Modular magnetoresistive memory
    1.
    发明授权
    Modular magnetoresistive memory 有权
    模块化磁阻存储器

    公开(公告)号:US09324401B2

    公开(公告)日:2016-04-26

    申请号:US12881072

    申请日:2010-09-13

    IPC分类号: H01L29/82 G11C11/16

    摘要: A magnetoresistive memory element is provided with a read module having a first pinned layer with a magnetoresistance that is readable by a read current received from an external circuit. A write module has a nanocontact that receives a write current from the external circuit and, in turn, imparts a spin torque to a free layer that functions as a shared storage layer for both the read module and the write module.

    摘要翻译: 磁阻存储元件设置有读取模块,该读取模块具有可由从外部电路接收的读取电流读取的具有磁阻的第一固定层。 写入模块具有接收来自外部电路的写入电流的纳米接触,并且进而将自旋转矩赋予用作读取模块和写入模块的共享存储层的自由层。

    MODULAR MAGNETORESISTIVE MEMORY
    2.
    发明申请
    MODULAR MAGNETORESISTIVE MEMORY 有权
    模块化磁记忆

    公开(公告)号:US20110007558A1

    公开(公告)日:2011-01-13

    申请号:US12881072

    申请日:2010-09-13

    IPC分类号: G11C11/00

    摘要: A magnetoresistive memory element is provided with a read module having a first pinned layer with a magnetoresistance that is readable by a read current received from an external circuit. A write module has a nanocontact that receives a write current from the external circuit and, in turn, imparts a spin torque to a free layer that functions as a shared storage layer for both the read module and the write module.

    摘要翻译: 磁阻存储元件设置有读取模块,该读取模块具有可由从外部电路接收的读取电流读取的具有磁阻的第一固定层。 写入模块具有接收来自外部电路的写入电流的纳米接触,并且进而将自旋转矩赋予用作读取模块和写入模块的共享存储层的自由层。

    Modular magnetoresistive memory
    3.
    发明授权
    Modular magnetoresistive memory 有权
    模块化磁阻存储器

    公开(公告)号:US07795696B2

    公开(公告)日:2010-09-14

    申请号:US11969248

    申请日:2008-01-04

    IPC分类号: H01L29/82 G11C11/02

    摘要: A magnetoresistive memory element has a read module with a first pinned layer that has a magnetoresistance that is readable by a read current received from an external circuit. The element has a write module that receives a write current from the external circuit. A coupling module adjacent both the write module and the read module has a free layer that functions as a shared storage layer for both the read module and the write module. The shared storage layer receives spin torque from both the read module and the write module and has a magnetization that is rotatable by the write current.

    摘要翻译: 磁阻存储元件具有读取模块,其具有第一固定层,该第一固定层具有可由从外部电路接收的读取电流读取的磁阻。 该元件具有从外部电路接收写入电流的写入模块。 与写入模块和读取模块相邻的耦合模块具有用作读取模块和写入模块的共享存储层的自由层。 共享存储层从读取模块和写入模块接收自旋扭矩,并且具有可由写入电流旋转的磁化。

    MODULAR MAGNETORESISTIVE MEMORY
    4.
    发明申请
    MODULAR MAGNETORESISTIVE MEMORY 有权
    模块化磁记忆

    公开(公告)号:US20090067225A1

    公开(公告)日:2009-03-12

    申请号:US11969248

    申请日:2008-01-04

    IPC分类号: G11C11/02

    摘要: A magnetoresistive memory element has a read module with a first pinned layer that has a magnetoresistance that is readable by a read current received from an external circuit. The element has a write module that receives a write current from the external circuit. A coupling module adjacent both the write module and the read module has a free layer that functions as a shared storage layer for both the read module and the write module. The shared storage layer receives spin torque from both the read module and the write module and has a magnetization that is rotatable by the write current.

    摘要翻译: 磁阻存储元件具有读取模块,其具有第一固定层,该第一固定层具有可由从外部电路接收的读取电流读取的磁阻。 该元件具有从外部电路接收写入电流的写入模块。 与写入模块和读取模块相邻的耦合模块具有用作读取模块和写入模块的共享存储层的自由层。 共享存储层从读取模块和写入模块接收自旋扭矩,并且具有可由写入电流旋转的磁化。