公开(公告)号：US5492720A

公开(公告)日：1996-02-20

申请号：US417874

申请日：1995-04-06

申请人： Hardayal S. Gill ,  Tsann Lin ,  Ching H. Tsang ,  Albert J. Wallash

发明人： Hardayal S. Gill ,  Tsann Lin ,  Ching H. Tsang ,  Albert J. Wallash

IPC分类号： G11B5/39 ,  B05D5/12

CPC分类号： G11B5/3932 ,  G11B5/399

摘要： In a magnetoresistive (MR) read sensor in which the MR layer is transversely biased by a soft magnetic layer separated from the MR layer by a nonmagnetic spacer layer an antiferromagnetic stabilization layer of NiO provides a stabilizing exchange-coupled magnetic field to the transverse bias layer insuring that the transverse bias layer is fully saturated in a preferred direction during sensor operation.

摘要翻译： 在磁阻（MR）读取传感器中，MR层被由非磁性间隔层与MR层分离的软磁层横向偏置，NiO的反铁磁稳定层为横向偏置层提供稳定的交换耦合磁场 确保在传感器操作期间横向偏置层在优选方向上完全饱和。

公开(公告)号：US5508866A

公开(公告)日：1996-04-16

申请号：US290320

申请日：1994-08-15

申请人： Hardayal S. Gill ,  Tsann Lin ,  Ching H. Tsang ,  Albert J. Wallash

发明人： Hardayal S. Gill ,  Tsann Lin ,  Ching H. Tsang ,  Albert J. Wallash

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： G11B5/3932 ,  G11B5/399

摘要： In a magnetoresistive (MR) read sensor in which the MR layer is transversely biased by a soft magnetic layer separated from the MR layer by a nonmagnetic spacer layer an antiferromagnetic stabilization layer of NiO provides a stabilizing exchange-coupled magnetic field to the transverse bias layer insuring that the transverse bias layer is fully saturated in a preferred direction during sensor operation.

摘要翻译： 在磁阻（MR）读取传感器中，MR层被由非磁性间隔层与MR层分离的软磁层横向偏置，NiO的反铁磁稳定层为横向偏置层提供稳定的交换耦合磁场 确保在传感器操作期间横向偏置层在优选方向上完全饱和。

公开(公告)号：US5621592A

公开(公告)日：1997-04-15

申请号：US473703

申请日：1995-06-07

申请人： Hardayal S. Gill ,  Tsann Lin

发明人： Hardayal S. Gill ,  Tsann Lin

IPC分类号： G11B5/00 ,  G11B5/10 ,  G11B5/11 ,  G11B5/31 ,  G11B5/39 ,  G11B5/465 ,  G11B5/127 ,  G11B5/147

CPC分类号： G11B5/3912 ,  G11B5/10 ,  G11B5/3967 ,  G11B5/465 ,  G11B2005/0013 ,  G11B2005/0016 ,  G11B5/11 ,  G11B5/3113

摘要： First and second shield layers of a read head are constructed of a lamination of NiMn and Fe-based layers to improve the performance of the shield layers when they are subjected to high external fields, such as from the pole tips of a write head combined therewith. Without lamination with one or more NiMn layers, many shield materials do not return to the same domain configuration after excitation from an external field. The result is that the Fe-based material assumes a different domain configuration after each excitation which changes the bias point of the MR sensor of the read head. By laminating with NiMn, the uniaxial anisotropy of the material can be increased to provide uniform domain configuration and exchange pinning between shield material NiMn returns the material to the same configuration after each external field excitation. The invention further provides fine tunings of the magnetic properties of the shield layer by various combinations of the Fe-based layers and/or the NiMn layer with NiFe layers.

