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公开(公告)号：US6167111A
公开(公告)日：2000-12-26
申请号：US108373
申请日：1998-07-01
CPC分类号： G03F7/70058 , G21K1/06
摘要： An apparatus for transferring a pattern of a mask onto a substrate with radiation light from a synchrotron radiation light source, includes a first mirror for collectively reflecting radiation light from the synchrotron radiation light source, and a second mirror for reflecting radiation light from the first mirror and for projecting the same to the mask. When a light ray advancing from a light emission point of the light source toward a center of a predetermined region of the mask, to be transferred to the substrate, is taken as a chief ray, when a normal to each of the first and second mirrors at an incidence position of a corresponding chief ray is taken as a Z axis, when a direction perpendicular to a plane defined by the Z axis of each mirror and a corresponding chief ray is taken as an X axis, and when a Y axis is taken along a direction perpendicular to the Z axis and X axis of each mirror, the first mirror has a reflection surface of a shape which is concave with respect to the X axis direction and concave with respect to the Y axis direction, while the second mirror has a reflection surface of a shape which is convex with respect to the Y axis direction.
摘要翻译： 一种用于利用来自同步加速器辐射光源的辐射光将掩模图案转印到基板上的装置，包括用于共同地反射来自同步加速器辐射光源的辐射光的第一反射镜和用于反射来自第一反射镜的辐射光的第二反射镜 并将其投射到面罩。 当将从光源的发光点向掩模的预定区域的中心传播的光线作为主光线时，当第一和第二反射镜中的每一个的法线 当将相应的主光线的入射位置作为Z轴时，当将与每个反射镜的Z轴和相应的主光线所定义的平面垂直的方向作为X轴，并且当采用Y轴时 沿着与每个反射镜的Z轴和X轴垂直的方向，第一反射镜具有相对于X轴方向为凹形且相对于Y轴方向凹陷的形状的反射面，而第二反射镜具有 相对于Y轴方向凸出的形状的反射面。
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公开(公告)号：US5159621A
公开(公告)日：1992-10-27
申请号：US739259
申请日：1991-08-01
申请人： Yutaka Watanabe , Shunichi Uzawa , Yasuaki Fukuda , Nobutoshi Mizusawa , Ryuichi Ebinuma , Mitsuaki Amemiya
发明人： Yutaka Watanabe , Shunichi Uzawa , Yasuaki Fukuda , Nobutoshi Mizusawa , Ryuichi Ebinuma , Mitsuaki Amemiya
CPC分类号： G21K5/04 , H01J2235/18
摘要： An X-ray transmitting window for use in X-ray lithography, for allowing transmission therethrough of X-rays from a vacuum ambience to a different ambience, includes an X-ray transmitting film, and a gasket material gas-tightly provided on at least one of opposite surfaces in a peripheral portion of the X-ray transmitting film. The gasket material has a Brinell hardness smaller than that of the X-ray transmitting film. The formed X-ray transmitting window is able to be sandwiched and fastened between a pair of flanges in a gas-tight manner.
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公开(公告)号：US5285488A
公开(公告)日：1994-02-08
申请号：US974307
申请日：1992-11-10
CPC分类号： G03F7/702
摘要： An exposure apparatus includes an exposure beam source for projecting a beam flux for exposure, having a non-uniform intensity distribution, toward a range including an exposure zone, set with respect to a main body of the exposure apparatus; illuminance detectors disposed at least at two points inside the exposure beam flux but outside the exposure zone; and a detecting device for detecting a change in intensity of the exposure beam and a change in relative position of the exposure zone and the exposure beam flux, on the basis of detected illuminances at the two points.
