公开(公告)号：US5492720A

公开(公告)日：1996-02-20

申请号：US417874

申请日：1995-04-06

申请人： Hardayal S. Gill ,  Tsann Lin ,  Ching H. Tsang ,  Albert J. Wallash

发明人： Hardayal S. Gill ,  Tsann Lin ,  Ching H. Tsang ,  Albert J. Wallash

IPC分类号： G11B5/39 ,  B05D5/12

CPC分类号： G11B5/3932 ,  G11B5/399

摘要： In a magnetoresistive (MR) read sensor in which the MR layer is transversely biased by a soft magnetic layer separated from the MR layer by a nonmagnetic spacer layer an antiferromagnetic stabilization layer of NiO provides a stabilizing exchange-coupled magnetic field to the transverse bias layer insuring that the transverse bias layer is fully saturated in a preferred direction during sensor operation.

摘要翻译： 在磁阻（MR）读取传感器中，MR层被由非磁性间隔层与MR层分离的软磁层横向偏置，NiO的反铁磁稳定层为横向偏置层提供稳定的交换耦合磁场 确保在传感器操作期间横向偏置层在优选方向上完全饱和。

公开(公告)号：US5508866A

公开(公告)日：1996-04-16

申请号：US290320

申请日：1994-08-15

申请人： Hardayal S. Gill ,  Tsann Lin ,  Ching H. Tsang ,  Albert J. Wallash

发明人： Hardayal S. Gill ,  Tsann Lin ,  Ching H. Tsang ,  Albert J. Wallash

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： G11B5/3932 ,  G11B5/399

摘要： In a magnetoresistive (MR) read sensor in which the MR layer is transversely biased by a soft magnetic layer separated from the MR layer by a nonmagnetic spacer layer an antiferromagnetic stabilization layer of NiO provides a stabilizing exchange-coupled magnetic field to the transverse bias layer insuring that the transverse bias layer is fully saturated in a preferred direction during sensor operation.

摘要翻译： 在磁阻（MR）读取传感器中，MR层被由非磁性间隔层与MR层分离的软磁层横向偏置，NiO的反铁磁稳定层为横向偏置层提供稳定的交换耦合磁场 确保在传感器操作期间横向偏置层在优选方向上完全饱和。

公开(公告)号：US5621592A

公开(公告)日：1997-04-15

申请号：US473703

申请日：1995-06-07

申请人： Hardayal S. Gill ,  Tsann Lin

发明人： Hardayal S. Gill ,  Tsann Lin

IPC分类号： G11B5/00 ,  G11B5/10 ,  G11B5/11 ,  G11B5/31 ,  G11B5/39 ,  G11B5/465 ,  G11B5/127 ,  G11B5/147

CPC分类号： G11B5/3912 ,  G11B5/10 ,  G11B5/3967 ,  G11B5/465 ,  G11B2005/0013 ,  G11B2005/0016 ,  G11B5/11 ,  G11B5/3113

摘要： First and second shield layers of a read head are constructed of a lamination of NiMn and Fe-based layers to improve the performance of the shield layers when they are subjected to high external fields, such as from the pole tips of a write head combined therewith. Without lamination with one or more NiMn layers, many shield materials do not return to the same domain configuration after excitation from an external field. The result is that the Fe-based material assumes a different domain configuration after each excitation which changes the bias point of the MR sensor of the read head. By laminating with NiMn, the uniaxial anisotropy of the material can be increased to provide uniform domain configuration and exchange pinning between shield material NiMn returns the material to the same configuration after each external field excitation. The invention further provides fine tunings of the magnetic properties of the shield layer by various combinations of the Fe-based layers and/or the NiMn layer with NiFe layers.

摘要翻译： 读头的第一和第二屏蔽层由NiMn和Fe基层的叠层构成，以便在屏蔽层经受高的外部场时，例如从与其结合的写入头的磁极尖端提高屏蔽层的性能 。 没有与一个或多个NiMn层层压，许多屏蔽材料在从外部场激励后不会返回到相同的畴结构。 结果是，在每次激发之后，Fe基材料呈现出不同的畴结构，这改变了读取头的MR传感器的偏置点。 通过与NiMn层压，可以增加材料的单轴各向异性，以提供均匀的畴结构，并在屏蔽材料之间交换钉扎NiMn在每次外部场激发后将材料返回到相同的构造。 本发明还通过Fe基层和/或NiMn层与NiFe层的各种组合进一步提供了屏蔽层的磁性能的微调。