摘要翻译： 读头的第一和第二屏蔽层由NiMn和Fe基层的叠层构成，以便在屏蔽层经受高的外部场时，例如从与其结合的写入头的磁极尖端提高屏蔽层的性能 。 没有与一个或多个NiMn层层压，许多屏蔽材料在从外部场激励后不会返回到相同的畴结构。 结果是，在每次激发之后，Fe基材料呈现出不同的畴结构，这改变了读取头的MR传感器的偏置点。 通过与NiMn层压，可以增加材料的单轴各向异性，以提供均匀的畴结构，并在屏蔽材料之间交换钉扎NiMn在每次外部场激发后将材料返回到相同的构造。 本发明还通过Fe基层和/或NiMn层与NiFe层的各种组合进一步提供了屏蔽层的磁性能的微调。

公开(公告)号：US5515221A

公开(公告)日：1996-05-07

申请号：US366940

申请日：1994-12-30

申请人： Hardayal S. Gill ,  Tsann Lin

发明人： Hardayal S. Gill ,  Tsann Lin

IPC分类号： G11B5/00 ,  G11B5/10 ,  G11B5/11 ,  G11B5/31 ,  G11B5/39 ,  G11B5/465 ,  G11B5/127

CPC分类号： G11B5/3912 ,  G11B5/10 ,  G11B5/3967 ,  G11B5/465 ,  G11B2005/0013 ,  G11B2005/0016 ,  G11B5/11 ,  G11B5/3113

摘要： First and second shield layers of a read head are constructed of a lamination of NiMn and Fe-based layers to improve the performance of the shield layers when they are subjected to high external fields, such as from the pole tips of a write head combined therewith. Without lamination with one or more NiMn layers, many shield materials do not return to the same domain configuration after excitation from an external field. The result is that the Fe-based material assumes a different domain configuration after each excitation which changes the bias point of the MR sensor of the read head. By laminating with NiMn, the uniaxial anisotropy of the material can be increased to provide uniform domain configuration and exchange pinning between shield material NiMn returns the material to the same configuration after each external field excitation. The invention further provides fine tunings of the magnetic properties of the shield layer by various combinations of the Fe-based layers and/or the NiMn layer with NiFe layers.

摘要翻译： 读头的第一和第二屏蔽层由NiMn和Fe基层的叠层构成，以便在屏蔽层经受高的外部场时，例如从与其结合的写入头的磁极尖端提高屏蔽层的性能 。 没有与一个或多个NiMn层层压，许多屏蔽材料在从外部场激励后不会返回到相同的畴结构。 结果是，在每次激发之后，Fe基材料呈现出不同的畴结构，这改变了读取头的MR传感器的偏置点。 通过与NiMn层压，可以增加材料的单轴各向异性，以提供均匀的畴结构，并在屏蔽材料之间交换钉扎NiMn在每次外部场激发后将材料返回到相同的构造。 本发明还通过Fe基层和/或NiMn层与NiFe层的各种组合进一步提供了屏蔽层的磁性能的微调。

公开(公告)号：US5528440A

公开(公告)日：1996-06-18

申请号：US280967

申请日：1994-07-26

申请人： Robert E. Fontana ,  Tsann Lin ,  Ching H. Tsang

发明人： Robert E. Fontana ,  Tsann Lin ,  Ching H. Tsang

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/15 ,  H01L43/10 ,  G01R33/02 ,  H01L43/08

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11C11/15 ,  H01L43/10

摘要： An improved spin valve (SV) magnetoresistive element has its free ferromagnetic layer in the form of a central active region with defined edges and end regions that are contiguous with and abut the edges of the central active region. A layer of antiferromagnetic material, preferably a nickel-manganese (Ni--Mn) alloy, is formed on and in contact with the ferromagnetic material in the end regions for exchange coupling with the end regions to provide them with a longitudinal bias of their magnetizations. The pinned ferromagnetic layer in the SV element is pinned by exchange coupling with a different layer of antiferromagnetic material, preferably an iron-manganese (Fe--Mn) alloy. This material has a substantially different Neel temperature from that of the antiferromagnetic material on the end regions. The process for making the SV element includes heating to different predetermined temperatures in the presence of an applied magnetic field to orient the magnetizations of the free and pinned layers in the proper direction. The SV element may be used as a sensor for reading data in magnetic recording systems.

