Abstract:
A hysteretic controller coupled to a first inductor and a second inductor, the first inductor is coupled to a secondary side of a transformer, the second inductor is coupled to the secondary side of the transformer and the hysteretic controller includes: a hysteretic comparator including a first input, a second input, and an output, the first input configured to receive a sensed current from the first inductor and the second inductor, the second input configured to receive a differential voltage representing a potential difference between an output voltage of a power converter and a reference voltage; a pulse sequencer coupled to the output of the hysteretic comparator; and a dead-time generation circuit configured to provide a first on-time signal to a first switch coupled to a primary side of the transformer and a second on-time signal to a second switch coupled to the secondary side of the transformer, the first and second on-time signals based on a pulse signal received from the pulse sequencer.
Abstract:
A hysteretic controller coupled to a first inductor and a second inductor, the first inductor is coupled to a secondary side of a transformer, the second inductor is coupled to the secondary side of the transformer and the hysteretic controller includes: a hysteretic comparator including a first input, a second input, and an output, the first input configured to receive a sensed current from the first inductor and the second inductor, the second input configured to receive a differential voltage representing a potential difference between an output voltage of a power converter and a reference voltage; a pulse sequencer coupled to the output of the hysteretic comparator; and a dead-time generation circuit configured to provide a first on-time signal to a first switch coupled to a primary side of the transformer and a second on-time signal to a second switch coupled to the secondary side of the transformer, the first and second on-time signals based on a pulse signal received from the pulse sequencer.
Abstract:
Hysteretic control for power converters. In an example arrangement, an apparatus includes a converter for converting an input voltage to an output voltage including a transformer; at least one primary side driver switch coupled to supply current from an input voltage terminal to the primary side of the transformer; at least one inductor coupled between the secondary side of the transformer and the output voltage terminal; at least one secondary side switch coupled between the inductor and a ground potential; and a hysteretic controller coupled to supply a first on-time signal to the at least one primary side switch and a second on-time signal to the at least one secondary side switch, the hysteretic controller configured for sensing the output voltage and having at least one current input coupled for sensing current flowing in the inductor and generating primary side driver switch on-time pulses to control the output voltage.
Abstract:
A high-voltage transistor (HVT) structure adapts a low-voltage transistor (LUT) to high-voltage environments. The HVT structure includes a drain node, a source node, a control gate, and a field electrode. The drain node and the source node define a conductive channel, in which mobilized charges are regulated by the control gate. While being isolated from the control gate, the field electrode is configured to spread the mobilized charges in response to a field voltage. The field electrode is structured and routed to prevent charge sharing with any one of the drain node, source node, or control gate. Advantageously, the isolated field electrode minimizes the capacitance of the control gate as well as the drain and source nodes, such that the HVT can switch with less power loss and a more robust performance in a high-voltage environment.
Abstract:
A high-voltage transistor (HVT) structure adapts a low-voltage transistor (LUT) to high-voltage environments. The HVT structure includes a drain node, a source node, a control gate, and a field electrode. The drain node and the source node define a conductive channel, in which mobilized charges are regulated by the control gate. While being isolated from the control gate, the field electrode is configured to spread the mobilized charges in response to a field voltage. The field electrode is structured and routed to prevent charge sharing with any one of the drain node, source node, or control gate. Advantageously, the isolated field electrode minimizes the capacitance of the control gate as well as the drain and source nodes, such that the HVT can switch with less power loss and a more robust performance in a high-voltage environment.
Abstract:
A circuit for sensing current in a capacitive network. A first capacitor carries a first current. A second capacitor is connected to the first capacitor thereby forming a current divider. The second capacitor carries a second current which is proportional to the first current. A transimpedance amplifier is connected to the second capacitor and has a voltage output that is proportional to the second current. Using a current feedback amplifier as the transimpedance amplifier significantly improves bandwidth and stability.
Abstract:
A high-voltage transistor (HVT) structure adapts a low-voltage transistor (LVT) to high-voltage environments. The HVT structure includes a drain node, a source node, a control gate, and a field electrode. The drain node and the source node define a conductive channel, in which mobilized charges are regulated by the control gate. While being isolated from the control gate, the field electrode is configured to spread the mobilized charges in response to a field voltage. The field electrode is structured and routed to prevent charge sharing with any one of the drain node, source node, or control gate. Advantageously, the isolated field electrode minimizes the capacitance of the control gate as well as the drain and source nodes, such that the HVT can switch with less power loss and a more robust performance in a high-voltage environment.
Abstract:
A circuit for sensing current in a capacitive network. A first capacitor carries a first current. A second capacitor is connected to the first capacitor thereby forming a current divider. The second capacitor carries a second current which is proportional to the first current. A transimpedance amplifier is connected to the second capacitor and has a voltage output that is proportional to the second current. Using a current feedback amplifier as the transimpedance amplifier significantly improves bandwidth and stability.
Abstract:
Hysteretic control for power converters. In an example arrangement, an apparatus includes a converter for converting an input voltage to an output voltage including a transformer; at least one primary side driver switch coupled to supply current from an input voltage terminal to the primary side of the transformer; at least one inductor coupled between the secondary side of the transformer and the output voltage terminal; at least one secondary side switch coupled between the inductor and a ground potential; and a hysteretic controller coupled to supply a first on-time signal to the at least one primary side switch and a second on-time signal to the at least one secondary side switch, the hysteretic controller configured for sensing the output voltage and having at least one current input coupled for sensing current flowing in the inductor and generating primary side driver switch on-time pulses to control the output voltage.
Abstract:
A high-voltage transistor (HVT) structure adapts a low-voltage transistor (LVT) to high-voltage environments. The HVT structure includes a drain node, a source node, a control gate, and a field electrode. The drain node and the source node define a conductive channel, in which mobilized charges are regulated by the control gate. While being isolated from the control gate, the field electrode is configured to spread the mobilized charges in response to a field voltage. The field electrode is structured and routed to prevent charge sharing with any one of the drain node, source node, or control gate. Advantageously, the isolated field electrode minimizes the capacitance of the control gate as well as the drain and source nodes, such that the HVT can switch with less power loss and a more robust performance in a high-voltage environment.