公开(公告)号：US20090035925A1

公开(公告)日：2009-02-05

申请号：US12249099

申请日：2008-10-10

申请人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard A. Stall

发明人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard A. Stall

IPC分类号： H01L21/425

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/475

摘要： A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

摘要翻译： 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层，其厚度介于1微米与6微米之间，设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度，以实现具有大于500伏特的击穿电压，超过1安培的电流容量和小于3伏特的正向电压的器件。

公开(公告)号：US07863172B2

公开(公告)日：2011-01-04

申请号：US12249099

申请日：2008-10-10

申请人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard A. Stall

发明人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard A. Stall

IPC分类号： H01L29/872 ,  H01L29/47

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/475

摘要： A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

摘要翻译： 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层，其厚度介于1微米与6微米之间，设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度，以实现具有大于500伏特的击穿电压，超过1安培的电流容量和小于3伏特的正向电压的器件。

公开(公告)号：US07436039B2

公开(公告)日：2008-10-14

申请号：US11030554

申请日：2005-01-06

申请人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard A. Stall

发明人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard A. Stall

IPC分类号： H01L23/58

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/475

摘要： A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

摘要翻译： 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层，其厚度介于1微米与6微米之间，设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度，以实现具有大于500伏特的击穿电压，超过1安培的电流容量和小于3伏特的正向电压的器件。

公开(公告)号：US20110101371A1

公开(公告)日：2011-05-05

申请号：US12930179

申请日：2010-12-30

申请人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Rick Stall

发明人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Rick Stall

IPC分类号： H01L29/20

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/475

摘要： A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

摘要翻译： 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层，其厚度介于1微米与6微米之间，设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度，以实现具有大于500伏特的击穿电压，超过1安培的电流容量和小于3伏特的正向电压的器件。

公开(公告)号：US20100140627A1

公开(公告)日：2010-06-10

申请号：US12575717

申请日：2009-10-08

申请人： Bryan S. Shelton ,  Marek K. Pabisz ,  TingGang Zhu ,  Linlin Liu ,  Boris Peres

发明人： Bryan S. Shelton ,  Marek K. Pabisz ,  TingGang Zhu ,  Linlin Liu ,  Boris Peres

IPC分类号： H01L23/495 ,  H01L29/20

CPC分类号： H01L23/49562 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/562 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/20755 ,  H01L2924/2076 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/00 ,  H01L2924/00012

摘要： A packaged semiconductor device including a semiconductor die mounted on a header of a leadframe. A plurality of spaced external conductors extends from the header and at least one of the external conductors has a bond wire post at one end thereof such that a bonding wire extends between the bond wire post and the semiconductor die. The package device also includes a housing, which encloses the semiconductor die, the header, the bonding wire and the bonding wire post resulting in an insulated packaged device.

摘要翻译： 一种封装的半导体器件，包括安装在引线框的头部上的半导体管芯。 多个间隔开的外部导体从集管延伸，并且至少一个外部导体在其一端具有接合线柱，使得接合线在接合线柱和半导体管芯之间延伸。 包装装置还包括壳体，其包围半导体管芯，集管，接合线和接合线柱，形成绝缘的封装装置。