摘要翻译： 改进的自旋阀（SV）磁阻元件具有其中心有源区形式的自由铁磁层，其具有与中心有源区的边缘邻接并邻接中心有源区的边缘和端部区域。 一层反铁磁材料，优选镍锰（Ni-Mn）合金，形成在端部区域中的铁磁材料上并与其接触，用于与端部区域交换耦合，以使它们具有它们的磁化的纵向偏压。 通过与不同的反铁磁材料层（优选铁锰（Fe-Mn））合金的交换耦合来固定SV元件中的被钉扎的铁磁层。 该材料具有与末端区域上的反铁磁材料的Neel温度基本上不同的Neel温度。 制造SV元件的过程包括在存在施加的磁场的情况下加热到不同的预定温度，以将自由和被钉扎层的磁化定向在适当的方向。 SV元件可以用作用于在磁记录系统中读取数据的传感器。

公开(公告)号：US20130164562A1

公开(公告)日：2013-06-27

申请号：US13335642

申请日：2011-12-22

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/39 ,  H01F7/06

CPC分类号： G11B5/3906 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3909 ,  G11B5/398 ,  G11B5/40 ,  H01F10/3254 ,  H01F10/3295 ,  Y10T29/4902 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143

摘要： The invention provides a tunneling magnetoresistance (TMR) read sensor with a long diffusion path and ex-situ interfaces in a sense layer structure. The sense layer structure comprises a first sense layer preferably formed of a ferromagnetic Co—Fe film, a second sense layer preferably formed of a ferromagnetic Co—Fe—B film, and a third sense layer preferably formed of a ferromagnetic Ni—Fe film. The sense layer structure has a long diffusion path (defined as a total thickness of the first and second sense layers) and ex-situ interfaces for suppressing unwanted diffusions of Ni atoms. Alternatively, the sense layer structure comprises a first sense layer preferably formed of a ferromagnetic Co—Fe film, a second sense layer preferably formed of a ferromagnetic Co—Fe—B film, a third sense layer preferably formed of a ferromagnetic Co—Fe—B—Hf film, and a fourth sense layer preferably formed of a ferromagnetic Ni—Fe film.

摘要翻译： 本发明提供了一种在感应层结构中具有长扩散路径和非原位界面的隧道磁阻（TMR）读取传感器。 感测层结构包括优选由铁磁Co-Fe膜形成的第一感测层，优选由铁磁性Co-Fe-B膜形成的第二感测层和优选由铁磁性Ni-Fe膜形成的第三感测层。 感应层结构具有长的扩散路径（定义为第一和第二感测层的总厚度）和用于抑制Ni原子的不期望的扩散的非原位界面。 或者，感测层结构包括优选由铁磁性Co-Fe膜形成的第一感测层，优选由铁磁性Co-Fe-B膜形成的第二感测层，优选由铁磁性Co-Fe-B膜形成的第三感测层， B-Hf膜，以及优选由铁磁性Ni-Fe膜形成的第四感测层。

公开(公告)号：US08325450B2

公开(公告)日：2012-12-04

申请号：US12332010

申请日：2008-12-10

申请人： Ying Hong ,  Kochan Ju ,  Tsann Lin ,  Ching Hwa Tsang

发明人： Ying Hong ,  Kochan Ju ,  Tsann Lin ,  Ching Hwa Tsang

IPC分类号： G01B5/66

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  Y10T428/1114

摘要： A magnetic structure in one embodiment includes a tunnel barrier layer; a free layer; and a buffer layer between the tunnel barrier layer and the free layer, wherein a cross sectional area of the tunnel barrier layer in a direction parallel to a plane of deposition thereof is greater than a cross sectional area of the free layer in a direction parallel to a plane of deposition thereof, wherein a cross sectional area of the buffer layer in a direction parallel to a plane of deposition thereof is greater than a cross sectional area of the free layer in the direction parallel to the plane of deposition thereof. Additional systems and methods are also presented.

摘要翻译： 一个实施例中的磁性结构包括隧道势垒层; 自由层 以及所述隧道势垒层和所述自由层之间的缓冲层，其中所述隧道势垒层在与其沉积平面平行的方向上的横截面面积大于所述自由层在平行于所述隧道势垒层的方向上的横截面积 其沉积平面，其中在平行于其沉积平面的方向上的缓冲层的横截面面积大于在平行于其沉积平面的方向上的自由层的横截面面积。 还介绍了其他系统和方法。

公开(公告)号：US07796364B2

公开(公告)日：2010-09-14

申请号：US11618527

申请日：2006-12-29

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/39

CPC分类号： G11B5/3912 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/30 ,  H01F10/3272 ,  H01F41/302

