Root mean square sensor device
    2.
    发明授权

    公开(公告)号:US11155460B2

    公开(公告)日:2021-10-26

    申请号:US16699332

    申请日:2019-11-29

    摘要: A sensor device includes a first and second Micro-Electro-Mechanical (MEM) structures. The first MEM structure includes a first heating element on a first layer of the first MEM structure. The first heating element includes an input adapted to receive an input signal. The first MEM structure also includes a first temperature sensing element on a second layer of the first MEM structure. The second MEM structure includes a second heating element on a first layer of the second MEM structure and a second temperature sensing element on a second layer of the second MEM structure. An output circuit has a first input coupled to the first temperature sensing element and a second input coupled to the second temperature sensing element.

    Apparatus and Method to Support Thermal Management of Semiconductor-Based Components

    公开(公告)号:US20170287804A1

    公开(公告)日:2017-10-05

    申请号:US15475378

    申请日:2017-03-31

    发明人: Barry Jon Male

    IPC分类号: H01L23/34 H01L23/38

    摘要: An integrated circuit having a body comprised of semiconducting material has one or more electronic components formed in a first region of the body and at least another electronic component formed in the second region of the body. A thermal barrier separates the two regions. By one approach that thermal barrier comprises a gap formed in the body. The gap may comprise an air gap or may be partially or wholly filled with material that inhibits thermal conduction. The thermal barrier may at least substantially surround the aforementioned second region. The second region may also include one or more temperature sensors disposed therein. A temperature control circuit may use the corresponding temperature information from within the second region to actively control the second region temperature using a temperature forcing element that is disposed at least proximal to the second region.

    VERTICAL THERMOELECTRIC STRUCTURES
    5.
    发明申请
    VERTICAL THERMOELECTRIC STRUCTURES 审中-公开
    垂直热电结构

    公开(公告)号:US20160351772A1

    公开(公告)日:2016-12-01

    申请号:US15162033

    申请日:2016-05-23

    摘要: A thermoelectric device is disclosed which includes metal thermal terminals protruding from a top surface of an IC, connected to vertical thermally conductive conduits made of interconnect elements of the IC. Lateral thermoelectric elements are connected to the vertical conduits at one end and heatsinked to the IC substrate at the other end. The lateral thermoelectric elements are thermally isolated by interconnect dielectric materials on the top side and field oxide on the bottom side. When operated in a generator mode, the metal thermal terminals are connected to a heat source and the IC substrate is connected to a heat sink. Thermal power flows through the vertical conduits to the lateral thermoelectric elements, which generate an electrical potential. The electrical potential may be applied to a component or circuit in the IC. The thermoelectric device may be integrated into an IC without adding fabrication cost or complexity.

    摘要翻译: 公开了一种热电装置,其包括从IC的顶表面突出的金属热端子,其连接到由IC的互连元件制成的垂直导热导管。 侧向热电元件在一端连接到垂直导管,并在另一端与IC基板相互散热。 侧向热电元件通过顶侧的互连电介质材料和底侧的场氧化物热隔离。 当在发电机模式下工作时,金属热端子连接到热源,并且IC基板连接到散热器。 热功率流过垂直管道到横向热电元件,产生电位。 电位可以施加到IC中的元件或电路。 热电装置可以集成到IC中而不增加制造成本或复杂性。

    Apparatus and method to support thermal management of semiconductor-based components

    公开(公告)号:US11211305B2

    公开(公告)日:2021-12-28

    申请号:US15475378

    申请日:2017-03-31

    发明人: Barry Jon Male

    IPC分类号: H01L23/34 H01L23/38

    摘要: An integrated circuit having a body comprised of semiconducting material has one or more electronic components formed in a first region of the body and at least another electronic component formed in the second region of the body. A thermal barrier separates the two regions. By one approach that thermal barrier comprises a gap formed in the body. The gap may comprise an air gap or may be partially or wholly filled with material that inhibits thermal conduction. The thermal barrier may at least substantially surround the aforementioned second region. The second region may also include one or more temperature sensors disposed therein. A temperature control circuit may use the corresponding temperature information from within the second region to actively control the second region temperature using a temperature forcing element that is disposed at least proximal to the second region.

    Galvanic isolation device
    10.
    发明授权

    公开(公告)号:US10121847B2

    公开(公告)日:2018-11-06

    申请号:US15462741

    申请日:2017-03-17

    摘要: A galvanic isolation device includes a first integrated circuit (IC) die that has communication circuitry formed in a circuit layer below the top surface. A first conductive plate is formed on the IC die proximate the top surface, and is coupled to the communication circuitry. A dielectric isolation layer is formed over a portion of the top surface of the IC after the IC is fabricated such that the dielectric isolation layer completely covers the conductive plate. A second conductive plate is juxtaposed with the first conductive plate but separated by the dielectric isolation layer such that the first conductive plate and the second conductive plate form a capacitor. The second conductive plate is configured to be coupled to a second communication circuit.