摘要翻译： 曝光装置包括：曝光束源，用于将曝光用光束投射到具有相对于曝光装置的主体的曝光区域的范围内，具有不均匀的强度分布; 照度检测器至少设置在曝光光束内部的两个点处，但在曝光区域外; 以及检测装置，其基于两点处的检测到的照度，检测曝光光束的强度变化和曝光区域和曝光光束通量的相对位置的变化。
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4.发明授权X-ray exposure apparatus and method, semiconductor manufacturing apparatus, and microstructure 失效X射线曝光装置和方法，半导体制造装置和微结构公开(公告)号：US06947519B2
公开(公告)日：2005-09-20
申请号：US09951456
申请日：2001-09-14
申请人： Kenji Itoga , Shunichi Uzawa , Yutaka Watanabe , Toyoki Kitayama
发明人： Kenji Itoga , Shunichi Uzawa , Yutaka Watanabe , Toyoki Kitayama
IPC分类号： G03F1/22 , G03F7/20 , G21K1/06 , G21K1/10 , G21K5/02 , G21K5/04 , H01L21/027 , H05H13/04 , G21K5/00
CPC分类号： G21K1/10 , G03F7/70008 , G03F7/70191 , G03F7/70941 , G21K1/06
摘要： An X-ray exposure apparatus extracts exposure X-rays from light called synchrotron radiation from a synchrotron radiation source by an optical path including an X-ray mirror and performs exposure using the extracted X-rays. The X-ray mirror contains a material having an absorption edge in at least one of a wavelength range of less than 0.45 nm and a wavelength range exceeding 0.7 nm, thereby implementing exposure using the X-ray in the range of 0.45 nm to 0.7 nm. The X-ray mirror contains at least one material selected from the group consisting of iron, cobalt, nickel, copper, manganese, chromium, and their alloys, nitrides, carbides, and borides.
摘要翻译： X射线曝光装置通过包括X射线反射镜的光路从同步加速器辐射源的称为同步加速器辐射的光提取曝光X射线，并使用所提取的X射线进行曝光。 X射线镜含有在波长范围小于0.45nm，波长范围超过0.7nm的吸收边缘的材料，从而使用在0.45nm〜0.7nm的范围内的X射线进行曝光 。 X射线镜包含选自铁，钴，镍，铜，锰，铬及其合金，氮化物，碳化物和硼化物中的至少一种材料。
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公开(公告)号：US06272202B1
公开(公告)日：2001-08-07
申请号：US09426945
申请日：1999-10-26
申请人： Keiko Chiba , Shunichi Uzawa , Mitsuaki Amemiya , Yutaka Watanabe
发明人： Keiko Chiba , Shunichi Uzawa , Mitsuaki Amemiya , Yutaka Watanabe
IPC分类号： G21K500
CPC分类号： G03F7/70325 , G03F1/22 , G03F1/50 , G03F7/001 , G03F7/2022 , G03F7/7035 , G03F7/70466
摘要： An exposure method for printing a pattern onto a workpiece to be exposed, includes a first exposure step for forming, on the workpiece and by exposure, a transferred image of a first absorbing material pattern formed on a mask and having no periodic structure, and a second exposure step for printing, on the workpiece and by exposure, a diffraction pattern to be produced through Fresnel diffraction due to a second absorbing material pattern formed on the mask and having a periodic structure, the diffraction pattern having a period corresponding to 1/n of a period of the transferred image of the periodic structure pattern, where n is an integer not less than 2, and wherein the first and second exposure steps are performed simultaneously.
摘要翻译： 一种用于将图案印刷到要曝光的工件上的曝光方法包括：第一曝光步骤，用于在工件上形成并且通过曝光形成在掩模上形成并且不具有周期性结构的第一吸收材料图案的转印图像，以及 第二曝光步骤，用于在工件上和通过曝光印刷由于在掩模上形成的具有周期性结构的第二吸收材料图案而通过菲涅耳衍射产生的衍射图案，衍射图案具有对应于1 / n的周期 其中n是不小于2的整数，并且其中同时执行第一和第二曝光步骤。
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公开(公告)号：US06324250B1
公开(公告)日：2001-11-27
申请号：US09425224
申请日：1999-10-22
IPC分类号： H01L2130
CPC分类号： G03F7/70425 , G03F1/22 , G03F1/50 , G03F7/2022
摘要： An exposure method for transferring a pattern of a mask onto a workpiece in a proximity exposure system, includes a first exposure step for exposing a predetermined portion of the workpiece, while maintaining a first spacing between the mask and the workpiece, and a second exposure step for exposing the predetermined portion of the workpiece, while maintaining a second spacing, different from the first spacing, between the mask and the workpiece, wherein exposures in the first and second exposure steps are performed superposedly, prior to a development process.
