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1.发明授权Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations 失效具有辅助电极的电镀系统，用于主反应室外部用于接触清洁操作公开(公告)号：US06921468B2
公开(公告)日：2005-07-26
申请号：US09910481
申请日：2001-07-19
CPC分类号： H01L21/67126 , C25D5/08 , C25D17/001
摘要： A system for electroplating a semiconductor wafer is set forth. The system comprises a first electrode in electrical contact with the semiconductor wafer and a second electrode. The first electrode and the semiconductor wafer form a cathode during electroplating of the semiconductor wafer. The second electrode forms an anode during electroplating of the semiconductor wafer. A reaction container defining a reaction chamber is also employed. The reaction chamber comprises an electrically conductive plating solution. At least a portion of each of the first electrode, the second electrode, and the semiconductor wafer contact the plating solution during electroplating of the semiconductor wafer. An auxiliary electrode is disposed exterior to the reaction chamber and positioned for contact with plating solution exiting the reaction chamber during cleaning of the first electrode to thereby provide an electrically conductive path between the auxiliary electrode and the first electrode. A power supply system is connected to supply plating power to the first and second electrodes during electroplating of the semiconductor wafer and is further connected to render the first electrode an anode and the auxiliary electrode a cathode during cleaning of the first electrode.
摘要翻译： 阐述了一种用于电镀半导体晶片的系统。 该系统包括与半导体晶片电接触的第一电极和第二电极。 第一电极和半导体晶片在半导体晶片的电镀期间形成阴极。 第二电极在电镀半导体晶片期间形成阳极。 还使用限定反应室的反应容器。 反应室包括导电电镀液。 在半导体晶片的电镀期间，第一电极，第二电极和半导体晶片中的每一个的至少一部分与镀液接触。 辅助电极设置在反应室的外部，并且定位成在清洁第一电极期间与离开反应室的电镀液接触，从而在辅助电极和第一电极之间提供导电路径。 电源系统被连接以在半导体晶片的电镀期间向第一和第二电极提供电镀电力，并且在第一电极的清洁期间进一步连接以使第一电极为阳极，辅助电极为阴极。
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公开(公告)号：US06599412B1
公开(公告)日：2003-07-29
申请号：US08940670
申请日：1997-09-30
IPC分类号： C25D2100
CPC分类号： H01L21/67751 , C25D5/08 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/08 , H01L21/67126
摘要： Methods and apparatuses for in-situ cleaning of semiconductor electroplating electrodes to remove plating metal without requiring !the manual removal of the electrodes from the semiconductor plating equipment. The electrode is placed into the plating liquid and, an electrical current having reverse polarity is passed between the electrode and plating liquid. Plating deposits which have accumulated on the electrode are electrochemically dissolved and removed from the electrode.
摘要翻译： 用于半导体电镀电极的原位清洁以去除电镀金属的方法和装置，而不需要从半导体电镀设备手动去除电极。 将电极放置在电镀液中，并且具有相反极性的电流在电极和电镀液之间通过。 积聚在电极上的电镀沉积物电化学溶解并从电极中去除。
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3.发明授权Semiconductor plating system workpiece support having workpiece engaging electrode with pre-conditioned contact face 失效半导体电镀系统工件支撑件，具有工件接合电极与预调节接触面公开(公告)号：US06776892B1
公开(公告)日：2004-08-17
申请号：US09525930
申请日：2000-03-14
IPC分类号： C25D502
CPC分类号： H01L21/68728 , H01L21/68785
摘要： A semiconductor workpiece holder used in electroplating systems for plating metal layers onto a semiconductor workpieces, and is of particular advantage in connection with plating copper onto semiconductor materials. The workpiece holder includes electrodes which have a contact face which bears against the workpiece and conducts current therebetween. The contact face is provided with a contact face outer contacting surface which is made from a contact face material similar similar to the workpiece plating material which is to be plated onto the semiconductor workpiece. The contact face can be formed by pre-conditioned an electrode contact using a plating metal which is similar to the plating materials which is to be plated onto the semiconductor workpiece.
摘要翻译： 一种用于电镀系统中用于将金属层镀在半导体工件上的半导体工件保持器，并且在将铜电镀到半导体材料上方面具有特别的优点。 工件保持器包括具有抵靠工件的接触面并在其间传导电流的电极。 接触面设置有接触面外接触表面，该接触面外接触表面由类似于要被电镀到半导体工件上的工件电镀材料类似的接触面材料制成。 接触面可以通过使用类似于待镀覆到半导体工件上的电镀材料的电镀金属预先调节电极接触来形成。
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公开(公告)号：US6099712A
公开(公告)日：2000-08-08
申请号：US940930
申请日：1997-09-30
IPC分类号： C25D5/08 , C25D7/12 , C25D5/02 , H01L21/288 , H01L21/445
CPC分类号： C25D17/001 , C25D5/08 , C25D7/123
摘要： A semiconductor plating bowl which includes a shield on a consumable anode. The shield is preferably made from a dielectric material, such as a plastic. The shield is placed in the area upon which flowing plating fluid would otherwise impinge upon the processing workpiece. The shield has the surprising benefit of reducing the amount of organic additives consumed in the plating process. This is believed to occur because films that otherwise may form on the anode are not disrupted by the flow of plating liquids thereover.
