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1.发明授权公开(公告)号：US06288880B1
公开(公告)日：2001-09-11
申请号：US09433900
申请日：1999-11-04
IPC分类号： G11B5127
CPC分类号： G11B5/3903 , G11B5/11 , G11B5/3103 , G11B5/3912 , G11B5/40 , G11B5/59683 , Y10T29/49032
摘要： A magneto-resistive read head having a “parasitic shield” provides an alternative path for currents associated with sparkovers, thus preventing such currents from damaging the read head. The parasitic shield is provided in close proximity to a conventional magnetic shield. The electrical potential of parasitic shield is held essentially equal to the electrical potential of the sensor element. If charges accumulate on the conventional shield, current will flow to the parasitic shield at a lower potential than would be required for current to flow between the conventional shield and the sensor element. Alternatively, conductive spark gap devices are electrically coupled to sensor element leads and to each magnetic shield. Each spark gap device is brought within very close proximity of the substrate to provide an alternative path for charge that builds up between the sensor element and the substrate to be discharged. The ends of the spark gaps that are brought into close proximity of the substrate are preferably configured with high electric field density inducing structures which reduce the voltage required to cause a sparkover between the spark gap device and the substrate.
摘要翻译： 具有“寄生屏蔽”的磁阻式读取头提供了与火花放电相关的电流的替代路径，从而防止这种电流损坏读取头。 寄生屏蔽件靠近传统的磁屏蔽设置。 寄生屏蔽的电位基本上等于传感器元件的电位。 如果电容积累在常规屏蔽上，则电流将以比传统屏蔽和传感器元件之间的电流流动所需的电位更低的电流流向寄生屏蔽。 或者，导电火花隙装置电耦合到传感器元件引线和每个磁屏蔽。 每个火花隙装置被带到非常靠近基板的位置，以提供在传感器元件和待排出的基板之间建立的用于充电的替代路径。 靠近基板的火花隙的端部优选地配置有高电场密度诱导结构，其降低在火花隙装置和基板之间引起火花放电所需的电压。
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公开(公告)号：US5761009A
公开(公告)日：1998-06-02
申请号：US480069
申请日：1995-06-07
CPC分类号： G11B5/3903 , G11B5/11 , G11B5/3912 , G11B5/40 , G11B5/59683 , G11B5/3103 , Y10T29/49032
摘要： A magneto-resistive read head having a "parasitic shield" provides an alternative path for currents associated with sparkovers, thus preventing such currents from damaging the read head. The parasitic shield is provided in close proximity to a conventional magnetic shield. The electrical potential of parasitic shield is held essentially equal to the electrical potential of the sensor element. If charges accumulate on the conventional shield, current will flow to the parasitic shield at a lower potential than would be required for current to flow between the conventional shield and the sensor element. Alternatively, conductive spark gap devices are electrically coupled to sensor element leads and to each magnetic shield. Each spark gap device is brought within very close proximity of the substrate to provide an alternative path for charge that builds up between the sensor element and the substrate to be discharged. The ends of the spark gaps that are brought into close proximity of the substrate are preferably configured with high electric field density inducing structures which reduce the voltage required to cause a sparkover between the spark gap device and the substrate.
摘要翻译： 具有“寄生屏蔽”的磁阻式读取头提供了与火花放电相关的电流的替代路径，从而防止这种电流损坏读取头。 寄生屏蔽件靠近传统的磁屏蔽设置。 寄生屏蔽的电位基本上等于传感器元件的电位。 如果电容积累在常规屏蔽上，则电流将以比传统屏蔽和传感器元件之间的电流流动所需的电位更低的电流流向寄生屏蔽。 或者，导电火花隙装置电耦合到传感器元件引线和每个磁屏蔽。 每个火花隙装置被带到非常靠近基板的位置，以提供在传感器元件和待排出的基板之间建立的用于充电的替代路径。 靠近基板的火花隙的端部优选地配置有高电场密度诱导结构，其降低在火花隙装置和基板之间引起火花放电所需的电压。
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公开(公告)号：US6081409A
公开(公告)日：2000-06-27
申请号：US959406
申请日：1997-10-28
CPC分类号： G11B5/3903 , G11B5/11 , G11B5/3912 , G11B5/40 , G11B5/59683 , G11B5/3103 , Y10T29/49032
摘要： A magneto-resistive read head having a "parasitic shield" provides an alternative path for currents associated with sparkovers, thus preventing such currents from damaging the read head. The parasitic shield is provided in close proximity to a conventional magnetic shield. The electrical potential of parasitic shield is held essentially equal to the electrical potential of the sensor element. If charges accumulate on the conventional shield, current will flow to the parasitic shield at a lower potential than would be required for current to flow between the conventional shield and the sensor element. Alternatively, conductive spark gap devices are electrically coupled to sensor element leads and to each magnetic shield. Each spark gap device is brought within very close proximity of the substrate to provide an alternative path for charge that builds up between the sensor element and the substrate to be discharged. The ends of the spark gaps that are brought into close proximity of the substrate are preferably configured with high electric field density inducing structures which reduce the voltage required to cause a sparkover between the spark gap device and the substrate.