公开(公告)号：US5515221A

公开(公告)日：1996-05-07

申请号：US366940

申请日：1994-12-30

申请人： Hardayal S. Gill ,  Tsann Lin

发明人： Hardayal S. Gill ,  Tsann Lin

IPC分类号： G11B5/00 ,  G11B5/10 ,  G11B5/11 ,  G11B5/31 ,  G11B5/39 ,  G11B5/465 ,  G11B5/127

CPC分类号： G11B5/3912 ,  G11B5/10 ,  G11B5/3967 ,  G11B5/465 ,  G11B2005/0013 ,  G11B2005/0016 ,  G11B5/11 ,  G11B5/3113

摘要： First and second shield layers of a read head are constructed of a lamination of NiMn and Fe-based layers to improve the performance of the shield layers when they are subjected to high external fields, such as from the pole tips of a write head combined therewith. Without lamination with one or more NiMn layers, many shield materials do not return to the same domain configuration after excitation from an external field. The result is that the Fe-based material assumes a different domain configuration after each excitation which changes the bias point of the MR sensor of the read head. By laminating with NiMn, the uniaxial anisotropy of the material can be increased to provide uniform domain configuration and exchange pinning between shield material NiMn returns the material to the same configuration after each external field excitation. The invention further provides fine tunings of the magnetic properties of the shield layer by various combinations of the Fe-based layers and/or the NiMn layer with NiFe layers.

摘要翻译： 读头的第一和第二屏蔽层由NiMn和Fe基层的叠层构成，以便在屏蔽层经受高的外部场时，例如从与其结合的写入头的磁极尖端提高屏蔽层的性能 。 没有与一个或多个NiMn层层压，许多屏蔽材料在从外部场激励后不会返回到相同的畴结构。 结果是，在每次激发之后，Fe基材料呈现出不同的畴结构，这改变了读取头的MR传感器的偏置点。 通过与NiMn层压，可以增加材料的单轴各向异性，以提供均匀的畴结构，并在屏蔽材料之间交换钉扎NiMn在每次外部场激发后将材料返回到相同的构造。 本发明还通过Fe基层和/或NiMn层与NiFe层的各种组合进一步提供了屏蔽层的磁性能的微调。

公开(公告)号：US20120075751A1

公开(公告)日：2012-03-29

申请号：US13314449

申请日：2011-12-08

申请人： Hardayal S. Gill ,  Werner J. Douglas ,  Wipul P. Jayasekara ,  Wen-Chien Hsiao

发明人： Hardayal S. Gill ,  Werner J. Douglas ,  Wipul P. Jayasekara ,  Wen-Chien Hsiao

IPC分类号： G11B5/11

CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3912 ,  G11B5/3929 ,  G11B5/398

摘要： A current to perpendicular to plane (CPP) magnetoresistance (MR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. A CPP MR read head includes a first shield, an MR sensor formed on the first shield, and a second shield contacting the MR sensor proximal to an ABS. The CPP MR read head further includes insulating material between the MR sensor and the second shield, where the insulating material is distal to the ABS to electrically isolate the MR sensor from the second shield distal to the ABS. Sense current injected from the second shield through the MR sensor and into the first shield is confined proximal to the ABS at a location where the second shield contacts the MR sensor.

摘要翻译： 公开了使用靠近空气轴承表面（ABS）的电流限制来垂直于平面（CPP）磁阻（MR）读取头的电流。 CPP MR读取头包括形成在第一屏蔽上的第一屏蔽，MR传感器和接近ABS的MR传感器的第二屏蔽。 CPP MR读取头还包括在MR传感器和第二屏蔽之间的绝缘材料，其中绝缘材料位于ABS的远侧，以将MR传感器与远离ABS的第二屏蔽电隔离。 从第二屏蔽件通过MR传感器注入并进入第一屏蔽层的感应电流在第二屏蔽件接触MR传感器的位置处被限制在ABS附近。

公开(公告)号：US08136226B2

公开(公告)日：2012-03-20

申请号：US12122417

申请日：2008-05-16

申请人： Hardayal S. Gill ,  Wipul P. Jayasekara

发明人： Hardayal S. Gill ,  Wipul P. Jayasekara

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B5/3912 ,  G11B5/398 ,  G11B2005/3996 ,  Y10T29/49043 ,  Y10T428/1121

摘要： Methods and apparatus provide a refill configuration adjacent a back-edge that defines a height of a magnetoresistive read sensor. Milling through layers of the sensor forms the back-edge and may be initially conducted at a first angle of incidence greater than a second angle of incidence. In combination, an insulating material and a polish resistant material, such as a non-magnetic metal, disposed on the insulating material fills a void created by the milling. The sensor further includes first and second magnetic shields with the layers of the sensor along with the polish resistant material and insulating material disposed between the first and second magnetic shields.

