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1.发明授权Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations 失效具有辅助电极的电镀系统，用于主反应室外部用于接触清洁操作公开(公告)号：US06921468B2
公开(公告)日：2005-07-26
申请号：US09910481
申请日：2001-07-19
CPC分类号： H01L21/67126 , C25D5/08 , C25D17/001
摘要： A system for electroplating a semiconductor wafer is set forth. The system comprises a first electrode in electrical contact with the semiconductor wafer and a second electrode. The first electrode and the semiconductor wafer form a cathode during electroplating of the semiconductor wafer. The second electrode forms an anode during electroplating of the semiconductor wafer. A reaction container defining a reaction chamber is also employed. The reaction chamber comprises an electrically conductive plating solution. At least a portion of each of the first electrode, the second electrode, and the semiconductor wafer contact the plating solution during electroplating of the semiconductor wafer. An auxiliary electrode is disposed exterior to the reaction chamber and positioned for contact with plating solution exiting the reaction chamber during cleaning of the first electrode to thereby provide an electrically conductive path between the auxiliary electrode and the first electrode. A power supply system is connected to supply plating power to the first and second electrodes during electroplating of the semiconductor wafer and is further connected to render the first electrode an anode and the auxiliary electrode a cathode during cleaning of the first electrode.
摘要翻译： 阐述了一种用于电镀半导体晶片的系统。 该系统包括与半导体晶片电接触的第一电极和第二电极。 第一电极和半导体晶片在半导体晶片的电镀期间形成阴极。 第二电极在电镀半导体晶片期间形成阳极。 还使用限定反应室的反应容器。 反应室包括导电电镀液。 在半导体晶片的电镀期间，第一电极，第二电极和半导体晶片中的每一个的至少一部分与镀液接触。 辅助电极设置在反应室的外部，并且定位成在清洁第一电极期间与离开反应室的电镀液接触，从而在辅助电极和第一电极之间提供导电路径。 电源系统被连接以在半导体晶片的电镀期间向第一和第二电极提供电镀电力，并且在第一电极的清洁期间进一步连接以使第一电极为阳极，辅助电极为阴极。
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公开(公告)号：US06599412B1
公开(公告)日：2003-07-29
申请号：US08940670
申请日：1997-09-30
IPC分类号： C25D2100
CPC分类号： H01L21/67751 , C25D5/08 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/08 , H01L21/67126
摘要： Methods and apparatuses for in-situ cleaning of semiconductor electroplating electrodes to remove plating metal without requiring !the manual removal of the electrodes from the semiconductor plating equipment. The electrode is placed into the plating liquid and, an electrical current having reverse polarity is passed between the electrode and plating liquid. Plating deposits which have accumulated on the electrode are electrochemically dissolved and removed from the electrode.
摘要翻译： 用于半导体电镀电极的原位清洁以去除电镀金属的方法和装置，而不需要从半导体电镀设备手动去除电极。 将电极放置在电镀液中，并且具有相反极性的电流在电极和电镀液之间通过。 积聚在电极上的电镀沉积物电化学溶解并从电极中去除。
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公开(公告)号：US6099712A
公开(公告)日：2000-08-08
申请号：US940930
申请日：1997-09-30
IPC分类号： C25D5/08 , C25D7/12 , C25D5/02 , H01L21/288 , H01L21/445
CPC分类号： C25D17/001 , C25D5/08 , C25D7/123
摘要： A semiconductor plating bowl which includes a shield on a consumable anode. The shield is preferably made from a dielectric material, such as a plastic. The shield is placed in the area upon which flowing plating fluid would otherwise impinge upon the processing workpiece. The shield has the surprising benefit of reducing the amount of organic additives consumed in the plating process. This is believed to occur because films that otherwise may form on the anode are not disrupted by the flow of plating liquids thereover.
摘要翻译： 一种半导体电镀槽，其包括在可消耗阳极上的屏蔽。 该屏蔽件优选由诸如塑料的介电材料制成。 屏蔽件放置在流动的电镀液体将会撞击到加工工件上的区域中。 屏蔽具有减少电镀过程中消耗的有机添加剂的量的惊人效果。 据信这是因为在阳极上可能形成的膜不会被其上的镀液流动所破坏。
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4.发明授权Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations 失效具有辅助电极的电镀系统，用于主反应室外部用于接触清洁操作公开(公告)号：US06270647B1
公开(公告)日：2001-08-07
申请号：US09387338
申请日：1999-08-31
IPC分类号： C25D2100
CPC分类号： H01L21/67126 , C25D5/08 , C25D7/12 , C25D17/001 , H01L21/6719 , H01L21/6723 , H01L21/67259 , H01L21/67769 , H01L21/67781
摘要： A system for electroplating a semiconductor wafer is set forth. The system comprises a first electrode in electrical contact with the semiconductor wafer and a second electrode. The first electrode and the semiconductor wafer form a cathode during electroplating of the semiconductor wafer. The second electrode forms an anode during electroplating of the semiconductor wafer. A reaction container defining a reaction chamber is also employed. The reaction chamber comprises an electrically conductive plating solution. At least a portion of each of the first electrode, the second electrode, and the semiconductor wafer contact the plating solution during electroplating of the semiconductor wafer. An auxiliary electrode is disposed exterior to the reaction chamber and positioned for contact with plating solution exiting the reaction chamber during cleaning of the first electrode to thereby provide an electrically conductive path between the auxiliary electrode and the first electrode. A power supply system is connected to supply plating power to the first and second electrodes during electroplating of the semiconductor wafer and is further connected to render the first electrode an anode and the auxiliary electrode a cathode during cleaning of the first electrode.
