利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

19 条记录 (耗时 0.031 秒)

    Shorted magnetoresistive head elements for electrical overstress and electrostatic discharge protection
    1.
    发明授权
    Shorted magnetoresistive head elements for electrical overstress and electrostatic discharge protection 失效
    用于电气过载和静电放电保护的短路磁阻头元件

    公开(公告)号：US5491605A

    公开(公告)日：1996-02-13

    申请号：US363460

    申请日：1994-12-23

    申请人： Timothy S. Hughbanks ,  Hin Pong E. Lee ,  Peter B. P. Phipps ,  Neil L. Robertson ,  Albert J. Wallash

    发明人： Timothy S. Hughbanks ,  Hin Pong E. Lee ,  Peter B. P. Phipps ,  Neil L. Robertson ,  Albert J. Wallash

    IPC分类号： G11B5/11 ,  G11B5/39 ,  G11B5/40 ,  G11B5/127 ,  G11B5/10

    CPC分类号： G11B5/3903 ,  G11B5/11 ,  G11B5/40 ,  G11B5/3967

    摘要： In a magnetic read/write transducer, the elements of the magnetoresistive (MR) and inductive heads are shorted together and to the slider substrate to provide a low resistance, conductive path bypassing the MR sensor element and minimizing electrical current through the MR sensor element during discharge of static electric charge. The MR sensor element, the MR conductive leads, the MR magnetic shield elements and inductive pole tips exposed at the slider air bearing surface are shorted together and to the slider substrate by a layer of conductive material, such as tungsten, formed over the slider air bearing surface. The conductive layer shorts the head elements together and to the slider substrate thus protecting the head against ESD/EOS damage during subsequent handling and assembly. The conductive layer is removed by wet etching prior to placing the magnetic head into operation in a magnetic storage system.

    摘要翻译： 在磁读/写换能器中，磁阻（MR）和感应头的元件在一起和滑块基板短路，以提供绕阻MR传感器元件的低电阻导电路径，并使通过MR传感器元件的电流最小化 放电静电。 在滑块空气轴承表面处暴露的MR传感器元件，MR导电引线，MR磁屏蔽元件和感应极端部通过形成在滑块空气上的一层导电材料（例如钨）短路在一起并且滑块基板 承载面。 导电层将头元件组合在一起并滑动到滑块基板，从而在随后的处理和组装过程中保护头部免受ESD / EOS损坏。 在磁头在磁存储系统中运行之前，通过湿蚀刻去除导电层。

    Shorted magnetoresistive head leads for electrical overstress and electrostatic discharge protection during manufacture of a magnetic storage system
    2.
    发明授权
    Shorted magnetoresistive head leads for electrical overstress and electrostatic discharge protection during manufacture of a magnetic storage system 失效
    在磁存储系统制造过程中用于电气过应力和静电放电保护的短路磁阻头

    公开(公告)号：US5465186A

    公开(公告)日：1995-11-07

    申请号：US187881

    申请日：1994-01-26

    申请人： Christopher H. Bajorek ,  A. David Erpelding ,  Glen A. Garfunkel ,  Surya Pattanaik ,  Neil L. Robertson ,  Albert J. Wallash

    发明人： Christopher H. Bajorek ,  A. David Erpelding ,  Glen A. Garfunkel ,  Surya Pattanaik ,  Neil L. Robertson ,  Albert J. Wallash

    IPC分类号： G01R33/09 ,  G11B5/11 ,  G11B5/39 ,  G11B5/40 ,  G11B5/48 ,  G11B5/33

    CPC分类号： G11B5/4853 ,  G01R33/09 ,  G11B5/3967 ,  G11B5/48 ,  G11B5/11 ,  G11B5/40 ,  Y10T29/49027 ,  Y10T29/49032

    摘要： The magnetoresistive (MR) sensor in a magnetic read/write transducer is protected against the effects of electrical overstress and electrostatic discharge during the manufacture and assembly of a magnetic storage system. The conductive leads of a magnetoresistive (MR) sensor element are shorted together to provide a low resistance, conductive path bypassing the MR element and minimizing electrical current through the MR sensing element during discharge of static electrical charge. The MR sensor lead terminal pads provided on the transducer/slider surface are shorted together by soldering. The other transducer elements such as the MR magnetic shields, the inductive coil and the inductive magnetic yoke structure can also be shorted to the MR sensor leads by soldering together the lead terminal pads at the slider surface. Alternatively, a twisted conductor pair may be used to short the MR terminals together. Remotely located protective devices, such as reversed diode pairs, can also be connected across the MR sensor element utilizing the twisted pair. The short is removed prior to placing the MR head into operation in the magnetic storage system.