摘要翻译： 方法和装置提供了邻近限定磁阻读取传感器的高度的后缘的再填充配置。 通过传感器层的铣削形成后边缘并且可以最初以大于第二入射角的第一入射角进行。 结合在一起，设置在绝缘材料上的绝缘材料和耐抛光材料（例如非磁性金属）填充由铣削产生的空隙。 传感器还包括第一和第二磁屏蔽，其中传感器的层与防抛光材料以及设置在第一和第二磁屏蔽之间的绝缘材料一起。

公开(公告)号：US07974047B2

公开(公告)日：2011-07-05

申请号：US12202675

申请日：2008-09-02

申请人： Hardayal S. Gill ,  Douglas J. Werner ,  Wen-Chien Hsiao ,  Wipul P. Jayasekara

发明人： Hardayal S. Gill ,  Douglas J. Werner ,  Wen-Chien Hsiao ,  Wipul P. Jayasekara

IPC分类号： G11B5/31

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996

摘要： A current to perpendicular to plane (CPP) differential magnetoresistance (DMR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. The CPP DMR read head includes a first electrically conductive lead, a first MR sensor formed on the first lead, and a non-magnetic electrically conductive spacer formed on the first MR sensor proximate to the ABS. The CPP DMR read head further includes insulating material on the first MR sensor distal to the ABS. A second MR sensor is formed in contact with the conductive spacer such that the second MR sensor is in electrical contact with the first MR sensor proximate to the ABS and is electrically isolated from the first MR sensor distal to the ABS. A second electrically conductive lead is in contact with the second MR sensor. Sense current injected into the first and the second MR sensor is confined proximate to the ABS.

摘要翻译： 公开了使用靠近空气轴承表面（ABS）的电流限制垂直于平面（CPP）差分磁阻（DMR）读头的电流。 CPP DMR读取头包括第一导电引线，形成在第一引线上的第一MR传感器和形成在靠近ABS的第一MR传感器上的非磁性导电间隔物。 CPP DMR读取头还包括远离ABS的第一MR传感器上的绝缘材料。 第二MR传感器形成为与导电间隔物接触，使得第二MR传感器与靠近ABS的第一MR传感器电接触，并且与远离ABS的第一MR传感器电隔离。 第二导电引线与第二MR传感器接触。 注入第一和第二MR传感器的感应电流被限制在接近ABS的位置。

公开(公告)号：US20070297090A1

公开(公告)日：2007-12-27

申请号：US11425665

申请日：2006-06-21

申请人： Hardayal S. Gill

发明人： Hardayal S. Gill

IPC分类号： G11B21/02 ,  G11B5/012

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B5/3906 ,  Y10T29/49037

摘要： A magnetic read head and a method for manufacturing a magnetic read head are provided. In one embodiment, the method includes providing the magnetic read head comprising a pinning layer disposed over a substrate of the magnetic read head, a pinned layer, a reference layer, a tunneling barrier layer, and a free layer, wherein the free layer is in contact with the tunneling barrier layer. The method further includes milling partially through the free layer from a back surface, thereby creating an exposed face of the free layer which is coplanar with the substrate and oxidizing a portion of the free layer between the exposed face and the tunneling barrier layer. The method further includes milling through the free layer, tunneling barrier layer, reference layer, pinned layer, and pinning layer along lateral sides of the magnetic read head.

摘要翻译： 提供磁读头和制造磁读头的方法。 在一个实施例中，该方法包括提供磁读头，其包括设置在磁读头的衬底上的钉扎层，钉扎层，参考层，隧道势垒层和自由层，其中自由层处于 与隧道势垒层接触。 该方法还包括从后表面部分地穿过自由层，从而产生与衬底共面的自由层的暴露面，并且在暴露面和隧道势垒层之间氧化自由层的一部分。 该方法还包括沿着磁读头的侧面穿过自由层，隧道势垒层，参考层，钉扎层和钉扎层。