摘要翻译： 具有“寄生屏蔽”的磁阻式读取头提供了与火花放电相关的电流的替代路径，从而防止这种电流损坏读取头。 寄生屏蔽件靠近传统的磁屏蔽设置。 寄生屏蔽的电位基本上等于传感器元件的电位。 如果电容积累在常规屏蔽上，则电流将以比传统屏蔽和传感器元件之间的电流流动所需的电位更低的电流流向寄生屏蔽。 或者，导电火花隙装置电耦合到传感器元件引线和每个磁屏蔽。 每个火花隙装置被带到非常靠近基板的位置，以提供在传感器元件和待排出的基板之间建立的用于充电的替代路径。 靠近基板的火花隙的端部优选地配置有高电场密度诱导结构，其降低在火花隙装置和基板之间引起火花放电所需的电压。
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4.发明授权Data storage system with TiC MR-head magnetic shield dummy shield spark gap 失效数据存储系统采用TiC MR磁头磁屏蔽虚拟屏蔽火花隙公开(公告)号：US06359750B1
公开(公告)日：2002-03-19
申请号：US09434450
申请日：1999-11-05
IPC分类号： G11B5127
CPC分类号： G11B5/3903 , G11B5/11 , G11B5/3103 , G11B5/3912 , G11B5/40 , G11B5/59683 , Y10T29/49032
摘要： A magneto-resistive read head having a “parasitic shield” in a data storage system provides an alternative path for currents associated with sparkovers, thus preventing such currents from damaging the read head. The parasitic shield is provided in close proximity to a conventional magnetic shield. The electrical potential of parasitic shield is held essentially equal to the electrical potential of the sensor element. If charges accumulate on the conventional shield, current will flow to the parasitic shield at a lower potential than would be required for current to flow between the conventional shield and the sensor element. Alternatively, conductive spark gap devices are electrically coupled to sensor element leads and to each magnetic shield. Each spark gap device is brought within very close proximity of the substrate to provide an alternative path for charge that builds up between the sensor element and the substrate to be discharged. The ends of the spark gaps that are brought into close proximity of the substrate are preferably configured with high electric field density inducing structures which reduce the voltage required to cause a sparkover between the spark gap device and the substrate.
摘要翻译： 在数据存储系统中具有“寄生屏蔽”的磁阻式读取头为与电荷放电相关联的电流提供替代路径，从而防止这种电流损坏读取头。 寄生屏蔽件靠近传统的磁屏蔽设置。 寄生屏蔽的电位基本上等于传感器元件的电位。 如果电容积累在常规屏蔽上，则电流将以比传统屏蔽和传感器元件之间的电流流动所需的电位更低的电流流向寄生屏蔽。 或者，导电火花隙装置电耦合到传感器元件引线和每个磁屏蔽。 每个火花隙装置被带到非常靠近基板的位置，以提供在传感器元件和待排出的基板之间建立的用于充电的替代路径。 靠近基板的火花隙的端部优选地配置有高电场密度诱导结构，其降低在火花隙装置和基板之间引起火花放电所需的电压。
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公开(公告)号：US5644454A
公开(公告)日：1997-07-01
申请号：US613928
申请日：1996-03-11
CPC分类号： G11B5/4853 , G11B5/40 , G11B5/4886 , G11B19/02 , G11B5/6011
摘要： An MR head receives ESD protection from a mechanism that automatically and releasably shorts the MR head whenever a suspension assembly on which the head is mounted is not installed in an HDA. The suspension assembly includes a flexure underlying a load beam, which is connected to an actuator arm. The MR head is mounted to a distal end of the flexure, leads from components of the MR head being brought out in the form of MR wire leads running along the load beam and the support arm to a nearby terminal connecting side tab. The conductors are separated and exposed at a designated point along the flexure to provide a contact region. A shorting bar, which comprises an electrically conductive member attached to the actuator arm, automatically connects the MR wire leads at the contact region when absence of support for the MR head permits the load beam to bend sufficiently toward the shorting bar. Thus, when the assembly is removed from installation in an HDA, the flexure is permitted to move toward the shorting bar, bringing the contact region and the shorting bar in electrical contact to short the MR wired leads and thereby disable the MR sensor. When the assembly is installed in an HDA, the MR head is supported by an air bearing or the disk itself, depending upon whether the disk is rotating or stopped, respectively. In either case, the load beam is not permitted to droop and the shorting bar cannot contact the conductors, thus activating the MR sensor. Temporary ESD protection mechanisms are also provided, these being removable prior to operation of the HDA by breaking and removing various temporary shorting mechanisms.
