外围元件故障和优异性能的半导体器件。 半导体器件包括在半导体衬底的主表面上的p型掩埋层，设置在p型掩埋层上的n型阴极区域和与n型阴极区域接触的p型阳极区域 型阴极区，p型埋层比受体含量高于p型阳极区，p型掩埋层与阳极和阴极区的底表面接触。
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公开(公告)号：US20110224650A1
公开(公告)日：2011-09-15
申请号：US13040356
申请日：2011-03-04
IPC分类号： A61M25/01
CPC分类号： A61M25/0021 , A61B1/00078 , A61B8/12 , A61B8/445 , A61B8/4461 , A61M25/0013 , A61M25/0045 , A61M25/0051 , A61M25/0053 , A61M25/0054
摘要： A catheter comprising a sheath to be inserted into a living body, wherein the sheath includes a tubular reinforcement layer of at least one layer, which is formed with a spiral slit continuous from the distal side to the proximal side thereof; a termination end of the spiral slit is provided on the proximal side of the slit proximal portion at the site of the proximal side of the spiral slit; and at the same time, there is formed a slit termination portion in which inclination angle of the spiral slit with respect to the circumferential direction of the reinforcement layer is larger than that of the slit proximal portion
摘要翻译： 一种导管，其包括插入到生物体中的护套，其中所述护套包括至少一层的管状加强层，所述管状加强层形成有从其远端侧至其近侧连续的螺旋狭缝; 在螺旋狭缝的近侧的位置处，在狭缝基端部的基端侧设置有螺旋狭缝的终端; 并且同时形成有狭缝终止部，螺旋狭缝相对于加强层的周向的倾斜角度大于狭缝近端部的倾斜角度
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公开(公告)号：US20060248024A1
公开(公告)日：2006-11-02
申请号：US11411816
申请日：2006-04-27
CPC分类号： G06Q30/06 , G06Q30/0283
摘要： Provided is a system which supports appropriate price setting so that a value for a provider in a transaction and a value for a customer reach an agreement. A price setting system stores a provider cost Cp and a return Rc obtained by a customer to calculate a transaction value Vp for the provider and a transaction value Vc for the customer in accordance with an evaluation index (benefit-based, price ratio-based, or ROI-based). Then, the price setting system outputs information that supports the setting of a price P satisfying Vp>0 and Vc>0.
摘要翻译： 提供了一种支持适当价格设置的系统，使得交易中的供应商的价值和客户的价值达成一致。 价格设定系统存储由客户获得的供应商成本Cp和返回Rc，以根据评估指标（基于利益的，基于价格的，基于价格比的）来计算供应商的交易值Vp和客户的交易值Vc， 或基于ROI）。 然后，价格设定系统输出满足Vp> 0且Vc> 0的价格P的设定的信息。
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公开(公告)号：US20060004616A1
公开(公告)日：2006-01-05
申请号：US11141240
申请日：2005-06-01
IPC分类号： G06Q90/00
CPC分类号： G06Q10/00 , G06Q10/06311 , G06Q10/063112 , G06Q10/06315 , G06Q10/06375 , G06Q10/06398
摘要： A solution design method and system for designing solution specification and estimating a period and a price speedily on the basis of customer needs, the budget of solution, the target period of implementation of solution, etc. The customer budget or period is used as a constraint so that a gap between solution specification as the customer's request and solution specification in consideration of the constraint is clarified so that tasks and resources taking charge of each other are clarified to satisfy the quality required by the customer. Individual resource conditions are set in consideration of priority of each solution task. The settings themselves can be changed arbitrarily in accordance with the customer needs. The definition of resource ranks in each customer can be executed again on the prerequisite of the customer's request or the like. While the prerequisite is clarified, design of solution specification and estimation can be performed simultaneously without assignment of resources.
摘要翻译： 一种解决方案设计方法和系统，用于根据客户需求，解决方案预算，解决方案实施目标周期等快速设计解决方案规格和价格。客户预算或周期作为约束条件 从而明确了顾客要求和解决方案规格之间的解决方案规范之间的差距，从而明确了相互负责的任务和资源，以满足客户要求的质量。 考虑到每个解决方案任务的优先级设置个别资源条件。 设置本身可以根据客户需要任意改变。 每个客户的资源排名定义可以在客户请求等的先决条件下重新执行。 在阐明前提的前提下，可以同时进行解决方案规划和估计的设计，而无需分配资源。
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10.发明申请Apparatus, system and method for supporting formation of customer-value creating scenario 审中-公开用于支持形成客户价值创造场景的装置，系统和方法公开(公告)号：US20060235861A1
公开(公告)日：2006-10-19
申请号：US11386868
申请日：2006-03-23
IPC分类号： G06F17/00
CPC分类号： G06Q30/02
摘要： A value extracted on the basis of a customer demand supports description of an appealing scenario leading to a requirement and a solution. Examples of customer-values include that which appears to be welcome for a customer, that which appears to be pleasant, and an object, and such can form requirements necessary for accomplishing customer-values such as those which must be done by employees, top executives, etc. of a customer, and those which must be done by an end user who is a customer of a customer, together with solutions necessary for realization of requirements, etc., as a customer-value creating scenario view including a causal relation. In addition, in order to hold attribute models, which differ depending on kind of node such as value, requirement and solution, it is possible to carry out automatic node extraction by utilizing the attribute model.
摘要翻译： 基于客户需求提取的值支持导致需求和解决方案的吸引人的场景的描述。 客户价值观的例子包括对客户来说似乎是愉悦的客户价值观，以及客观价值观等，可以形成完成客户价值所必需的要求，如员工，高层管理人员必须做的 等等，以及作为客户客户的最终用户必须完成的那些，以及实现需求所需的解决方案等作为包括因果关系的客户价值创造场景视图。 另外，为了保持根据诸如值，需求和解决方案等节点的种类不同的属性模型，可以通过利用属性模型来执行自动节点提取。
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