公开(公告)号：US5467881A

公开(公告)日：1995-11-21

申请号：US267269

申请日：1994-06-28

申请人： Hardayal S. Gill

发明人： Hardayal S. Gill

IPC分类号： G11B5/31 ,  G11B5/39 ,  B44C1/22

CPC分类号： G11B5/3903 ,  G11B5/3163

摘要： A method is provided for eliminating lead to shield electrical shorts at the ABS of an MR read head. The electrical shorts are eliminated by removing streaks of conductive material which extend between the conductive leads and the conductive shields across first and second insulative gap layers. A photoresist layer is formed over the edge surface of the MR stripe at the ABS along with coextensive widths of edge surfaces of other thin film surfaces at the ABS. The uncovered edge surfaces of the remaining thin film layers at the ABS are then subjected to reactive ion etching to remove about 500.ANG. of the uncovered edge surfaces. With a photoresist layer approximately 10 .mu.m thick, the edge surface of the MR stripe is fully protected during this process. After the etching step, the photoresist layer is removed and the MR read head is free of electrical shorts between the leads and the shields. This method is especially adaptable for batch production of MR read heads where the MR stripes are arranged in rows and columns on a wafer. Strips of photoresist are formed over the columns of MR stripes for their protection while the unwanted streaks of conductive material between the leads and the shields are removed by the aforementioned etching process.

摘要翻译： 提供了一种用于消除在MR读取头的ABS处屏蔽电气短路的引线的方法。 通过去除在导电引线和导电屏蔽之间延伸穿过第一和第二绝缘间隙层的导电材料的条纹来消除电短路。 在ABS处的MR条纹的边缘表面上形成光致抗蚀剂层以及ABS处的其它薄膜表面的边缘表面的共同宽度。 然后将ABS处的剩余薄膜层的未覆盖的边缘表面进行反应离子蚀刻以除去未覆盖的边缘表面的约500。 对于大约10微米厚的光致抗蚀剂层，在该过程中MR条纹的边缘表面被完全保护。 在蚀刻步骤之后，去除光致抗蚀剂层，并且MR读取头在引线和屏蔽之间没有电短路。 该方法特别适用于MR读取头的批量生产，其中MR条以行和列排列在晶片上。 光致抗蚀剂条形成在MR条的列上用于保护，同时通过上述蚀刻工艺除去引线和屏蔽之间的不需要的导电材料条纹。

公开(公告)号：US20120106006A1

公开(公告)日：2012-05-03

申请号：US12914926

申请日：2010-10-28

申请人： Satoru Araki ,  Hardayal S. Gill ,  Hiroaki Chihaya ,  Dustin W. Erickson ,  Haiwen Xi ,  Chang Man Park

发明人： Satoru Araki ,  Hardayal S. Gill ,  Hiroaki Chihaya ,  Dustin W. Erickson ,  Haiwen Xi ,  Chang Man Park

IPC分类号： G11B5/48 ,  G11B5/187

CPC分类号： G11B5/607 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3906 ,  G11B5/3967

摘要： A magnetic read sensor having improved robustness to withstand thermal variations resulting from thermal fly height heating. Improved thermal robustness comes as a result of improved pinned layer pinning. The read head includes an AFM layer having an increased thickness to provide a higher blocking temperature. The read head further includes a pinned layer structure that includes a first magnetic layer adjacent to and exchange coupled with the AFM layer. The first layer comprises a Co—Fe layer with an increased Fe content of 20-30 atomic percent. The pinned layer structure also includes a second magnetic layer that is antiparallel coupled with the AP1 layer. The AP2 layer can be a multi-layer structure that includes a layer of CoFe, a layer of Co—Fe—Hf formed on the layer of Co—Fe, a layer of Co—Fe—B formed on the layer of Co—Fe—Hf, and a second layer of Co—Fe formed on the layer of Co—Fe—B.

摘要翻译： 磁读取传感器具有改进的鲁棒性，以承受由热飞高高度加热引起的热变化。 由于改进了固定层钉扎，提高了热稳定性。 读头包括具有增加的厚度以提供更高的阻挡温度的AFM层。 读取头还包括钉扎层结构，其包括与AFM层相邻并与AFM层交换耦合的第一磁性层。 第一层包括Fe含量高于20-30原子％的Co-Fe层。 钉扎层结构还包括与AP1层反平行耦合的第二磁性层。 AP2层可以是多层结构，其包括CoFe层，Co-Fe层上形成的Co-Fe-Hf层，Co-Fe层上形成的Co-Fe-B层 和在Co-Fe-B层上形成的第二层Co-Fe层。