公开(公告)号：US09045653B2

公开(公告)日：2015-06-02

申请号：US13975231

申请日：2013-08-23

Applicant: Thin Film Electronics ASA

Inventor： Erik Scher ,  Steven Molesa ,  Joerg Rockenberger ,  Arvind Kamath ,  Ikuo Mori ,  Wenzhuo Guo ,  Dmitry Karshtedt ,  Vladimir K. Dioumaev

IPC: C09D11/101 ,  C09D5/24 ,  C09D11/322 ,  C09D11/36 ,  C09D11/54 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  H01L29/786 ,  H01B3/02 ,  H01L27/12

CPC classification number: C09D5/24 ,  C09D11/101 ,  C09D11/322 ,  C09D11/36 ,  C09D11/54 ,  H01B3/02 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/28008 ,  H01L27/1292 ,  H01L29/6675 ,  H01L29/78696 ,  Y10T428/24802

Abstract: Embodiments relate to printing features from an ink containing a material precursor. In some embodiments, the material includes an electrically active material, such as a semiconductor, a metal, or a combination thereof. In another embodiment, the material includes a dielectric. The embodiments provide improved printing process conditions that allow for more precise control of the shape, profile and dimensions of a printed line or other feature. The composition(s) and/or method(s) improve control of pinning by increasing the viscosity and mass loading of components in the ink. An exemplary method thus includes printing an ink comprising a material precursor and a solvent in a pattern on the substrate; precipitating the precursor in the pattern to form a pinning line; substantially evaporating the solvent to form a feature of the material precursor defined by the pinning line; and converting the material precursor to the patterned material.

Abstract translation: 实施例涉及从含有材​​料前体的油墨印刷特征。 在一些实施例中，材料包括电活性材料，例如半导体，金属或其组合。 在另一个实施例中，该材料包括电介质。 这些实施例提供改进的印刷工艺条件，其允许更精确地控制印刷线或其它特征的形状，轮廓和尺寸。 组合物和/或方法通过增加油墨中组分的粘度和质量负载来改善对钉扎的控制。 因此，示例性方法包括在基板上以图案印刷包含材料前体和溶剂的油墨; 以图案沉淀前体以形成钉扎线; 基本上蒸发溶剂以形成由钉扎线限定的材料前体的特征; 并将材料前体转化成图案化材料。

公开(公告)号：US09552924B2

公开(公告)日：2017-01-24

申请号：US14613178

申请日：2015-02-03

Applicant: Thin Film Electronics ASA

Inventor： Arvind Kamath ,  Criswell Choi ,  Patrick Smith ,  Erik Scher ,  Jiang Li

IPC: H01G4/228 ,  H01G4/10 ,  H01G4/005 ,  H01G4/33 ,  H01G4/002 ,  H01L27/01 ,  H01L49/02 ,  H01G4/01 ,  H01G13/00 ,  H01G4/30 ,  H01Q1/22

CPC classification number: H01G4/40 ,  H01G4/002 ,  H01G4/005 ,  H01G4/008 ,  H01G4/01 ,  H01G4/10 ,  H01G4/1209 ,  H01G4/224 ,  H01G4/30 ,  H01G4/306 ,  H01G4/33 ,  H01G13/00 ,  H01L23/66 ,  H01L27/016 ,  H01L28/60 ,  H01L2223/6677 ,  H01Q1/22 ,  H01Q1/2283 ,  H01Q1/38 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49016

Abstract: High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.

Abstract translation: 高精度电容器及其形成方法采用精确且高度保形的沉积工艺，用于在各种粗糙度和组成的基底上沉积绝缘层。 该方法通常包括以下步骤：通过原子层沉积（ALD）在金属衬底上沉积第一绝缘层; （b）在所述第一绝缘层上形成第一电容器电极; 和（c）在所述第一绝缘层上形成第二绝缘层，并且在所述第一电容器电极上或与所述第一电容器电极相邻。 实施例提供了一种改进的沉积工艺，其在宽范围的衬底上产生高度保形的绝缘层，从而产生改进的电容器。

公开(公告)号：US10332686B2

公开(公告)日：2019-06-25

申请号：US15385727

申请日：2016-12-20

Applicant: Thin Film Electronics ASA

Inventor： Arvind Kamath ,  Criswell Choi ,  Patrick Smith ,  Erik Scher ,  Jiang Li

IPC: H01G4/06 ,  H01G4/005 ,  H01G4/33 ,  H01G4/40 ,  H01G4/002 ,  H01L27/01 ,  H01L49/02 ,  H01G4/01 ,  H01G13/00 ,  H01G4/10 ,  H01G4/30 ,  H01Q1/22 ,  H01G4/008 ,  H01G4/12 ,  H01G4/224 ,  H01L23/66 ,  H01Q1/38

Abstract: High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.