摘要翻译： 一种用于在接近曝光系统中将掩模图案转印到工件上的曝光方法包括：第一曝光步骤，用于在保持掩模和工件之间的第一间隔的同时保持工件的预定部分，以及第二曝光步骤 用于在所述掩模和所述工件之间保持与所述第一间隔不同的第二间隔的情况下暴露所述工件的预定部分，其中在显影处理之前，重叠地执行所述第一和第二曝光步骤中的曝光。
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公开(公告)号：US06645707B2
公开(公告)日：2003-11-11
申请号：US09534334
申请日：2000-03-24
申请人： Mitsuaki Amemiya , Shunichi Uzawa , Keiko Chiba , Yutaka Watanabe
发明人： Mitsuaki Amemiya , Shunichi Uzawa , Keiko Chiba , Yutaka Watanabe
IPC分类号： G03C556
CPC分类号： G03F7/70466 , G03F7/2022
摘要： A device manufacturing method includes a first exposure step for executing a multiple exposure of a first layer of a substrate by use of plural first masks, a development step for developing the first layer of the substrate and a second exposure step, executed after the development step, for executing a multiple exposure of a second layer of the substrate by use of plural second masks. A portion of at least one of the first masks has a pattern the same as a pattern formed in a portion of at least one of the second masks.
摘要翻译： 一种器件制造方法包括：第一曝光步骤，用于通过使用多个第一掩模来执行衬底的第一层的多次曝光;显影步骤，用于显影衬底的第一层;以及第二曝光步骤，在显影步骤之后执行 ，用于通过使用多个第二掩模来执行所述基板的第二层的多次曝光。 第一掩模中的至少一个的一部分具有与形成在至少一个第二掩模的部分中的图案相同的图案。
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公开(公告)号：US5125014A
公开(公告)日：1992-06-23
申请号：US578268
申请日：1990-09-06
IPC分类号： G21K5/02 , G03F7/20 , H01L21/027 , H01L21/30
CPC分类号： G03F7/702 , G03F7/2039
摘要： An exposure apparatus for exposing a substrate with X-rays is disclosed. The apparatus includes a radiation source for providing X-rays; and a convex mirror for reflecting the X-rays from the radiation source toward the substrate to expose a zone of the substrate with the X-rays; wherein the convex mirror and the substrate are so interrelated that a peak position of intensity distribution of the X-rays upon the zone deviates from the center of the zone.
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9.发明授权X-ray exposure apparatus, X-ray exposure method, X-ray mask, X-ray mirror, synchrotron radiation apparatus, synchrotron radiation method and semiconductor device 失效X射线曝光装置，X射线曝光方法，X射线掩模，X射线镜，同步加速器辐射装置，同步辐射法和半导体装置公开(公告)号：US06947518B2
公开(公告)日：2005-09-20
申请号：US09769490
申请日：2001-01-26
申请人： Kenji Itoga , Toyoki Kitayama , Yutaka Watanabe , Shunichi Uzawa
发明人： Kenji Itoga , Toyoki Kitayama , Yutaka Watanabe , Shunichi Uzawa
CPC分类号： G03F7/70008 , G03F7/708 , G21K1/06 , G21K1/10 , G21K5/04
摘要： An X-ray exposure apparatus comprises an X-ray mirror containing a material having an absorption edge only in at least either one of a wavelength region of less than 0.45 nm and a wavelength region exceeding 0.7 nm as to X-rays.
摘要翻译： X射线曝光装置包括仅在波长小于0.45nm的波长区域和与X射线相比超过0.7nm的波长区域中具有吸收边缘的材料的X射线镜。
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公开(公告)号：US5123036A
公开(公告)日：1992-06-16
申请号：US735691
申请日：1991-07-22
CPC分类号： G03F7/702 , G21K1/06 , G21K2201/064
摘要： An X-ray exposure apparatus for exposing a resist on a substrate to a pattern of an original includes a radiation source for providing X-rays; and an illumination system for irradiating the original and the substrate with the X-rays such that the resist of the substrate is exposed to the pattern of the original with the X-rays; wherein the illumination system has a convex mirror having a reflection surface of a shape like a cylindrical surface, for reflecting the X-rays from the radiation source to the original; and wherein the reflection surface of the mirror has such an aspherical surface shape that, with respect to a top of the reflection surface, a radiation source side and an original side are asymmetrical in shape, that, in the neighborood of the top, the radiation source side has a radius of curvature smaller than that of the original side, and that at a peripheral potion the reflection surface has a curvature of a radius larger than that at the top of the reflection surface.
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