摘要翻译： 阐述了一种用于电镀半导体晶片的系统。 该系统包括与半导体晶片电接触的第一电极和第二电极。 第一电极和半导体晶片在半导体晶片的电镀期间形成阴极。 第二电极在电镀半导体晶片期间形成阳极。 还使用限定反应室的反应容器。 反应室包括导电电镀液。 在半导体晶片的电镀期间，第一电极，第二电极和半导体晶片中的每一个的至少一部分与镀液接触。 辅助电极设置在反应室的外部，并且定位成在清洁第一电极期间与离开反应室的电镀液接触，从而在辅助电极和第一电极之间提供导电路径。 电源系统被连接以在半导体晶片的电镀期间向第一和第二电极提供电镀电力，并且在第一电极的清洁期间进一步连接以使第一电极为阳极，辅助电极为阴极。
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5.发明授权公开(公告)号：US06508920B1
公开(公告)日：2003-01-21
申请号：US09387577
申请日：1999-08-31
IPC分类号： C25D1700
CPC分类号： H01L21/67173 , C25D5/022 , C25D5/50 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/6723 , H01L21/76838 , H01L21/76877 , H01L21/76883
摘要： A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.
摘要翻译： 阐述了在金属化的微电子工件（例如半导体晶片）的表面处填充凹陷微结构的方法。 根据该方法，金属层通过诸如电镀工艺的工艺沉积到微结构中，该工艺产生足够小的金属颗粒，以便基本上填充凹陷的微结构。 沉积的金属随后在低于约100摄氏度的温度下进行退火处理，并且甚至可以在环境室温下进行，以允许提供最佳电性能的晶粒生长。 还提出了用于执行独特退火工艺的各种新型装置。
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公开(公告)号：US07300562B2
公开(公告)日：2007-11-27
申请号：US10667802
申请日：2003-09-22
IPC分类号： C25D3/56
CPC分类号： C25D17/001 , C25D7/123
摘要： The present invention is directed to methods and compositions for depositing a noble metal alloy onto a microelectronic workpiece. In one particular aspect of the invention, a platinum metal alloy is electrochemically deposited on a surface of the workpiece from an acidic plating composition. The plated compositions when combined with high-k dielectric material are useful in capacitor structures.
摘要翻译： 本发明涉及将贵金属合金沉积到微电子工件上的方法和组合物。 在本发明的一个特定方面，铂金属合金由酸性电镀组合物电化学沉积在工件的表面上。 当与高k电介质材料组合时，电镀组合物可用于电容器结构。
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7.发明授权公开(公告)号：US06551479B1
公开(公告)日：2003-04-22
申请号：US09572603
申请日：2000-05-17
申请人： Lyndon W. Graham , Thomas C. Taylor , Thomas L. Ritzdorf , Fredrick A. Lindberg , Bradley C. Carpenter
发明人： Lyndon W. Graham , Thomas C. Taylor , Thomas L. Ritzdorf , Fredrick A. Lindberg , Bradley C. Carpenter
IPC分类号： G01N2748
CPC分类号： G01N27/48 , G01N27/4161
摘要： A method for measuring a target constituent of an electroplating solution using an electroanalytical technique is set forth in which the electroplating solution includes one or more constituents whose by-products skew an initial electrical response to an energy input of the electroanalytical technique. The method comprises a first step in which an electroanalytical measurement cycle of the target constituent is initiated by providing an energy input to a pair of electrodes disposed in the electroplating solution. The energy input to the pair of electrodes is provided for at least a predetermined time period corresponding to a time period in which the electroanalytical measurement cycle reaches a steady-state condition. In a subsequent step, an electroanalytical measurement of the energy output of the electroanalytical technique is taken after the electroanalytical measurement cycle has reached the steady-state condition. The electroanalytical measurement is then used to determine an amount of the target constituent in the electroplating solution. An automatic dosing system that includes the foregoing method and/or one or more known electroanalytical techniques in a close-loop system is also set forth.