摘要翻译： 每当安装有头部的悬挂组件未安装在HDA中时，MR磁头可以从机构自动和可释放地短路MR头部获得ESD保护。 悬架组件包括连接到致动器臂的负载梁下方的挠曲件。 MR头被安装到挠曲件的远端，从MR头的部件引出的MR导线沿着负载梁和支撑臂延伸到附近的端子连接侧突出部的形式被引出。 导体沿着挠曲件在指定点处分离并暴露以提供接触区域。 包括连接到致动器臂的导电构件的短路棒在没有用于MR头的支撑的情况下在接触区域处自动连接MR线引线，允许负载梁朝向短路棒充分弯曲。 因此，当组件从HDA中的安装中移除时，允许挠曲件朝向短路棒移动，使接触区域和短路棒电接触以缩短MR有线引线，从而禁用MR传感器。 当组件安装在HDA中时，MR磁头由空气轴承或磁盘本身支撑，这取决于磁盘是分别旋转还是停止。 在任一情况下，负载梁不允许下垂，并且短路棒不能接触导体，从而启动MR传感器。 还提供了临时ESD保护机制，它们在HDA操作之前可以通过断开和移除各种临时短路机构来拆卸。
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公开(公告)号：US5710682A
公开(公告)日：1998-01-20
申请号：US799259
申请日：1997-02-13
CPC分类号： G11B5/4853 , G11B5/40 , G11B5/4886 , G11B19/02 , G11B5/6011
摘要： An MR head receives ESD protection from a mechanism that automatically and releasably shorts the MR head whenever a suspension assembly on which the head is mounted is not installed in an HDA. The suspension assembly includes a flexure underlying a load beam, which is connected to an actuator arm. The MR head is mounted to a distal end of the flexure, leads from components of the MR head being brought out in the form of MR wire leads running along the load beam and the support arm to a nearby terminal connecting side tab. The conductors are separated and exposed at a designated point along the flexure to provide a contact region. A shorting bar, which comprises an electrically conductive member attached to the actuator arm, automatically connects the MR wire leads at the contact region when absence of support for the MR head permits the load beam to bend sufficiently toward the shorting bar. Thus, when the assembly is removed from installation in an HDA, the flexure is permitted to move toward the shorting bar, bringing the contact region and the shorting bar in electrical contact to short the MR wired leads and thereby disable the MR sensor. When the assembly is installed in an HDA, the MR head is supported by an air bearing or the disk itself, depending upon whether the disk is rotating or stopped, respectively. In either case, the load beam is not permitted to droop and the shorting bar cannot contact the conductors, thus activating the MR sensor. Temporary ESD protection mechanisms are also provided, these being removable prior to operation of the HDA by breaking and removing various temporary shorting mechanisms.
