公开(公告)号：US06884699B1

公开(公告)日：2005-04-26

申请号：US10148562

申请日：2000-10-06

申请人： Tetsuya Ogawa ,  Hidetada Tokioka ,  Junichi Nishimae ,  Tatsuki Okamoto ,  Yukio Sato ,  Mitsuo Inoue ,  Mitsutoshi Miyasaka ,  Hiroaki Jiroku

发明人： Tetsuya Ogawa ,  Hidetada Tokioka ,  Junichi Nishimae ,  Tatsuki Okamoto ,  Yukio Sato ,  Mitsuo Inoue ,  Mitsutoshi Miyasaka ,  Hiroaki Jiroku

IPC分类号： C23C14/58 ,  H01L21/20 ,  H01L21/336 ,  H01L21/00 ,  H01L21/331 ,  H01L21/26

CPC分类号： C23C14/5813 ,  B23K26/0604 ,  B23K26/0738 ,  B23K26/0838 ,  B23K26/352 ,  B23K2101/40 ,  B23K2103/52 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L29/66757 ,  Y10S438/969

摘要： A process for making a polycrystalline silicon film includes forming, on a glass substrate, an amorphous silicon film having a first region and a second region that contacts the first region, forming a first polycrystalline portion by irradiating the first region of the amorphous silicon film with laser light having a wavelength not less than 390 nm and not more than 640 nm and forming a second polycrystalline portion that contacts the first polycrystalline portion by irradiating the second region and the portion of the region of the first polycrystalline portion that contacts the second region of the amorphous silicon film with the laser light.

摘要翻译： 一种制造多晶硅膜的方法包括在玻璃基板上形成具有与第一区域接触的第一区域和第二区域的非晶硅膜，通过用非晶硅膜的第一区域照射非晶硅膜形成第一多晶部分， 具有不小于390nm且不大于640nm的波长的激光，并且通过照射第二区域和形成与第一多晶部分接触的第二多晶部分的区域的部分形成第二多晶部分， 具有激光的非晶硅膜。

公开(公告)号：US06602765B2

公开(公告)日：2003-08-05

申请号：US09875910

申请日：2001-06-08

申请人： Hiroaki Jiroku ,  Mitsutoshi Miyasaka ,  Hidetada Tokioka ,  Tetsuya Ogawa

发明人： Hiroaki Jiroku ,  Mitsutoshi Miyasaka ,  Hidetada Tokioka ,  Tetsuya Ogawa

IPC分类号： H01L2120

CPC分类号： H01L21/02686 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： An object is to fabricate high quality thin-film semiconductor devices at comparatively low temperatures. After providing a local heating system, an active semiconductor layer is formed, and melt crystallization is promoted by irradiating a pulsed laser onto the active semiconductor layer.

公开(公告)号：US06573161B1

公开(公告)日：2003-06-03

申请号：US09674645

申请日：2000-11-02

申请人： Mitsutoshi Miyasaka ,  Tetsuya Ogawa ,  Hidetada Tokioka ,  Yukio Satoh ,  Mitsuo Inoue ,  Tomohiro Sasagawa

发明人： Mitsutoshi Miyasaka ,  Tetsuya Ogawa ,  Hidetada Tokioka ,  Yukio Satoh ,  Mitsuo Inoue ,  Tomohiro Sasagawa

IPC分类号： H01L2120

CPC分类号： H01L21/02686 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757

摘要： A fabrication process is provided for semiconductor devices having a crystalline semiconductor film formed on a substrate, the semiconductor film being an active layer of a transistor and being mainly composed of silicon, and includes at least an underlevel protection layer fabrication step of forming a silicon oxide film as an underlevel protection layer on the substrate; a first processing step of forming a semiconductor film, which is mainly composed of silicon, on the underlevel protection layer; and a second processing step of irradiating a pulsed laser light on the semiconductor film. The semiconductor film is irradiated by a pulsed laser, the wavelength of the pulsed laser light is between 370 and 710 nm. As a result, using a low temperature process, high performance thin film semiconductor devices can be produced simply and reliably.

摘要翻译： 本发明提供一种半导体器件的制造方法，该半导体器件具有在基板上形成的结晶半导体膜，该半导体膜是主要由硅组成的晶体管的有源层，并且至少包括形成氧化硅的底层保护层制造步骤 膜作为衬底上的底层保护层; 在衬底保护层上形成主要由硅构成的半导体膜的第一处理步骤; 以及在半导体膜上照射脉冲激光的第二处理步骤。 半导体膜被脉冲激光照射，脉冲激光的波长在370和710nm之间。 结果，使用低温工艺，可以简单可靠地制造高性能薄膜半导体器件。

公开(公告)号：US06753548B2

公开(公告)日：2004-06-22

申请号：US10420779

申请日：2003-04-23

申请人： Tetsuya Ogawa ,  Hidetada Tokioka ,  Yukio Sato ,  Mitsuo Inoue ,  Tomohiro Sasagawa ,  Mitsutoshi Miyasaka

发明人： Tetsuya Ogawa ,  Hidetada Tokioka ,  Yukio Sato ,  Mitsuo Inoue ,  Tomohiro Sasagawa ,  Mitsutoshi Miyasaka

IPC分类号： H01L2904

CPC分类号： H01L27/1285 ,  B23K26/0732 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1296

摘要： The laser heat treatment of an amorphous or polycrystalline silicon film material is conducted by forming a laser beam generated from a pulse laser source having a wavelength of 350 nm to 800 nm into a linear beam having a width and a length, and directing the linear beam onto a film material formed on a substrate.