    摘要翻译： 在磁存储系统的制造和组装期间，磁读/写换能器中的磁阻（MR）传感器被保护免受电应力和静电放电的影响。 磁阻（MR）传感器元件的导电引线短接在一起，以在静电荷放电期间提供绕MR元件的低电阻导电路径并使通过MR感测元件的电流最小化。 传感器/滑块表面上提供的MR传感器引线端子焊盘通过焊接短路在一起。 诸如MR磁屏蔽，感应线圈和感应磁轭结构的其它换能器元件也可以通过将引线端子焊盘焊接在滑块表面处而与MR传感器引线短路。 或者，可以使用双绞线对将MR端子一起缩短。 远程定位的保护装置，例如反向二极管对，也可以使用双绞线跨MR传感器元件连接。 在MR磁头在磁存储系统中运行之前，短路被去除。

    Silicon chip with an integrated magnetoresistive head mounted on a slider
    4.
    发明授权
    Silicon chip with an integrated magnetoresistive head mounted on a slider 失效
    具有安装在滑块上的集成磁阻头的硅芯片

    公开(公告)号：US5587857A

    公开(公告)日：1996-12-24

    申请号：US324841

    申请日：1994-10-18

    申请人： Steven H. Voldman ,  Albert J. Wallash ,  Reginald B. Wilcox, Jr.

    发明人： Steven H. Voldman ,  Albert J. Wallash ,  Reginald B. Wilcox, Jr.

    IPC分类号： G11B5/39 ,  G11B5/31 ,  G11B5/40 ,  G11B5/48 ,  G11B33/12 ,  G11B21/21

    CPC分类号： G11B5/40 ,  G11B5/3106 ,  G11B33/12 ,  G11B5/3967 ,  G11B5/4806 ,  Y10T29/49034 ,  Y10T29/49041

    摘要： An MR head has its MR stripe protected from electro-static discharge (ESD) on a slider, such as titanium carbide. The MR stripe is protected by a plurality of silicon integrated circuit devices which conduct ESD-induced current from the MR stripe to a silicon chip substrate ground potential or to larger components in the MR head such as the first and second shield layers and the coil layer. In a preferred embodiment the integrated circuit devices and interconnects are constructed in a single crystal silicon chip. The silicon chip is fixedly mounted to a trailing edge of the slider and the MR head is mounted on a trailing edge of the silicon chip adjacent the integrated circuit devices. The invention includes a method of mass producing sliders by combining thin film technology for making MR heads with integrated circuit technology for making integrated circuit devices. These technologies are combined at the wafer level to ultimate completion of individual sliders. At the wafer level a silicon wafer, which contains the integrated circuit devices, is fixedly mounted to a wafer of slider material, such as titanium carbide. A plurality of rows and columns of MR heads are constructed on the silicon wafer adjacent the integrated circuit devices. The composite wafer is then diced into quadrants wherein each quadrant contains rows and columns of sliders with MR heads. Each quadrant is then diced into rows. Each row is then diced into individual sliders, each slider carrying an MR head which is ESD protected.