摘要翻译： 一种半导体电镀槽，其包括在可消耗阳极上的屏蔽。 该屏蔽件优选由诸如塑料的介电材料制成。 屏蔽件放置在流动的电镀液体将会撞击到加工工件上的区域中。 屏蔽具有减少电镀过程中消耗的有机添加剂的量的惊人效果。 据信这是因为在阳极上可能形成的膜不会被其上的镀液流动所破坏。
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5.发明授权Semiconductor plating system workpiece support having workpiece-engaging electrode with submerged conductive current transfer areas 失效半导体电镀系统工件支架，具有工件接合电极与浸没的导电电流传输区域公开(公告)号：US06454926B1
公开(公告)日：2002-09-24
申请号：US08940669
申请日：1997-09-30
IPC分类号： C25D500
CPC分类号： C25D17/001 , C25D7/123 , C25D17/10 , Y10S204/07
摘要： A semiconductor workpiece holder used in electroplating systems for plating metal layers, such as copper, onto a semiconductor workpiece. The workpiece holder includes electrodes which extend and are partially submerged in a liquid plating bath. The electrodes have a contact face which bears against the workpiece and conducts current therebetween. The submersible portions of the electrodes are partially covered with a dielectric layer or surface and partially covered with a conductive layer or surface. The conductive surface is preferably spaced from the contact face and placed in direct contact with the plating bath to allow diversion of some of the plating current directly between the electrode and plating bath. Associated methods are also described.
摘要翻译： 一种用于电镀系统的半导体工件保持架，用于将诸如铜的金属层电镀到半导体工件上。 工件保持器包括延伸并部分浸没在液体镀浴中的电极。 电极具有抵靠工件并在其间传导电流的接触面。 电极的潜水部分被电介质层或表面部分覆盖，并部分覆盖有导电层或表面。 导电表面优选与接触面间隔开并与电镀槽直接接触，以允许直接在电极和电镀槽之间转移一些电镀电流。 还描述了相关方法。
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6.发明授权Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations 失效具有辅助电极的电镀系统，用于主反应室外部用于接触清洁操作公开(公告)号：US06270647B1
公开(公告)日：2001-08-07
申请号：US09387338
申请日：1999-08-31
IPC分类号： C25D2100
CPC分类号： H01L21/67126 , C25D5/08 , C25D7/12 , C25D17/001 , H01L21/6719 , H01L21/6723 , H01L21/67259 , H01L21/67769 , H01L21/67781
摘要： A system for electroplating a semiconductor wafer is set forth. The system comprises a first electrode in electrical contact with the semiconductor wafer and a second electrode. The first electrode and the semiconductor wafer form a cathode during electroplating of the semiconductor wafer. The second electrode forms an anode during electroplating of the semiconductor wafer. A reaction container defining a reaction chamber is also employed. The reaction chamber comprises an electrically conductive plating solution. At least a portion of each of the first electrode, the second electrode, and the semiconductor wafer contact the plating solution during electroplating of the semiconductor wafer. An auxiliary electrode is disposed exterior to the reaction chamber and positioned for contact with plating solution exiting the reaction chamber during cleaning of the first electrode to thereby provide an electrically conductive path between the auxiliary electrode and the first electrode. A power supply system is connected to supply plating power to the first and second electrodes during electroplating of the semiconductor wafer and is further connected to render the first electrode an anode and the auxiliary electrode a cathode during cleaning of the first electrode.
