公开(公告)号：US20230180609A1

公开(公告)日：2023-06-08

申请号：US18061020

申请日：2022-12-02

Applicant: The Government of the United States of America, as represented by the Secretary of the Navy

Inventor： Boris N. Feigelson ,  Kevin P. Anderson ,  Benjamin L. Greenberg ,  James A. Wollmershauser ,  Alan G. Jacobs

IPC: H10N10/01 ,  C04B35/117 ,  C04B35/488 ,  C04B35/626 ,  C04B35/64 ,  C04B35/628 ,  H10N10/852

CPC classification number: H10N10/01 ,  C04B35/117 ,  C04B35/488 ,  C04B35/6261 ,  C04B35/64 ,  C04B35/62884 ,  C04B35/62813 ,  C04B35/62823 ,  H10N10/852 ,  C04B2235/428 ,  C04B2235/3217 ,  C04B2235/3244 ,  C04B2235/5454 ,  C04B2235/614 ,  C04B2235/781 ,  C04B2235/785

Abstract: Thermoelectric (TE) nanocomposite material that includes at least one component consisting of nanocrystals. A TE nanocomposite material in accordance with the present invention can include, but is not limited to, multiple nanocrystalline structures, nanocrystal networks or partial networks, or multi-component materials, with some components forming connected interpenetrating networks including nanocrystalline networks. The TE nanocomposite material can be in the form of a bulk solid having semiconductor nanocrystallites that form an electrically conductive network within the material. In other embodiments, the TE nanocomposite material can be a nanocomposite thermoelectric material having one network of p-type or n-type semiconductor domains and a low thermal conductivity semiconductor or dielectric network or domains separating the p-type or n-type domains that provides efficient phonon scattering to reduce thermal conductivity while maintaining the electrical properties of the p-type or n-type semiconductor.

公开(公告)号：US11532478B2

公开(公告)日：2022-12-20

申请号：US17520830

申请日：2021-11-08

Applicant: The Government of the United States of America, as represented by the Secretary of the Navy

Inventor： Travis J. Anderson ,  James C. Gallagher ,  Marko J. Tadjer ,  Alan G. Jacobs ,  Boris N. Feigelson

IPC: H01L21/265 ,  H01L29/20 ,  H01L29/207 ,  H01L21/285 ,  H01L29/45 ,  H01L21/266 ,  H01L21/324 ,  H01L29/36

Abstract: A method for activating implanted dopants and repairing damage to dopant-implanted GaN to form n-type or p-type GaN. A GaN substrate is implanted with n- or p-type ions and is subjected to a high-temperature anneal to activate the implanted dopants and to produce planar n- or p-type doped areas within the GaN having an activated dopant concentration of about 1018-1022 cm−3. An initial annealing at a temperature at which the GaN is stable at a predetermined process temperature for a predetermined time can be conducted before the high-temperature anneal. A thermally stable cap can be applied to the GaN substrate to suppress nitrogen evolution from the GaN surface during the high-temperature annealing step. The high-temperature annealing can be conducted under N2 pressure to increase the stability of the GaN. The annealing can be conducted using laser annealing or rapid thermal annealing (RTA).

公开(公告)号：US20210028020A1

公开(公告)日：2021-01-28

申请号：US16927061

申请日：2020-07-13

Applicant: The Government of the United States of America, as represented by the Secretary of the Navy

Inventor： Travis J. Anderson ,  James C. Gallagher ,  Marko J. Tadjer ,  Alan G. Jacobs ,  Boris N. Feigelson

IPC: H01L21/265 ,  H01L29/20 ,  H01L29/207 ,  H01L29/36 ,  H01L29/45 ,  H01L21/266 ,  H01L21/324 ,  H01L21/285

Abstract: A method for activating implanted dopants and repairing damage to dopant-implanted GaN to form n-type or p-type GaN. A GaN substrate is implanted with n- or p-type ions and is subjected to a high-temperature anneal to activate the implanted dopants and to produce planar n- or p-type doped areas within the GaN having an activated dopant concentration of about 1018-1022 cm−3. An initial annealing at a temperature at which the GaN is stable at a predetermined process temperature for a predetermined time can be conducted before the high-temperature anneal. A thermally stable cap can be applied to the GaN substrate to suppress nitrogen evolution from the GaN surface during the high-temperature annealing step. The high-temperature annealing can be conducted under N2 pressure to increase the stability of the GaN. The annealing can be conducted using laser annealing or rapid thermal annealing (RTA).