摘要翻译： 每当安装有头部的悬挂组件未安装在HDA中时，MR磁头可以从机构自动和可释放地短路MR头部获得ESD保护。 悬架组件包括连接到致动器臂的负载梁下方的挠曲件。 MR头被安装到挠曲件的远端，从MR头的部件引出的MR导线沿着负载梁和支撑臂延伸到附近的端子连接侧突出部的形式被引出。 导体沿着挠曲件在指定点处分离并暴露以提供接触区域。 包括连接到致动器臂的导电构件的短路棒在没有用于MR头的支撑的情况下在接触区域处自动连接MR线引线，允许负载梁朝向短路棒充分弯曲。 因此，当组件从HDA中的安装中移除时，允许挠曲件朝向短路棒移动，使接触区域和短路棒电接触以缩短MR有线引线，从而禁用MR传感器。 当组件安装在HDA中时，MR磁头由空气轴承或磁盘本身支撑，这取决于磁盘是分别旋转还是停止。 在任一情况下，负载梁不允许下垂，并且短路棒不能接触导体，从而启动MR传感器。 还提供了临时ESD保护机制，它们在HDA操作之前可以通过断开和移除各种临时短路机构来拆卸。
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公开(公告)号：US5712747A
公开(公告)日：1998-01-27
申请号：US590652
申请日：1996-01-24
CPC分类号： G11B5/6005 , G11B33/12 , G11B5/012 , G11B5/3103 , G11B5/3106 , G11B5/39 , G11B5/3903 , G11B5/3967 , G11B5/40 , G11B5/4826 , G11B20/10 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048
摘要： A thin film slider with an on-board multi-layer integrated circuit includes a substrate with an air bearing surface and a substantially parallel upper surface spanned by a deposit end. A magnetic head being formed at the deposit end, positioned to magnetically exchange data with a magnetic recording medium that passes beneath the air bearing surface. The upper surface bears an integrated multi-layer accessory circuit, which may be prepared using the CUBE process. Hence, components and vias of the different circuit layers are attached by interconnections that span the edges of the circuit layers. The accessory circuit preferably includes one or more memory devices, such as a cache memory, a DRAM circuit, an EPROM circuit, or another memory circuit appropriate to the application. In embodiments where the magnetic head is a magnetoresistive ("MR") head, the accessory circuit may also include a pre-amplifier and a sensing circuit to support operation of the MR head. The accessory circuit may also include electrostatic discharge ("ESD") protection circuitry to increase the accessory circuit's resistance to damage caused by ESD.
摘要翻译： 具有板上多层集成电路的薄膜滑块包括具有空气轴承表面和由沉积端跨越的基本上平行的上表面的基板。 磁头形成在沉积端，定位成与通过空气轴承表面下方的磁记录介质磁性交换数据。 上表面具有集成的多层辅助电路，其可以使用CUBE工艺制备。 因此，不同电路层的部件和通孔通过跨越电路层边缘的互连来附接。 附件电路优选地包括一个或多个存储器件，诸如高速缓冲存储器，DRAM电路，EPROM电路或适用于该应用的另一存储器电路。 在磁头是磁阻（“MR”）磁头的实施例中，附件电路还可以包括前置放大器和感测电路，以支持MR磁头的操作。 附件电路还可以包括静电放电（“ESD”）保护电路，以增加辅助电路对ESD引起的损坏的抵抗力。
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8.发明授权Method for manufacturing thin film slider with on-board multi-layer integrated circuit 失效具有板载多层集成电路的薄膜滑块制造方法
公开(公告)号：US5771571A
公开(公告)日：1998-06-30
申请号：US785102
申请日：1997-01-21
IPC分类号： G11B5/012 , G11B5/31 , G11B5/39 , G11B5/40 , G11B5/48 , G11B5/60 , G11B20/10 , G11B33/12 , G11B5/127
CPC分类号： G11B5/6005 , G11B33/12 , G11B5/012 , G11B5/3103 , G11B5/3106 , G11B5/39 , G11B5/3903 , G11B5/3967 , G11B5/40 , G11B5/4826 , G11B20/10 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048
摘要： A thin film slider with an on-board multi-layer integrated circuit includes a substrate with an air bearing surface and a substantially parallel upper surface spanned by a deposit end. A magnetic head being formed at the deposit end, positioned to magnetically exchange data with a magnetic recording medium that passes beneath the air bearing surface. The upper surface bears an integrated multi-layer accessory circuit, which may be prepared using the CUBE process. Hence, components and vias of the different circuit layers are attached by interconnections that span the edges of the circuit layers. The accessory circuit preferably includes one or more memory devices, such as a cache memory, a DRAM circuit, an EPROM circuit, or another memory circuit appropriate to the application. In embodiments where the magnetic head is a magnetoresistive ("MR") head, the accessory circuit may also include a pre-amplifier and a sensing circuit to support operation of the MR head. The accessory circuit may also include electrostatic discharge ("ESD") protection circuitry to increase the accessory circuit's resistance to damage caused by ESD.