摘要翻译： 阐述了一种用于电镀半导体晶片的系统。 该系统包括与半导体晶片电接触的第一电极和第二电极。 第一电极和半导体晶片在半导体晶片的电镀期间形成阴极。 第二电极在电镀半导体晶片期间形成阳极。 还使用限定反应室的反应容器。 反应室包括导电电镀液。 在半导体晶片的电镀期间，第一电极，第二电极和半导体晶片中的每一个的至少一部分与镀液接触。 辅助电极设置在反应室的外部，并且定位成在清洁第一电极期间与离开反应室的电镀液接触，从而在辅助电极和第一电极之间提供导电路径。 电源系统被连接以在半导体晶片的电镀期间向第一和第二电极提供电镀电力，并且在第一电极的清洁期间进一步连接以使第一电极为阳极，辅助电极为阴极。
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7.发明授权公开(公告)号：US07438788B2
公开(公告)日：2008-10-21
申请号：US11096477
申请日：2005-03-29
CPC分类号： C25D17/001 , C25D5/18 , C25D7/123 , C25D17/10
摘要： An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel. In one embodiment, the reaction vessel includes: an outer container having an outer wall; a distributor coupled to the outer container, the distributor having a first outlet configured to introduce a primary flow into the outer container and at least one second outlet configured to introduce a secondary flow into the outer container separate from the primary flow; a primary flow guide in the outer container coupled to the distributor to receive the primary flow from the first outlet and direct it to a workpiece processing site; a dielectric field shaping unit in the outer container coupled to the distributor to receive the secondary flow from the second outlet, the field shaping unit being configured to contain the secondary flow separate from the primary flow through at least a portion of the outer container, and the field shaping unit having at least one electrode compartment through which the secondary flow can pass while the secondary flow is separate from the primary flow; an electrode in the electrode compartment; and an interface member carried by the field shaping unit downstream from the electrode, the interface member being in fluid communication with the secondary flow in the electrode compartment, and the interface member being configured to prevent selected matter of the secondary flow from passing to the primary flow.
摘要翻译： 用于反应容器中微电子工件的电化学处理的装置和方法。 在一个实施例中，反应容器包括：具有外壁的外容器; 分配器，其耦合到所述外部容器，所述分配器具有构造成将主流引入所述外部容器中的第一出口和构造成将二次流引导到与所述主流分离的所述外部容器中的至少一个第二出口; 外部容器中的主要流动引导件联接到分配器以接收来自第一出口的主流并将其引导到工件加工位置; 所述外容器中的电介质场成形单元联接到所述分配器以接收来自所述第二出口的二次流，所述场整形单元构造成容纳所述次流与所述主流分离通过所述外容器的至少一部分，以及 所述场成形单元具有至少一个电极室，所述二次流可以通过所述至少一个电极室，而所述二次流与所述主流分离; 电极室中的电极; 以及由所述场成形单元承载在所述电极的下游的界面构件，所述界面构件与所述电极室中的所述次流体流体连通，并且所述界面构件被构造成防止所述二次流的选定物质通过所述主流 流。
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8.发明授权Apparatus and method for electrochemically depositing metal on a semiconductor workpiece 失效在半导体工件上电化学沉积金属的装置和方法公开(公告)号：US07332066B2
公开(公告)日：2008-02-19
申请号：US11053050
申请日：2005-02-07
CPC分类号： H01L21/76868 , C25D3/38 , C25D5/08 , C25D5/10 , C25D5/50 , C25D7/123 , C25D17/02 , C25D17/10 , C25D17/12 , H01L21/288 , H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L2221/1089 , Y10S204/07 , Y10T428/12493
摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.
摘要翻译： 用于对诸如半导体工件的工件进行金属化的工艺。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。
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9.发明授权公开(公告)号：US07189318B2
公开(公告)日：2007-03-13
申请号：US09866391
申请日：2001-05-24
CPC分类号： C25D21/12 , C25D17/001 , C25F3/30
摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.
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10.发明授权Semiconductor plating system workpiece support having workpiece-engaging electrode with pre-conditioned contact face 失效半导体电镀系统工件支撑件，具有工件接合电极和预接触面公开(公告)号：US06936153B1
公开(公告)日：2005-08-30
申请号：US08940686
申请日：1997-09-30
申请人： Thomas L. Ritzdorf
发明人： Thomas L. Ritzdorf
IPC分类号： H01L21/687 , C25D17/00
CPC分类号： H01L21/68728 , H01L21/68785
摘要： A semiconductor workpiece holder used in electroplating systems for plating metal layers onto a semiconductor workpieces, and is of particular advantage in connection with plating copper onto semiconductor materials. The workpiece holder includes electrodes which have a contact face which bears against the workpiece and conducts current therebetween. The contact face is provided with a contact face outer contacting surface which is made from a contact face material similar similar to the workpiece plating material which is to be plated onto the semiconductor workpiece. The contact face can be formed by pre-conditioned an electrode contact using a plating metal which is similar to the plating materials which is to be plated onto the semiconductor workpiece.
摘要翻译： 一种用于电镀系统中用于将金属层镀在半导体工件上的半导体工件保持器，并且在将铜电镀到半导体材料上方面具有特别的优点。 工件保持器包括具有抵靠工件的接触面并在其间传导电流的电极。 接触面设置有接触面外接触表面，该接触面外接触表面由类似于要被电镀到半导体工件上的工件电镀材料类似的接触面材料制成。 接触面可以通过使用类似于待镀覆到半导体工件上的电镀材料的电镀金属预先调节电极接触来形成。
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