摘要翻译： 通过将具有350nm至800nm波长的脉冲激光源产生的激光束形成为具有宽度和长度的直线光束来进行非晶或多晶硅膜材料的激光热处理，并且引导线性光束 在形成在基板上的薄膜材料上。

公开(公告)号：US06521492B2

公开(公告)日：2003-02-18

申请号：US09876132

申请日：2001-06-08

申请人： Mitsutoshi Miyasaka ,  Hidetada Tokioka ,  Tetsuya Ogawa

发明人： Mitsutoshi Miyasaka ,  Hidetada Tokioka ,  Tetsuya Ogawa

IPC分类号： H01L2100

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： In the thin-film semiconductor device fabrication method according to the present invention, after forming an amorphous semiconductor film, the film is crystallized in the solid phase state, then a portion of the semiconductor film is molten by irradiating it with a pulsed laser beam having an absorption coefficient in amorphous silicon that is greater than the absorption coefficient in polysilicon. Thereby, polycrystalline thin-film semiconductor devices having superior characteristics can be fabricated.

公开(公告)号：US06566683B1

公开(公告)日：2003-05-20

申请号：US09708608

申请日：2000-11-09

申请人： Tetsuya Ogawa ,  Hidetada Tokioka ,  Yukio Sato ,  Mitsuo Inoue ,  Tomohiro Sasagawa ,  Mitsutoshi Miyasaka

发明人： Tetsuya Ogawa ,  Hidetada Tokioka ,  Yukio Sato ,  Mitsuo Inoue ,  Tomohiro Sasagawa ,  Mitsutoshi Miyasaka

IPC分类号： H01L2904

CPC分类号： H01L27/1285 ,  B23K26/0732 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1296

摘要： The laser heat treatment of an amorphous or polycrystalline silicon film material is conducted by forming a laser beam generated from a pulse laser source having a wavelength of 350 nm to 800 nm into a linear beam having a width and a length, and directing the linear beam onto a film material formed on a substrate.

摘要翻译： 通过将具有350nm至800nm波长的脉冲激光源产生的激光束形成为具有宽度和长度的直线光束来进行非晶或多晶硅膜材料的激光热处理，并且引导线性光束 在形成在基板上的薄膜材料上。

公开(公告)号：US06437284B1

公开(公告)日：2002-08-20

申请号：US09599645

申请日：2000-06-23

申请人： Tatsuki Okamoto ,  Tetsuya Ogawa ,  Keisuke Furuta ,  Hidetada Tokioka ,  Tomohiro Sasagawa ,  Junichi Nishimae ,  Mitsuo Inoue ,  Yukio Sato

发明人： Tatsuki Okamoto ,  Tetsuya Ogawa ,  Keisuke Furuta ,  Hidetada Tokioka ,  Tomohiro Sasagawa ,  Junichi Nishimae ,  Mitsuo Inoue ,  Yukio Sato

IPC分类号： B23K2606

CPC分类号： B23K26/0732 ,  B23K2101/40 ,  H01L21/02675 ,  H01L21/2026

摘要： An optical system that controls laser beam spot profile for forming a high performance thin film by a laser heat treatment process is provided. In the optical system that irradiates a rectangular laser beam on a film formed on a substrate, intensity distribution forming, apparatus makes the intensity distribution uniform in the longitudinal direction while maintaining the properties of the laser beam 2 such as directivity in the direction of shorter side, making it possible to concentrate the light to a limit permitted by the nature of the laser beam and achieve the maximum intensity gradient on the film disposed on the substrate. Thus a steep temperature distribution can be generated on the film disposed on the substrate and, as a result, high performance thin film can be formed.

