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1.发明授权Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations 失效具有辅助电极的电镀系统，用于主反应室外部用于接触清洁操作公开(公告)号：US06921468B2
公开(公告)日：2005-07-26
申请号：US09910481
申请日：2001-07-19
CPC分类号： H01L21/67126 , C25D5/08 , C25D17/001
摘要： A system for electroplating a semiconductor wafer is set forth. The system comprises a first electrode in electrical contact with the semiconductor wafer and a second electrode. The first electrode and the semiconductor wafer form a cathode during electroplating of the semiconductor wafer. The second electrode forms an anode during electroplating of the semiconductor wafer. A reaction container defining a reaction chamber is also employed. The reaction chamber comprises an electrically conductive plating solution. At least a portion of each of the first electrode, the second electrode, and the semiconductor wafer contact the plating solution during electroplating of the semiconductor wafer. An auxiliary electrode is disposed exterior to the reaction chamber and positioned for contact with plating solution exiting the reaction chamber during cleaning of the first electrode to thereby provide an electrically conductive path between the auxiliary electrode and the first electrode. A power supply system is connected to supply plating power to the first and second electrodes during electroplating of the semiconductor wafer and is further connected to render the first electrode an anode and the auxiliary electrode a cathode during cleaning of the first electrode.
摘要翻译： 阐述了一种用于电镀半导体晶片的系统。 该系统包括与半导体晶片电接触的第一电极和第二电极。 第一电极和半导体晶片在半导体晶片的电镀期间形成阴极。 第二电极在电镀半导体晶片期间形成阳极。 还使用限定反应室的反应容器。 反应室包括导电电镀液。 在半导体晶片的电镀期间，第一电极，第二电极和半导体晶片中的每一个的至少一部分与镀液接触。 辅助电极设置在反应室的外部，并且定位成在清洁第一电极期间与离开反应室的电镀液接触，从而在辅助电极和第一电极之间提供导电路径。 电源系统被连接以在半导体晶片的电镀期间向第一和第二电极提供电镀电力，并且在第一电极的清洁期间进一步连接以使第一电极为阳极，辅助电极为阴极。
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公开(公告)号：US06599412B1
公开(公告)日：2003-07-29
申请号：US08940670
申请日：1997-09-30
IPC分类号： C25D2100
CPC分类号： H01L21/67751 , C25D5/08 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/08 , H01L21/67126
摘要： Methods and apparatuses for in-situ cleaning of semiconductor electroplating electrodes to remove plating metal without requiring !the manual removal of the electrodes from the semiconductor plating equipment. The electrode is placed into the plating liquid and, an electrical current having reverse polarity is passed between the electrode and plating liquid. Plating deposits which have accumulated on the electrode are electrochemically dissolved and removed from the electrode.
摘要翻译： 用于半导体电镀电极的原位清洁以去除电镀金属的方法和装置，而不需要从半导体电镀设备手动去除电极。 将电极放置在电镀液中，并且具有相反极性的电流在电极和电镀液之间通过。 积聚在电极上的电镀沉积物电化学溶解并从电极中去除。
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公开(公告)号：US6099712A
公开(公告)日：2000-08-08
申请号：US940930
申请日：1997-09-30
IPC分类号： C25D5/08 , C25D7/12 , C25D5/02 , H01L21/288 , H01L21/445
CPC分类号： C25D17/001 , C25D5/08 , C25D7/123
摘要： A semiconductor plating bowl which includes a shield on a consumable anode. The shield is preferably made from a dielectric material, such as a plastic. The shield is placed in the area upon which flowing plating fluid would otherwise impinge upon the processing workpiece. The shield has the surprising benefit of reducing the amount of organic additives consumed in the plating process. This is believed to occur because films that otherwise may form on the anode are not disrupted by the flow of plating liquids thereover.