公开(公告)号：US12114569B2

公开(公告)日：2024-10-08

申请号：US18061012

申请日：2022-12-02

Applicant: The Government of the United States of America, as represented by the Secretary of the Navy

Inventor： Boris N. Feigelson ,  Kevin P. Anderson ,  Benjamin L Greenberg ,  James A. Wollmershauser ,  Alan G. Jacobs

IPC: H10N10/01 ,  C04B35/117 ,  C04B35/488 ,  C04B35/626 ,  C04B35/628 ,  C04B35/64 ,  C09C1/28 ,  C09C3/00 ,  C09C3/04 ,  C09C3/06 ,  H10N10/852 ,  H10N10/857

CPC classification number: H10N10/01 ,  C04B35/117 ,  C04B35/488 ,  C04B35/6261 ,  C04B35/62813 ,  C04B35/62823 ,  C04B35/62884 ,  C04B35/64 ,  C09C1/28 ,  C09C3/006 ,  C09C3/041 ,  C09C3/043 ,  C09C3/063 ,  H10N10/852 ,  H10N10/857 ,  C01P2002/60 ,  C01P2002/88 ,  C01P2004/64 ,  C01P2006/32 ,  C01P2006/40 ,  C04B2235/3217 ,  C04B2235/3244 ,  C04B2235/428 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/614 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/9607

Abstract: Thermoelectric (TE) nanocomposite material that includes at least one component consisting of nanocrystals. A TE nanocomposite material in accordance with the present invention can include, but is not limited to, multiple nanocrystalline structures, nanocrystal networks or partial networks, or multi-component materials, with some components forming connected interpenetrating networks including nanocrystalline networks. The TE nanocomposite material can be in the form of a bulk solid having semiconductor nanocrystallites that form an electrically conductive network within the material. In other embodiments, the TE nanocomposite material can be a nanocomposite thermoelectric material having one network of p-type or n-type semiconductor domains and a low thermal conductivity semiconductor or dielectric network or domains separating the p-type or n-type domains that provides efficient phonon scattering to reduce thermal conductivity while maintaining the electrical properties of the p-type or n-type semiconductor.

公开(公告)号：US20230420539A1

公开(公告)日：2023-12-28

申请号：US18340134

申请日：2023-06-23

Applicant: The Government of the United States of America, as represented by the Secretary of the Navy

Inventor： Joseph A. Spencer ,  Marko J. Tadjer ,  Alan G. Jacobs ,  Karl D. Hobart ,  Yuhao Zhang

IPC: H01L29/66 ,  H01L29/872

CPC classification number: H01L29/66143 ,  H01L29/8725

Abstract: A self-aligned lithography process for the fabrication of an electronic device having predefined areas of a second semiconductor material having a second conductivity type deposited into trenches formed in a first semiconductor material layer having a first conductivity type. A single lithography mask is used for etching trenches in the first semiconductor material, enabling cleaning of the trenches, and providing defined areas for the deposition of the second semiconductor material into the first semiconductor material. The presence of the areas of the second semiconductor material within the first semiconductor material creates a heterojunction beneath a metal for the formation of a first type of contact to the first semiconductor material and a second type of contact to the second type of material. By using a single mask for the etching, cleaning, and filling steps, misalignment issues plaguing devices having small (1-2 μm) feature sizes is eliminated.

公开(公告)号：US11817318B2

公开(公告)日：2023-11-14

申请号：US18116000

申请日：2023-03-01

Applicant: The Government of the United States of America, as represented by the Secretary of the Navy

Inventor： Travis J. Anderson ,  James C. Gallagher ,  Marko J. Tadjer ,  Alan G. Jacobs ,  Boris N. Feigelson

IPC: H01L21/265 ,  H01L29/20 ,  H01L29/207 ,  H01L21/285 ,  H01L29/45 ,  H01L21/266 ,  H01L21/324 ,  H01L29/36

CPC classification number: H01L21/26546 ,  H01L21/266 ,  H01L21/28575 ,  H01L21/3245 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36 ,  H01L29/452

Abstract: A method for activating implanted dopants and repairing damage to dopant-implanted GaN to form n-type or p-type GaN. A GaN substrate is implanted with n- or p-type ions and is subjected to a high-temperature anneal to activate the implanted dopants and to produce planar n- or p-type doped areas within the GaN having an activated dopant concentration of about 1018-1022 cm−3. An initial annealing at a temperature at which the GaN is stable at a predetermined process temperature for a predetermined time can be conducted before the high-temperature anneal. A thermally stable cap can be applied to the GaN substrate to suppress nitrogen evolution from the GaN surface during the high-temperature annealing step. The high-temperature annealing can be conducted under N2 pressure to increase the stability of the GaN. The annealing can be conducted using laser annealing or rapid thermal annealing (RTA).

