摘要:
A method for defect segmentation in features on semiconductor substrates is disclosed. After acquisition of an image of a semiconductor substrate, identical features or feature elements are subtracted from one another. The resulting difference function is compared with an upper and a lower threshold in order to identify defects.
摘要:
A method of determining defects in a plurality of images having essentially the same image contents is disclosed. A comparison operation is carried out once three fully comparable images having essentially the same image contents are present in the intermediate memory. The stored individual images are accessed randomly. A paired comparison operation between the three difference images is carried out.
摘要:
A method of determining defects in a plurality of images having essentially the same image contents is disclosed. A comparison operation is carried out once three fully comparable images having essentially the same image contents are present in the intermediate memory. The stored individual images are accessed randomly. A paired comparison operation between the three difference images is carried out.
摘要:
An image (30) of a disc-shaped object (100) is recorded, wherein the entire surface (100O) is captured with a plurality of fields (60). A difference image (31) is formed, by subtracting a reference from each field (60) of the surface (100O) of the disc-shaped object (100), and subject to a color transformation, wherein by a suitable choice of transformation signals in one channel are maximized, while at the same time undesired variations, caused by production, of the fields (60) are moved to a different channel. That combination of transformation and detection channel is chosen for which the largest number of pixels of a field (60) with the defect to be found are located outside the spread of the pixels of the respective field (60) on the surface (100O) of the respective disc-shaped object (100) from production and provide the largest signals for the defect.
摘要:
The invention relates to a method and a device for the optical inspection of the surface of semi-conductor substrate. An image (1) is captured on the surface of the semi-conductor substrate which is covered with a thin layer. Said image is made of a plurality of pixels having associated colour values and intensities. The frequency distribution of pixels having equal colour co-ordination values is calculated (3,4,5) from the colour values in a colour range (2), said colour range having a colour intensity and colour co-ordinates. The thus calculated frequency distribution is used (7, 9) to compare a second correspondingly calculated frequency distribution or a variable derived therefrom. According to the invention, the colour shift (9) and/or differences (7) in the colour distribution are determined according to fluctuations in the intensity of the illumination. The invention also relates to a method and a device for producing a structured semi-conductor substrate by using the above-mentioned method or the above-mentioned device and software for carrying out said method.
摘要:
A method for determining the position of an edge bead removal line of a disk-like object having an edge area and an alignment mark on the edge area is disclosed, wherein the edge area including the edge bead removal line is imaged on a line-by-line basis, an intensity profile I of the imaged edge area including the edge bead removal line is obtained with a camera on a line-by-line basis, and the edge area and the alignment mark are detected, wherein the local intensity maxima I′max of the intensity profile I are plotted as points in a diagram, segment sets are formed in the diagram, the segment sets are fitted in ellipses, and a quality criterion qges is determined for each ellipse.
摘要:
A method for determining the position of an edge bead removal line of a disk-like object having an edge area and an alignment mark on the edge area is disclosed, wherein the edge area including the edge bead removal line is imaged on a line-by-line basis, an intensity profile I of the imaged edge area including the edge bead removal line is obtained with a camera on a line-by-line basis, and the edge area and the alignment mark are detected, wherein the local intensity maxima I′max of the intensity profile I are plotted as points in a diagram, segment sets are formed in the diagram, the segment sets are fitted in ellipses, and a quality criterion qges is determined for each ellipse.
摘要:
The invention relates to a method for detecting defects on the back side of a semiconductor wafer. The brightness distribution of the color values is essentially a normal distribution. An average value and surroundings can be defined using the determined normal distribution, which are criteria for the occurrence of a defect.
摘要:
Defects on a wafer (26) can be detected using bright-field and/or dark-field illumination. The radiation incident onto the wafer (26) has, in this context, a substantial influence on the reliability of the measurement results. To improve the reliability of the measurement results, the wafer (26) is illuminated with an illumination device (12), adjustment of the illumination device (12), in particular its brightness and frequency, being accomplished in consideration of read-out stored illumination setpoints. These illumination setpoints are determined by way of a previous reference measurement.
摘要:
The examination of a wafer (10) has until now been implemented by means of wafer-to-wafer comparison of the entire wafer (10). In order to ensure timely detection of defects, or the development of defects, on a wafer (10) wafer-to-wafer comparison is limited to particular comparison regions (22) selected by the user.