摘要翻译： 一种半导体电镀槽，其包括在可消耗阳极上的屏蔽。 该屏蔽件优选由诸如塑料的介电材料制成。 屏蔽件放置在流动的电镀液体将会撞击到加工工件上的区域中。 屏蔽具有减少电镀过程中消耗的有机添加剂的量的惊人效果。 据信这是因为在阳极上可能形成的膜不会被其上的镀液流动所破坏。
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4.发明授权Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations 失效具有辅助电极的电镀系统，用于主反应室外部用于接触清洁操作公开(公告)号：US06270647B1
公开(公告)日：2001-08-07
申请号：US09387338
申请日：1999-08-31
IPC分类号： C25D2100
CPC分类号： H01L21/67126 , C25D5/08 , C25D7/12 , C25D17/001 , H01L21/6719 , H01L21/6723 , H01L21/67259 , H01L21/67769 , H01L21/67781
摘要： A system for electroplating a semiconductor wafer is set forth. The system comprises a first electrode in electrical contact with the semiconductor wafer and a second electrode. The first electrode and the semiconductor wafer form a cathode during electroplating of the semiconductor wafer. The second electrode forms an anode during electroplating of the semiconductor wafer. A reaction container defining a reaction chamber is also employed. The reaction chamber comprises an electrically conductive plating solution. At least a portion of each of the first electrode, the second electrode, and the semiconductor wafer contact the plating solution during electroplating of the semiconductor wafer. An auxiliary electrode is disposed exterior to the reaction chamber and positioned for contact with plating solution exiting the reaction chamber during cleaning of the first electrode to thereby provide an electrically conductive path between the auxiliary electrode and the first electrode. A power supply system is connected to supply plating power to the first and second electrodes during electroplating of the semiconductor wafer and is further connected to render the first electrode an anode and the auxiliary electrode a cathode during cleaning of the first electrode.
摘要翻译： 阐述了一种用于电镀半导体晶片的系统。 该系统包括与半导体晶片电接触的第一电极和第二电极。 第一电极和半导体晶片在半导体晶片的电镀期间形成阴极。 第二电极在电镀半导体晶片期间形成阳极。 还使用限定反应室的反应容器。 反应室包括导电电镀液。 在半导体晶片的电镀期间，第一电极，第二电极和半导体晶片中的每一个的至少一部分与镀液接触。 辅助电极设置在反应室的外部，并且定位成在清洁第一电极期间与离开反应室的电镀液接触，从而在辅助电极和第一电极之间提供导电路径。 电源系统被连接以在半导体晶片的电镀期间向第一和第二电极提供电镀电力，并且在第一电极的清洁期间进一步连接以使第一电极为阳极，辅助电极为阴极。
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5.发明授权Semiconductor plating system workpiece support having workpiece engaging electrode with pre-conditioned contact face 失效半导体电镀系统工件支撑件，具有工件接合电极与预调节接触面公开(公告)号：US06776892B1
公开(公告)日：2004-08-17
申请号：US09525930
申请日：2000-03-14
IPC分类号： C25D502
CPC分类号： H01L21/68728 , H01L21/68785
摘要： A semiconductor workpiece holder used in electroplating systems for plating metal layers onto a semiconductor workpieces, and is of particular advantage in connection with plating copper onto semiconductor materials. The workpiece holder includes electrodes which have a contact face which bears against the workpiece and conducts current therebetween. The contact face is provided with a contact face outer contacting surface which is made from a contact face material similar similar to the workpiece plating material which is to be plated onto the semiconductor workpiece. The contact face can be formed by pre-conditioned an electrode contact using a plating metal which is similar to the plating materials which is to be plated onto the semiconductor workpiece.