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8.发明授权Methods for controlling and/or measuring additive concentration in an electroplating bath 有权用于控制和/或测量电镀浴中的添加剂浓度的方法公开(公告)号：US06365033B1
公开(公告)日：2002-04-02
申请号：US09387084
申请日：1999-08-31
申请人： Lyndon W. Graham , Thomas C. Taylor , Thomas L. Ritzdorf , Fredrick A. Lindberg , Bradley C. Carpenter
发明人： Lyndon W. Graham , Thomas C. Taylor , Thomas L. Ritzdorf , Fredrick A. Lindberg , Bradley C. Carpenter
IPC分类号： G01N2748
CPC分类号： G01N27/48 , G01N27/4161
摘要： A method for measuring a target constituent of an electroplating solution using an electroanalytical technique is set forth in which the electroplating solution includes one or more constituents whose by-products skew an initial electrical response to an energy input of the electroanalytical technique. The method comprises a first step in which an electroanalytical measurement cycle of the target constituent is initiated by providing an energy input to a pair of electrodes disposed in the electroplating solution. The energy input to the pair of electrodes is provided for at least a predetermined time period corresponding to a time period in which the electroanalytical measurement cycle reaches a steady-state condition. In a subsequent step, an electroanalytical measurement of the energy output of the electroanalytical technique is taken after the electroanalytical measurement cycle has reached the steady-state condition. The electroanalytical measurement is then used to determine an amount of the target constituent in the electroplating solution. An automatic dosing system that includes the foregoing method and/or one or more known electroanalytical techniques in a close-loop system is also set forth.
摘要翻译： 提出了一种使用电分析技术测量电镀溶液的目标成分的方法，其中电镀溶液包括一种或多种成分，其中副产物偏置对电分析技术的能量输入的初始电响应。 该方法包括第一步骤，其中通过向布置在电镀溶液中的一对电极提供能量输入来启动目标成分的电分析测量循环。 输入到该对电极的能量被提供至少一个对应于电分析测量周期达到稳态条件的时间段的预定时间段。 在随后的步骤中，在电分析测量循环达到稳态条件之后，进行电分析技术的能量输出的电分析测量。 然后使用电分析测量来确定电镀溶液中的目标成分的量。 还提出了一种包括前述方法和/或闭环系统中的一种或多种已知电分析技术的自动计量系统。
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9.发明授权公开(公告)号：US07244677B2
公开(公告)日：2007-07-17
申请号：US09018783
申请日：1998-02-04
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L21/2885 , C25D5/02 , C25D5/10 , C25D5/18 , C25D5/50 , C25D7/123 , H01L21/76877 , H01L21/76883
摘要： A method for filling recessed micro-structures at a surface of a semiconductor wafer with metallization is set forth. In accordance with the method, a metal layer is deposited into the micro-structures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed micro-structures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties.
摘要翻译： 阐述了一种用金属化在半导体晶片的表面填充凹入的微结构的方法。 根据该方法，金属层以诸如电镀工艺的工艺沉积到微结构中，该工艺产生足够小的金属颗粒，以便基本上填充凹陷的微结构。 沉积的金属随后在低于约100摄氏度的温度下进行退火处理，并且甚至可以在环境室温下进行，以允许提供最佳电性能的晶粒生长。
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10.发明授权Submicron metallization using electrochemical deposition 失效使用电化学沉积凹槽的亚微米金属化方法，其包括在第一电流密度下的第一沉积和以增加的电流密度的第二沉积公开(公告)号：US06806186B2
公开(公告)日：2004-10-19
申请号：US09815931
申请日：2001-03-23
IPC分类号： H01L214763
CPC分类号： H01L21/2885 , C25D5/02 , C25D5/10 , C25D5/18 , C25D5/50 , C25D7/123 , H01L21/76877 , H01L21/76883
摘要： Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.
摘要翻译： 公开了在微电子工件的表面中将金属沉积到微凹陷结构中的方法。 该方法适合与无添加剂结合使用，以及含有电镀溶液的添加剂。 根据一个实施例，该方法包括使微电子工件的表面与电镀电池中的电镀液接触，该电镀槽包括由微电子工件的表面形成的阴极和与电镀溶液电接触的阳极。 接下来，使用至少具有第一电流密度的第一电镀波形将金属的初始膜沉积到微凹陷结构中。 提供第一电镀波形的第一电流密度以增强金属在微凹陷结构底部的沉积。 在该初始电镀之后，使用具有第二电流密度的至少第二电镀波形继续沉积金属。 提供第二电镀波形的第二电流密度以帮助减少基本上完成微凹陷结构填充所需的时间。
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