摘要翻译： 提供了通过激光热处理工艺控制用于形成高性能薄膜的激光束光斑轮廓的光学系统。 在形成在基板上的膜上照射矩形激光束的光学系统中，强度分布形成装置使得强度分布沿长度方向均匀，同时保持激光束2的特性，例如沿短边方向的方向性 ，使得可以将光集中到由激光束的性质允许的极限，并且在设置在基板上的膜上实现最大强度梯度。 因此，可以在设置在基板上的膜上产生陡峭的温度分布，结果，可以形成高性能的薄膜。

公开(公告)号：US09711669B2

公开(公告)日：2017-07-18

申请号：US12997027

申请日：2009-06-03

申请人： Hidetada Tokioka ,  Hiroya Yamarin

发明人： Hidetada Tokioka ,  Hiroya Yamarin

IPC分类号： H01L31/0224 ,  H01L31/0236 ,  H01L31/0475 ,  H01L31/046 ,  H01L31/0392 ,  H01L31/0368 ,  H01L31/18

CPC分类号： H01L31/03921 ,  H01L31/02366 ,  H01L31/03685 ,  H01L31/046 ,  H01L31/1804 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A thin-film photoelectric converter in which a first electrode layer formed of a transparent conductive material, a photoelectric conversion layer for photoelectric conversion, and a second electrode layer formed of a conductive material that reflects light are stacked in that order on an insulating light-transmitting substrate. The photoelectric conversion layer and the second electrode layer are divided by dividing grooves into islands that form a plurality of photoelectric conversion cells separated from each other, adjacent ones of the plurality of photoelectric conversion cells separated by the dividing grooves being electrically connected in series. The photoelectric conversion layer includes: a first semiconductor layer including a microcrystalline structure; and a second semiconductor layer including an amorphous structure, the second semiconductor layer being disposed so as to surround all side wall portions of the first semiconductor layer that extend in in-plane directions of the insulating light-transmitting substrate.

公开(公告)号：US07570244B2

公开(公告)日：2009-08-04

申请号：US10513755

申请日：2003-06-17

申请人： Masafumi Agari ,  Hidetada Tokioka ,  Ryuichi Hashido ,  Takahiro Urakabe ,  Suehiro Gotoh ,  Masashi Okabe ,  Mitsuo Inoue

发明人： Masafumi Agari ,  Hidetada Tokioka ,  Ryuichi Hashido ,  Takahiro Urakabe ,  Suehiro Gotoh ,  Masashi Okabe ,  Mitsuo Inoue

IPC分类号： G09G3/36

CPC分类号： G09G3/3283 ,  G09G3/3241 ,  G09G2300/0417 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/027 ,  G09G2310/0297 ,  G09G2320/0242

摘要： Signal lines for supplying signal currents to respective pixel circuits having light emitting elements are arranged. A signal line driving circuit generates, on a signal line, a signal current corresponding to the image data, by switching bit weighting currents output from bit weighting current source circuits provided for respective bits of the image data, using a switch circuit turned on/off dependent on the corresponding bit. Each current source circuit has a function of correcting the level of the bit weighting current output from itself, based on a reference current of the bit weighting current supplied from a reference current line. Therefore, even when the characteristics of TFTs forming respective current source circuits vary widely, variation in signal currents among the signal lines can be suppressed, and unevenness in emission luminance can be suppressed.

摘要翻译： 布置用于向具有发光元件的各个像素电路提供信号电流的信号线。 信号线驱动电路通过使用开关电路接通/断开来切换信号线上产生与图像数据相对应的信号电流，通过切换由针对图像数据的各个比特设置的比特加权电流源电路输出的比特加权电流 取决于相应的位。 每个电流源电路具有基于从参考电流线提供的比特加权电流的参考电流来校正其自身输出的比特加权电流的电平的功能。 因此，即使形成各个电流源电路的TFT的特性变化很大，也可以抑制信号线之间的信号电流的变化，能够抑制发光亮度的不均匀。

公开(公告)号：US07369125B2

公开(公告)日：2008-05-06

申请号：US10529175

申请日：2004-05-20

申请人： Hidetada Tokioka ,  Masafumi Agari ,  Ryuichi Hashido ,  Masashi Okabe

发明人： Hidetada Tokioka ,  Masafumi Agari ,  Ryuichi Hashido ,  Masashi Okabe

IPC分类号： G09G5/00

CPC分类号： G09G3/3283 ,  G09G3/20 ,  G09G3/325 ,  G09G2310/0248 ,  G09G2310/027

摘要： A current supply circuit providing a data line with a current corresponding to a digital signal composed of data bits includes a current control circuit, a precharge switch and a precharge regulating circuit. The current control circuit responds to control signals reflecting respective data bits to control the amount of current along the data line. The precharge switch precharges the data line to a predetermined voltage prior to current supply. The precharge regulating circuit exchanges with the data line electric charge corresponding to the control signals to move the voltage on the data line closer to a steady voltage corresponding to the data bits. In this way, an analog current corresponding to digital data can be promptly produced.

摘要翻译： 向数据线提供与由数据位组成的数字信号相对应的电流的电流供给电路包括电流控制电路，预充电开关和预充电调节电路。 电流控制电路响应反映相应数据位的控制信号来控制沿数据线的电流量。 预充电开关在电流供应之前将数据线预充电到预定电压。 预充电调节电路与对应于控制信号的数据线电荷交换，以将数据线上的电压移动到与数据位相对应的稳定电压。 以这种方式，可以及时地产生对应于数字数据的模拟电流。