摘要翻译： 一种用于电镀系统中用于将金属层镀在半导体工件上的半导体工件保持器，并且在将铜电镀到半导体材料上方面具有特别的优点。 工件保持器包括具有抵靠工件的接触面并在其间传导电流的电极。 接触面设置有接触面外接触表面，该接触面外接触表面由类似于要被电镀到半导体工件上的工件电镀材料类似的接触面材料制成。 接触面可以通过使用类似于待镀覆到半导体工件上的电镀材料的电镀金属预先调节电极接触来形成。
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6.发明授权Semiconductor plating system workpiece support having workpiece-engaging electrode with submerged conductive current transfer areas 失效半导体电镀系统工件支架，具有工件接合电极与浸没的导电电流传输区域公开(公告)号：US06454926B1
公开(公告)日：2002-09-24
申请号：US08940669
申请日：1997-09-30
IPC分类号： C25D500
CPC分类号： C25D17/001 , C25D7/123 , C25D17/10 , Y10S204/07
摘要： A semiconductor workpiece holder used in electroplating systems for plating metal layers, such as copper, onto a semiconductor workpiece. The workpiece holder includes electrodes which extend and are partially submerged in a liquid plating bath. The electrodes have a contact face which bears against the workpiece and conducts current therebetween. The submersible portions of the electrodes are partially covered with a dielectric layer or surface and partially covered with a conductive layer or surface. The conductive surface is preferably spaced from the contact face and placed in direct contact with the plating bath to allow diversion of some of the plating current directly between the electrode and plating bath. Associated methods are also described.
摘要翻译： 一种用于电镀系统的半导体工件保持架，用于将诸如铜的金属层电镀到半导体工件上。 工件保持器包括延伸并部分浸没在液体镀浴中的电极。 电极具有抵靠工件并在其间传导电流的接触面。 电极的潜水部分被电介质层或表面部分覆盖，并部分覆盖有导电层或表面。 导电表面优选与接触面间隔开并与电镀槽直接接触，以允许直接在电极和电镀槽之间转移一些电镀电流。 还描述了相关方法。
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公开(公告)号：US20130299343A1
公开(公告)日：2013-11-14
申请号：US13468273
申请日：2012-05-10
IPC分类号： C25D19/00
CPC分类号： C25D17/12 , C25D7/123 , C25D17/001 , C25D17/002
摘要： An electroplating processor includes an electrode plate having a continuous flow path formed in a channel. The flow path may optionally be a coiled flow path. One or more electrodes are positioned in the channel. A membrane plate is attached to the electrode plate with a membrane in between them. Electrolyte moves through the flow path at a high velocity, preventing bubbles from sticking to the bottom surface of membrane. Any bubbles in the flow path are entrained in the fast moving electrolyte and carried away from the membrane. The electroplating processor may alternatively have a wire electrode extending through a tubular membrane formed into a coil or other shape, optionally including shapes having straight segments.
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公开(公告)号：US08968533B2
公开(公告)日：2015-03-03
申请号：US13468273
申请日：2012-05-10
CPC分类号： C25D17/12 , C25D7/123 , C25D17/001 , C25D17/002
摘要： An electroplating processor includes an electrode plate having a continuous flow path formed in a channel. The flow path may optionally be a coiled flow path. One or more electrodes are positioned in the channel. A membrane plate is attached to the electrode plate with a membrane in between them. Electrolyte moves through the flow path at a high velocity, preventing bubbles from sticking to the bottom surface of membrane. Any bubbles in the flow path are entrained in the fast moving electrolyte and carried away from the membrane. The electroplating processor may alternatively have a wire electrode extending through a tubular membrane formed into a coil or other shape, optionally including shapes having straight segments.
摘要翻译： 电镀处理器包括具有形成在通道中的连续流路的电极板。 流路可以可选地是卷绕的流动路径。 一个或多个电极定位在通道中。 膜板在它们之间附着有电极板。 电解液以高速移动通过流路，防止气泡粘到膜底部。 流动路径中的任何气泡被夹带在快速移动的电解质中并从膜中带走。 电镀处理器可以替代地具有延伸通过形成为线圈或其它形状的管状膜的线电极，任选地包括具有直段的形状。
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