摘要： A current-perpendicular-to-plane (CPP) magnetoresistance sensor and a method for forming a current-perpendicular-to-plane (CPP) magnetoresistance sensor. The method includes providing a ferromagnetic shield layer and disposing one or more seed layers on the ferromagnetic shield layer. The method also includes disposing a pinning layer on the one or more seed layers, wherein the pinning layer excludes PtMn, and disposing a pinned layer on the pinning layer. The shield layer, each of the one or more seed layers, the pinning layer, and the pinned layer are comprised of compounds having face-centered-cubic structures.

摘要翻译： 电流垂直平面（CPP）磁阻传感器和形成电流 - 垂直平面（CPP）磁阻传感器的方法。 该方法包括提供铁磁屏蔽层并在铁磁屏蔽层上设置一个或多个晶种层。 所述方法还包括在所述一个或多个晶种层上设置钉扎层，其中所述钉扎层排除PtMn，并且将钉扎层设置在钉扎层上。 屏蔽层，一个或多个种子层中的每一个，钉扎层和被钉扎层由具有面心立方结构的化合物组成。

公开(公告)号：US07697244B2

公开(公告)日：2010-04-13

申请号：US11423697

申请日：2006-06-12

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/127

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/3912 ,  G11B5/3932 ,  G11B5/3967 ,  G11B2005/3996

摘要： A magnetic head in one embodiment includes first and second ferromagnetic shield layers, first and second nonmagnetic read-gap layers positioned between the first and second ferromagnetic shield layers, a sensor used in a current-in-plane (CIP) mode, first and second longitudinal bias layers electrically coupled with the sensor, and first and second conducting layers electrically coupled with the first and second longitudinal bias layers, respectively.

摘要翻译： 一个实施例中的磁头包括第一和第二铁磁屏蔽层，位于第一和第二铁磁屏蔽层之间的第一和第二非磁性读取间隙层，在平面（CIP）模式中使用的传感器，第一和第二 与传感器电耦合的纵向偏置层，以及分别与第一和第二纵向偏置层电耦合的第一和第二导电层。

公开(公告)号：US07599153B2

公开(公告)日：2009-10-06

申请号：US11362628

申请日：2006-02-27

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/33

CPC分类号： G11B5/3116 ,  G11B5/11 ,  G11B5/3912 ,  G11B5/3932 ,  G11B5/3967 ,  G11B5/398

摘要： A method and apparatus providing a stabilized top shield in a read head used for the longitudinal or perpendicular magnetic recording is disclosed. The top shield includes a laminate structure including at least three layers of ferromagnetic and antiferromagnetic films in a frame. Unidirectional anisotropy induced at the interface of the ferromagnetic and antiferromagnetic films is optimized by selecting suitable compositions and thicknesses to achieve the stabilization of the top shield while maintaining high permeability. In an alternative method, the top shield includes a ferromagnetic Ni—Fe film in a central region and multiple layers comprising ferromagnetic Co—Fe and Ni—Fe layers and an antiferromagnetic layer. Unidirectional anisotropy induced at the interfaces of ferromagnetic and antiferromagnetic layers by selecting suitable compositions and thicknesses of the ferromagnetic and antiferromagnetic layers to achieve the stabilization of the top shield through magnetostatic interactions between the central and side regions.

摘要翻译： 公开了一种在用于纵向或垂直磁记录的读取头中提供稳定的顶部屏蔽的方法和装置。 顶部屏蔽包括在框架中包括至少三层铁磁性和反铁磁性膜的层压结构。 通过选择合适的组成和厚度来优化在铁磁和反铁磁膜的界面处引起的单向各向异性，以实现顶部屏蔽的稳定性，同时保持高磁导率。 在替代方法中，顶部屏蔽包括在中心区域的铁磁性Ni-Fe膜，以及包含铁磁Co-Fe和Ni-Fe层的多层和反铁磁性层。 通过选择铁磁和反铁磁层的合适组成和厚度来实现铁磁性和反铁磁性层的界面处的单向各向异性，以通过中央和侧面区域之间的静磁相互作用实现顶部屏蔽的稳定。