摘要翻译： 具有板上多层集成电路的薄膜滑块包括具有空气轴承表面和由沉积端跨越的基本上平行的上表面的基板。 磁头形成在沉积端，定位成与通过空气轴承表面下方的磁记录介质磁性交换数据。 上表面具有集成的多层辅助电路，其可以使用CUBE工艺制备。 因此，不同电路层的部件和通孔通过跨越电路层边缘的互连来附接。 附件电路优选地包括一个或多个存储器件，诸如高速缓冲存储器，DRAM电路，EPROM电路或适用于该应用的另一存储器电路。 在磁头是磁阻（“MR”）磁头的实施例中，附件电路还可以包括前置放大器和感测电路，以支持MR磁头的操作。 附件电路还可以包括静电放电（“ESD”）保护电路，以增加辅助电路对ESD引起的损坏的抵抗力。
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公开(公告)号：US20120044732A1
公开(公告)日：2012-02-23
申请号：US13050536
申请日：2011-03-17
申请人： Yu Li , Steven Howard Voldman
发明人： Yu Li , Steven Howard Voldman
CPC分类号： H01L23/60 , H01L21/76283 , H01L21/823481 , H01L24/04 , H01L27/0277 , H01L27/0623 , H01L27/0635 , H01L2924/01037 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： An isolated epitaxial modulation device comprises a substrate; a barrier structure formed on the substrate; an isolated epitaxial region formed above the substrate and electrically isolated from the substrate by the barrier structure; a semiconductor device, the semiconductor device located in the isolated epitaxial region; and a modulation network formed on the substrate and electrically coupled to the semiconductor device. The device also comprises a bond pad and a ground pad. The isolated epitaxial region is electrically coupled to at least one of the bond pad and the ground pad. The semiconductor device and the epitaxial modulation network are configured to modulate an input voltage.
摘要翻译： 隔离的外延调制装置包括基板; 形成在所述基板上的阻挡结构; 隔离的外延区，形成在衬底上并通过阻挡结构与衬底电隔离; 半导体器件，位于隔离的外延区域中的半导体器件; 以及形成在所述基板上并且电耦合到所述半导体器件的调制网络。 该装置还包括接合焊盘和接地焊盘。 隔离的外延区电耦合到接合焊盘和接地焊盘中的至少一个。 半导体器件和外延调制网络被配置为调制输入电压。
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10.发明授权Guard ring structures for high voltage CMOS/low voltage CMOS technology using LDMOS (lateral double-diffused metal oxide semiconductor) device fabrication 失效使用LDMOS（横向双扩散金属氧化物半导体）器件制造的高压CMOS /低电压CMOS技术的保护环结构公开(公告)号：US07541247B2
公开(公告)日：2009-06-02
申请号：US11778414
申请日：2007-07-16
IPC分类号： H01L21/336 , H01L21/761
CPC分类号： H01L29/7835 , H01L29/0619 , H01L29/0692 , H01L29/1083 , H01L29/1087 , H01L29/66659
摘要： A semiconductor structure and a method for forming the same. The method includes providing a semiconductor structure. The semiconductor structure includes a semiconductor substrate. The method further includes simultaneously forming a first doped transistor region of a first transistor and a first doped guard-ring region of a guard ring on the semiconductor substrate. The first doped transistor region and the first doped guard-ring region comprise dopants of a first doping polarity. The method further includes simultaneously forming a second doped transistor region of the first transistor and a second doped guard-ring region of the guard ring on the semiconductor substrate. The second doped transistor region and the second doped guard-ring region comprise dopants of the first doping polarity. The second doped guard-ring region is in direct physical contact with the first doped guard-ring region. The guard ring forms a closed loop around the first and second doped transistor regions.
摘要翻译： 一种半导体结构及其形成方法。 该方法包括提供半导体结构。 半导体结构包括半导体衬底。 该方法还包括在半导体衬底上同时形成第一晶体管的第一掺杂晶体管区域和保护环的第一掺杂保护环区域。 第一掺杂晶体管区域和第一掺杂保护环区域包括第一掺杂极性的掺杂剂。 该方法还包括在半导体衬底上同时形成第一晶体管的第二掺杂晶体管区域和保护环的第二掺杂保护环区域。 第二掺杂晶体管区域和第二掺杂保护环区域包括第一掺杂极性的掺杂剂。 第二掺杂保护环区域与第一掺杂保护环区域直接物理接触。 保护环围绕第一和第二掺杂晶体管区域形成闭环。
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