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公开(公告)号:US11532478B2
公开(公告)日:2022-12-20
申请号:US17520830
申请日:2021-11-08
发明人: Travis J. Anderson , James C. Gallagher , Marko J. Tadjer , Alan G. Jacobs , Boris N. Feigelson
IPC分类号: H01L21/265 , H01L29/20 , H01L29/207 , H01L21/285 , H01L29/45 , H01L21/266 , H01L21/324 , H01L29/36
摘要: A method for activating implanted dopants and repairing damage to dopant-implanted GaN to form n-type or p-type GaN. A GaN substrate is implanted with n- or p-type ions and is subjected to a high-temperature anneal to activate the implanted dopants and to produce planar n- or p-type doped areas within the GaN having an activated dopant concentration of about 1018-1022 cm−3. An initial annealing at a temperature at which the GaN is stable at a predetermined process temperature for a predetermined time can be conducted before the high-temperature anneal. A thermally stable cap can be applied to the GaN substrate to suppress nitrogen evolution from the GaN surface during the high-temperature annealing step. The high-temperature annealing can be conducted under N2 pressure to increase the stability of the GaN. The annealing can be conducted using laser annealing or rapid thermal annealing (RTA).
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公开(公告)号:US20210028020A1
公开(公告)日:2021-01-28
申请号:US16927061
申请日:2020-07-13
发明人: Travis J. Anderson , James C. Gallagher , Marko J. Tadjer , Alan G. Jacobs , Boris N. Feigelson
IPC分类号: H01L21/265 , H01L29/20 , H01L29/207 , H01L29/36 , H01L29/45 , H01L21/266 , H01L21/324 , H01L21/285
摘要: A method for activating implanted dopants and repairing damage to dopant-implanted GaN to form n-type or p-type GaN. A GaN substrate is implanted with n- or p-type ions and is subjected to a high-temperature anneal to activate the implanted dopants and to produce planar n- or p-type doped areas within the GaN having an activated dopant concentration of about 1018-1022 cm−3. An initial annealing at a temperature at which the GaN is stable at a predetermined process temperature for a predetermined time can be conducted before the high-temperature anneal. A thermally stable cap can be applied to the GaN substrate to suppress nitrogen evolution from the GaN surface during the high-temperature annealing step. The high-temperature annealing can be conducted under N2 pressure to increase the stability of the GaN. The annealing can be conducted using laser annealing or rapid thermal annealing (RTA).
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公开(公告)号:US20190252501A1
公开(公告)日:2019-08-15
申请号:US16391342
申请日:2019-04-23
发明人: Karl D. Hobart , Andrew D. Koehler , Francis J. Kub , Travis J. Anderson , Tatyana I. Feygelson , Marko J. Tadjer , Lunet E. Luna
IPC分类号: H01L29/16 , H01L29/45 , H01L29/66 , H01L29/778 , H01L29/423
CPC分类号: H01L29/1602 , H01L21/4803 , H01L23/3732 , H01L29/0649 , H01L29/2003 , H01L29/205 , H01L29/4232 , H01L29/42356 , H01L29/45 , H01L29/452 , H01L29/475 , H01L29/66462 , H01L29/7786 , H01L29/7787
摘要: A device structure and method for improving thermal management in highly scaled, high power electronic and optoelectronic devices such as GaN FET and AlGaN/GaN HEMT devices by implementing diamond air bridges into such devices to remove waste heat. The diamond air bridge can be formed from a polycrystalline diamond material layer which can be grown on the surface of a dielectric material layer, on the surface of a III-nitride material, or on the surface of a diamond polycrystalline nucleation layer, and may be optimized to have a high thermal conductivity at the growth interface with the underlying material.
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公开(公告)号:US20170092724A1
公开(公告)日:2017-03-30
申请号:US15272736
申请日:2016-09-22
IPC分类号: H01L29/16 , H01L21/02 , H01L21/324
CPC分类号: H01L29/1608 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/02658 , H01L21/324
摘要: A method and device including adding a protective layer on the surface of a substrate, annealing the substrate at a temperature approximately greater or equal to 1850° C., removing the protective layer from the surface of the substrate after the annealing, and growing a first epilayer on the substrate after the removing of the protective layer, wherein the first epilayer is grown without attempting to prevent the basal plane dislocations to propagate in the first epilayer when growing the first epilayer, and wherein the first epilayer is free of the basal plane dislocations.
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公开(公告)号:US11634834B2
公开(公告)日:2023-04-25
申请号:US17409916
申请日:2021-08-24
发明人: Karl D. Hobart , Tatyana I. Feygelson , Marko J. Tadjer , Travis J. Anderson , Andrew D. Koehler , Samuel Graham, Jr. , Mark Goorsky , Zhe Cheng , Luke Yates , Tingyu Bai , Yekan Wang
摘要: A method for growing polycrystalline diamond films having engineered grain growth and microstructure. Grain growth of a polycrystalline diamond film on a substrate is manipulated by growing the diamond on a nanopatterned substrate having features on the order of the initial grain size of the diamond film. By growing the diamond on such nanopatterned substrates, the crystal texture of a polycrystalline diamond film can be engineered to favor the preferred orientation texture, which in turn enhances the thermal conductivity of the diamond film.
