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公开(公告)号：US09324401B2
公开(公告)日：2016-04-26
申请号：US12881072
申请日：2010-09-13
CPC分类号： G11C11/165 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： A magnetoresistive memory element is provided with a read module having a first pinned layer with a magnetoresistance that is readable by a read current received from an external circuit. A write module has a nanocontact that receives a write current from the external circuit and, in turn, imparts a spin torque to a free layer that functions as a shared storage layer for both the read module and the write module.
摘要翻译： 磁阻存储元件设置有读取模块，该读取模块具有可由从外部电路接收的读取电流读取的具有磁阻的第一固定层。 写入模块具有接收来自外部电路的写入电流的纳米接触，并且进而将自旋转矩赋予用作读取模块和写入模块的共享存储层的自由层。
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公开(公告)号：US20110007558A1
公开(公告)日：2011-01-13
申请号：US12881072
申请日：2010-09-13
IPC分类号： G11C11/00
CPC分类号： G11C11/165 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： A magnetoresistive memory element is provided with a read module having a first pinned layer with a magnetoresistance that is readable by a read current received from an external circuit. A write module has a nanocontact that receives a write current from the external circuit and, in turn, imparts a spin torque to a free layer that functions as a shared storage layer for both the read module and the write module.
摘要翻译： 磁阻存储元件设置有读取模块，该读取模块具有可由从外部电路接收的读取电流读取的具有磁阻的第一固定层。 写入模块具有接收来自外部电路的写入电流的纳米接触，并且进而将自旋转矩赋予用作读取模块和写入模块的共享存储层的自由层。
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公开(公告)号：US07795696B2
公开(公告)日：2010-09-14
申请号：US11969248
申请日：2008-01-04
CPC分类号： G11C11/165 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： A magnetoresistive memory element has a read module with a first pinned layer that has a magnetoresistance that is readable by a read current received from an external circuit. The element has a write module that receives a write current from the external circuit. A coupling module adjacent both the write module and the read module has a free layer that functions as a shared storage layer for both the read module and the write module. The shared storage layer receives spin torque from both the read module and the write module and has a magnetization that is rotatable by the write current.
摘要翻译： 磁阻存储元件具有读取模块，其具有第一固定层，该第一固定层具有可由从外部电路接收的读取电流读取的磁阻。 该元件具有从外部电路接收写入电流的写入模块。 与写入模块和读取模块相邻的耦合模块具有用作读取模块和写入模块的共享存储层的自由层。 共享存储层从读取模块和写入模块接收自旋扭矩，并且具有可由写入电流旋转的磁化。
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公开(公告)号：US20090067225A1
公开(公告)日：2009-03-12
申请号：US11969248
申请日：2008-01-04
IPC分类号： G11C11/02
CPC分类号： G11C11/165 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： A magnetoresistive memory element has a read module with a first pinned layer that has a magnetoresistance that is readable by a read current received from an external circuit. The element has a write module that receives a write current from the external circuit. A coupling module adjacent both the write module and the read module has a free layer that functions as a shared storage layer for both the read module and the write module. The shared storage layer receives spin torque from both the read module and the write module and has a magnetization that is rotatable by the write current.
摘要翻译： 磁阻存储元件具有读取模块，其具有第一固定层，该第一固定层具有可由从外部电路接收的读取电流读取的磁阻。 该元件具有从外部电路接收写入电流的写入模块。 与写入模块和读取模块相邻的耦合模块具有用作读取模块和写入模块的共享存储层的自由层。 共享存储层从读取模块和写入模块接收自旋扭矩，并且具有可由写入电流旋转的磁化。
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公开(公告)号：US06876522B2
公开(公告)日：2005-04-05
申请号：US10214606
申请日：2002-08-08
申请人： Thomas F. Ambrose , Oleg N. Mryasov
发明人： Thomas F. Ambrose , Oleg N. Mryasov
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B2005/3996 , H01F10/3213 , H01F10/3268 , H01F41/307
摘要： A giant magnetoresistive spin valve sensor is provided in which first and second ferromagnetic layers comprise a Heusler alloy. A non-ferromagnetic spacer layer is positioned between the first and second ferromagnetic layers. The non-magnetic spacer layer has an energy band which is similar to the energy bands of the Heusler alloy of the first and second ferromagnetic layers to allow a giant magnetoresistive effect to occur.
