摘要:
An example integrated circuit die includes: a plurality of lower level conductor layers, a plurality of lower level insulator layers between the plurality of lower level conductor layers, a plurality of lower level vias extending vertically through the lower level insulator layers, a plurality of upper level conductor layers overlying the lower level conductor layers, a plurality of upper level insulator layers between and surrounding the upper level conductor layers, a plurality of upper level vias; at least two scribe seals arranged to form a vertical barrier extending vertically from the semiconductor substrate to a passivation layer at an upper surface of the integrated circuit die; and at least one opening extending vertically through one of the at least two scribe seals and extending through: the upper level conductor layers, the upper level via layers, the lower level conductor layers, and the lower level via layers.
摘要:
A snapout calculator, and wherein the snapout calculator determines where the reference levels for the various comparators shall be placed after each asynchronous sample is generated.
摘要:
An apparatus, comprising: an analog to digital converter including: a clipping detector; and a post-processor, wherein the post processor generates synchronous values of clipped data based on non-clipped values of non-clipped data.
摘要:
In described examples, a first die includes a primary LC tank oscillator having a natural frequency of oscillation to induce a forced oscillation in a secondary LC tank oscillator of a separate second die via a magnetic coupling between the primary LC tank oscillator and the secondary LC tank oscillator.
摘要:
An example integrated circuit die includes: a plurality of lower level conductor layers, a plurality of lower level insulator layers between the plurality of lower level conductor layers, a plurality of lower level vias extending vertically through the lower level insulator layers, a plurality of upper level conductor layers overlying the lower level conductor layers, a plurality of upper level insulator layers between and surrounding the upper level conductor layers, a plurality of upper level vias; at least two scribe seals arranged to form a vertical barrier extending vertically from the semiconductor substrate to a passivation layer at an upper surface of the integrated circuit die; and at least one opening extending vertically through one of the at least two scribe seals and extending through: the upper level conductor layers, the upper level via layers, the lower level conductor layers, and the lower level via layers.
摘要:
A method, comprising: receiving an analog input; determining an upper outer rail and a lower outer rail as polling values to be used by voltage comparators; blanking at least three comparators; determining which two of the at least three comparators are closest to the input analog voltage levels; defining the two comparators which are closest to the analog input signal to be the next comparators of the next sampling process; assigning a remaining comparator at a voltage level in between the new top and bottom voltage levels; enabling the outer rails, but blanking the inner rail; progressively narrowing down the voltage range spanned by the two outer comparators; and generating a 2-tuple value of an asynchronous voltage comparator crossing.
摘要:
A method, comprising: receiving a plurality of 2-tuples of asynchronously sampled inputs at an asynchronous to synchronous reconstructor; performing a coarse asynchronous to synchronous conversion using the plurality of 2-tuples to generate a plurality of low precision synchronous outputs; generating a high precision synchronous output, z0, using a plurality of asynchronous 2-tuples, low precision synchronous outputs after it, and its own high precision outputs from previous steps; calculating c0 and c−1 by summing future low precision outputs and the past high precision outputs after they are weighted with the appropriate windowed sinc. values and then subtracted from appropriate asynchronous samples; calculating, the four quantities “s−11”, “s01”, “s00” and “s−10” based on particular values of the windowed sinc. function; and using c0, c−1, s−11, s01, s00 and s−10, the high precision synchronous output of interest, z0 is generated.
摘要:
A method, comprising: receiving an analog input; determining an upper outer rail and a lower outer rail as polling values to be used by voltage comparators; blanking at least three comparators; determining which two of the at least three comparators are closest to the input analog voltage levels; defining the two comparators which are closest to the analog input signal to be the next comparators of the next sampling process; assigning a remaining comparator at a voltage level in between the new top and bottom voltage levels; enabling the outer rails, but blanking the inner rail; progressively narrowing down the voltage range spanned by the two outer comparators; and generating a 2-tuple value of an asynchronous voltage comparator crossing.
摘要:
In apparatus for die-to-die communication, a first die includes at least a first circuit, and a second die includes at least a second circuit. The first die is separated by a fixed distance from the second die. In response to a signal, the first circuit is configured to induce a current in the second circuit via a magnetic coupling between the first circuit and the second circuit.
摘要:
An example integrated circuit die includes: lower level conductor layers, lower level insulator layers between the lower level conductor layers, lower level vias extending vertically through the lower level insulator layers, upper level conductor layers overlying the lower level conductor layers, upper level insulator layers between and surrounding the upper level conductor layers, upper level vias; at least two scribe seals arranged to form a vertical barrier extending vertically from the semiconductor substrate to a passivation layer at an upper surface of the integrated circuit die; and at least one opening extending vertically through one of the at least two scribe seals and extending through: the upper level conductor layers, the upper level via layers, the lower level conductor layers, and the lower level via layers.