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公开(公告)号:US20220254639A1
公开(公告)日:2022-08-11
申请号:US17584477
申请日:2022-01-26
发明人: Travis J. Anderson , James C. Gallagher , Marko J. Tadjer , Alan G. Jacobs , Boris N. Feigelson
IPC分类号: H01L21/265 , H01L29/20 , H01L29/207 , H01L21/285 , H01L29/45 , H01L21/266 , H01L21/324 , H01L29/36
摘要: A method for activating implanted dopants and repairing damage to dopant-implanted GaN to form n-type or p-type GaN. A GaN substrate is implanted with n- or p-type ions and is subjected to a high-temperature anneal to activate the implanted dopants and to produce planar n- or p-type doped areas within the GaN having an activated dopant concentration of about 1018-1022 cm−3. An initial annealing at a temperature at which the GaN is stable at a predetermined process temperature for a predetermined time can be conducted before the high-temperature anneal. A thermally stable cap can be applied to the GaN substrate to suppress nitrogen evolution from the GaN surface during the high-temperature annealing step. The high-temperature annealing can be conducted under N2 pressure to increase the stability of the GaN. The annealing can be conducted using laser annealing or rapid thermal annealing (RTA).
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公开(公告)号:US20210381127A1
公开(公告)日:2021-12-09
申请号:US17409916
申请日:2021-08-24
发明人: Karl D. Hobart , Tatyana I. Feygelson , Marko J. Tadjer , Travis J. Anderson , Andrew D. Koehler , Samuel Graham, JR. , Mark Goorsky , Zhe Cheng , Luke Yates , Tingyu Bai , Yekan Wang
摘要: A method for growing polycrystalline diamond films having engineered grain growth and microstructure. Grain growth of a polycrystalline diamond film on a substrate is manipulated by growing the diamond on a nanopatterned substrate having features on the order of the initial grain size of the diamond film. By growing the diamond on such nanopatterned substrates, the crystal texture of a polycrystalline diamond film can be engineered to favor the preferred orientation texture, which in turn enhances the thermal conductivity of the diamond film.
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公开(公告)号:US10424643B2
公开(公告)日:2019-09-24
申请号:US16391342
申请日:2019-04-23
发明人: Karl D. Hobart , Andrew D. Koehler , Francis J. Kub , Travis J. Anderson , Tatyana I. Feygelson , Marko J. Tadjer , Lunet E. Luna
IPC分类号: H01L29/16 , H01L29/45 , H01L29/423 , H01L29/778 , H01L29/66
摘要: A device structure and method for improving thermal management in highly scaled, high power electronic and optoelectronic devices such as GaN FET and AlGaN/GaN HEMT devices by implementing diamond air bridges into such devices to remove waste heat. The diamond air bridge can be formed from a polycrystalline diamond material layer which can be grown on the surface of a dielectric material layer, on the surface of a III-nitride material, or on the surface of a diamond polycrystalline nucleation layer, and may be optimized to have a high thermal conductivity at the growth interface with the underlying material.
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公开(公告)号:US20220059353A1
公开(公告)日:2022-02-24
申请号:US17520830
申请日:2021-11-08
发明人: Travis J. Anderson , James C. Gallagher , Marko J. Tadjer , Alan G. Jacobs , Boris N. Feigelson
IPC分类号: H01L21/265 , H01L29/20 , H01L29/207 , H01L21/285 , H01L29/45 , H01L21/266 , H01L21/324 , H01L29/36
摘要: A method for activating implanted dopants and repairing damage to dopant-implanted GaN to form n-type or p-type GaN. A GaN substrate is implanted with n- or p-type ions and is subjected to a high-temperature anneal to activate the implanted dopants and to produce planar n- or p-type doped areas within the GaN having an activated dopant concentration of about 1018-1022 cm−3. An initial annealing at a temperature at which the GaN is stable at a predetermined process temperature for a predetermined time can be conducted before the high-temperature anneal. A thermally stable cap can be applied to the GaN substrate to suppress nitrogen evolution from the GaN surface during the high-temperature annealing step. The high-temperature annealing can be conducted under N2 pressure to increase the stability of the GaN. The annealing can be conducted using laser annealing or rapid thermal annealing (RTA).
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10.
公开(公告)号:US11201058B2
公开(公告)日:2021-12-14
申请号:US16927061
申请日:2020-07-13
发明人: Travis J. Anderson , James C. Gallagher , Marko J. Tadjer , Alan G. Jacobs , Boris N. Feigelson
IPC分类号: H01L21/265 , H01L29/20 , H01L29/207 , H01L21/285 , H01L29/45 , H01L21/266 , H01L21/324 , H01L29/36
摘要: A method for activating implanted dopants and repairing damage to dopant-implanted GaN to form n-type or p-type GaN. A GaN substrate is implanted with n- or p-type ions and is subjected to a high-temperature anneal to activate the implanted dopants and to produce planar n- or p-type doped areas within the GaN having an activated dopant concentration of about 1018-1022 cm−3. An initial annealing at a temperature at which the GaN is stable at a predetermined process temperature for a predetermined time can be conducted before the high-temperature anneal. A thermally stable cap can be applied to the GaN substrate to suppress nitrogen evolution from the GaN surface during the high-temperature annealing step. The high-temperature annealing can be conducted under N2 pressure to increase the stability of the GaN. The annealing can be conducted using laser annealing or rapid thermal annealing (RTA).
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