    摘要翻译： MR磁头具有防止静电放电（ESD）的MR条纹，例如碳化钛。 MR条纹由多个硅集成电路器件保护，这些硅集成电路器件将从MR条纹到ESD芯片衬底接地电位的ESD感应电流或MR头中的较大部件（例如第一和第二屏蔽层）以及线圈层 。 在优选实施例中，集成电路器件和互连构造在单晶硅芯片中。 硅芯片固定地安装在滑块的后缘，并且MR磁头安装在硅芯片的与集成电路器件相邻的后缘。 本发明包括通过将用于制造MR磁头的薄膜技术与用于制造集成电路器件的集成电路技术结合在一起来批量生产滑块的方法。 这些技术在晶圆级别结合到最终完成各个滑块。 在晶片级，包含集成电路器件的硅晶片固定地安装在诸如碳化钛的滑块材料的晶片上。 在与集成电路器件相邻的硅晶片上构造多个行和列MR磁头。 然后将复合晶片切割成象限，其中每个象限包含具有MR磁头的行和列的滑块。 然后将每个象限切成行。 然后将每一行切成单独的滑块，每个滑块承载ESD保护的MR头。

    Method and system for actively controlling and reducing induced electrostatic voltage on a magnetic storage disk
    5.
    发明授权
    Method and system for actively controlling and reducing induced electrostatic voltage on a magnetic storage disk 有权
    积极控制和减少磁存储盘上感应静电电压的方法和系统

    公开(公告)号：US07187512B1

    公开(公告)日：2007-03-06

    申请号：US11004133

    申请日：2004-12-03

    申请人： Albert J. Wallash

    发明人： Albert J. Wallash

    IPC分类号： G11B5/02

    CPC分类号： G11B5/40

    摘要： Actively controlling ESI voltage on an object such as a magnetic storage disk (12), a rotating MR head, or insulator, includes the method and system for actively monitoring (92) a generated ESI voltage on the object (12). The method and system generate (100, 102, and 104) a signal responsive to the generated ESI voltage. Then, an opposing ESI voltage is produced (76) from the responsive signal. The method and system then apply the opposing ESI voltage (76) to the object (12) for opposing and controlling the generated ESI voltage.

    摘要翻译： 积极控制诸如磁存储盘（12），旋转MR磁头或绝缘体的物体上的ESI电压包括用于主动监测（92）对象（12）上产生的ESI电压的方法和系统。 所述方法和系统产生响应于产生的ESI电压的信号（100,102和104）。 然后，从响应信号产生相反的ESI电压（76）。 该方法和系统然后将相对的ESI电压（76）施加到物体（12），用于对抗和控制产生的ESI电压。

    Disk drive flex cable with ESD contact pad
    10.
    发明授权
    Disk drive flex cable with ESD contact pad 有权
    带ESD接触垫的磁盘驱动器柔性电缆

    公开(公告)号：US07505229B1

    公开(公告)日：2009-03-17

    申请号：US11031326

    申请日：2005-01-07

    申请人： Albert J. Wallash

    发明人： Albert J. Wallash

    IPC分类号： G11B5/48 ,  G11B21/16 ,  H01H3/00

    CPC分类号： G11B5/4846 ,  G11B5/40 ,  G11B5/455 ,  G11B33/1493

    摘要： A disk drive electrical interconnect includes one or more electrical contacts for providing a controlled discharge form a disk drive head in a manner that reduces the potential for damaging the head in preparation for testing or the like. In some embodiments the electrical interconnect includes a charge dissipation electrical contact that is interconnected with a read element of the head using an electrical trace. A resistor is disposed in series between the charge dissipation electrical contact and the read element. A probe may engage the charge dissipation electrical contact to remove the electrical charge from the read element at a desired rate because of the resistor. Once the electrical charge has been sufficiently dissipated, another probe may engage another contact of the electrical interconnect to provide a desired electrical signal to the head.

    摘要翻译： 磁盘驱动器电互连包括一个或多个电触头，用于以减少在准备测试等方面损坏磁头的可能性的方式提供盘驱动头的受控放电形式。 在一些实施例中，电互连包括电荷耗散电接触，其使用电迹线与头部的读取元件互连。 在电荷耗散电接触和读取元件之间串联设置电阻器。 由于电阻器，探针可以接合电荷耗散电接触以以期望的速率从读取元件去除电荷。 一旦电荷充分消散，另一个探针可以与电互连的另一个接触件接合，以向头部提供所需的电信号。