摘要翻译： 提供了一种巨磁阻自旋阀传感器，其中第一和第二铁磁层包括Heusler合金。 非铁磁间隔层位于第一和第二铁磁层之间。 非磁性间隔层具有类似于第一和第二铁磁层的Heusler合金的能带的能带，以允许发生巨大的磁阻效应。
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公开(公告)号：US11342491B2
公开(公告)日：2022-05-24
申请号：US17035147
申请日：2020-09-28
摘要： One example includes a magnetic Josephson junction (MJJ) system. The system includes a first superconducting material layer and a second superconducting material layer each configured respectively as a galvanic contacts. The system also includes a ferrimagnetic material layer arranged between the first and second superconducting material layers and that is configured to exhibit a fixed net magnetic moment at a predetermined operating temperature of the MJJ system. The system also includes a ferromagnetic material layer arranged between the first and second superconducting material layers and that is configured to exhibit a variable magnetic orientation in response to an applied magnetic field. The MJJ system can be configured to store a binary logical value based on a direction of the variable magnetic orientation of the ferromagnetic material layer. The system further includes a spacer layer arranged between the ferromagnetic and the ferrimagnetic material layers.
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公开(公告)号：US11024791B1
公开(公告)日：2021-06-01
申请号：US16773325
申请日：2020-01-27
摘要： A memory cell is provided that comprises a first superconductor electrode, a second superconductor electrode, and a magnetic Josephson junction (MJJ) stack disposed between the first superconductor electrode and the second superconductor electrode. The MJJ stack includes a magnetic reference layer and a magnetic storage layer. The memory cell further comprises a magnetically stabilizing structure disposed between the MJJ stack and the second superconductor electrode, wherein the magnetic stabilizing structure magnetically couples with the magnetic reference layer to strengthen the fixed state of the magnetic reference layer.
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8.发明授权Magnetic field sensor including multiple magnetoresistive sensing elements for patterned media 有权磁场传感器包括用于图案化介质的多个磁阻感测元件公开(公告)号：US08411392B2
公开(公告)日：2013-04-02
申请号：US12144901
申请日：2008-06-24
摘要： An apparatus for sensing magnetic domains in a patterned media that includes a first sensing element and a second sensing element in electrical communication with the first sensing element. The first sensing element has an output voltage lead and the second sensing element has an output voltage lead. The patterned media may be a bit patterned media or a track patterned media.
摘要翻译： 一种用于感测图案化介质中的磁畴的装置，其包括与第一感测元件电连通的第一感测元件和第二感测元件。 第一感测元件具有输出电压引线，并且第二感测元件具有输出电压引线。 图案化介质可以是位图案化介质或轨迹图案化介质。
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公开(公告)号：US10720572B1
公开(公告)日：2020-07-21
申请号：US16273777
申请日：2019-02-12
摘要： A memory device includes a memory stack formed on a substrate to program skyrmions within at least one layer of the stack. The skyrmions represent logic states of the memory device. The memory stack further includes a top and bottom electrode to receive electrical current from an external source and to provide the electrical current to the memory stack. A free layer stores a logic state of the skyrmions in response to the electrical current. A Dzyaloshinskii-Moriya (DM) Interaction (DMI) layer in contact with the free layer induces skyrmions in the free layer. A tunnel barrier is interactive with the DMI layer to facilitate detection of the logic state of the skyrmions in response to a read current. At least one fixed magnetic (FM) layer is positioned within the memory stack to facilitate programming of the skyrmions within the free layer in response to the electrical current.
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公开(公告)号：US11631797B2
公开(公告)日：2023-04-18
申请号：US17095379
申请日：2020-11-11
IPC分类号： H01L39/22 , G11B5/31 , G11C11/16 , G11C11/44 , H01F10/32 , H01F41/32 , H01L27/22 , H01L39/02 , H01L39/12 , H01L39/24 , H01L43/02 , H01L43/10 , H01L43/12
摘要： A buffer layer can be used to smooth the surface roughness of a galvanic contact layer (e.g., of niobium) in an electronic device, the buffer layer being made of a stack of at least four (e.g., six) layers of a face-centered cubic (FCC) crystal structure material, such as copper, the at least four FCC material layers alternating with at least three layers of a body-centered cubic (BCC) crystal structure material, such as niobium, wherein each of the FCC material layers and BCC material layers is between about five and about ten angstroms thick. The buffer layer can provide the smoothing while still maintaining desirable transport properties of a device in which the buffer layer is used, such as a magnetic Josephson junction, and magnetics of an overlying magnetic layer in the device, thereby permitting for improved magnetic Josephson junctions (MJJs) and thus improved superconducting memory arrays and other devices.
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