公开(公告)号：US20210400777A1

公开(公告)日：2021-12-23

申请号：US17347646

申请日：2021-06-15

Applicant: The Government of the United States of America, as represented by the Secretary of the Navy

Inventor： Alan G. Jacobs ,  Boris N. Feigelson

IPC: H05B6/10 ,  B33Y80/00 ,  B33Y70/00

Abstract: RF susceptors manufactured by means of 3D printing. 3D-printed susceptors in accordance with the invention include susceptors having solid or mesh walls, where the susceptors are in the form of hollow cylinders, pyramids, spheres, hemispheres, ellipsoids, paraboloids, toroids, or prisms; flat planes; or other hollow or solid three-dimensional shapes. The 3D-printed susceptors can be formed from any suitable starting material, such as tungsten powder, graphite, silicon carbide, molybdenum powder, tantalum powder, rhenium powder, or alloys thereof, or can be formed such that some portions of the susceptors are formed from one or more materials while other portions are formed from different material(s).

公开(公告)号：US20240234139A9

公开(公告)日：2024-07-11

申请号：US18490878

申请日：2023-10-20

Applicant: The Government of the United States of America, as represented by the Secretary of the Navy

Inventor： Marko J. Tadjer ,  Joseph A. Spencer ,  Alan G. Jacobs ,  Hannah N. Masten ,  James Spencer Lundh ,  Karl D. Hobart ,  Travis J. Anderson ,  Tatyana I. Feygelson ,  Bradford B. Pate ,  Boris N. Feigelson

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/778 ,  H01L29/78 ,  H01L29/80

CPC classification number: H01L21/02565 ,  H01L21/02304 ,  H01L21/02527 ,  H01L21/0262 ,  H01L29/24 ,  H01L29/7787 ,  H01L29/785 ,  H01L29/802

Abstract: A method for growing nanocrystalline diamond (NCD) on Ga2O3 to provide thermal management in Ga2O3-based devices. A protective SiNx interlayer is deposited on the Ga2O3 before growth of the NCD layer to protect the Ga2O3 from damage caused during growth of the NCD layer. The presence of the NCD provides thermal management and enables improved performance of the Ga2O3-based device.

公开(公告)号：US20230207323A1

公开(公告)日：2023-06-29

申请号：US18116000

申请日：2023-03-01

Applicant: The Government of the United States of America, as represented by the Secretary of the Navy

Inventor： Travis J. Anderson ,  James C. Gallagher ,  Marko J. Tadjer ,  Alan G. Jacobs ,  Boris N. Feigelson

IPC: H01L21/265 ,  H01L29/20 ,  H01L29/207 ,  H01L21/285 ,  H01L29/45 ,  H01L21/266 ,  H01L21/324 ,  H01L29/36

CPC classification number: H01L21/26546 ,  H01L29/2003 ,  H01L29/207 ,  H01L21/28575 ,  H01L29/452 ,  H01L21/266 ,  H01L21/3245 ,  H01L29/36

Abstract: A method for activating implanted dopants and repairing damage to dopant-implanted GaN to form n-type or p-type GaN. A GaN substrate is implanted with n- or p-type ions and is subjected to a high-temperature anneal to activate the implanted dopants and to produce planar n- or p-type doped areas within the GaN having an activated dopant concentration of about 1018-1022 cm−3. An initial annealing at a temperature at which the GaN is stable at a predetermined process temperature for a predetermined time can be conducted before the high-temperature anneal. A thermally stable cap can be applied to the GaN substrate to suppress nitrogen evolution from the GaN surface during the high-temperature annealing step. The high-temperature annealing can be conducted under N2 pressure to increase the stability of the GaN. The annealing can be conducted using laser annealing or rapid thermal annealing (RTA).

公开(公告)号：US20230030549A1

公开(公告)日：2023-02-02

申请号：US17876163

申请日：2022-07-28

Applicant: The Government of the United States of America, as represented by the Secretary of the Navy

Inventor： Travis J. Anderson ,  Mona A. Ebrish ,  Andrew D. Koehler ,  Alan G. Jacobs ,  Matthew A. Porter ,  Karl D. Hobart ,  Prakash Pandey ,  Tolen Michael Nelson ,  Daniel G. Georgiev ,  Raghav Khanna ,  Michael Robert Hontz

IPC: H01L29/06 ,  H01L29/20 ,  H01L29/861

Abstract: A hybrid edge termination structure and method of forming the same. The hybrid edge termination structure in accordance with the invention is based on a junction termination extension (JTE) architecture, but includes an additional Layer of guard ring (GR) structures to further implement the implantation of dopants into the structure. The hybrid edge termination structure of the invention has a three-Layer structure, with a top Layer and a bottom Layer each having a constant dopant concentration in the lateral direction, and a middle Layer consisting of a plurality of spatially defined alternating regions that exhibit the electrical properties of either the top or bottom layer. By including the second layer, a discretized varying charge profile can be obtained that approximates the varying charge profile obtained using tapered edge termination but with easier manufacturing and lower cost.